ST BTA12 BW /CW BTB12 BW /CW handbook
Contents
1. 500 Item LL 100 Pt t ms 10 Cri 1 2 5 10 BTA12 BW CW BTB12 BW CW PACKAGE MECHANICAL DATA TO220AB Plastic REF DIMENSIONS Millimeters Inches Min Max Min Max 10 20 10 50 0 401 0 413 14 23 15 87 0 560 0 625 12 70 14 70 0 500 0 579 5 85 6 85 0 230 0 270 4 50 0 178 2 54 3 00 0 100 0 119 4 48 4 82 0 176 0 190 3 55 4 00 0 140 0 158 1 15 1 39 0 045 0 055 0 35 0 65 0 013 0 026 2 10 2 70 0 082 0 107 4 58 5 58 0 18 0 22 0 80 1 20 0 031 0 048 0 64 0 96 0 025 0 038 vlO Z E r ej zJo nolo w gt Cooling method C Marking type number Weight 2 3 g Recommended torque value 0 8 m N Maximum torque value 1 m N Information furnished is believed to be accurate and reliable However SGS THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use No license is granted by implication or otherwise under any patent or patent rights of SGS THOMSON Microelectronics Specifications mentioned in this publication are subject to change without notice This publication supersedes and replaces all information previously supplied SGS THOMSON Microelectronics products are not authorized for use as cr2. Relative variation of thermal impedance versus pulse duration Zth Rth 1 z i Zth j c 0 1 Zth j a t tp s 0 01 aan 1E 3 1E 2 164 1E 0 1E 1 1E 2 5E 2 Fig 7 Non Repetitive surge peak on state current versus number of cycles Itgm A 100 a Number of cycles o ae L 1 10 100 1000 Fig 9 On state characteristics maximum values It AY 1000 ET initial T 25 C m 100 10 He Tj max Tj max Vio 0 85V i Rt 0 0420 VTM V 0 1 o 1 2 3 4 5 8 4 5 F 68 HOMsoN Fig 6 Relative variation of gate trigger current and holding current versus junction temperature IgtI Til hT TolT250 hl T 26C 25 2 Igt 1 5 i PS 1 Ih x Fo 0 5 Tj C EEE A 40 30 20 10 9 10 20 39 40 59 50 70 80 90 190110120130 Fig 8 Non repetitive surge peak on state current for a sinusoidal pulse with width t lt 10ms and corresponding value of 12t IT gm fA It 4 s
3. cw BTA 12 400 X X Insulated 600 x x 700 X X 800 X X BTB 400 X X Uninsulated 600 x x 700 X X 800 X X Fig 1 Maximum RMS power dissipation versus RMS on state current F 50Hz Curves are cut off by dl dt c limitation Fig 2 Correlation between maximum RMS power dissipation and maximum allowable temperatures Tamb and Tcase for different thermal resistances heatsink contact BTA P w P W Tease C 16 16 85 Y Tae 14 14 FA Q 180 gt 4 C W 12 Qa 12 95 ar TI eren 10 10 Q 907 8 8 4 105 Q ed s 6 N 30 4 Q 30 4 115 2 2 Tamb C ltirms A o Pe o O 1 2 345 6 7 8 amp 9 10 11 12 Fig 3 Correlation between maximum RMS power dissipation and maximum allowable temperatures Tamb and Tcase for different thermal resistances heatsink contact BTB P W Tease C 16 z Rthe 0 caw gg 14 D 2 c w 4 ow 12 8 C W 10 105 8 6 115 4 2 Tamb C o 12 o 20 40 60 80 100 120 140 125 0O 20 40 60 80 100 120 140 Fig 4 RMS on state current versus case temperature IT RMs A 14 12 BTB 10 BTA Tease C 0 20 40 60 80 100 120 140 3 5 BTA12 BW CW BTB12 BW CW Fig 5
