ST STTH20L03C High frequency secondary rectifier handbook
Contents
1. Figure 5 Reverse recovery time versus dir dt Figure 6 Reverse recovery charge versus typical values per diode dir dt typical values per diode 100 trr ns 400 Qua NC 90 aso L bai 80 Tie125 C 300 70 60 250 50 200 40 150 30 100 20 n mi 50 diF dt A us dir dt A us 0 0 0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500 Figure 7 Reverse recovery softness factor Figure 8 Relative variation of dynamic versus dlp dt typical values per parameters versus junction diode temperature 0 8 Sracron 2 0 r leia lr lrav 7 oz E Euro 18 rera Referatos 126 c 4 1 6 06 1 4 0 5 1 2 a m 0 4 0 3 0 2 0 1 dIF dt A us 0 2 Qua Tijec 0 0 0 0 0 50 100 150 200 250 300 350 400 450 500 25 50 75 100 m Figure 9 Transient peak forward voltage Figure 10 Forward recovery time versus dlp dt versus dlp dt typical values per typical values per diode diode Vep V2. L5 2 65 2 95 0 104 0 116 L6 15 25 15 75 0 600 0 620 L7 6 20 6 60 0 244 0 259 L9 3 50 3 93 0 137 0 154 M 2 6 typ 0 102 typ Diam 3 75 3 85 0 147 0 151 3 Doc ID 023115 Rev 1 7 9 Ordering information STTH20L03C 3 Ordering information Table 8 Ordering information Order code Marking Package Weight Base dty Delivery mode STTH20L03CT STTH20L03CT TO 220AB 1 9g 50 Tube STTH20L03CG TR STTH20L03CG D PAK 1 48g 1000 Tape and reel 4 Revision history Table 9 Document revision history Date Revision Changes 22 Jun 2012 1 Initial release 8 9 Doc ID 023115 Rev 1 STTH20L03C Please Read Carefully Information in this document is provided solely in connection with ST products S TMicroelectronics NV and its subsidiaries ST reserve the right to make changes corrections modifications or improvements to this document and the products and services described herein at any time without notice All ST products are sold pursuant to ST s terms and conditions of sale Purchasers are solely responsible for the choice selection and use of the ST products and services described herein and ST assumes no liability whatsoever relating to the choice selection or use of the ST products and services described herein No license express or implied by estoppel or otherwise to any intellectual property rights is granted under this do
3. 57 STTH20L03C High frequency secondary rectifier Features m Ultrafast soft and noise free recovery m Low forward voltage drop Description Dual center tap fast recovery epitaxial diodes suited for switch mode power supply and high frequency DC DC converters Packaged in TO 220AB or D PAK this device is especially intended for secondary rectification inside SMPS with high space and power density Datasheet production data TO 220AB D2PAK STTH20L03CT STTH20L03CG Table 1 Device summary Symbol Value IF AV 2x10A VRRM 300 V Tj 40 to 175 C Ve max 0 95 V tre typ 26 ns June 2012 Doc ID 023115 Rev 1 1 9 This is information on a product in full production www st com Characteristics STTH20L03C 1 Characteristics Table 2 Absolute ratings limiting values per diode at 25 C unless otherwise specified Symbol Parameter Value Unit Vpnw Repetitive peak reverse voltage 300 V lems Forward rms current 30 A lev Average forward current 0 5 r E dal RPR i A les Surge non repetitive forward current tp 10 ms sinusoidal 150 A Tag Storage temperature range 65 to 175 C T Operating junction temperature range 40 to 175 C Table 3 Thermal resistance Symbol Parameter Value max Unit Per diode 1 5 Raj Junction to case Total 1 0 C W Rao Coupling 0 5 When diodes 1 and 2 ar
4. ECOPACK is an ST trademark Table 6 D PAK dimensions Dimensions Ref Millimeters Inches Min Max Min Max A 440 460 0 173 0 181 Ai 249 269 0 098 0 106 A2 003 023 0 001 0 009 B 070 093 0 027 0 037 L2 B2 1 14 1 70 0 045 0 067 L E C 0 45 0 60 0 017 0 024 c2 1 23 1 36 0 048 0 054 8 95 9 35 0 352 0 368 E 10 00 10 40 0 393 0 409 G 4 88 5 28 0 192 0 208 L 15 00 15 85 0 590 0 624 opcre L3 140 175 0 055 0 069 2 40 3 20 0 094 0 126 R 0 40 typ 0 016 typ V2 0 8 0 8 Figure 13 Footprint dimensions in mm M 10 30 L ZLZLZ Lo B so eee 74 30 Doc ID 023115 Rev 1 ky STTH20L03C Package information Table 7 TO 220AB dimensions Dimensions Ref Millimeters Inches Min Max Min Max A 4 40 4 60 0 173 0 181 C 1 23 1 32 0 048 0 051 H2 A D 2 40 2 72 0 094 0 107 E F 2 i C 0 49 0 70 0 019 0 027 E E 0 61 0 88 0 024 0 034 Oy F1 1 14 1 70 0 044 0 066 5 um IA F2 114 170 0 044 0 066 Fa f o X G 4 95 5 15 0 194 0 202 ail p G1 240 270 0 094 0 106 H2 10 10 40 0 393 0 409 L2 16 4 typ 0 645 typ Ale L4 13 14 0511 0 551
