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ST BTA/BTB12 T12 Series handbook

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1. IT RMS A 14 13 BTB T12 12 io BTA 9 8 7 6 5 4 3 T Te C 0 0 25 50 75 100 125 Fig 3 Relative variation of thermal impedance versus pulse duration K Zth Rth 1E 0 Zth j c 1E 1 Zth j a tp s 1E 2 Lidi 1E 3 1E 2 1E 1 1E 0 1E 1 1E 2 5E 2 BTA BTB12 and T12 Series Fig 4 On state characteristics maximum values ITM A 100 m Tj max 10 of z Tj 25 C Tj max Vto 0 85 V Rd 35 mQ VTM V 1 05 1 0 15 20 25 30 35 40 45 5 0 Fig 6 Non repetitive surge peak on state current for a sinusoidal pulse with width tp lt 10ms and corresponding value of It ITSM A It A2s di dt limitation i intiale25eC 1000 soa s e cal ITSM 100 tp ms 10 0 01 0 10 1 00 10 00 Fig 8 1 Relative variation of critical rate of decrease of main current versus dV dt c typical values BW CW T 1235 di dt c dV dt c Specified dl dt c
2. DIMENSIONS c REF Millimeters Inches p Min Typ Max Min Typ Max A 15 20 15 90 0 598 0 625 al 3 75 0 147 a2 13 00 14 00 0 511 0 551 B 10 00 10 40 0 393 0 409 b1 0 61 0 88 0 024 0 034 i b2 1 23 1 32 0 048 0 051 C 4 40 4 60 0 173 0 181 c2 c1 0 49 0 70 0 019 0 027 c2 2 40 2 72 0 094 0 107 e 2 40 2 70 0 094 0 106 F 6 20 6 60 0 244 0 259 3 75 3 85 0 147 0 151 14 15 80 16 40 16 80 0 622 0 646 0 661 Mm L 2 65 2 95 0 104 0 116 z 7 12 1 14 1 70 0 044 0 066 13 1 14 1 70 0 044 0 066 M 2 60 0 102 Information furnished is believed to be accurate and reliable However STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics Specifications mentioned in this publication are subject to change without notice This publication supersedes and replaces all information previously supplied STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics The ST logo is a registered trademark of STMicroelectronics 2002 STMicroelectronics Printed in Italy All Rights
3. 1 2 SP BW CW T1235 TFF me Ea lla dV dt c V s 0 1 1 0 10 0 100 0 Fig 5 Surge peak on state current versus number of cycles ITSM A 130 T i E a a t 20ms 90 Non repetitive One cycle Tj initial 25 C 80 10 Number of cycles 1 10 100 1000 Fig 7 Relative variation of gate trigger current holding current and latching current versus junction temperature typical values IGT IH IL T IGT IH IL Tj 25 C Tj C 40 20 0 20 40 60 80 100 120 140 Fig 8 2 Relative variation of critical rate of decrease of main current versus dV dt c typical values TW di dt c dV dt c Specified dl dt c 5 0 4 5 4 0 3 5 3 0 25 2 0 1 5 1 0 05 dV dt c V us 0 g 0 1 1 0 10 0 100 0 5 7 BTA BTB12 and T12 Series Fig 9 Relative variation of critical rate of decrease of main current versus junction temperature
4. di dt c Tj dl dt c Tj specified A Oo DD Tj C 0 25 50 75 100 125 PACKAGE MECHANICAL DATA D PAK Plastic Fig 10 D PAK Thermal resistance junction to ambient versus copper surface under tab printed circuit board FR4 copper thickness 35 um Rth j a C W 10 S cm DIMENSIONS eee REF Millimeters Inches Co l ie Min Typ Max Min Typ Max S A 430 4 60 0 169 0 181 1 At 2 49 2 69 0 098 0 106 a A2 0 03 0 23 0 001 0 009 B 0 70 0 93 0 027 0 037 B2 1 25 1 40 0 048 0 055 ee C 045 0 60 0 017 0 024 C2 1 21 1 36 0 047 0 054 Cyl LR D 8 95 9 35 0 352 0 368 E 10 00 10 28 0 393 0 405 G 488 5 28 0 192 0 208 note L 15 00 15 85 0 590 0 624 2 0 MIN L2 4 27 1 40 0 050 0 055 FLAT ZONE _ L3 1 40 1 75 10 055 0 069 oe R 0 40 0 016 gt le v2 0 8 0 8 FOOTPRINT DIMENSIONS in millimeters D PAK Plastic 16 90 C H 10 30 5 08 oa 3 70 8 90 6 7 lt BTA BTB12 and T12 Series PACKAGE MECHANICAL DATA TO 220AB TO 220AB Ins
5. Non repetitive surge peak off state A VDRM VYRRM V V 2 DSM VRSM voltage tp 10 ms Tj 25 C wer V IGM Peak gate current tp 20 us Tj 125 C 4 A PG Av Average gate power dissipation Tj 125 C 1 Ww Tstg Storage junction temperature range 40 to 150 C Tj Operating junction temperature range 40 to 125 September 2002 Ed 6A 1 7 BTA BTB12 and T12 Series ELECTRICAL CHARACTERISTICS Tj 25 C unless otherwise specified SNUBBERLESS and LOGIC LEVEL 3 Quadrants Symbol Test Conditions Quadrant BTA BTB12 Unit lat 1 1 11 MAX 35 5 10 35 50 mA Vp 12V RL 309 VGT 1 11 11 MAX 1 3 V VGD Vp Vppm Rp 3 3 kQ 1 11 MIN 0 2 v Tj 125 C l 2 lr 100 mA MAX 35 10 15 35 50 mA IL Ig 1 2 let 1 ll MAX 50 10 25 50 70 mA II 60 15 30 60 80 dV dt 2 Vp 67 Vprm gate open Tj 125 C MIN 500 20 40 500 1000 V us dl dt c 2 dV dt c 0 1 V us Tj 125 C MIN 3 5 6 5 A ms dV dt c 10 V us Tj 125 C 1 2 9 Without snubber Tj 125 C 6 5 6 5 12 STANDARD 4 Quadrants Symbol Test Conditions Quadrant BTA BTB12 Unit lat 1 1 1 1 MAX 25 50 mA Vp 12V R 30Q IV 50 100 Vat ALL MAX 1 3 V VGD Vp Vprm RL 3 3kQ Tj 125 C ALL MIN 0 2 y IH 2 lr 500 mA MAX 25 50 mA IL Ig 1 2 let H IV MAX 40 50 mA II 80 100 dV