4. 0 0 BIARBWO OO SZA T SGS THOMSON MICROELECTRONICS BTA12 BW CW BTB12 BW CW SNUBBERLESS TRIACS FEATURES a HIGH COMMUTATION dl dt c gt 12A ms without snubber Ag A1 a HIGH SURGE CURRENT ITsm 120A Vpprm UP TO 800V s a BTA Family INSULATING VOLTAGE 2500V Rms UL RECOGNIZED E81734 DESCRIPTION At The BTA BTB12 BW CW triac family are high per A2 formance glass passivated chips technology The SNUBBERLESS concept offer suppression of RC network and it is suitable for application TO220AB such as phase control and static switching on in Plastic ductive or resistive load ABSOLUTE RATINGS limiting values Symbol Parameter Value Unit IT RMS RMS on state current BTA Te 85 C 12 A 360 conduction angle BTB Te 95 C ITSM Non repetitive surge peak on state current tp 8 3 ms 126 A Tj initial 25 C tp 10 ms 120 12t 12t value tp 10 ms 72 A2s di dt Critical rate of rise of on state current Repetitive 20 Alus Gate supply IG 500mMA diG dt 1A us F 50 Hz Non 100 Repetitive Tstg Storage and operating junction temperature range 40 to 150 C Tj 40 to 125 C Tl Maximum lead temperature for soldering during 10 s at 4 5 mm 260 C from case Symbol Parameter BTA BTB12 BW CW Unit 400 600 700 800 VDRM Repetitive peak off state voltage 400 600 700 800 Vv VRRM Tj 125 C 1 5 March 1995 BT
5. A12 BW CW BTB12 BW CW THERMAL RESISTANCES Symbol Parameter Value Unit Rth j a Junction to ambient 60 C W Rth j c DC Junction to case for DC BTA 3 3 C W BTB 2 7 Rth j c AC Junction to case for 360 conduction angle BTA 25 C W F 50 Hz BTB 2 0 GATE CHARACTERISTICS maximum values PG Av 1W__PGmM 10W tp 20 us IGM 4A tp 20 us VGM 16V tp 20 us ELECTRICAL CHARACTERISTICS Symbol Test Conditions Quadrant Suffix Unit BW cw IGT Vp 12V DC RL 33Q Tj 25 C 1 1 11 MIN 2 1 mA MAX 50 35 VGT Vp 12V DC RL 33Q Tj 25 C I III MAX 15 v vGD VD VDRM RL 3 3kQ Tj 125 C 1 11 11 MIN 0 2 v tgt VD VDRM IG 500mA Tj 25 C 1 1 11 TYP 2 us dig dt 3A us IL Ig 1 2 IGT Tj 25 C Ill TYP 40 A mA Il TYP 80 Ill MAX 50 ll MAX 80 IH IT 500mA gate open Tj 25 C MAX 50 35 mA Vim IrM 17A tp 380us Tj 25 C MAX 1 60 v IpRM VpRM_ Rated Tj 25 C MAX 0 01 mA IRAM SRAM ated Tj 125 C MAX 2 dv dt Linear slope up to Vp 67 VDRM Tj 125 C MIN 500 250 Vis gate open TYP 750 500 dl dt c Without snubber Tj 125 C MIN 12 6 5 Alms TYP 24 13 For either polarity of electrode A2 voltage with reference to electrode A1 2 5 BTA12 BW CW BTB12 BW CW ORDERING INFORMATION Package IT RMS VDRM VRRM Sensitivity Specification A v BW
6. itical components in life support devices or systems without express written approval of SGS THOMSON Microelectronics 1995 SGS THOMSON Microelectronics Printed in Italy All rights reserved SGS THOMSON Microelectronics GROUP OF COMPANIES Australia Brazil France Germany Hong Kong Italy Japan Korea Malaysia Malta Morocco The Nether lands Singapore Spain Sweden Switzerland Taiwan Thailand United Kingdom U S A 5 5 ATT SES THOMSON
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