5. d FP 180 irn ns foie i V Ile 160 nei we 5 T2125 C 140 do 120 8 100 6 80 60 4 40 2 dip di A us 20 dip di A us erui A 0 50 4100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500 4 9 Doc ID 023115 Rev 1 ky STTH20L03C Characteristics Figure 11 Junction capacitance versus reverse voltage applied typical Figure 12 Thermal resistance junction to ambient versus copper surface 2 values per diode under tab D PAR C pF Raga C W 1000 T TT Lira 80 T T T T T T T T F 1 MHz H Printed circuit board FR4 D PAK Vous m s 7 70 copper thickness 35 um 60 50 100 40 30 20 Va V 10 So cm 10 ER 6 1 10 100 1000 0 5 10 15 20 25 30 35 40 4 Doc ID 023115 Rev 1 5 9 Package information STTH20L03C 2 6 9 Package information e Epoxy meets UL94 VO e Cooling method by conduction C e Recommended torque value 0 4 to 0 6 N m In order to meet environmental requirements ST offers these devices in different grades of ECOPACK packages depending on their level of environmental compliance ECOPACK specifications grade definitions and product status are available at www st com
6. trr Reverse recovery time ET V ns 10 A Vp 200 T 2125 C F 55 72 dlr dt 200 A us lam Reverse recovery current aute lc 10A Va 200 V 9 12 A Stactor Softness factor 7 dir dt 200 A us 0 3 T 2125 C le 10A Vp 200 V Q Reverse recovery charges 250 375 nc RR ye dl dt 200 A us ti Forward recovery time le 10 A Veg 1 05 V 200 ns Vrp Forwardrecovery voltage dir dt 100 A us 25 3 5 V Figure 1 Conduction losses versus average Figure 2 Forward voltage drop versus forward current per diode forward current per diode P W IFM A F AV 100 0 14 5 0 05 5 0 1 02 6 0 5 210 4 T 125 C LA i Maximum values CELL Le 12 le 10 0 E we 10 E Mara mine Id 8 71 6 1 0 u 4 12 IF AV A Nu VEM V 0 0 1 I 0 2 4 6 8 10 12 14 00 02 04 06 08 10 12 14 16 18 20 22 Figure 3 Relative variation of thermal Figure 4 Peak reverse recovery current impedance junction to case versus versus dl dt typical values per pulse duration diode Zth j c Rth j c IRM A 10 18 TJ 0 9 16 L vaio 0 8 d Ts125 C 0 7 12 0 6 10 0 5 8 0 4 gs Single pulse 0 2 j 4 0 1 tp s 2 dIF dt A us 0 0 LLLLL 0 1 E 04 1 E 03 1 E 02 1 E 01 1 E 00 0 50 100 150 200 250 300 350 400 450 500 ky Doc ID 023115 Rev 1 3 9 Characteristics STTH20L03C
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8. e used simultaneously Tj diode 1 P diode 1 X Rtn j c P r diode P diode 2 X Rin c Table 4 Static electrical characteristics per diode Symbol Parameter Test conditions Min Typ Max Unit 1 UNE A I Reverse leakage current Varm H Ti 125cc 10 100 Ti 25 C 0 95 1 2 Vf Forward voltage drop If 10A V Tj 125 C 0 8 0 95 1 Pulse test tp 5 ms lt 2 2 Pulse test tp 380 ys lt 2 To evaluate the conduction losses use the following equation P 0 8 x IF AV 0 015 I Rus 4 2 9 Doc ID 023115 Rev 1 STTH20L03C Characteristics Table 5 Dynamic electrical characteristics per diode Symbol Parameter Test conditions Min Typ Max Unit lp 1A Vp 30 V T 25 C 26 35 di dt 100 A us
9. ein and shall not create or extend in any manner whatsoever any liability of ST ST and the ST logo are trademarks or registered trademarks of ST in various countries Information in this document supersedes and replaces all information previously supplied The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners O 2012 STMicroelectronics All rights reserved STMicroelectronics group of companies Australia Belgium Brazil Canada China Czech Republic Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Philippines Singapore Spain Sweden Switzerland United Kingdom United States of America www st com ky Doc ID 023115 Rev 1 9 9
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