ST BTA/BTB08 T8 Series handbook
Contents
1. 0 0 ky BTA BTBO8 and T8 Series SNUBBERLESS LOGIC LEVEL amp STANDARD 8A TRIACS MAIN FEATURES we DESCRIPTION Available either in through hole or surface mount packages the BTA BTBOS and T8 triac series is suitable for general purpose AC switching They can be used as an ON OFF function in applications such as static relays heating regulation induction motor starting circuits or for phase control operation in light dimmers motor Speed controllers The snubberless versions BTA BTB W and T8 series are specially recommended for use on inductive loads thanks to their high commutation performances By using an internal ceramic pad the BTA series provides voltage insulated tab rated at 2500V RMS complying with UL TO 220AB Insulated TO 220AB standards File ref E81734 BTAO8 BTBO8 ABSOLUTE MAXIMUM RATINGS Parameter RMS on state current full sine wave DPAK D PAK IPAK TO 220AB TO 220AB Ins Tc 100 C Non repetitive surge peak on state F 50 20 ms 80 A full cycle Tj initial 25 current full cycle Tj initia 5 C F 60Hz tz 167 ms Tc 110 Critical rate of rise of on state current 3 Ig 2xlgr tr lt 100 ns F 120 Hz Tj 125 C A us lem Peak gate current tp 20 us Tj 125 C PG AV Average gate power dissipation Tj 125 C 1 Storage junction temperature range 40 to 150 Tj Operating ju2. B2 1 25 1 40 pos 2 1 21 Das E 10 00 0 G 385 op 15 0 6 2 0 MIN L2 27 1 40 FLAT ZONE L3 E 175 Va n e x FOOTPRINT DIMENSIONS in millimeters D PAK Plastic 10 30 4 5 08 3 8 10 BTA BTBOS and T8 Series PACKAGE MECHANICAL DATA IPAK Plastic o pos e 7 o w D 048 er ae 55 _ 647 URNA 0 y 9 10 BTA BTBOS and T8 Series PACKAGE MECHANICAL DATA TO 220AB Ins DIMENSIONS 4 60 15 80 2 65 114 T7 1 14 I ols a OJ e Information furnished is believed to be accurate and reliable However STMicroelectronics assumes no responsibility for the consequences of use ofsuch information nor for any infringement of patents or other rights of third parties which may result from its use No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics Specifications mentioned in this publication are subject to change without notice This publication supersedes and replaces all information previously supplied STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics The ST logo is a r
3. E WT Wt xj x x x T810 xxxH T835 xxxB T835 xxxG T835 xxxH BTB non insulated TO 220AB package q 3 10 8 and T8 Series ORDERING INFORMATION BT A 08 600 BW TRIAC g 7 dl SERIES SENSITIVITY amp TYPE INSULATION B 50mA STANDARD A insulated VOLTAGE BW 50mA SNUBBERLESS B non insulated 600 600V C 25mA STANDARD 800 800V CW 35mA SNUBBERLESS CURRENT 8A SW 10mA LOGIC LEVEL TW 5mA LOGIC LEVEL T 8 10 600 TRAC 4 l 1 SERIES PACKAGE B DPAK CURRENT 8A VOLTAGE G D PAK 600 600V H IPAK 800 800V PACKING MODE Blank Tube TR D PAK SENSITIVITY Tape amp Reel 10 10mA 35 35mA OTHER INFORMATION BTA BTB08 xxxyz BTA BTBO8xxxyz 23g 250 T8yy xxxB T8yyxxx 0 3 g 75 75 50 T8yy xxxG TR T8yyxxx 1 5g 1000 amp Note voltage sensitivity 2 type T8yy xxxB TR T8yyxxx 0 3 g 2500 amp 4 10 J Fig 1 Maximum power dissipation versus RMS on state current full cycle P W IT RMS A Fig 2 2 RMS on state current versus ambient temperature printed circuit board FR4 copper thickness 35um full cycle IT RMS A 3 5 3 0 25 2 0 1 5 1 0 Tamb C 0 0 0 25 50 75 100 125 Fig 4 On state characteristics maximum values ITM A 100 6 X5 moe cus Tj ma
