NEC NE678M04 handbook
Contents
1. GAIN BANDWIDTH PRODUCT INSERTION POWER GAIN vs COLLECTOR CURRENT MAG MSG vs FREQUENCY 15 ma 35 5 m VcES3V m 0 lt lc 30 mA lt 30 2 MSG t amp SEI 25 gt MAG S 10 aos D 5 885 20 z RES 5 Spo 15 5 PIS 520 10 E S2tel 0 gt 0 1 10 100 0 1 1 10 Collector Current Ic mA Frequency f mA INSERTION POWER GAIN INSERTION POWER GAIN MAG MSG vs COLLECTOR CURRENT MAG MSG vs COLLECTOR CURRENT a a 25 25 Sm 3V f22GHz 20 MSG 15 MAG Insertion Power Gain 21 dB Maximum Available Power Gain MAG Maximum Stable Power Gain MSG Maximum Stable Power Gain MSG dB Insertion Power Gain S21e dB Maximum Available Power Gain MAG dB 1 10 100 1 10 100 Collector Current 1 mA Collector Current Ic mA INSERTION POWER GAIN NOISE FIGURE ASSOCIATED GAIN MAG vs COLLECTOR CURRENT vs COLLECTOR CURRENT 25 8 16 3V 3 V f 2 5 GHz toe Giz n2 e 15 MAG e Noise Figure NF dB Associated Gain Ga dB Insertion Power Gain 21 dB Maximum Available Power Gain MAG dB2. e 1 10 100 1 10 100 Collector Current Ic mA Collector Current Ic mA NE678M04 TYPICAL PERFORMANCE CURVES 25 OUTPUT POWER POWER GAIN COLLECTOR CURRENT COLLECTOR EFFICIENCY vs INPUT POWER 25 ce za2V 250 f 0 9 GHz 10 mA RF OFF 3 20 200 zd 88 Eg sa 2 28 15 T 150 5 59 o g 10 100 5 gt 52 Ic 58 202 959 2 e Sg 5 ne 50 Q 0 0 10 5 0 5 10 15 Input Power Pin dBm OUTPUT POWER POWER GAIN OUTPUT POWER POWER GAIN COLLECTOR CURRENT COLLECTOR COLLECTOR CURRENT COLLECTOR EFFICIENCY vs INPUT POWER EFFICIENCY vs INPUT POWER 25 VcE 28V E Vcr 3 2 V 250 f 1 8 GHz f 1 8 GHz lea 10 mA RF OFF 25 lcg 10 RFOFF Eg _ 20 200 28 g 2 200 55 Eg 28 2 gt 2 15 150 g 8 2 O15 150 LE o LE GP dg OO 80 oi 59 C 10 100 5 gt 10 100 58 35 gc Bc nc 88 3 5 50 5 50 Ic 0 0 0 0 10 15 10 5 0 5 10 15 Input Power Pin dBm Input Power Pin dBm OUTPUT POWER POWER GAIN COLLECTOR CURRENT COLLECTOR EFFICIENCY vs INPUT POWER 25 250 Vce 3 2 V f 2 4 GHz 25 lcg 10 mA RF OFF E m 29 E 8 25 227 us E SE 5 10 160 5 o 5z 5 8 ke O 5 50 889 0 0 10 5 0 5
3. be expected to result in personal injury The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF MICROWAVE amp OPTOELECTRONIC SEMICONDUCTORS Wi EASTERN LABORATORIES Headquarters 4590 Patrick Henry Drive Santa Clara CA 95054 1817 408 988 3500 Telex 34 6393 FAX 408 988 0279 DATA SUBJECT TO CHANGE WITHOUT NOTICE Internet http WWW CEL COM 02 07 2002
4. 0 18 16 66 0 50 171 39 1 03 7 59 5 000 0 67 78 45 1 15 23 86 0 19 10 92 0 53 179 62 0 98 7 69 5 500 0 69 68 99 1 02 33 79 0 21 4 77 0 57 170 14 0 94 6 86 6 000 0 71 59 90 0 92 43 00 0 23 1 43 0 60 160 66 0 92 6 09 Note 1 Gain Calculations MAG 25211 J K 1 Js When K 2 1 MAG is undefined and MSG values are used MSG 1512 MAG Maximum Available Gain MSG Maximum Stable Gain S12 2 S12 21 21 A JS S22 A S1 S22 21 12 12 NE678M04 TYPICAL SCATTERING PARAMETERS 25 NE678M04 Vc 3 V Ic 30 mA