ST BTA04 T/D/S/A BTB04 T/D/S/A handbook
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1. Zth Rth 1 r 7 t t ia 0 1 Zth j a tp s 0 01 ian 1E 3 1E 2 1E 1 1E 0 1E 1 1E 2 5E 2 Fig 7 Non Repetitive surge peak on state current versus number of cycles Tam A Number of cycles o ee 1 10 100 1000 Fig 9 On state characteristics maximum values lr A 100 10 E A Ti imax Timax 3 Vito 1 3V 4 i Rt 0 0652 f i Vm V 1 2 3 4 5 4 5 F 68 HoMsoN Fig 6 Relative variation of gate trigger current and holding current versus junction temperature IgtI Til IhiTj IgtlTi 26 C Ih Tj 26C 25 olN lgt 18 a 3 1 Ih ee a So 05 Tj C ic 40 30 20 10 0 10 20 30 40 60 60 70 80 90 100110 Fig 8 Non repetitive surge peak on state current for a sinusoidal pulse with width t lt 10ms and corresponding value of 12t IT gm A It 4 s 200 Tj initial 25 C 199 tsm 10 4 t ms vr 1 2 5 10 BTA04 T D S A BTB04 T D S A PACKAGE MECHANICAL DATA TO220AB2. THERMAL RESISTANCES Symbol Parameter Value Unit Rth j a Junction to ambient 60 C W Rth j c DC Junction to case for DC BTA 44 C W BTB 3 2 Rth j c AC Junction to case for 360 conduction angle BTA 3 3 C W F 50 Hz BTB 2 4 GATE CHARACTERISTICS maximum values PG AV 1W Pam 40W tp 20us IGM 4A tp 20us Vam 16V tp 20 us ELECTRICAL CHARACTERISTICS Symbol Test Conditions Quadrant Suffix Unit T D S A IGT Vp 12V DC RL 332 Tj 25 C 1 1 11 MAX 5 5 10 10 mA IV MAX 5 10 10 25 VGT Vp 12V DC RL 332 Tj 25 C LI II IV MAX 15 v Vep VD VpRM RL 3 3k2 Ti 110 C i m iV MIN 0 2 v tgt VD VDRM_ Iq 40mA Tj 25 C I IV TYP 2 us dig dt 0 5A us IL IG 1 2 IGT Tj 25 C I II IV TYP 10 10 20 20 mA I 20 20 40 40 IH IT 100mA gate open Tj 25 C MAX 15 15 25 25 mA Vim ITM 5 5A tp 380us Tj 25 C MAX 1 65 v IDRM VDRM Rated Tj 25 C MAX 0 01 mA RRM MRM Halad Tj 110 C MAX 0 75 dV dt Linear slope up to Tj 110 C TYP 10 10 V us VD 67 VDRM gate open MIN t 10 10 dV dt c di dt c 1 8A ms Tj 110 C TYP 1 1 5 5 Vas For either polarity of electrode A2 voltage with reference to electrode A1 2 5 BTA04 T D S A BTB04 T D S A ORDERING INFORMATION Package IT RMS VDRM VRRM Sensitivity Specification A v T D S A BTA 4 400 X X X X Insulated 600 X X X X 700 X X X X BTB 400
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4. X X X X Uninsulated 600 X X X X 700 X X X X Fig 1 Maximum RMS power dissipation versus RMS on state current F 50Hz Curves are cut off by dl dt c limitation Fig 2 Correlation between maximum RMS power dissipation and maximum allowable temperatures Tamb and Tcase for different thermal resistances heatsink contact BTA P w P w Tease C 6 6 180 Rthe 0 c w a at sow sF 4N T Q 180 R 10 C W ae 5 C W ab a 120 gt 4 A 90 3 g T 3 100 Q sg a 2 30 2 ie 105 1 1 o Tamb C l tirms A h f o 110 1 15 2 25 3 35 4 O 20 40 60 86 100 120 140 Fig 3 Correlation between maximum RMS power dissipation and maximum allowable temperatures Tamb and Tcase for different thermal resistances heatsink contact BTB P W Tease C 6 4 100 3 a 2 105 1 o Tamb C e l 110 0 20 40 60 80 100 120 140 Fig 4 RMS on state current versus case temperature Tiams A BIB 4 BTA 180 Tease C o 0 10 20 30 40 50 60 70 80 90 100110120 3 5 BTA04 T D S A BTB04 T D S A Fig 5 Relative variation of thermal impedance versus pulse duration
5. 00 BIAOCAD OO BTA04 T D S A ELECTRONICS BTB04 T D S A FEATURES a VERY LOW let 10mA max LOW IH 15mA max ne a a BTA Family a INSULATING VOLTAGE 2500V RMS UL RECOGNIZED E81734 DESCRIPTION Ni The BTA BTB04 T D S A triac family are high per A2 formance glass passivated PNPN devices These parts are suitables for general purpose ap plications where gate high sensitivity is required TO220AB Application on 4Q such as phase control and static Plastic switching ABSOLUTE RATINGS limiting values Symbol Parameter Value Unit IT RMS RMS on state current BTA Te 90 C 4 A 360 conduction angle BTB Te 95 C ITSM Non repetitive surge peak on state current tp 8 3 ms 42 A Tj initial 25 C tp 10 ms 40 12t 12t value tp 10 ms 8 A2s di dt Critical rate of rise of on state current Repetitive 10 Alus Gate supply IG 50mMA diG dt 0 1A us F 50 Hz Non 50 Repetitive Tstg Storage and operating junction temperature range 40 to 150 C Tj 40 to 110 C TI Maximum lead temperature for soldering during 10 s at 4 5 mm 260 C from case Symbol Parameter BTA BTB04 Unit 400 T D S A 600 T D S A 700 T D S A VDRM Repetitive peak off state voltage 400 600 700 Vv VRRM Tj 110 C 1 5 March 1995 BTA04 T D S A BTB04 T D S A
6. Plastic REF DIMENSIONS Millimeters Inches H Min Max Min Max EK A 10 20 10 50 0 401 0 413 m B 14 23 15 87 0 560 0 625 gt c 12 70 14 70 0 500 0 579 B D 5 85 6 85 0 230 0 270 F 4 50 0 178 G 2 54 3 00 0 100 0 119 H 4 48 4 82 0 176 0 190 1 3 55 4 00 0 140 0 158 c t J 1 15 1 39 0 045 0 055 L 0 35 0 65 0 013 0 026 H M 2 10 2 70 0 082 0 107 p N 4 58 5 58 0 18 0 22 o 0 80 1 20 0 031 0 048 P 0 64 0 96 0 025 0 038 Cooling method C Marking type number Weight 2 3 g Recommended torque value 0 8 m N Maximum torque value 1 m N Information furnished is believed to be accurate and reliable However SGS THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use No license is granted by implication or otherwise under any patent or patent rights of SGS THOMSON Microelectronics Specifications mentioned in this publication are subject to change without notice This publication supersedes and replaces all information previously supplied SGS THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS THOMSON Microelectronics 1995 SGS THOMSON Microelectronics All rights reserved
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ST BTA04 T/D/S/A BTB04 T/D/S/A handbook