NEC NE6510379A handbook
Contents
1. devices is Standard unless otherwise specified in NEC s Data Sheets or Data Books If customers intend to use NEC devices for applications other than those specified for Standard quality grade they should contact an NEC sales representative in advance Anti radioactive design is not implemented in this product M4 96 52. 0 0 NE6510372A PRELIMINARY DATA SHEET NEC N CHANNEL GaAs HJ FET NE6510379A 3W L BAND POWER GaAs HJ FET DESCRIPTION The NE6510379A is a 3 W GaAs HJ FET designed for middle power transmitter applications for mobile communication systems It is capable of delivering 3 watt of output power 1 3 Duty pulse operation with high linear gain high efficiency and excellent distortion Reliability and performance uniformity are assured by NEC s stringent quality and control procedures FEATURES GaAs HJ FET Structure High Output Power 35 dBm typ Vps 3 5 V Ipse 200 mA f 900 MHz Pin 24 dBm 1 3 duty Po 32 5 dBm typ Vps 3 5 V Ipse 200 mA f 1 9 GHz Pin 26 dBm 1 3 duty High Linear Gain GL 13 dB typ Vps 3 5 V Ipse 200 mA f 900 MHz Pin 0 dBm 1 3 duty 8 dB typ Vps 3 5 V Ipse 200 mA f 1 9 GHz Pin 0 dBm 1 3 duty High Power Added Efficiency 58 typ Vps 3 5 V Ipse 200 mA f 900 MHz Pin 24 dBm 1 3 duty 52 typ Q Vps 3 5 V Ipse 200 mA f 1 9 GHz Pin 26 dBm 1 3 duty ORDERING INFORMATION PLAN NESSIOSTOATI Em Remark To order evaluation samples please contact your local NEC sales office Part number for sample order NE6510379A ABSOLUTE MAXIMUM RATINGS Ta 25 Operation in excess of any one of these parameters may result in permanent damage Iesv ve s v meom Je o e Caution Please hand
3. 67 0 0 842 162 1 Preliminary Data Sheet 3 NEC NE6510379A APPLICATION CIRCUIT EXAMPLE 9 GHz Unit mm Tantalum Condenser 2 100p Tantalum Condenser 5 31 ecw IRACBLCS m zd ar Y f z C6 2 GND Fd C7 8 Substrate Teflon glass er 2 6 00pF C8 8 9 3 4 Preliminary Data Sheet NEC NE6510379A 79A Package Dimensions Unit mm 4 2 max Source 5 7 max 4 4 max 1 0 max 2 max genes 3 6 0 2 Bottom View 79A Package Recommended P C B Layout Unit mm 4 0 1 7 Stop up the hole with a rosin or something to avoid solder flow i O Drain Gate n a 2 e EE EM OO SEE 2 o O OO Source Y i i through hole 0 2 x 33 05 05 Preliminary Data Sheet 5 NEC NE6510379A RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions For soldering methods and conditions other than those recommended below contact your NEC sales representative Recommended Idering Meth Ideri iti Soldering Method Soldering Conditions Condition Symbol Infrared Reflow Package peak temperature 235 C or below IR35 00 2 Time 30 seconds or less at 210 C Count 2 Exposure limit None Partial Heating P
4. ation has been making continuous effort to enhance the reliability of its semiconductor devices the possibility of defects cannot be eliminated entirely To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device customers must incorporate sufficient safety measures in its design such as redundancy fire containment and anti failure features NEC devices are classified into the following three quality grades Standard Special and Specific The Specific quality grade applies only to devices developed based on a customer designated quality assurance program for a specific application The recommended applications of a device depend on its quality grade as indicated below Customers must check the quality grade of each device before using it in a particular application Standard Computers office equipment communications equipment test and measurement equipment audio and visual equipment home electronic appliances machine tools personal electronic equipment and industrial robots Special Transportation equipment automobiles trains ships etc traffic control systems anti disaster systems anti crime systems safety equipment and medical equipment not specifically designed for life support Specific Aircrafts aerospace equipment submersible repeaters nuclear reactor control systems life support systems or medical equipment for life support etc The quality grade of NEC
