Hittite HMC326MS8G handbook
Contents
1. z A lt H nO op or LL zj A lt eaMittite HMC326MS8G MICROWAVE CORPORATION GaAs InGaP HBT MMIC DRIVER AMPLIFIER 3 0 4 5 GHz Input Return Loss vs Temperature Output Return Loss vs Temperature 0 INPUT RETURN LOSS dB OUTPUT RETURN LOSS dB 3 3 25 3 5 3 75 4 4 25 4 5 3 3 25 3 5 3 75 4 4 25 4 5 FREQUENCY GHz FREQUENCY GHz Reverse Isolation vs Temperature Noise Figure vs Temperature 0 10 20 30 REVERSE ISOLATION dB NOISE FIGURE dB 3 3 25 3 5 3 75 4 4 25 4 5 3 3 25 3 5 3 75 4 4 25 4 5 FREQUENCY GHz FREQUENCY GHz Gain Power amp Quiescent Supply Current vs Vpd 3 5 GHz 150 GAIN dB P1dB dBm Psat dBm N D yw o9 Vpd Vdc For price delivery and to place orders please contact Hittite Microwave Corporation 12 Elizabeth Drive Chelmsford MA 01824 Phone 978 250 3343 Fax 978 250 3373 Order Online at www hittite com etittite HMC326MS8G MICROWAVE CORPORATION GaAs InGaP HBT MMIC DRIVER AMPLIFIER 3 0 4 5 GHz Absolute Maximum Ratings 5 5 Vde 5 5 Vde 20 dBm 150 C 0 747 W 87 C W 65 to 150 C 40 to 85 C Outline Drawing H U U or l L Oo lt 200 5 08 050 1 27 184 4 68 040 1 EXPOSED GROUND PADDLE MUST BE CONNECTED TO RF DC GROUND LOT NUMBER 037 338 a 028 0 752. 1 PACKAGE BODY MATERIAL LOW STRESS INJECTION MOLDED a Eee 65 epee ite 8 8 PLASTIC SILICA AND SILICON IMPREGNATED LEADFRAME MATERIAL COPPER ALLOY 015 838 009 838 060 1 52 050 1 27 2 3 LEADFRAME PLATING Sn Pb SOLDER 4 DIMENSIONS ARE IN INCHES MILLIMETERS A DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0 15mm PER SIDE A DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0 25mm PER SIDE 7 ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND For price delivery and to place orders please contact Hittite Microwave Corporation 12 Elizabeth Drive Chelmsford MA 01824 Phone 978 250 3343 Fax 978 250 3373 Order Online at www hittite com Estittite HMC326MS8G MICROWAVE CORPORATION GaAs InGaP HBT MMIC DRIVER AMPLIFIER 3 0 4 5 GHz Evaluation PCB o I o X E Z Ly Ji J2 LL A z ittite List of Material The circuit board used in the final application should use RF circuit design techniques Signal lines should have 50 ohm J1 J2 PC Mount SMA RF Connector impedance while the package ground leads and exposed J3 2mm DC Header paddle should be connected directly to the ground plane similar to that shown A sufficient number of VIA holes C1 C2 330 pF Capacitor 0603 Pkg should be used to connect the top and bottom ground C3 0 7 pF Capacitor 0603 Pkg planes The evaluation board should be mounted to an appropriate hea
3. ession P1dB 21 23 5 dBm Saturated Output Power Psat 26 dBm Output Third Order Intercept IP3 32 36 dBm Noise Figure 5 dB Supply Current Icc Vpd OV 5V 0 001 130 mA Control Current Ipd 7 mA Switching Speed tOn tOff 10 ns For price delivery and to place orders please contact Hittite Microwave Corporation 12 Elizabeth Drive Chelmsford MA 01824 Phone 978 250 3343 Fax 978 250 3373 Order Online at www hittite com EaMittite MICROWAVE CORPORATION Broadband Gain amp