FREQUENCY S11 S21 S12 S22 K MAG GHz MAG ANG MAG ANG MAG ANG MAG ANG dB 0 100 0 52 74 30 39 85 141 89 0 02 63 14 0 79 43 24 0 22 33 48 0 200 0 55 114 70 28 29 120 64 0 03 50 10 0 58 69 59 0 37 30 30 0 300 0 56 136 33 20 98 108 33 0 03 45 90 0 46 86 51 0 49 28 27 0 400 0 56 149 34 16 42 100 26 0 03 45 26 0 40 97 94 0 61 26 78 0 500 0 56 158 35 13 45 94 25 0 04 45 86 0 36 106 44 0 69 25 46 0 600 0 56 167 02 11 22 90 08 0 04 47 13 0 30 115 48 0 83 24 40 0 700 0 57 172 39 9 70 85 86 0 04 48 18 0 28 121 83 0 88 23 43 0 800 0 57 176 68 8 57 82 27 0 05 49 01 0 27 125 22 0 92 22 51 0 900 0 57 179 14 7 66 78 87 0 05 49 82 0 27 128 89 0 96 21 72 1 000 0 57 176 07 6 93 75 71 0 06 50 22 0 26 131 89 0 98 20 95 1 500 0 57 161 30 4 70 61 65 0 08 49 69 0 27 142 80 1 07 16 35 1 800 0 57 153 82 3 96 53 96 0 09 48 26 0
5. 11 98 88 17 0 04 54 92 0 26 123 64 0 94 25 20 0 700 0 56 177 75 10 33 84 28 0 04 55 88 0 25 129 49 0 98 24 08 0 800 0 56 178 53 9 12 80 93 0 04 56 52 0 25 132 28 1 00 22 69 0 900 0 56 174 86 8 14 77 76 0 05 56 38 0 24 135 41 1 02 21 26 1 000 0 56 172 16 7 36 74 77 0 05 57 10 0 24 138 20 1 04 20 18 1 500 0 56 158 57 4 98 61 30 0 08 55 00 0 25 147 24 1 08 16 43 1 800 0 55 151 40 4 19 53 86 0 09 52 53 0 26 150 84 1 09 14 89 1 900 0 55 148 96 3 98 51 41 0 09 51 60 0 26 151 75 1 09 14 44 2 000 0 55 146 64 3 79 49 00 0 10 50 56 0 27 152 82 1 09 14 02 2 500 0 55 134 28 3 07 37 07 0 12 44 90 0 29 157 03 1 09 12 29 3 000 0 56 121 53 2 58 25 46 0 14 38 56 0 32 161 31 1 07 10 96 3 500 0 57 108 26 2 22 14 13 0 16 32 10 0 36 165 52 1 06 9 97 4 000 0 58 95 62 1 95 3 18 0 18 25 40 0 39 170 85 1 03 9 29 4 500 0 60 84 34 1 73 7 49 0 20 18 42 0 42 177 21 1 01 9 02 5 000 0 62 74 53 1 55 17 79 0 21 11 57 0 45 175 01 0 98 8 67 5 500 0 64 65 76 1 40 27 80 0 22 4 84 0 48 166 70 0 96 7 95 6 000 0 65 57 22 1 27 37 47 0 24 1 99 0 51 158 43 0 94 7 29 Note 1 Gain Calculations MAG E K K 1 When gt 1 MAG is undefined and MSG values are used MSG JL 21 ALS EU 522 4 S11 S22 S21 812 12 12 12 S21 MAG Maximum Available Gain MSG Maximum Stable Gain Life Support Applications These NEC products are not intended for use in life support devices appliances or systems where the malfunction of these products can reasonably
6. 7 dBm GL Linear Gain at 2 8 V 10 mA f 1 8 GHz Pin 5 dBm dB 13 0 n MAG Maximum Available Gain at 3 V Ic 30 mA f 2 GHz dBm 13 5 c S21E 2 Insertion Power Gain at 3 V Ic 30 mA f 2 GHz dB 8 0 10 5 Collector Efficiency at VcE 2 8 V Ica 10 mA f 1 8 GHz 55 Pin 7 dBm NF Noise Figure at 3 V Ic 7 mA f 2 GHz Zs Zopt dB 1 7 2 5 fr Gain Bandwidth at 3 V Ic 30 mA f 2 GHz GHz 12 0 Cre Reverse Transfer Capacitance at Vcs 3 V 0 f 1 MHz pF 0 42 0 7 Notes 1 Pulsed measurement pulse width 350 us duty cycle lt 2 2 Collector to Base capacitance measured by capacitance meter automatic