FAIRCHILD FDMC86324 Manual
Contents
1. 1000 Ciss T amp Lu O Coss E o 100 lt ou lt x O f 1 MHz Vas 0 V Crss 10 Li 0 1 1 10 80 Vps DRAIN TO SOURCE VOLTAGE V Figures Capacitance vs Drain to Source Voltage 30 lt 25 ML iia gt T E x br E a 20 gt cc Limited by Package Yoscdow O 15 q Ves 6V C 10 a 5 Rouc 3 C W 0 25 50 75 100 125 150 T CASE TEMPERATURE C Figure 10 Maximum Continuous Drain Current vs Case Temperature 1000 S Ves 10 V tc Lu s a 100 Lu D Z a C 10 x lt L ul SINGLE PULSE E Roga 125 C W a 1 T 25 C 0 5 C LILLLIL L LIIIN l 10 10 10 10 1 10 100 1000 t PULSE WIDTH sec Figure 12 Single Pulse Maximum Power Dissipation www fairchildsemi com LAASOW gloss J9MOd 9UUEUD N tL 6C6982IAQJ Typical Characteristics 1 25 c unless otherwise noted2. 2 1 DUTY CYCLE DESCENDING ORDER ae D 0 5 a 0 2 E 04 uN 01 0 05 E ui 0 02 DE E 0 01 N t A a c 0 01 t S t le SINGLE PULSE NOTES E DUTY FACTOR D ty to Roya 125 C W PEAK Ty Ppy X ZojA X Roya TA 0 001 ja MNN LIII fama RETE PE pp LLLI 10 10 10 10 1 10 100 1000 FDMC86324 Rev C t RECTANGULAR PULSE DURATION sec Figure 13 Junction to Ambient Transient Thermal Response Curve www fairchildsemi com LAASOW 4 U9U91J J9MOd 9UUEUD N tL C6982IAQJ Dimensional Outline and Pad Layout 3 30 0 10 A 2 37 MIN H PKG T D B 0 45 8 5 8 5 7 ry i 0 40 2 15 MIN D a KGG 480 O10 X P 1 0 65 i 0 70 MIN 4 A S 0 65 H 0 42 MIN PP JETAIL A L 495 N LAND PATTERN M ECOMMENDATION pargo ee Pero ese ee as Ge SS EUN 0 40 0 10 1 4 g 0 20
3. kGQ E if 2 00 0 10 i LEER E 9 39 2 2 27 NOTES BUSES dO TERES E SPECIFIED 0 52 be A PACKAGE STANDARD REFERENCE JEDEC MO 240 ISSUE A VAR BA DATED OCTOBER 2002 ve OLTRE B ALL DIMENSIONS ARE IN MILLIMETERS C DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH MOLD FLASH OR 110 BURRS DOES NOT EXCEED 0 10MM 090 D DIMENSIONING AND TOLERANCING PE ASME Y14 5M 1994 E DRAWING FILE NAME PQFNO8BREV1 M CSIOROSIO 0 05 oo Eo DT en l l SEATING D ANE JETAIL A SCALE 2X QFNOBBREV1 FDMC86324 Rev C 6 www fairchildsemi com LAASOW gloss J9MOd 9UUEU N L C69892IAQJ SSS eae FAIRCHILD DE SEMICONDUCTOR TRADEMARKS The following includes registered and unregistered trademarks and service marks owned by Fairchild Semiconductor and or its global subsidiaries and is not intended to be an exhaustive list of all such trademarks AccuPower F PFS Power SPM SYSTEM Auto SPM FRFET PowerTrench GENERAL Build it Now Global Power Resource M PowerXS M The Power Franchise CorePLUS Green FPS Programmable Active Droop the CorePOWER Green FPS e Series QFET
4. D wer CROSSVOLT Gmax QS BIN CTL GTO Quiet Series REM Current Transfer Logic IntelliMAX RapidConfigure eh rub d DEUXPEED ISOPLANAR m s X Dual Cool MegaBuck MN EL EcoSPARK MICROCOUPLER Saving our world 1mW W kW at a time TinvPower EfficentMax MicroFET SignalWise EU E ESBC MicroPak SmartMax Fi ie I MicroPak2 SMART START SEE Detect MillerDrive SPM TRUECURRENT Fairchild MotionMax STEALTH SerDes Fairchild Semiconductor Motion SPM SuperFET 3E FACT Quiet Series OptiHi TM SuperSOT 3 y FACT OPTOLOGIC SuperSOT 6 Des FAST OPTOPLANAR SuperSOT 8 UHC 7 FastvCore M SupreMOS hie A ET FETBench SyncFET sl FlashWriter PDP SPM Sync Lock a Am FPS XS Trademarks of System General Corporation used under license by Fairchild Semiconductor DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY FUNCTION OR DESIGN FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS NOR THE RIGHTS OF OTHERS THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS SPECIFICALLY THE WARRANTY THEREIN WHICH COVERS THESE PRODUCTS LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORI
5. SOURCE ON RESISTANCE 0 6 75 50 25 0 25 50 75 100 125 150 Ty JUNCTION TEMPERATURE C Figure3 Normalized On Resistance vs Junction Temperature 30 PULSE DURATION 80 us DUTY CYCLE 0 5 MAX 25 T Vps 5 V LT 20 Lu oc 5 15 o Ty 150 C z lt x 10 tc Ty 2 259C LV 5 Ty 55 C 0 2 3 4 5 6 7 Ves GATE TO SOURCE VOLTAGE V Figure 5 Transfer Characteristics FDMC86324 Rev C NORMALIZED DRAIN TO SOURCE ON RESISTANCE PULSE DURATION 80 us Ves 10 V DUTY CYCLE 0 5 MAX 0 0 5 10 15 20 25 30 Ip DRAIN CURRENT A Figure2 Normalized On Resistance vs Drain Current and Gate Voltage e N e o e PULSE DURATION 80 us Ib 7 DUTY CYCLE 0 5 MAX QI e n e oO e N e DS on DRAIN TO SOURCE ON RESISTANCE mo T 259C 4 5 6 7 8 9 10 Vas GATE TO SOURCE VOLTAGE V Figure4 On Resistance vs Gate to Source Voltage o e e Tj2259C ls REVERSE DRAIN CURRENT A 0 001 0 0 0 2 0 4 0 6 0 8 1 0 1 2 Vsp BODY DIODE FORWARD VOLTAGE V Figure6 Sourceto Drain Diode Forward Voltage vs Source Current www fairchildsemi com
6. to No Identification Needed Full Production make changes at any time without notice to improve the design Datasheet contains specifications on a product that is discontinued by Fairchild Obsolete Korin Progucion Semiconductor The datasheet is for reference information only Rev 148 FDMC86324 Rev C 7 www fairchildsemi com LAASOW glues 19MOd 9UUEU N 1 6982IAQJ
7. 3000 units 2010 Fairchild Semiconductor Corporation 1 www fairchildsemi com FDMC86324 Rev C LAASOW 4 U9U91J J9MOd 9UUEUD N tL C6982IAQJ Electrical Characteristics Tj 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVpss Drain to Source Breakdown Voltage Ip 250 uA Ves 20V 80 V Seuss pefSHACOWIEVO RUE IMPETA Ip 250 uA referenced to 25 C 69 mV C ATy Coefficient Ipss Zero Gate Voltage Drain Current Vps 64 V Ves 20V 1 LA lass Gate to Source Leakage Current Ves 20 V Vps 0 V 100 nA On Characteristics Vasith Gate to Source Threshold Voltage Vas Vps lp 250 uA 2 0 3 1 4 0 V A VGStin pc ee Dus p UE Ip 250 uA referenced to 25 C 9 mV C ATy Temperature Coefficient Vas 10V lp27A 19 1 23 DS on otatic Drain to Source On Resistance Vas 26V lp24A 25 5 37 mQ Ves 10V Ip 7A Tj 125 C 32 5 40 JFS Forward Transconductance Vpp 10 V Ip 7A 19 S Dynamic Characteristics Ciss Input Capacitance 725 965 pF owe Output Capacitance Mes i Yess uv 175 235 pF Cree Reverse Transfer Capacitance 15 25 pF Rg Gate Resistance 0 5 Q Switching Characteristics ta on Turn On Delay Time 8 17 ns t Ris
8. LAASOW gloss J9MOd 9UUEU N L C69892IAQJ Typical Characteristics 1 25 c unless otherwise noted 10 S i Ipz7A Vpp 50 V Z 8 lt o Voo 25 V Vpp 75 V u 6 o tc 2 O O0 4 O LE u lt 2 B gt 0 0 2 4 6 8 10 12 14 Qy GATE CHARGE nC Figure 7 Gate Charge Characteristics 10 9 8 lt 7 7 6 a 5 X C 4 O u 3 o z j 2 lt gt lt B E 1 0 01 0 1 1 10 30 tay TIME IN AVALANCHE ms Figure9 Unclamped Inductive Switching Capability 50 TTN N ES ee 10 a 100 ps lt PTN i x ES bE sne bi i Z x Ay x Lu S s 1 ms oc wiis 8 N S oc 1 N N bs D lt S THIS AREA IS Se 10 ms x z LIMITED BY rs MC SCR A o4 Iii SiatEPuLsE TN M 00 ms jae Ty MAX RATED s Roya 125 C W Nou S T 25 C MM 105 A 0 01 T MLS 0 01 0 1 1 10 100 500 Vps DRAIN to SOURCE VOLTAGE V Figure 11 Forward Bias Safe Operating Area FDMC86324 Rev C
9. ZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION As used here in 1 Life support devices or systems are devices or systems which a are 2 A critical component in any component of a life support device or intended for surgical implant into the body or b support or sustain life system whose failure to perform can be reasonably expected to cause and c whose failure to perform when properly used in accordance with the failure of the life support device or system or to affect its safety or instructions for use provided in the labeling can be reasonably effectiveness expected to result in a significant injury of the user ANTI COUNTERFEITING POLICY Fairchild Semiconductor Corporation s Anti Counterfeiting Policy Fairchild s Anti Counterfeiting Policy is also stated on our external website www Fairchildsemi com under Sales Support Counterfeiting of semiconductor parts is a growing problem in the industry All manufactures of semiconductor products are experiencing counterfeiting of their parts Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation substandard performance failed application and increased cost of production and manufacturing delays Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts Fairchild strongl
