ST XL0840 handbook
Contents
1. One cycle Number of cycles ie ey 1 10 100 1000 Fig 10 On state characteristics maximum val ues ITM A 10 00 1 00 Tj 125 C 0 10 i Tj 25 C Tj max Vto 1 00 V VTM V Rd 600 mo 0 01 0 1 2 3 4 5 6 Fig 7 Relative variation of dV dt immunity versus gate cathode capacitance typical values dV dt Cgk dV dt Rgk 1kQ 10 I Tj 125 C 9 VD 270V Rgk 1kW 8 7 6 5 4 3 2 1 Cgk nF 0 1 00 10 00 Fig 9 Non repetitive surge peak on state current for a sinusoidal pulse with width tp lt 10ms and cor responding value of It ITSM A Pt A s 100 0 Tj initial 25 C ITSM 10 0 1 0 rt tp ms 0 1 0 01 0 10 1 00 10 00 4 5 XL0840 PACKAGE MECHANICAL DATA TO 92 Millimeters Inches Typ Max Min a ras bof s o fase fore D 4 40 0 173 E 12 70 0 500 F 3 70 a 0 502. Information furnished is believed to be accurate and reliable However STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics Specifications mentioned in this publication are subject to change without notice This publication supersedes and replaces all information previously supplied STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap proval of STMicroelectronics The ST logo is a registered trademark of STMicroelectronics 2002 STMicroelectronics Printed in Italy All rights reserved STMicroelectronics GROUP OF COMPANIES Australia Brazil Canada China Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom United States http www st com lt 5 5
3. 0 110 120 130 ky XL0840 Fig 2 1 Average and D C on state current ver sus lead temperature IT av A D C a 180 o1 Tlead C 0 25 50 75 100 125 Fig 3 Relative variation of thermal impedance junction to ambient versus pulse duration K Zth j a Rth j a 1 E 00 1 E 01 tp s 1 E 02 1 E 02 1 E 01 1 E 00 1 E 01 1 E 02 1 E 03 Fig 5 Relative variation of holding current versus gate cathode resistance typical values IH Rgk IH Rgk 1kQ 10 Tj 25 C 9 8 7 6 5 4 3 2 l Rgk kQ 0 i 0 01 0 10 1 00 10 00 3 5 XL0840 Fig 6 Relative variation of dV dt immunity versus gate cathode resistance typical values dV dt Rgk dV dt Rgk 1kK9 5 l EF VD 270V Rgk k fh 0 10 1 00 10 00 Fig 8 Surge peak on state current versus number of cycles ITSM A 8 n repeti tp 10ms 6 Non repetitive p j initial 25 C
4. STA XL0840 SENSITIVE GATE 0 8A SCRs A MAIN FEATURES Symbol IT RMS G VDRM K let DESCRIPTION Thanks to its highly sensitive triggering levels the XL0840 device is suitable for all high volumes appli cations where the available gate current is limited such as Christmas lights control ABSOLUTE RATINGS limiting values Parameter RMS on state current 180 conduction angle Tl 55 C Average on state current 180 conduction angle Tl 55 C Non repetitive surge peak on state 7 current Tj 25 C I7t Value for fusing z Tj 25 C Critical rate of rise of on state current F 60 Hz Tj 125 C lq 2 x lar tr lt 100ns Peak gate current tp 20us Tj 125 C Average gate power dissipation Tj 125 C Storage junction temperature range 40 to 150 Operating junction temperature range 40 to 125 January 2002 Ed 1A 1 5 XL0840 ELECTRICAL CHARACTERISTICS Tj 25 C unless otherwise specified Symbol Test Conditions XL0840 unit IGT Vp 12V R 140Q9 MAX 200 uA VGT MAX 0 8 V Veo Vo Vorm RL 3 3kQ Rex kO Tj 125 C MIN 0 1 V VRG IRG 10A MIN i Ir 50MA Rex 1kQ MAX 5 mA i lg 1mA Rek 1kQ MAX mA dV dt Vp 67 Vorm Rex 1O Tj 125 C 75 Vim Im 1 6A tp 380ys Tj 25 C MAX 1 95 V VTO Threshold voltage IDRM Vorm Rek 1kQ Tj 25 C MAX uA Tj 125 C 100 THERMAL RESISTANCES Symbol Parameter Rth j
5. a Junction to ambient DC Rth j l Junction to lead DC PRODUCT SELECTOR Part Number Voltage Sensitivity Package XL0840 400V 200 pA TO 92 ORDERING INFORMATION L 08 40 X SENSITIVE SCR l LIGHT CONTROL VOLTAGE 40 400V CURRENT 0 8A OTHER INFORMATION Part Number Marking Weight Base quantity Packing mode 2 5 ky Fig 1 Maximum average power dissipation ver sus average on state current P W 1 0 amp 180 0 9 0 8 0 7 0 6 0 5 0 4 0 3 180 0 2 a aN 2h oa IT av A I 0 0 1 ii ll ll i 0 00 0 05 0 10 0 15 0 20 0 25 0 30 0 35 0 40 0 45 0 50 Fig 2 2 Average and D C on state current ver sus ambient temperature device mounted on FR4 with recommended pad layout IT av A 7 0 6 D C a 180 Tamb C l 0 25 50 75 100 125 Fig 4 Relative variation of gate trigger current holding current and latching current versus junc tion temperature typical values IGT IH IL Tj IGT IH IL Tj 25 C 3 0 IGT 1 0 Hawk 4 Neetnbor Rgk 1kw _ _ e N T epearen THC 40 30 20 10 0 10 20 30 40 50 60 70 80 90 10
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ST XL0840 handbook