ST STE110NS20FD N-CHANNEL 200V - 0.022 - 110A ISOTOP MESH OVERLAY Power MOSFET handbook
Contents
1. 0 5 10 15 20 Vos V Transconductance HV08500 grs S Vos 15V TJ 2 50 C 95 C 60 150 C 40 20 5 10 15 i Gate Charge vs Gate source Voltage HV08520 Ves V Vos 1 60V 12 lo 100A 9 6 3 0 100 200 300 QglnC 4 8 Transfer Characteristics In A HV08495 Vos 25V 200 50 0 2 4 6 8 Ves V Static Drain source On Resistance Rps on mOhm HV08510 Ve 10y 40 30 20 10 20 40 60 80 lo A Capacitance Variations HV08530 0 10 20 30 40 Vos V Normalized Gate Thereshold Voltage vs Temp HV07680 Ves th norm 0 9 0 8 0 7 50 0 50 100 150140 Source drain Diode Forward Characteristics HV08550 Vei V 0 9 0 8 0 7 0 6 o 20 40 60 80 100 IA s STE110NS20FD Normalized On Resistance vs Temperature HV08540 Roston norm 0 90 50 0 50 100 150140 5 8 STE110NS20FD Fig 1 Unclamped Inductive Load Test Circ2. STELIONS20FD ST STE110NS20FD N CHANNEL 200V 0 0229 110A ISOTOP MESH OVERLAY Power MOSFET STE110NS20FD 200V lt 0 0240 110 A TYPICAL Rps on 0 0220 EXTREMELY HIGH dv dt CAPABILITY 100 AVALANCHE TESTED GATE CHARGE MINIMIZED 20V GATE TO SOURCE VOLTAGE RATING LOW INTRINSIC CAPACITANCE FAST BODY DRAIN DIODE LOW trr Om ISOTOP DESCRIPTION Using the latest high voltage MESH OVERLAY process STMicroelectronics has designed an ad vanced family of power MOSFETs with outstanding performances The new patented STrip layout cou pled with the Company s proprietary edge termina INTERNAL SCHEMATIC DIAGRAM tion structure gives the lowest RDS ON per area exceptional avalanche and dv dt capabilities and unrivalled gate charge and switching characteris I tics APPLICATIONS 7 i HIGH CURRENT HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLY SMPS us DC AC CONVERTER FOR WELDING EQUIPMENT AND UNINTERRUPTABLE POWER SUPPLY AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS ove Do ILI CN RN hh Drain Current continuos at Tc 25 C Drain Current continuos at Tc 100 C Drain Current aa e T v ie or sm apr Pulse width limited by safe operating area 1 lsp lt 110A di dt 200A us Vpp lt Venypss Tj Tumax inn 2002 1 8 STE110NS20FD THERMAL DATA Rthj case Thermal Resistance Junction case Max Rthj amb Thermal
3. Resistance Junction ambient Max 30 Ti Maximum Lead Temperature For Soldering Purpose 300 AVALANCHE CHARACTERISTICS JAR Avalanche Current Repetitive or Not Repetitive 110 A pulse width limited by Tj max EAS Single Pulse Avalanche Energy starting Tj 25 C Ip lan Vpp 50 V ELECTRICAL CHARACTERISTICS TCASE 25 C UNLESS OTHERWISE SPECIFIED OFF V gRypss Drain source Ip 250 pA Vas 0 Breakdown Voltage Ipss Zero Gate Voltage Vps Max Rating 10 Drain Current Vos 0 Vps Max Rating Tc 125 C 100 less Gate body Leakage Vas 20V 4100 Current Vps 0 ON 1 PERI sms ja mejam Vest Vest Gate Threshold Voltage Threshold Gate Threshold Voltage Vps Ves lp Vos Vos Ip 2504A Rps on Static Drain source On 10V Ip 50A 022 NEMI 024 Resistance DYNAMIC EE Parameter Test Conditions NEN Transconductance Vps gt ID on X RDS on max Ip 50A Input Capacitance Vos 25V f 1 MHz Vas 0 Output Capacitance Reverse Transfer Capacitance Note 1 Pulsed Pulse duration 300 us duty cycle 1 5 s 2 8 STE110NS20FD ELECTRICAL CHARACTERISTICS CONTINUED SWITCHING ON om Pe onome Dm De Wee Duc Turn on Delay Time Vpp 100V Ip 50A Ra 4 79 Ves 10V Rise Time see test circuit Figure 3 Total Gate Charge Vpp 100V Ip 100A Gate Source Charge Vas 10V Gate Drain Charge Off voltage Rise
4. Time Vpp 100V Ip 100A 245 ns RG 4 70 Ves 10V see test circuit Figure 5 Cross over Time 220 ns Fall Time ns F DRAIN DIODE EL NN Current 110 A EM 2 Source drain Current pulsed Lem meom ersmavss E 5 KE Reverse Recovery Time Isp 100A di dt 100A us Vpp 160V T 150 C see test circuit Figure 5 Reverse Recovery Charge Reverse Recovery Current Note 1 Pulsed Pulse duration 300 us duty cycle 1 5 96 2 Pulse width limited by safe operating area Safe Operating Area Thermal Impedance HV08480 GC54800 Io A K H 100us 2 10 7 ims B 4 10 m t 0 5 10 5 0 2 Zw k Rinse 0 tp T 2 107 o ki 10 0 05 L 0 02 p D C OPERATIO SINGLE PULSE T 2 18 2 4 68 2 4 68 2 4 68 107 4 3 2 1 0 107 0 10 0 Vas V 10 0 o7 O O t s s 3 8 STE110NS20FD Output Characteristics HV08490
5. seguences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics Specification mentioned in this publication are subject to change without notice This publication supersedes and replaces all information previously supplied STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics The ST logo is a trademark of STMicroelectronics 2000 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia Brazil China Finland France Germany Hong Kong India Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom U S A http www st com s 8 8
6. uit Fig 2 Unclamped Inductive Waveform UNCLAMPED INDUCTIVE WAVEFORMS L V BR DSS Vp o 2200 3 3 o BF pF Vop E O E V le DUT Vop ie pon e e e ROJEN SC05970 SCO5980 Fig 3 Switching Times Test Circuit For Fig 4 Gate Charge test Circuit Resistive Load 4 8 oD 12v 47K Q k R 2200 3 3 mm lini KA 100nF MOE yo p D ls coNsT u V 20V Vewax 000 u k DUT Ves H o Q aii Re 1 A laza 7 v DUI Pr Ue Ys S t 47KO Py A CET l 5C06000 505990 aS x Fig 5 Test Circuit For Inductive Load Switching And Diode Recovery Times gt A gt A GA D Mos HI DIODE FAST c e 4 A ooo L 100uH ke M S 08 3 3 1000 B B pF uF Voo 250 D m SC06010 6 8 s STE110NS20FD ISOTOP MECHANICAL DATA Olz r cir o mn imojou 8 2 0 307 0 322 s 7 8 STE110NS20FD Information furnished is believed to be accurate and reliable However STMicroelectronics assumes no responsibility for the con
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ST STE110NS20FD N CHANNEL 200V 0.022 110A ISOTOP MESH OVERLAY Power MOSFET handbook