ST STE40NA60 handbook
Contents
1. HOMSON oP V wicrosuecrromes2. O O STE4ONA6A O ky SGS THOMSON MICROELECTRONICS STE40NA60 N CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE Voss Ros on lo STE40NA60 600 V lt 0 135 Q 40A TYPICAL Ros on 0 12 Q HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY VERY LARGE SOA LARGE PEAK POWER CAPABILITY EASY TO MOUNT SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS EXTREMELY LOW Rth Junction to case VERY LOW INTERNAL PARASITIC INDUCTANCE ISOLATED PACKAGE UL RECOGNIZED APPLICATIONS SMPS amp UPS MOTOR CONTROL WELDING EQUIPMENT OUTPUT STAGE FOR PWM ULTRASONIC CIRCUITS ABSOLUTE MAXIMUM RATINGS Parameter Drain source Voltage Vas 0 Drain gate Voltage Ras 20 kQ PRELIMINARY DATA ISOTOP INTERNAL SCHEMATIC DIAGRAM as a 4 5004590 2 Gate source Voltage Drain Current continuous at Te 25 C Drain Current continuous at Tc 100 C Drain Current pulsed Total Dissipation at To 25 C Derating Factor 3 6 Storage Temperature 55 to 150 Max Operating Junction Temperature 150 Insulation Withhstand Voltage AC RMS Pulse width limited by safe operating area January 1998 2500 1 5 STE40NA60 THERMAL DATA Thermal Resistance Junction case Thermal Resistance Case heatsink With Conductive Grease Applied Rthj case Rthc h AVALANCHE CHARACTERISTICS Symbol Parameter Avalanche Cur
3. me Reverse Recovery Charge Reverse Recovery Current Isp 40 A Isp 40 A di dt 100 A us Vr 100V Tj 150 C Pulsed Pulse duration 300 us duty cycle 1 5 Pulse width limited by safe operating area LT Srencuscrmones 3 5 STE40NA60 ISOTOP MECHANICAL DATA o 2 al N H 2 57 SGS THOMSON V iscromscrraniecs STE40NA60 Information furnished is believed to be accurate and reliable However SGS THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use No license is granted by implication or otherwise under any patent or patent rights of SGS THOMSON Microelectronics Specifications mentioned in this publication are subject to change without notice This publication supersedes and replaces all information previously supplied SGS THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS THOMSON Microelectonics 1998 SGS THOMSON Microelectronics Printed in Italy All Rights Reserved SGS THOMSON Microelectronics GROUP OF COMPANIES Australia Brazil Canada China France Germany Italy Japan Korea Malaysia Malta Morocco The Netherlands Singapore Spain Sweden Switzerland Taiwan Thailand United Kingdom U S A jy SGS T
4. rent Repetitive or Not Repetitive pulse width limited by Tj max 5 lt 1 Single Pulse Avalanche Energy starting Tj 25 C Ip lar Voo 50 V OFF Parameter Test Conditions Drain source Breakdown Voltage Zero Gate Voltage Drain Current Ves 0 Gate body Leakage Current Vps 0 Gate Threshold Voltage Vas th Static Drain source On Resistance Rps on ID on On State Drain Current Ip 5004A Vas 0 Vos Max Rating Vos 0 8x Max Rating Tc 125 C Vps Vas Ip 1mA Vas 10V Ip 20A Vos gt ID on X RDS on max Vas 10 V DYNAMIC Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 5 Test Conditions Vos gt Ip on X RDS on max Ip 20 A Vos 25V f 1 0MHz Vas 0 SGS THOMSON MICROELECTRONICS ky Min Typ 13000 1500 350 16000 1700 450 STE40NA60 ELECTRICAL CHARACTERISTICS continued SWITCHING ON Parameter Turn on Time Rise Time Total Gate Charge Gate Source Charge Gate Drain Charge Test Conditions Vpop 300 V Ip 20A Re 4 72 Vas 10 V Voo 480V lp 40A Ves 10V Parameter Test Conditions Off voltage Rise Time Fall Time Cross over Time Parameter Source drain Current Source drain Current pulsed Vop 480 V Ip 40A Re 4 72 Ves 10V Test Conditions Forward On Voltage Reverse Recovery Ti
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ST STE40NA60 handbook