5. in temperature 260 C Time 5 seconds or less per pin row Note Exposure limit None Note After opening the dry pack keep it in a place below 25 C and 6596 RH for the allowable storage period Caution Do not use different soldering methods together except for partial heating 6 Preliminary Data Sheet NEC NE6510379A MEMO Preliminary Data Sheet 7 NEC NE6510379A Caution The Great Care must be taken in dealing with the devices in this guide The reason is that the material of the devices is GaAs Gallium Arsenide which is designated as harmful substance according to the law concerned Keep the law concerned and so on especially in case of removal The application circuits and their parameters are for reference only and are not intended for use in actual design ins No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation NEC Corporation assumes no responsibility for any errors which may appear in this document NEC Corporation does not assume any liability for infringement of patents copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device No license either express implied or otherwise is granted under any patents copyrights or other intellectual property rights of NEC Corporation or others While NEC Corpor
6. le this device at static free workstation because this is an electrostatic sensitive device The information in this document is subject to change without notice Document No 13677 1 00500 1st edition Date Published August 1998 N CP K NEC Corporation 1998 Printed in Japan NEC RECOMMENDED OPERATING LIMITS Characteristics Drain to Source Voltage Test Conditions Operating Duty Cycle Pulse width 0 577 ms Gain Compression Channel Temperature ELECTRICAL CHARACTERISTICS Ta 25 C Unless otherwise specified using NEC standard test fixture All RF characteristics is measured at 1 3 duty pulse operation pulse width 0 577 ms at 4 616 ms frame Characteristics Saturated Drain Current Test Conditions Vos 2 5 V Ves 0V Pinch off Voltage Vos 2 5 V Ip 21 mA Gate to Drain Break Down Voltage 21 mA Thermal Resistance Channel to Case Output Power Drain Current Power Added Efficiency Note 1 Linear Gain Notes 1 Pin 0 dBm f 1 9 GHz Vos 3 5 V Pin 26 dBm Rg 100 Q Ipse 200 mA RF OFF Note 2 NE6510379A 2 DC performance is 100 testing RF performance is testing several samples per wafer Wafer rejection criteria for standard devices is 1 reject for several samples TYPICAL RF PERFORMANCE FOR REFERENCE NOT SPECIFIED Ta 25 C Unless otherwise specified
7. using NEC standard test fixture All RF characteristics is measured at 1 3 duty pulse operation pulse width 0 577 ms at 4 616 ms frame Characteristics Output Power Drain Current Power Added Efficiency Note Linear Gain Note Pin 0 dBm Test Conditions f 900 MHz Vos 3 5 V Pin 24 dBm Rg 100 Q Ipse 200 mA RF OFF Preliminary Data Sheet NEC NE6510379A NE6510379A S PARAMETERS TEST CONDITIONS Vos 3 5 V Ipset 200 mA Preliminary Data Su S21 S12 S22 freq MHz MAG ANG deg MAG ANG deg MAG ANG deg MAG ANG deg 600 0 958 178 7 1 601 91 9 0 017 23 4 0 848 177 8 700 0 956 178 1 1 374 91 8 0 017 26 2 0 847 176 6 800 0 954 177 1 1 210 90 7 0 017 29 7 0 845 176 1 900 0 956 176 0 1 087 90 8 0 017 33 6 0 846 175 8 1000 0 953 175 3 0 966 89 9 0 018 36 6 0 847 174 6 1100 0 952 174 4 0 869 89 7 0 018 41 0 0 848 173 8 1200 0 951 173 9 0 818 89 5 0 018 43 9 0 849 172 9 1300 0 949 173 2 0 747 88 9 0 019 45 9 0 848 172 1 1400 0 949 172 2 0 694 89 7 0 020 47 4 0 846 171 8 1500 0 952 170 6 0 656 90 0 0 020 50 2 0 846 170 4 1600 0 954 169 4 0 625 88 9 0 020 53 1 0 844 169 6 1700 0 945 168 3 0 584 90 7 0 021 56 1 0 844 168 5 1800 0 947 166 9 0 595 89 0 0 022 57 9 0 844 167 4 1900 0 949 165 0 0 570 86 1 0 022 60 3 0 846 166 1 2000 0 946 163 5 0 515 86 3 0 022 61 6 0 846 164 9 2100 0 947 161 2 0 505 852 0 022 64 2 0 846 163 7 2200 0 949 160 1 0 479 92 7 0 023
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NEC NE6510379A handbook