ON Semiconductor NTP10N40 NTB10N40 handbook
Contents
1. 54747 NTP10N40 NTB10N40 Preferred Device Advance Information Power MOSFET 10 Amps 400 Volts N Channel TO 220 and D2PAK Designed for high voltage high speed switching applications in power supplies converters power motor controls and bridge circuits Features Higher Current Rating Lower RDS on Lower Capacitances Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified Typical Applications Switch Mode Power Supplies PWM Motor Controls Converters Bridge Circuits MAXIMUM RATINGS Tc 25 C unless otherwise noted SU BE Drain Source Voltage Vpss 400 Drain Gate Voltage Ras 1 0 VDGR 400 Vdc Gate Source Voltage Vdc Continuous Vas 20 Non Repetitive tp lt 10 ms VGSM 40 Drain Adc Continuous ID 10 Continuous 100 C ID 7 5 Single Pulse tp lt 10 us IDM 35 Total Power Dissipation Pp 142 Watts Derate above 25 C 1 14 Operating and Storage Temperature TJ Tstg 55 to 150 Range Single Drain to Source Avalanche EAS 500 mJ Energy Starting Ty 25 C Vpp 100 Vac Vas 10 Vdc 10A L2 10 mH 25 0 Thermal Resistance C W Junction to Case Rec 0 88 Junction to Ambient ReJA 62 5 Junction to Ambient Note 1 RJA 50 Maximum Lead Temperature for TL 260 C Soldering Purposes 1 8 from case for 10 seconds 1 When surface mounte2. 08 7140 Mon Fri 2 30pm to 7 00pm CET Email ONlit german hibbertco com French Phone 1 303 308 7141 Mon Fri 2 00pm to 7 00pm CET Email ONIit french Qhibbertco com English Phone 1 303 308 7142 Mon Fri 12 00pm to 5 00pm GMT Email ONlit hibbertco com EUROPEAN TOLL FREE ACCESS 00 800 4422 3781 Available from Germany France Italy UK Ireland Email ONlit spanish hibbertco com Toll Free from Mexico Dial 01 800 288 2872 for Access then Dial 866 297 9322 ASIA PACIFIC LDC for ON Semiconductor Asia Support Phone 303 675 2121 9 00am to 1 00pm Hong Kong Time Toll Free from Hong Kong amp Singapore 001 800 4422 3781 Email ONlit asia hibbertco com JAPAN ON Semiconductor Japan Customer Focus Center 4 32 1 Nishi Gotanda Shinagawa ku Tokyo Japan 141 0031 Phone 81 3 5740 2700 Email r14525 onsemi com ON Semiconductor Website http onsemi com For additional information please contact your local Sales Representative NTP10N40 D
3. MILLIMETERS A MAX MIN MAX A 0340 0380 864 9 65 B 0 380 0 405 965 10 29 C 0 160 0 190 406 483 D 0 020 0 035 051 0 89 K 0 045 0 055 114 140 EF G 0 100BSC 2 54 BSC 1 J 0 080 0 110 203 279 J 6 018 0 025 046 0 64 0 090 0 110 229 279 gt H 0 575 0 625 1460 15 88 v 0 045 0055 114 140 T B STYLE 2 PIN 1 GATE 2 DRAIN 3 SOURCE 4 DRAIN http onsemi com 3 NTP10N40 NTB10N40 ON Semiconductor and Lu are trademarks of Semiconductor Components Industries LLC SCILLC SCILLC reserves the right to make changes without further notice to any products herein SCILLC makes no warranty representation or guarantee regarding the suitability of its products for any particular purpose nor does SCILLC assume any liability arising out of the application or use of any product or circuit and specifically disclaims any and all liability including without limitation special consequential or incidental damages Typical parameters which may be provided in SCILLC data sheets and or specifications can and do vary in different applications and actual performance may vary over time All operating parameters including Typicals must be validated for each customer application by customer s technical experts SCILLC does not convey any license under its patent rights nor the rights of others SCILLC products are not designed intended or authorized f