balance bridge method when emitter pin is connected to the guard pin of capacitance meter 3 Electronic Industrail Association of Japan 4 MAG 49 k ex K 1 1512 California Eastern Laboratories NE678M04 ABSOLUTE MAXIMUM RATINGS 25 ORDERING INFORMATION SYMBOLS PARAMETERS UNITS RATINGS PART NUMBER QUANTITY VCBO Collector to Base Voltage V 9 0 NE678M04 T2 3k pcs reel VCEO Collector to Emitter Voltage V 6 0 VEBO Emitter to Base Voltage V 2 0 lc Collector Current mA 100 PT Total Power Dissipation mW 205 THERMAL RESISTANCE Junction Temperature C 150 SYMBOLS PARAMETERS UNITS RATINGS Rth Thermal Resistance from C W 600 TS
7. 10 15 Input Power Pin dBm Collector Current Ic mA Collector Efficiency nc 96 NE678M04 TYPICAL SCATTERING PARAMETERS 25 C NE678M04 Vc 2 V 10 FREQUENCY 11 S21 S12 S22 K MAG GHz MAG ANG MAG ANG MAG ANG MAG ANG dB 0 100 0 72 45 97 23 42 152 40 0 02 65 62 0 90 29 51 0 10 29 97 0 200 0 68 81 43 19 17 132 28 0 04 52 02 0 74 51 31 0 18 26 71 0 300 0 65 106 66 15 41 118 19 0 05 42 17 0 61 66 86 0 26 24 93 0 400 0 63 124 06 12 56 108 21 0 05 37 11 0 52 77 84 0 34 23 61 0 500 0 62 136 69 10 53 100 63 0 06 33 66 0 46 86 27 0 42 22 62 0 600 0 60 148 20 8 85 94 98 0 06 32 53 0 38 92 24 0 56 21 75 0 700 0 60 155 78 7 72 89 80 0 06 31 81 0 36 98 70 0 62 21 00 0 800 0 60 161 77 6 86 85 45 0 06 31 70 0 34 102 52 0 68 20 32 0 900 0 60 167 38 6 15 81 38 0 07 31 29 0 33 106 64 0 74 19 72 1 000 0 60 171 69 5 59 77 66 0 07 31 31 0 32 110 16 0 79 19 17 1 500 0 59 170 30 3 81 61 44 0 08 33 17 0 31 123 84 1 00 16 81 1 800 0 59 161 69 3 21 52 84 0 09 33 52 0 32 130 08 1 07 13 98 1 900 0 59 158 90 3 05 50 05 0 09 33 69 0 32 131 91 1 10 13 41 2 000 0 59 156 19 2 90 47 32 0 09 33 45 0 33 133 96 1 11 12 93 2 500 0 59 142 62 2 35 33 99 0 11 32 55 0 36 142 01 1 14 11 02 3 000 0 60 128 82 1 97 21 32 0 13 29 86 0 39 149 47 1 15 9 63 3 500 0 61 114 69 1 69 9 12 0 14 26 40 0 43 156 17 1 12 8 62 4 000 0 63 101 16 1 47 2 44 0 16 21 89 0 47 163 41 1 07 7 95 4 500 0 65 89 04 1 29 13 44
8. 27 147 21 1 09 14 70 1 900 0 57 151 23 3 76 51 43 0 09 47 59 0 28 148 33 1 09 14 25 2 000 0 57 148 83 3 58 48 96 0 10 46 86 0 28 149 67 1 09 13 81 2 500 0 57 136 19 2 90 36 74 0 12 42 26 0 31 154 80 1 09 12 03 3 000 0 57 123 25 2 44 24 91 0 14 36 84 0 34 159 87 1 08 10 71 3 500 0 58 109 78 2 10 13 41 0 16 30 78 0 37 164 45 1 06 9 71 4 000 0 60 96 93 1 84 2 30 0 18 24 27 0 40 170 06 1 04 9 03 4 500 0 62 85 43 1 63 8 43 0 19 17 67 0 43 176 72 1 01 8 78 5 000 0 64 75 45 1 46 18 79 0 21 11 05 0 47 175 39 0 98 8 46 5 500 0 65 66 54 1 32 28 80 0 22 4 47 0 50 166 91 0 95 7 72 6 000 0 67 57 90 1 19 38 45 0 24 2 21 0 53 158 44 0 93 7 05 Note 1 Gain Calculations MAG 1821 k K 1 When gt 1 MAG is undefined and MSG values are used MSG 2211 1 1412 1511 2 522 2 A S11 S22 S21 S12 512 1512 2 81221 