Return Loss 25 RESPONSE dB 2 2 5 3 3 5 4 4 5 5 5 5 6 FREQUENCY GHz P1dB vs Temperature 30 28 OUTPUT P1dB dBm 3 3 25 3 5 3 75 4 4 25 4 5 FREQUENCY GHz Output IP3 vs Temperature OIP3 dBm 3 3 25 3 5 3 75 4 4 25 4 5 FREQUENCY GHz HMC326MS8G GaAs InGaP HBT MMIC DRIVER AMPLIFIER 3 0 4 5 GHz Gain vs Temperature GAIN dB 3 3 25 3 5 3 75 4 4 25 4 5 FREQUENCY GHz Psat vs Temperature Psat dBm 30 3 3 25 3 5 3 75 4 4 25 4 5 FREQUENCY GHz Power Compression 3 5 GHz Pout dBm Gain dB PAE Output Power dBm 777 Gain dB PAE INPUT POWER dBm For price delivery and to place orders please contact Hittite Microwave Corporation 12 Elizabeth Drive Chelmsford MA 01824 Phone 978 250 3343 Fax 978 250 3373 Order Online at www hittite com H nO ap or LL
4. lttite HMC326MS8G MICROWAVE CORPORATION GaAs InGaP HBT MMIC DRIVER AMPLIFIER 3 0 4 5 GHz Typical Applications Features The HMC326MS8G is ideal for Psat Output Power 26 dBm e Microwave Radios gt 40 PAE e Broadband Radio Systems Output IP3 36 dBm e Wireless Local Loop Driver Amplifier High Gain 21 dB Vs 5 0V Ultra Small Package MSOP8G Functional Diagram General Description The HMC326MS8G is a high efficiency GaAs InGaP H W U or TE Oo lt Heterojunction Bipolar Transistor HBT MMIC driver VPD 1 8 VCC amplifier which operates between 3 0 and 4 5 GHz GND 7I GND The amplifier is packaged in a low cost Sue mount 8 leaded package with an exposed base for improved RFIN 3 m 6IRFOUT RF and thermal performance The amplifier provides 21 dB of gain and 26 dBm of saturated power from GND 4 S GND a 5 0V supply voltage Power down capability is available to conserve current consumption when the amplifier is not in use Internal circuit matching was optimized to provide greater than 40 PAE PACKAGE BASE Electrical Specifications T 25 C Vs 5V Vpd 5V Frequency Range 3 0 4 5 GHz Gain 18 21 dB Gain Variation Over Temperature 0 025 0 035 dB C Input Return Loss 12 dB Output Return Loss 7 dB Output Power for 1dB Compr
5. t sink The evaluation circuit board shown is C4 3 0 pF Capacitor 0402 Pkg i o available from Hittite upon request C5 2 2 UF Capacitor Tantalum t1 3 3 nH Inductor 0805 Pkg U1 HMC326MS8G Amplifier PCB 104106 Eval Board Circuit Board Material Rogers 4350 For price delivery and to place orders please contact Hittite Microwave Corporation 12 Elizabeth Drive Chelmsford MA 01824 Phone 978 250 3343 Fax 978 250 3373 Order Online at www hittite com Etittite HMC326MS8G MICROWAVE CORPORATION GaAs InGaP HBT MMIC DRIVER AMPLIFIER 3 0 4 5 GHz Application Circuit Vpd Pin 1 Vs SV 5V H nO ep or LL z A lt GND Li 3 3 nH PIN 2 4 5 7 C1 C2 330 pF C3 0 7 pF C4 3 0 pF C5 2 2 UF Note 1 C1 should be located lt 0 1 2 54 mm from pin 8 Vcc Note 2 C2 should be located lt 0 1 2 54 mm from L1 For price delivery and to place orders please contact Hittite Microwave Corporation 12 Elizabeth Drive Chelmsford MA 01824 Phone 978 250 3343 Fax 978 250 3373 Order Online at www hittite com
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