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ST BTA06 T/D/S/A BTB06 T/D/S/A handbook

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1. Fig 9 On state characteristics maximum values Lrq A 100 SS 10 ria Tj max Ti max 3 ff Vio 113V 4 ff Rt 0 0650 J f VMV 1 1 2 3 4 5 4 5 sg 68 OMsoN Fig 6 Relative variation of gate trigger current and holding current versus junction temperature lgtlTjl miT o IgtTi 25 C Ih Tj 26 C 25 olN lgt 15 LM 3 1 Ih ee a MIT 0 5 Tj C S 40 30 20 10 0 10 20 30 40 50 60 70 BO 90 100110 Fig 8 Non repetitive surge peak on state current for a sinusoidal pulse with width t lt 10ms and corresponding value of I2t Itsm A lt A Tj initial 26 C o I TM 100 rt Y t ms 10 nan 1 2 5 10 BTAO6 T D S A BTBO06 T D S A PACKAGE MECHANICAL DATA TO220AB Plastic REF DIMENSIONS Min 10 20 14 23 12 70 5 85 2 54 448 3 55 1 15 0 35 2 10 4 58 0 80 0 64 v oz z r c rz o m o o o Cooling method C Marking type number Weight 2 3g Recommended torque value 0 8 m N Maximum torque value 1 m N Information furnished is believed to be accurate and reliable However SGS THOMSON Microelectronics assumes no responsability for the consequences of use
2. 80 180 Rthe 0 C W 25 C W 10 C W 90 6 6 95 4 4 S 100 2 2 e 105 Tamb C V riga A aoa 0 1 1 o o 1 2 3 4 5 6 7 Fig 3 Correlation between maximum RMS power dissipation and maximum allowable temperatures Tamp and Tcase for different thermal resistances heatsink contact BTB P W Tease C Rthz 0 C W 2 2 9 C W log 8 STAT AE i 40 C w A 95 x 4 100 2 T 105 Tamb C o L L 11 0 20 40 66 580 100 120 140 110 80 100 120 140 Fig 4 RMS on state current versus case temperature Votis A BTA Q0 180 A o OQ Oo o Tease C o 0 10 20 30 40 50 80 70 80 90 100110120 3 5 BTAO6 T D S A BTBO6 T D S A Fig 5 Relative vatiation of thermal impedance versus pulse duration Zth Rth 1S r T t i ii 01 Zth j a tp s 0 01 ian 1E 3 1E2 1E4 1E40 1E 1 1E42 5E 2 Fig 7 Non Repetitive surge peak on state current versus number of cycles Iesu m Number of cycles 0 LL LLLI 1 1 10 100 1000
3. j c DC Junction to case for DC 4 4 C W 3 2 Rth j c AC Junction to case for 360 conduction angle 3 3 C W 2 4 GATE CHARACTERISTICS maximum values PG Av 1W Pam 10W tp 20 us lGM 4A tp 20 us Vam 16V tp 20 us ELECTRICAL CHARACTERISTICS Suffix Unit Test Conditions Quadrant Vp 12V DC R 339 Q Tj 25 C HI II IV Vp VpRM RL 3 83ko Tj 110 C Illi Tj 25 C VGT Vp VpRM Ig 40mA Tje29C LIV dig dt 0 5A us IG 1 2 IGT Tj 25 C I HI IV Ir 100mA gate open Tj 25 C ITM 8 5A tp 380s Tj 25 C VpRM Rated Tj 25 C VRRM Rated Tj 110 C Linear slope Tj 110 C Vp 67 VDRM gate open dV dic di dt c 2 7A ms Tj 110 C For either polarity of electrode A voltage with reference to electrode A1 2 5 BTAO6 T D S A BTBO06 T D S A ORDERING INFORMATION Package IT RMS VpRM VRRM Sensitivity Specification BTA Insulated BTB Uninsulated Fig 1 Maximum RMS power dissipation versus RMS on state current F 50Hz Curves are cut off by dl dt c limitation Fig 2 Correlation between maximum RMS power dissipation and maximum allowable temperatures Tamb and Tcase for different thermal resistances heatsink contact BTA P w P w Tease C 10 10
4. of such information nor for any infringement of patents or other rights of third parties which may result from its use No license is granted by implication or otherwise under any patent or patent rights of SGS TH OMSON Microelectronics Specifications mentioned in this publication are subject to change without notice This publication supersedes and replaces all information previously supplied SGS THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS THOMSON Microelectronics 1995 SGS THOMSON Microelectronics Printed in Italy All rights reserved SGS THOMSON Microelectronics GROUP OF COMPANIES Australia Brazil France Germany Hong Kong Italy Japan Korea Malaysia Malta Morocco The Nether lands Singapore Spain Sweden Switzerland Taiwan Thailand United Kingdom U S A 5 5 37 SES THOMSON
5. 0 0 BTAO8 OO SGS THOMSON A MICROELECTRONICS BTAO6 T D S A BTBO06 T D S A SENSITIVE GATE TRIACS FEATURES a VERY LOW let 10mA max a LOW lH 15mA max a BTA Family INSULATING VOLTAGE 2500Vigys UL RECOGNIZED E81734 DESCRIPTION The BTA BTBO6 T D S A triac family are high per formance glass passivated PNPN devices These parts are suitables for general purpose ap At plications where gate high sensitivity is required TO220AB Application on 4Q such as phase control and static Plastic switching ABSOLUTE RATINGS limiting values Parameter Value Unit RMS on state current Te 85 C 6 A 360 conduction angle Tc 90 C Non repetitive surge peak on state current tp 8 3 ms 63 A Tj initial 25 C tp 10 ms 60 I2t value tp 10 ms 18 A s Critical rate of rise of on state current Repetitive 10 Alus Gate supply IG 50mA dig dt 0 1A us F 50 Hz Non 50 Repetitive Storage and operating junction temperature range 40 to 150 C 40 to 110 C TI Maximum lead temperature for soldering during 10 s at 4 5 mm 260 C from case Symbol Parameter BTA BTBO6 Unit 400 T D S A 600 T D S A 700 T D S A VDRM Repetitive peak off state voltage 400 600 700 V VRRM Tj 110 C 1 5 March 1995 BTAO6 T D S A BTBO6 T D S A THERMAL RESISTANCES Symbol Parameter Value Unit Rth j a Junction to ambient 60 C W Rth

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