MAG Maximum Available Gain MSG Maximum Stable Gain NE678M04 TYPICAL SCATTERING PARAMETERS 25 SAC a 10 20 8040 NE678M04 Vc 5 V 70 mA FREQUENCY S11 S21 S12 S22 K MAG GHz MAG ANG MAG ANG MAG ANG MAG ANG dB 0 100 0 46 92 27 47 62 136 35 0 01 61 08 0 69 50 06 0 35 35 14 0 200 0 51 129 65 31 64 115 69 0 02 51 85 0 49 77 41 0 51 31 73 0 300 0 53 147 72 22 84 104 50 0 03 50 27 0 39 94 24 0 65 29 60 0 400 0 54 158 40 17 67 97 25 0 03 51 38 0 34 105 50 0 76 27 89 0 500 0 55 165 77 14 38 91 83 0 03 53 36 0 31 113 55 0 84 26 43 0 600 0 55 173 25
9. O0 0 NE6 8M OT O N EC MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR NE678M04 FEATURES HIGH GAIN BANDWIDTH fT 12 GHz HIGH OUTPUT POWER 1 18 dBm at 1 8 GHz e HIGH LINEAR GAIN Go GL 13 dB at 1 8 GHz 39 2 05 0 1 NEW LOW PROFILE M04 PACKAGE SOT 343 footprint with a height of only 0 59 mm Flat lead style for better RF performance DESCRIPTION The NE678M04 is fabricated using NEC s HFT3 wafer pro cess With a transition frequency of 12 GHz the NE678M04 is usable in applications from 100 MHz to 3 GHz The NE678M04 0 01 leads 1 3 and 4 05 2 0 0 1 provides P1dB of 18 dBm even with low voltage and low 0 30 o ps current making this device an excellent choice for the driver 9 stage for mobile or fixed wireless applications NA 5 S The NE678M04 is housed in NEC s new low profile flat lead style M04 package PIN CONNECTIONS 3 1 Emitter 2 Collector ELECTRICAL CHARACTERISTICS 25 ij PART NUMBER NE678M04 PACKAGE OUTLINE M04 EIAJ REGISTRATION NUMBER 28C5753 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX ICBO Collector Cutoff Current at Vcs 5V IE 0 nA 100 a IEBO Emitter Cutoff Current at VEB 1 V 0 nA 100 hFE DC Current Gain at VcE 3 V Ic 30 mA 75 120 150 P1dB Output Power at 1 dB compression point at Vce 2 8 V Ica 10 mA dBm 18 0 f 1 8 GHz Pin
10. TG Storage Temperature C 65 to 150 Junction to Ambient Note Note 1 Operation in excess of any one of these parameters may result in permanent damage 2 Mounted on a 1 08cm x 1 0 mm thick glass epoxy PCB 1 Mounted on a 1 08cm x 1 0 mm thick glass epoxy PCB TYPICAL PERFORMANCE CURVES 25 TOTAL POWER DISSIPATION REVERSE TRANSFER CAPACITANCE vs AMBIENT TEMPERATURE vs COLLECTOR TO BASE VOLTAGE 300 _ 10 m Mounted on Glass Epoxy PCB r i f 1 2 1 08 cm x 1 0 mm t Ed 0 9 E E 8 D 205 c 0 7 S 200 5 o H S 0 6 g 150 05 a 5 04 2 100 5 03 E S 650 02 e o 0 25 50 75 100 125 150 0 1 2 3 4 5 6 Ambient Temperature TA Collector to Base Voltage V COLLECTOR CURRENT DC CURRENT GAIN vs COLLECTOR TO EMITTER VOLTAGE vs COLLECTOR CURRENT 100 1000 VcE 23V 90 80 m o 70 60 5 8 50 5 100 5 40 5 o o 2 30 a o 20 10 10 0 0 1 1 10 100 Collector to Emitter Voltage Vce V Collector Current Ic mA NE678M04 TYPICAL PERFORMANCE CURVES 25 0
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NEC NE678M04 handbook