hittite HMC132C8 handbook
Contents
1. CORPORATION HMC132C8 SMT HIGH ISOLATION SPDT SWITCH DC 8 GHZ FEBRUARY 2001 Insertion Loss Isolation a a a 2 z 6 6 d E 3 O tr Q uw 05 zZ 0 2 4 6 8 10 0 2 4 6 8 10 FREQUENCY GHz FREQUENCY GHz Return Loss RETURN LOSS dB FREQUENCY GHz 12 Elizabeth Drive Chelmsford MA 01824 Phone 978 250 3343 Fax 978 250 3373 Web Site www hittite com 7 7 cL SMT SPDT Switcues Outline ga SMT SPDT SwrcHes t JHittite HMC132C8 MICROWAVE CORPORATION HMC132C8 SMT HIGH ISOLATION SPDT SWITCH DC 8 GHZ FEBRUARY 2001 Schematic Truth Table RF COM Control Input Signal Path State PIN 7 A B RF to RF1 RF to RF2 5 ly 1 E High Low ON OFF RF1 RF2 PIN 1 PIN 4 Low High OFF ON d t m tb E v Do not HOT switch power levels gt 15 dBm V 0 5Vdc i ee ee cup qoom PINS 2 3 8 and PIN 5 PIN 6 L GackSiDE Bib GND Con trol Voltages State Bias Condition Absolute Maximum Hatings Low 0 to 0 2V 20uA Max Control Voltage Range 40 5 to 7 5 Vdc High 5V 200uA Typ to 7V 600uA Max Storage Temperature 65 to 175 deg C Operating Temperature 55 to 85 deg C COPLANARITY MAX 0 197 0 203 5 00 5 16 PIN 8 0 095 RF GND COM B CHAMFERED 2 41 MAX 0 DEG TO 7 DEG 0 282 0 298 7 16 7 57 0 152. 0 0 HMC122C8 I g3 SMT SPDT Switcues t2 Hittite MICROWAVE CORPORATION HMC132C8 GaAS MMIC SMT HIGH ISOLATION SPDT SWITCH DC 8 GHZ FEBRUARY 2001 Features BANDWIDTH DC 8 GHz HIGH ISOLATION gt 50 dB NON REFLECTIVE DESIGN General Description The HMC132C8 is a surface mount low cost non hermetic packaged version of the HMC132G7 MMIC SPDT switch Thedevice is a fast broadband SPDT switch featuring high gt 42 dB isolation over the entire band The switch is non reflective at both RF1 and RF2 ports Applications for this device include T R switching for 5 2 GHz UNII 5 8 GHz ISM circuits WLAN and S C and X Band Telecom radios Parameter Frequency Min Typ Max Units DC 2 GHz 1 4 1 7 dB Insertion Loss DC 6 GHz 1 8 2 2 dB DC 8 GHz 2 6 3 0 dB DC 2 GHz 50 54 dB Isolation DC 6 GHz 38 45 dB DC 8 GHz 36 40 dB DC 2 GHz 14 19 dB Return Loss on state DC 6 GHz 10 14 dB DC 8 GHz 8 13 dB Input Power for 0 1 dB Compression 0 5 8 GHz 20 25 dBm Input Power for 1dB Compression 0 5V Ctl 0 5 8 GHz 22 27 dBm Input Third Order Intercept 0 5 8 GHz 38 42 dBm Switching Characteristics DC 8 GHz tRISE tFALL 10 90 RF 3 ns tON tOFF 50 CTL to 10 90 RF 6 ns 12 Elizabeth Drive Chelmsford MA 01824 Phone 978 250 3343 Fax 978 250 3373 Web Site www hittite com 7 6 esHittite HMC132C8 MICROWAVE
3. 0 3343 Fax 978 250 3373 Web Site www hittite com 7 9 TA SMT SPDT SWITCHES SMT SPDT Switches S t JHittite HMC132C8 MICROWAVE CORPORATION HMC132C8 SMT HIGH ISOLATION SPDT SWITCH DC 8 GHZ FEBRUARY 2001 Evaluation Circuit Board The circuit board used in the final application should use RF circuit design techniques Signal lines should have 50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to thatshown above A sufficient number of VIA holes should be used to connectthe top and bottom ground planes The evaluation circuit board as shown is available from Hittite upon request Evaluation Circuit Board Layout Design Details Layout Technique Grounded Co Planar Waveguide GCPW Material Rogers 4350 Dielectric Thickness 0 020 0 51 mm 50 Ohm Line Width 0 034 0 86 mm Gap to Ground Edge 0 010 0 25 mm Ground VIA Hole Diameter 0 014 0 36 mm Connectors SMA F EF Johnson P N 142 0701 806 12 Elizabeth Drive Chelmsford MA 01824 Phone 978 250 3343 Fax 978 250 3373 Web Site www hittite com 7 10 esHittite HMC132C8 MICROWAVE CORPORATION HMC132C8 SMT HIGH ISOLATION SPDT SWITCH DC 8 GHZ FEBRUARY 2001 NOTES Phone 978 250 3343 Fax 978 250 3373 Web Site www hittite com 12 Elizabeth Drive Chelmsford MA 01824 7 11 So SMT SPDT SWITCHES
4. 7 0 163 3 99 4 14 0 020 0 040 0 51 1 02 RF1 GND GND 0 007 0 009 TYP M m PIN 1 4 0 18 0 23 1 MATERIAL A PACKAGE BODY amp COVER WHITE ALUMINA 92 0 177 0 188 B LEADS amp PACKAGE BOTTOM COPPER 0 18 0 23 2 PLATING ELECTROLYTIC GOLD 100 200 MICROINCHES OVER ELECTROLYTIC NICKEL 100 TO 200 MICROINCHES 8 DIMENSIONS ARE IN INCHES MILLIMETERS UNLESS OTHERWISE SPECIFIED TOL ARE 0 005 0 13 oases 4 ALL UNLABELED LEADS ARE GROUND THESE LEADS ARE 3 48 3 63 CONNECTED INTERNALLY TO THE PACKAGED BOTTOM GROUND THE PACKAGE BOTTOM RF GROUND MUST BE SOLDERED TO THE PCB RF GROUND SE GNDIBDANE 5 PACKAGE LENGTH AND WIDTH DIMENSIONS SHOWN DO NOT INCLUDE COPLANAR WITH LEADS LID SEAL PROTRUSION ALLOWABLE PROTRUSION SHALL BE 0 005 0 050 TYP lt 0 127MM PER SIDE 1 27 E la 0 020 0 003 TYP 0 51 0 08 12 Elizabeth Drive Chelmsford MA 01824 Phone 978 250 3343 Fax 978 250 3373 Web Site www hittite com 7 8 esHittite HMC132C8 MICROWAVE CORPORATION HMC132C8 SMT HIGH ISOLATION SPDT SWITCH DC 8 GHZ FEBRUARY 2001 Suggested Driver Circuit for HMC132C8 Vz 5 1V Izt 50uA ON COMPENSATED DEVICES GaAs SWITCH CD4689 CONTROL TTL OB OR CMOS 74HCT04 TTL 74HC04 CMOS 5 VDC Simple driver using inexpensive standard logic ICs provides fast switching using minimum DC current 12 Elizabeth Drive Chelmsford MA 01824 Phone 978 25
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