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5. ive variation of critical rate of decrease of main current versus junction temperature dl dt c Tj dl dt c Tj specified 0 25 50 75 100 125 6 10 Fig 7 Relative variation of gate trigger current holding current and latching current versus junction temperature typical values IGT IH IL Tj IGT IH IL Tj 25 C 2 5 0 0 40 20 0 20 40 60 80 100 120 140 Fig 8 2 Relative variation of critical rate of decrease of main current versus dV dt c typical values Standard Types dl dt c dV dt c Specified dl dt c 0 6 7 V s 0 4 5 1 1 0 10 0 100 0 Fig 10 DPAK and D PAK Thermal resistance junction to ambient versus copper surface under tab printed circuit board FR4 copper thickness 35 um Rth j a C W or BTA BTBOS and T8 Series PACKAGE MECHANICAL DATA DPAK Plastic 7097 099 0095 0043 0 009 064 050 0025 0035 52 0272 C 045 080 0077 0028 cz 048 050 0025 6 20 0 244 E 6 40 660 0251 0 259 018 H 050 09r T FOOTPRINT DIMENSIONS in millimeters DPAK Plastic 710 BTA BTBO8 and T8 Series PACKAGE MECHANICAL DATA D PAK Plastic 4 Mem woe Eee we A 4 30 4 60 0 181 249 259 0 A2 0 03 DEN 0 23 0 00 i
6. nction temperature range 40 to 125 September 2000 Ed 3 110 BTA BTBOS and T8 Series ELECTRICAL CHARACTERISTICS Tj 25 C unless otherwise specified SNUBBERLESS and LOGIC LEVEL 3 Quadrants Symbol Test Conditions Quadrant e 8 Por Tart ea eoa lt gt MC Vorm c a 2 Tj 125 C Iu 2 17 100 mA X 15 10 35 Ig 1 2 lar dl 25 50 10 25 50 70 Fw a _ dV dt 2 67 gate open tt 425 C 400 20 40 400 1000 V us di dtye Vidic 0 1 Vius Tj 125 C dV dt c 10 V us Tj 125 C Without snubber Tj 125 C STANDARD 4 5 Vp 12V 302 Vo Vorm 3 3 Tj 125 C 2 I 500 mA la 1 2 lar dV dt 2 Vp 67 gate open Tj 125 dV dt c 2 dl dt c 3 5 A ms Tj 125 C STATIC CHARACTERISTICS usd Test Conditions Ra Dynamic resistance resistance MAX Note 1 minimum IGT is guaranted at 596 of IGT max Note 2 for both polarities of A2 referenced to A1 3 2 10 BTA BTBOS and T8 Series THERMAL RESISTANCES Parameter Junction to case AC DPAK D PAK IPAK TO 220AB TO 220AB Insulated Junction to ambient 5 Copper surface under tab PRODUCT SELECTOR Voltage xxx Part Number Sensitivity Type Package NNNM CERCA ONE ER uses a seme wem
7. x Tj Tj max 5 i pe Vto 2 0 85 V E E Rd 250 10 VTM V 0 15 20 25 30 35 40 45 50 q BTA BTBOS and T8 Series Fig 2 1 RMS on state current versus case temperature full cycle IT RMS A BTB T8 Te C OOO 0 25 50 75 100 125 Fig 3 Relative variation of thermal impedance versus pulse duration K Zth Rth 1E 0 Zth j c E 5 1 1 DPAK IPAK 1E 1 a TO 220AB D Zth j a 1E 2 1E 2 1E 1 1E 0 1E 1 1E 2 5 2 Fig 5 Surge peak on state current versus number of cycles ITSM A Non repetitive 50 Tj initial 25 C 40 Repetitive 30 A eos Tc 100 C 20 T os 10 1 1 IIIN Number ofcyces 2 0 1 10 100 1000 5 10 8 and T8 Series Fig 6 Non repetitive surge peak on state current for a sinusoidal pulse with width tp 10ms and corresponding value of I t ITSM A t A s 1000 Tjinitial 26 C di dt limitation 100 tp ms 8 01 0 10 1 00 10 00 Fig 8 1 Relative variation of critical rate of decrease of main current versus dV dt c typical values Snubberless amp Logic Level Types dl dt c dV dt c Specified dl dt c o 0 2 57777 7 0 1 1 0 10 0 100 0 Fig 9 Relat
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ST BTA/BTB08 T8 Series handbook