10. e Time Vpp 50 V Ip 7 A 4 10 ns tavott Turn Off Delay Time Vas 10 V Reen 6 O 14 25 ns lr Fall Time 4 10 ns n Total Gate Charge 13 18 nC SS Total Gate Charge 8 11 nC Qgs Total Gate Charge 3 7 nC Qod Gate to Drain Miller Charge 3 6 nC Drain Source Diode Characteristics m Vas 20 V lg2 7A Note 2 0 81 1 3 Vsp Source to Drain Diode Forward Voltage Ve EUV I D Note 2 0 75 15 V ly Reverse Recovery Time I 7 A di dt 100 A us 44 70 ns Qu Reverse Recovery Charge 40 65 nC NOTES 1 RgjA is determined with the device mounted on a lin pad 2 oz copper pad on a 1 5 x 1 5 in board of FR 4 material Roc is guaranteed by design while Rgca is determined by the user s board design a 53 C W when mounted on a b 125 C W when mounted on 1 in pad of 2 oz copper a minimum pad of 2 oz copper 2 Pulse Test Pulse Width 300 us Duty cycle 2 0 96 3 Starting Tj 25 C N ch L 1 mH las 12 A Vpp 72 V Ves 10 V FDMC86324 Rev C 2 www fairchildsemi com LAASOW gloss J9MOd 9UUEUD N tL 6C6982IAQJ Typical Characteristics 1 25 c unless otherwise noted 30 PULSE DURATION 80 us DUTY CYCLE 0 5 MAX 25 20 15 10 Ip DRAIN CURRENT A 0 0 0 5 1 0 1 5 2 0 2 5 3 0 Vps DRAIN TO SOURCE VOLTAGE V Figure 1 On Region Characteristics 2 0 1 8 1 6 1 4 1 2 1 0 0 8 NORMALIZED DRAIN TO
11. ea are FAIRCHILD C SEMICONDUCTOR May 2010 FDMC86324 N Channel Power Trench MOSFET 80 V 20 A 23 mO Features General Description B Max rDs on 23 MQ at Veg 10V lp 27A This N Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has mE A 1 1 1 Msi ee Gee iD dun been especially tailored to minimize the on state resistance and B Low Profile 1 mm max in Power 33 yet maintain superior switching performance B 100 UIL Tested B DC DC Conversion Top Bottom s Pin 1 x5 D G D D D D D Power 33 MOSFET Maximum Ratings T 25 c unless otherwise noted Symbol Parameter Ratings Units Vos Drain to Source Voltage 80 V Ves Gate to Source Voltage 20 V Drain Current Continuous Package limited Te 225 C 20 Continuous Silicon limited Tec 25 C 30 A D Continuous Ta 25 C Note 1a 7 Pulsed 30 EAS Single Pulse Avalanche Energy Note 3 72 mJ p Power Dissipation Tc 25 C 41 W j Power Dissipation Ta 25 C Note 1a 2 3 Ty TsTG Operating and Storage Junction Temperature Range 55 to 150 C Thermal Characteristics Royc Thermal Resistance Junction to Case 3 CN Rosa Thermal Resistance Junction to Ambient Note 1a 53 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC86324 FDMC86324 Power 33 13 12 mm
12. y encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts have full traceability meet Fairchild s quality standards for handing and storage and provide access to Fairchild s full range of up to date technical and product information Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Datasheet contains the design specifications for product development Specifications Advance Information Formative In Design may change in any manner without notice Datasheet contains preliminary data supplementary data will be published at a later Preliminary First Production date Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design M Datasheet contains final specifications Fairchild Semiconductor reserves the right
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FAIRCHILD FDMC86324 Manual