ST STPS200170TV1Y Automotive high voltage power Schottky rectifier handbook
Contents
1. p PARM Ti _FARM j PaRM 1 ps Parm 25 C 1 2 lt 4 7 Doc ID 17207 Rev 2 STPS200170TV1Y 2 Package information Epoxy meets UL94 VO Cooling method by conduction C Recommended torque value 1 3 N m Maximum torque value 1 5 N m Package information STMicroelectronics strongly recommend the use of the screws delivered with this product The use of anyother screws is entirely at the user s own risk and will invalidate the warranty In order to mer environmental requirements ST offers these devices in different grades of ECOPACK packages depending on their level of environmental compliance ECOPACK specifications grade definitions and product status are available at www st com ECOPACK is an ST trademark Table 5 ISOTOP dimensions Milimeters inches Min Max Min Maxs re re em oar ome o oreo e920 ras reo E ase asso f om T roo EA 24 80 typ 0 976 typ re soo an oer 088 Doc ID 17207 Rev 2 5 7 Orde2. SZ STPS200170TV1Y Automotive high voltage power Schottky rectifier Features Negligible switching losses Avalanche rated Low leakage current Good trade off between leakage current and forward voltage drop Insulated package Electrical insulation 2500 V rms Capacitance 45 pF AEC Q101 qualified Description This high voltage Schottky rectifier is suitable for high frequency switch mode power supplies Packaged in ISOTOP this device is intended for use in secondary rectification applications October 2011 ISOTOP Table 1 Device summary lF av 2x100A Ve typ 0 63 V Doc ID 17207 Rev 2 1 7 www st com Characteristics STPS200170TV1Y 1 Characteristics Table 2 Absolute ratings limiting values per diode at Tamp 25 C unless otherwise specified fom mer tae Surge non repetitive forward current e 10 ms sinusoidal Repetitive peak avalanche power 1 ps Tj 25 C 100000 T stg Storage temperature range 55 to 150 oC 2 Maximum operating junction temperature 150 e Piot 1 condition to avoid thermal runaway for a diode on its own heatsink R a Rihj a Table 3 Thermal parameters Junction to case Coupling thermal resistance When the diodes are used simultaneously Tjdiode1 P diode1 X Ring c Per diode P giode2 X Rince cry 4 Static electrical characteristics Symbol Parameter Parameter Test conditions Min Typ Max Unit
3. o f o o m Forward voltage drop oan ka p ove 0o86 1 Pulse test to 5ms 6 lt 2 2 Pulse test to 380 us 6 lt 2 To evaluate the conduction losses use the following equation P 0 5 x lE av 0 0018 lF RMS x 2 7 Doc ID 17207 Rev 2 STPS200170TV1Y Characteristics Conduction losses versus average Figure 2 Average forward current versus ambient temperature Figure 1 current per diode 0 5 per diode le av A P av W 0 leav A 60 Figure 4 Relative variation of thermal impedance junction to case versus pulse duration Figure 3 Non repetitive surge peak forward current vesus overload duration maximum values per diode ZinG cY Ring c ingle pu T 1 E 03 1 E 02 1 E 01 1 E 00 tp s 1 E 01 Figure 6 Junction capacitances versus reverse voltage applied typical values per diode Figure 5 Reverse leakage current versus reverse voltage applied typical
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5. nformation in this document supersedes and replaces all information previously supplied The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners 2011 STMicroelectronics All rights reserved STMicroelectronics group of companies Australia Belgium Brazil Canada China Czech Republic Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Philippines Singapore Spain Sweden Switzerland United Kingdom United States of America www st com STi Doc ID 17207 Rev 2 7 7
6. ring information STPS200170TV1Y 3 Ordering information Table 6 Ordering information 279 10 STPS200170TV1Y STPS200170TV1Y ISOTOP without Tube ote with screws 1 This product is supplied with 40 terminal screws and washers for each tube The screws and washers are supplied in a separate pack with the order 4 Revision history Table 7 Document revision history O me m 02 Mar 2010 First issue 07 Oct 2011 Added torque values in Section 2 x 6 7 Doc ID 17207 Rev 2 STPS200170TV1Y Please Read Carefully Information in this document is provided solely in connection with ST products STMicroelectronics NV and its subsidiaries ST reserve the right to make changes corrections modifications or improvements to this document and the products and services described herein at any time without notice All ST products are sold pursuant to ST s terms and conditions of sale Purchasers are solely responsible for the choice selection and use of the ST products and services described herein and ST assumes no liability whatsoever relating to the choice selection or use of the ST products and services described herein No license express or implied by estoppel or otherwise to any intellectual property rights is granted under this document If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or servi
7. values per diode VaV 0 10 20 30 40 50 60 70 80 90 100110 120 130 140 150 160 170 Doc ID 17207 Rev 2 3 7 STPS200170TV1Y Characteristics Figure 7 Forward voltage drop versus Figure 8 Forward voltage drop versus forward current forward current per diode low level per diode high level Irw A Tj 150 C Maximum values Tj 150 C 1 pical valu Typical values Tj 25 C ximum values Maximum values 1 0 0 0 1 02 0 3 04 0 5 06 0 7 08 09 1 0 1 1 1 2 1 3 1 4 Figure 9 Normalized avalanche power Figure 10 Normalized avalanche power derating versus pulse duration derating versus junction temperature PARM tp
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ST STPS200170TV1Y Automotive high voltage power Schottky rectifier handbook