Infineon SMBD7000/MMBD7000... handbook
Contents
1. IFmax FDC f tp IFmax IFDC 102 SMBD7000 MMBD7000 Mar 10 20042. 0 SMBD7000 0 0O 0 0 Meda 00 Infineon technologies SMBD7000 MMBD7000 Silicon Switching Diode Array e For high speed switching applications SMBD7000 MMBD7000 3 A lt Type Package Configuration Marking SMBD7000 MMBD7000 SOT23 s5C Maximum Ratings at Ta 25 C unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage VR V Peak reverse voltage VRM Forward current F Non repetitive peak surge forward current FSM t 1us t 1s Total power dissipation Prot Ts lt 28 C Junction temperature T Storage temperature Tata 65 150 Thermal Resistance Parameter Unit Junction soldering point K W SMBD7000 MMBD7000 1For calculation of Rinja please refer to Application Note Thermal Resistance 1 Mar 10 2004 e Infineon technologies SMBD7000 MMBD7000 Electrical Characteristics at Ta 25 C unless otherwise specified Parameter Symbol Values Unit min typ max DC Characteristics Breakdown voltage VBR 100 V BR 100 pA Reverse current IR HA VR 50 V 0 3 VR 100 V 0 5 VR 50 V Ta 150 C 100 Forward voltage Ve mV IF 1 mA 550 700 I 10 mA 670 820 I 50 mA 1000 I 100 mA 750 1100 I 150 mA 1250 AC Characteristics Diode capacitance l 2 pF VR 0 V f 1 MHz Reverse recovery tim
3. e 4 ns IF 10 mA IR 10 mA measured at IR 1mA R 100 Q Test circuit for reverse recovery time Pulse generator i 100ns D 0 05 t 0 6ns Ri 50Q Oscillograph Oscillograph R 502 t 0 35ns C lt 1pF EHN00019 2 Mar 10 2004 technologies Reverse current p f TA Vp Parameter 105 rl nA 104 103 70V gt 25 V 10 107 0 25 50 75 100 C 150 Forward current If f VF Ta 25 C SMBD 7000 EHB00137 150 50 SMBD7000 MMBD7000 Forward Voltage Vf f TA I Parameter 1 0 SMBD 7000 EHB00139 yi A Ip 1 Ve E m m 0 5 0 0 50 100 C 150 Forward current lf f Ts SMBD7000 MMBD7000 250 mA 200 175 IF 150 125 100 75 50 25 15 30 45 60 75 90 105 120 C 150 Ts Mar 10 2004 Permissible Puls Load Rinus f ip RthJs technologies Permissible Pulse Load
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Infineon SMBD7000/MMBD7000... handbook