TOSHIBA TLP251F Manual(1)
Contents
1. which may cause loss of human life or bodily injury Unintended Usage Unintended Usage include atomic energy control instruments airplane or spaceship instruments transportation instruments traffic signal instruments combustion control instruments medical instruments all types of safety devices etc Unintended Usage of TOSHIBA products listed in this document shall be made at the customer s own risk Gallium arsenide GaAs is a substance used in the products described in this document GaAs dust and fumes are toxic Do not break cut or pulverize the product or use chemicals to dissolve them When disposing of the products follow the appropriate regulations Do not dispose of the products with other industrial waste or with domestic garbage The products described in this document are subject to the foreign exchange and foreign trade laws The information contained herein is presented only as a guide for the applications of our products No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others The information contained herein is subject to change without notice 3 2001 06 01 i 4 www dzsc2. AS 78 TLP251F H Ay TOSHIBA TLP251F TOSHIBA PHOTOCOUPLER GaAfAs IRED amp PHOTO IC TLP251F INVERTER FOR AIR CONDITIONOR Unit in mm INDUCTION HEATING TRANSISTOR INVERTER POWER MOS FET GATE DRIVE IGBT GATE DRIVE 6 4 0 25 The Toshiba TLP251F consists of a GaAfAs light emitting diode 10 16 0 25 and a integrated photodetector EBri PA This unit is 8 lead DIP package a7 TLP251F is suitable for gate driving circuit of IGBT or power MOS FET Especially TLP251 is capable of direct gate drive of lower 50 1 49 0 25 84 power IGBTs 15A o 2 54 0 25 1 2 0 15 Input Threshold Current Ir 5mA Max e Supply Current 1lmA Max ieee e Supply Voltage 10 35V e Output Peak Current 0 4A Max Weight 0 54g e Switching Time tpHL tpLH 1ys Max e Isolation Voltage 2500Vyms Min UL Recognized UL1577 File No E67349 Option D4 type VDE Approved DIN VDE0884 06 92 Certificate No 87447 Maximum Operating Insulation Voltage 1140VpK Highest Permissible Over Voltage 6000VPK Note 1 When a VDE0884 approved type is needed please designate the Option D4 e Structural Parameter Creepage Distance 8 0mm Min Clearance 8 0mm Min 1 2001 06 01 i 4 www dzsc TOSHIBA TLP251F EN TABLE o ond PIN CONFIGURATION TOP VIEW SCHMATIC N C ANODE CATHODE N C GND vo OUTPUT VF n ONDAN eNe Veg N
3. ote 2 A 0 1uF bypass capacitor must be connected between pin 8 and 5 2 2001 06 01 i HE www dzsc TOSHIBA TLP251F RESTRICTIONS ON PRODUCT USE 000707EBC TOSHIBA is continually working to improve the quality and reliability of its products Nevertheless semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress It is the responsibility of the buyer when utilizing TOSHIBA products to comply with the standards of safety in making a safe design for the entire system and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life bodily injury or damage to property In developing your designs please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications Also please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices or TOSHIBA Semiconductor Reliability Handbook etc The TOSHIBA products listed in this document are intended for usage in general electronics applications computer personal equipment office equipment measuring equipment industrial robotics domestic appliances etc These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and or reliability or a malfunction or failure of
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TOSHIBA TLP251F Manual(1)