6. OO BIA OO ky BTA BTB12 and T12 Series 12A TRIACS SNUBBERLESS LOGIC LEVEL amp STANDARD MAIN FEATURES DESCRIPTION Available either in through hole or surface mount packages the BTA BTB12 and T12 triac series is suitable for general purpose AC switching They can be used as an ON OFF function in applications such as static relays heating regulation induction motor starting circuits or for phase control operation in light dimmers motor speed controllers The snubberless versions BTA BTB W and T12 series are specially recommended for use on inductive loads thanks to their high commutation performances Logic level versions are designed to interface directly with low power drivers such as microcontrollers By using an internal ceramic pad the BTA series provides voltage insulated tab rated at 2500V RMS complying with UL standards File ref E81734 ELA mA j os D PAK T12 G TO 220AB Insulated BTA12 TO 220AB BTB12 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit RMS RMS on state current full sine wave D PAK TO 220AB Tc 105 C 12 A TO 220AB Ins Tc 90 C ITSM Non repetitive surge peak on state F 50 Hz t 20 ms 120 A full cycle Tj initial 25 current full cycle Tj initia 5 C F 60Hz t167 ms 126 It It Value for fusing tp 10 ms 78 A s Critical rate of rise of on state current 7
7. Reserved STMicroelectronics GROUP OF COMPANIES Australia Brazil Canada China Finland France Germany Hong Kong India Isreal Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom United States http www st com 4 7 7
8. V 800 800V CURRENT 12A 600 BW RG pg p PACKING MODE Blank Bulk SENSITIVITY amp TYPE RG Tube B 50mA STANDARD BW 50mA SNUBBERLESS C 25mA STANDARD CW 35mA SNUBBERLESS SW 10mA LOGIC LEVEL TW 5mA LOGIC LEVEL T 12 35 TRIAC SERIES CURRENT 12A SENSITIVITY 35 35mA TR PACKAGE G D PAK VOLTAGE PACKING MODE 600 600V Blank Tube 800 800V TR Tape amp Reel 3 7 BTA BTB12 and T12 Series OTHER INFORMATION Part Number Marking Weight anit eae BTA BTB12 xxxyz BTA BTB12 xxxyz 2 3g 250 Bulk BTA BTB12 xxxyzRG BTA BTB12 xxxyz 2 3g 50 Tube T1235 xxxG T1235xxxG 1 59 50 Tube T1235 xxxG TR T1235xxxG 1 59 1000 Tape amp reel Note xxx voltage yy sensitivity z type Fig 1 Maximum power dissipation versus RMS on state current full cycle P W 6 4 2 0 8 IT RMS A on A OD 0 12 3 4 5 6 7 8 9 10 11 12 Fig 2 2 RMS on state current versus ambient temperature printed circuit board FR4 copper thickness 35um full cycle IT RMS A 0 25 50 75 100 125 4 7 Fig 2 1 RMS on state current versus case temperature full cycle
9. dt 2 Vp 67 Vpprm gate open Tj 125 C MIN 200 400 V us dV dt c 2 dl dt c 5 3 A ms Tj 125 C MIN 5 10 V us STATIC CHARACTERISTICS Symbol Test Conditions Value Unit V 2 ltm 17 A tp 380 us Tj 25 C MAX 1 55 V Vio 2 Threshold voltage Tj 125 C MAX 0 85 V Ra 2 Dynamic resistance Tj 125 C MAX 35 mQ V V Tj 25 C 5 pA DRM DRM V RRM MAX RRM Tj 125 C 1 mA Note 1 minimum IGT is guaranted at 5 of IGT max Note 2 for both polarities of A2 referenced to A1 lt 2 7 BTA BTB12 and T12 Series THERMAL RESISTANCES Symbol Parameter Value Unit Rth j c Junction to case AC D PAK TO 220AB 1 4 C W TO 220AB Insulated 2 3 Rih j a Junction to ambient S 1 cm D PAK 45 C W TO 220AB 60 TO 220AB Insulated S Copper surface under tab PRODUCT SELECTOR Voltage xxx Part Number Sensitivity Type Package 600 V 800 V BTA BTB12 xxxB X X 50 mA Standard TO 220AB BTA BTB12 xxxBW 50 mA Snubberless TO 220AB BTA BTB12 xxxC X X 25 mA Standard TO 220AB BTA BTB12 xxxCW X X 35 mA Snubberless TO 220AB BTA BTB12 xxxSW X X 10 mA Logic level TO 220AB BTA BTB12 xxxTW X X 5 mA Logic Level TO 220AB T1235 xxxG X X 35 mA Snubberless D PAK BTB non insulated TO 220AB package ORDERING INFORMATION BT A 12 TRIAC SERIES INSULATION A insulated VOLTAGE B non insulated 600 600

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