ST STPS40M120C handbook
Contents
1. Fi EX Gi 240 270 0 094 0 106 H2 10 1040 0 393 0 409 L2 16 4 Typ 0 645 Typ i n L4 13 14 0511 0551 E L5 265 295 0104 0 116 L6 15 25 15 75 0 600 0 620 L7 6 20 6 60 0 244 0 259 L9 3 50 3 93 0 137 0 154 M 2 6 Typ 0 102 Typ Dia 3 75 3 85 0 147 0 151 4 Doc ID 022916 Rev 1 7 9 Ordering information STPS40M120C 3 Ordering information Table 8 Ordering information Order code Marking Package Weight Base qty Delivery mode TO 220AB STPS40M120CTN PS40M120CTN piani 1 9g 50 Tube narrow leads STPS40M120CT PS40M120CT TO 220AB 1 9g 50 Tube STPS40M120CR PS40M120CR I PAK 1 49g 50 Tube 4 Revision history Table 9 Document revision history Date Revision Changes 02 Apr 2012 First issue 8 9 Doc ID 022916 Rev 1 STPS40M120C Please Read Carefully Information in this document is provided solely in connection with ST products STMicroelectronics NV and its subsidiaries ST reserve the right to make changes corrections modifications or improvements to this document and the products and services described herein at any time without notice All ST products are sold pursuant to ST s terms and conditions of sale Purchasers are solely responsible for the choice selection and use of the ST products and services described herein and ST assumes2. 0 1 0 6 0 5 0 4 0 01 0 3 Single pulse 0 2 0 1 t s t us 0 0 bu 0 001 1 E 04 1 E 03 1 E 02 1 E 01 1 E 00 1 10 100 1000 ky Doc ID 022916 Rev 1 3 9 Characteristics STPS40M120C Figure 6 Reverse leakage current versus Figure 7 Junction capacitance versus reverse voltage applied reverse voltage applied typical values per diode typical values per diode 1 E403 mA 10000 C PF F iMHz Vose 30MVems H 1 E402 TT Wl T 150 C 1 E 01 T 125 C T 100 C 1 E 00 i 1000 Tj 75 C 1 E 01 Tesoc Tas 1 E 02 V amp V 1 E 03 Va V 100 alV 0 10 20 30 40 50 60 70 80 90 100 110 120 1 10 100 1000 Figure 8 Forward voltage drop versus Figure 9 Reverse safe operating area for
3. 17 STPS40M120C Power Schottky rectifier Datasheet production data Features Ai m High current capability K m Avalanche rated Ab m Low forward voltage drop ie m High frequency operation gs Description wv SN A2 This Schottky diode is suited for high frequency P switch mode power supply K TO 220AB narrow leads PPAK Packaged in TO 220AB TO 220AB narrow leads STPS40M120CTN STPS40M120CR and I PAK this device is intended to be used in K notebook game station and desktop adapters providing in these applications a good efficiency at both low and high load N etie c 8 A2 Figure 1 Electrical characteristics N Al K I mc Forward TO 220AB STPS40M120CT po 0 2xto Jen net Table 1 Device summary VAR Symbol Value A oc ME IF AV 2x20A VTo VF lo VF VrF 2xlo VRRM 120 V SUM T max 150 C Ve typ 0 44 V MIMMMRMeeMMeMMy lAR a Varm and lagy must respect the reverse safe operating area defined in Figure 9 V ap and lap are pulse measurements tp lt 10 us Vg IR Var and Ve are static characteristics April 2012 Doc ID 022916 Rev 1 1 9 This is information on a product in full production www st com Characteristics STPS40M120C 2 9 Characteristics Table 2 Absolute ratings limiting values per diode at T p 25 C unless otherwise specified Symbol Paramete
4. Table 4 Static electrical characteristics per diode Symbol Parameter Test conditions Min Typ Max Unit xU s i Tj225 C acu 75 370 yA everse leakage curren i Tes 9 79 25 70 mA Tj 125 C IF 5A 0 44 0 49 Tj 125 C l 10A 0 52 0 57 Ve Forward voltage drop V Tj 25 C 0 79 lF 20A Tj 125 C 0 61 0 67 1 Pulse test tp 2 5 ms 5 lt 2 2 Pulse test tp 380 us 5 lt 2 To evaluate the conduction losses use the following equation P 0 54 x IE av 0 0065 x I As Figure 2 Average forward power dissipation Figure 3 Average forward current versus versus average forward current per ambient temperature 6 0 5 per diode diode 20 Pray W 24 Trav A 5 05 ap Rth j a Pth j c 16 20 6202 16 s 8 04 6 0 05 12 8 8 rq 4 8 t T p Ie ToC 0 4 8 12 16 20 24 28 0 25 50 75 100 125 150 Figure 4 Normalized avalanche power Figure 5 Relative variation of thermal derating versus pulse duration impedance junction to case versus pulse duration Parm tp i Pan 10 us 0 9 0 8 0 7 ola 10 Zins th j c