4. d to an FR4 board using the minimum recommended pad size This document contains information on a new product Specifications and information herein are subject to change without notice Semiconductor Components Industries LLC 2000 1 November 2000 Rev 1 ON Semiconductor http onsemi com 10 AMPERES 400 VOLTS RDS on 500 mo N Channel D TO 220AB D2PAK CASE 221A CASE 418B STYLE 5 STYLE 2 MARKING DIAGRAMS AND PIN ASSIGNMENTS Drain Drain NTB10N40 NTP10N40 a 1 Gate NTx10N40 Device Code Drain LL Location Code Y Year WW Work Week ORDERING INFORMATION shiping NTP10N40 TO 220AB 50 Units Rail NTB10N40 D2PAK 50 Units Rail NTB10N40T4 D2PAK 800 Tape amp Reel Preferred devices are recommended choices for future use and best overall value Publication Order Number NTP10N40 D NTP10N40 NTB10N40 ELECTRICAL CHARACTERISTICS Tc 25 C unless otherwise noted Charteris Mm we Me OFF CHARACTERISTICS Drain to Source Breakdown Voltage V BR DSS Vdc Vas 0 Vdc Ip 0 25 mAdc 400 Temperature Coefficient Positive 475 mvV C Zero Gate Voltage Collector Current Ipss uAdc Vps 400 Vas 0 Vdc 10 Vps 400 Vdc Vas 0 Vdc Ty 125 C 100 Gate Body Leakage Current Vas 20 Vps 0 lasst 100 ON CHARACTERISTICS Note 2 Ga
5. junction temperature http onsemi com 2 T SEATING PLANE G lt m D3PL NTP10N40 NTB10N40 0 13 0 005 PACKAGE DIMENSIONS TO 220 THREE LEAD TO 220AB CASE 221 09 ISSUE AA NOTES CTS 5 1 DIMENSIONING AND TOLERANCING PER ANSI Y14 5M 1982 Cle 2 CONTROLLING DIMENSION INCH 3 DIMENSION 2 DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ALLOWED i INCHES MILLIMETERS MAX MN MAX 0 570 0 620 1448 15 75 u 0 380 0 405 9 66 10 28 C 0 160 0 190 407 482 D 0 025 0 035 0 64 0 88 0 42 0 147 361 373 G 0095 0 105 242 2 66 H 0 110 0 155 280 393 J 0 018 0 025 046 0 64 0 500 0 562 1270 1427 R L 0 045 0 060 1 15 152 0 190 0 210 483 533 J 0 100 0 120 254 304 0 080 0 110 204 279 0045 0 055 115 1 39 T 0235 0255 597 647 u 000 0 050 000 127 v oos 15 z 0 080 204 STYLE 5 PIN GATE 2 DRAIN 3 SOURCE 4 DRAIN D2PAK CASE 418B 03 ISSUED V NOTES 1 DIMENSIONING AND TOLERANCING PER ANSI Y14 5M 1982 2 CONTROLLING DIMENSION INCH INCHES
6. or use as components in systems intended for surgical implant into the body or other applications intended to support or sustain life or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application Buyer shall indemnify and hold SCILLC and its officers employees subsidiaries affiliates and distributors harmless against all claims costs damages and expenses and reasonable attorney fees arising out of directly or indirectly any claim of personal injury or death associated with such unintended or unauthorized use even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part SCILLC is an Equal Opportunity Affirmative Action Employer PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment Literature Distribution Center for ON Semiconductor CENTRAL SOUTH AMERICA Spanish Phone 303 308 7143 Mon Fri 8 00am to 5 00pm MST P O Box 5163 Denver Colorado 80217 USA Phone 303 675 2175 or 800 344 3860 Toll Free USA Canada Fax 303 675 2176 or 800 344 3867 Toll Free USA Canada Email ONlit hibbertco com Fax Response Line 303 675 2167 or 800 344 3810 Toll Free USA Canada American Technical Support 800 282 9855 Toll Free USA Canada EUROPE LDC for ON Semiconductor European Support German Phone 1 303 3
7. te Threshold Voltage VGS th Vdc Ip 0 25 mA Vps Vas 2 0 2 5 4 0 Temperature Coefficient Negative 6 5 mvV C Static Drain to Source On Resistance 10 Vdc Ip 5 0 Adc RDS on 350 500 mOhm Drain to Source On Voltage VDS on Vdc Vas 10 Vdc Ip 10 Adc 6 0 Vas 10 Vdc Ip 5 0 Ade Ty 125 C 5 3 Forward Transconductance Vps 15 Ip 5 0 Adc gFS 2 0 7 0 Mhos DYNAMIC CHARACTERISTICS Input Capacitance Ciss 1440 2020 pF Vps 25 Vas 0 Vac f 1 0 MHz Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS Note 3 Turn On Delay Time Rise Time Vpp 200 Vac Ip 10 Adc Vas 10 Turn Off Delay Time RG 9 1 9 Fall Time Gate Charge Vps 320 Ip 10 VGs 10 Vac SOURCE DRAIN DIODE CHARACTERISTICS Forward On Voltage Note 2 Is 10 Adc Vas 0 Vdc Is 10 Adc VGs 0 Vdc Ty 125 C Reverse Recovery Time Is 10 Adc Vas 0 Vdc dis dt 100 A us Reverse Recovery Stored Charge INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance Measured from contact screw on tab to center of die Measured from the drain lead 0 25 from package to center of die Internal Source Inductance Measured from the source lead 0 25 from package to source bond pad 2 Pulse Test Pulse Width lt 300 us Duty Cycle lt 2 3 Switching characteristics are independent of operating
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ON Semiconductor NTP10N40 NTB10N40 handbook