5. 75 3 85 0 147 0 151 Q 2 65 2 95 0 104 0 116 Doc ID 022916 Rev 1 5 9 Package information STPS40M120C 6 9 Devices in I PAK with nickel plated back frame must NOT be mounted by frame soldering like SMDs Such devices are intended to be through hole mounted ONLY and in no circumstances shall ST be held liable for any lack of performance or damage arising out of soldering of nickel plated back frames Table 6 I PAK dimensions L2 A1 gt Dimensions Ref Millimeters Inches Min Max Min Max A 4 40 4 60 0 173 0 181 Al 2 40 2 72 0 094 0 107 b 0 61 0 88 0 024 0 035 b1 1 14 1 70 0 044 0 067 c 0 49 0 70 0 019 0 028 c2 1 23 1 32 0 048 0 052 D 8 95 9 35 0 352 0 368 e 2 40 2 70 0 094 0 106 el 4 95 5 15 0 195 0 203 E 10 10 40 0 394 0 409 13 14 0 512 0 551 L1 3 50 3 93 0 138 0 155 L2 1 27 1 40 0 050 0 055 Doc ID 022916 Rev 1 4 STPS40M120C Package information Table 7 TO 220AB dimensions Dimensions Ref Millimeters Inches Min Max Min Max A 4 40 4 60 0 173 0 181 C 1 23 1 32 0 048 0 051 gt ae D 2 40 2 72 0 094 0 107 E F 0 49 0 70 0 019 0 027 0 61 0 88 0 024 0 034 F1 1 14 1 70 0 044 0 066 F2 1 14 1 70 0 044 0 066 Eep G 4 95 5 15 0 194 0 202 L6 L2 F2
6. AT USER S OWN RISK Resale of ST products with provisions different from the statements and or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever any liability of ST ST and the ST logo are trademarks or registered trademarks of ST in various countries Information in this document supersedes and replaces all information previously supplied The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners 2012 STMicroelectronics All rights reserved STMicroelectronics group of companies Australia Belgium Brazil Canada China Czech Republic Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Philippines Singapore Spain Sweden Switzerland United Kingdom United States of America www st com ky Doc ID 022916 Rev 1 9 9
7. no liability whatsoever relating to the choice selection or use of the ST products and services described herein No license express or implied by estoppel or otherwise to any intellectual property rights is granted under this document If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY FITNESS FOR A PARTICULAR PURPOSE AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION OR INFRINGEMENT OF ANY PATENT COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES ST PRODUCTS ARE NOT RECOMMENDED AUTHORIZED OR WARRANTED FOR USE IN MILITARY AIR CRAFT SPACE LIFE SAVING OR LIFE SUSTAINING APPLICATIONS NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY DEATH OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE ST PRODUCTS WHICH ARE NOT SPECIFIED AS AUTOMOTIVE GRADE MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS
8. r Value Unit Vrru_ Repetitive peak reverse voltage 120 V lIEF aus Forward rms current 30 A Per diode T 130 C 20 lr av Average forward current 6 0 5 A Per device T 120 C 40 lesu Surge non repetitive forward current tp 10 ms sinusoidal 220 A Parm Repetitive peak avalanche power Tj 125 C tp 10 ps 1600 2 Maximum repetitive peak i VARM avalanche voltage tp lt 10 Us Tj lt 125 C lar lt 10 7A 150 V 2 Maximum single pulse ij VASM peak avalanche voltage tp lt 10 Us Tj lt 125 C lAR lt 10 7 A 150 V Tag Storage temperature range 65 to 4175 C T Maximum operating junction temperature 150 C 1 For pulse time duration deratings please refer to Figure 4 More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the STMicroelectronics Application notes AN1768 Admissible avalanche power of schottky diodes and AN2025 Converter improvement using Schottky rectifier avalanche specification See Figure 9 dPtot 1 dTj Rth j a Table 3 Thermal resistance condition to avoid thermal runaway for a diode on its own heatsink Parameter Per diode Rihgj c Junction to case Coupling When the two diodes 1 and 2 are used simultaneously AT diode 1 P diode 1 x Ry Per diode P diode 2 x Rih c 4 Doc ID 022916 Rev 1 STPS40M120C Characteristics
9. ward current per diode t lt 10 ps and T 125 C ley A 1000 0 lam A 13 5 47t 13 0 100 0 Masc am values ae 12 5 DE 12 0 Tes I 11 5 Typical values ay ina t salus venice 11 0 z 10 5 a 10 0 i x 9 5 Varm V 9 0 m 1 Veu V 120 130 140 150 160 170 0 0 0 2 0 4 0 6 0 8 1 0 1 2 1 4 1 6 4 9 Doc ID 022916 Rev 1 Ty STPS40M120C Package information 2 Package information e Epoxy meets UL94 VO e Cooling method by conduction C e Recommended torque value 0 4 to 0 6 N m In order to meet environmental requirements ST offers these devices in different grades of ECOPACK packages depending on their level of environmental compliance ECOPACK specifications grade definitions and product status are available at www st com ECOPACK is an ST trademark Table 5 TO 220AB narrow leads dimensions b1 x3 Dimensions Ref Millimeters Inches Min Typ Max Min Typ Max A 4 40 4 60 0 17 0 18 0 61 0 88 0 024 0 034 b1 0 95 1 20 0 037 0 047 0 48 0 70 0 019 0 027 D 15 25 15 75 0 60 0 62 D1 1 27 0 05 E 10 00 10 40 0 39 0 41 e 2 40 2 70 0 094 0 106 el 4 95 5 15 0 19 0 20 F 1 23 1 32 0 048 0 052 H1 6 20 6 60 0 24 0 26 Ji 2 40 2 72 0 095 0 107 L 13 00 14 00 0 51 0 55 L1 2 60 2 90 0 102 0 114 L20 15 40 0 61 L30 28 90 1 14 P 3
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ST STPS40M120C handbook