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ST STTH3R04 Ultrafast recovery diode handbook

1. Characterist ics STTH3R04 Figure 5 Relative variation of thermal impedance junction to ambient versus pulse duration SMB epoxy FR4 copper thickness 35 um Relative variation of thermal impedance junction to ambient versus pulse duration SMC Figure 6 a Zn Rens ZorsfPoa 09 som 0 9 sat 0 8 0 8 0 7 0 7 0 6 0 6 0 5 0 5 0 4 0 4 0 3 0 3 0 2 0 2 91 Single pulse tp s 0 1 Single pulse t s 0 0 jpg pp d qoe 0 0 LL 1 E 01 1 E 00 1 E 01 1 E 02 1 E 03 1 E 01 1 E 00
2. kyy STTH3R04 Ultrafast recovery diode Features m Negligible switching losses m Low forward and reverse recovery times m High junction temperature Description The STTHS3R04 series uses ST s new 400 V planar Pt doping technology The STTH3R04 is specially suited for switching mode base drive and transistor circuits Packaged in axial and surface mount packages this device is intended for use in low voltage high frequency inverters free wheeling and polarity protection May 2008 A gt K A PA e VA j d A DO 15 DO 201AD STTH3R04Q STTH3R04 Band indicates cathode side gt gt SMB SMC STTH3R04U STTH3R04S Table 1 Device summary IF AV 3A VRRM 400 V Tomas 175 C Vr typ 0 9 V tr typ 18 ns Rev 1 1 10 www st com Characteristics STTH3R04 1 Characteristics Table 2 Absolute ratings limiting values at 25 C unless otherwise specified Symbol Parameter Value Unit Vrarmu Repetitive peak reverse voltage 400 V DO 15 Tieag 70 C DO 201AD Tigag 80 C lEav Average forward current 0 5 3 0 A SMB Tieag 70 C SMC Tiead 100 C lsm Surge non repetitive forward current tp 10 ms Sinusoidal 60 A Tatg Storage temperature range 65 to 4 175 C Tj Maximum operating junction temperature 175 C
3. dt A us 0 0 0 Lo ot 4 i 25 50 75 100 125 150 0 50 100 150 200 250 300 350 400 450 500 Figure 13 Forward recovery time versus Figure 14 Thermal resistance versus dig dt typical values lead length DO 15 tea ns Ring a C W 130 trii 20 i20 L 3A DO 15 T 125 C 4 110 100 100 90 80 80 70 60 60 50 40 10 30 20 20 10 di dt A us Lis mm 0 L L L 1 L 0 L L L r 0 50 100 150 200 250 300 350 400 450 500 0 0 0 5 1 0 1 5 2 0 2 5 3 0 3 5 4 0 4 5 5 0 Figure 15 Thermal resistance junction to Figure 16 Thermal resistance versus lead ambient versus copper surface under each lead DO 201AD epoxy FR4 copper thickness 35 pm length DO 201AD Ring C W Ra C W 0 0 DO 201AD 90 DO 201AD 70 80 Fini LLL M EE EE EE LLLI 60 70 50 60 40 50 40 30 Peng 30 20 20 10 10 Lieads mm Se cm 0 CET 0 0 0 0 5 1 0 1 5 2 0 2 5 3 0 3 5 4 0 4 5 5 0 5 10 15 20 25 ky 5 10 Package information STTH3R04 Figure 17 Thermal resistance junction to ambient versus copper surface under each lead SMB SMC epoxy FR4 copper thickness 35 um Ring a C W 20 100 K J Sus N 80 pe f bang Tam Tet
4. 1 On infinite heatsink with 10 mm lead length Table 3 Thermal parameters Symbol Parameter Value Unit DO 15 25 Pun Junction to lead Lead length m 10 on on infinite heatsink DO 201AD 22 C W SMB 25 Ring Junction to lead SMC 17 Table 4 Static electrical characteristics Symbol Parameter Test conditions Min Typ Max Unit RO R leak t Uic ee 2 pA R everse leakage curren R VRRM H Tj 125 C 5 50 Tj 25 C 1 5 VE Forward voltage drop T 100 C lp 3 0A 1 0 1 25 V Tj 150 C 0 9 1 15 1 Pulse test tj 5 ms 6 2 7o 2 Pulse test tp 380 us lt 2 To evaluate the conduction losses use the following equation P 0 9x IE Av 0 083 x IE tus y 2 10 STTH3R04 Characteristics Table 5 Dynamic characteristics Tj 25 C unless otherwi
5. 1 E 01 1 E 02 1 E 03 Figure 7 Junction capacitance versus Figure 8 Reverse recovery charges versus reverse voltage applied dig dt typical values typical values ioo CPP o geo Nu 90 vZszov S2500 S 70 T 125 C 60 10 50 40 30 20 pees V4 V 10 mcm di dt A us 1 L L i 0 L ii ji 1 10 100 1000 10 100 1000 Figure 9 Reverse recovery time versus Figure 10 Peak reverse recovery current dip dt typical values versus dl dt typical values 00 tra ns 8 lau A 20 vica v 7 Vica V 80 6 70 60 5 T 125 C 4 50 4 j T 125 C 40 h 3 7 T 25 C 2 A Ed i 5 10 diy dt A us dl dt A us 0 0 L L LII 10 100 1000 10 100 1000 4 10 ky STTH3R04 Characteristics Figure 11 Relative variations of dynamic Figure 12 Transient peak forward voltage parameters versus junction versus dl dt typical values temperature 3d Qua Ipm Tj Qori Igu T 125 C 25 VV 3A I 3 A Vp 320 V T 125 C 1 2 20 1 0 la 15 0 8 0 6 Qus 10 0 4 5 0 2 ToC di
6. 60 suc LALICTLI 40 20 Scu em 0 0 0 0 5 1 0 1 5 2 0 2 5 3 0 3 5 4 0 5 0 2 Package information e Epoxy meets UL94 VO e Cooling method by conduction C In order to meet environmental requirements ST offers these devices in ECOPACK packages These packages have a lead free second level interconnect The category of second level interconnect is marked on the package and on the inner box label in compliance with JEDEC Standard JESD97 The maximum ratings related to soldering conditions are also marked on the inner box label ECOPACK is an ST trademark ECOPACK specifications are available at www st com Table 6 DO201AD dimensions Dimensions Ref Millimeters Inches Min Max Min Max B A B a E E X A 9 50 0 374 Eee eee eee Gene AT B 25 40 1 000 7 lon Hale C 5 30 0 209 oc D 1 30 0 051 E 1 25 0 049 Notes 1 The lead diameter D is not controlled over zone E 2 The minimum length which must stay straight between the right angles after bending is 0 59 15mm 6 10 STTH3R04 Package information Table 7 DO 15 dimensions Dimensions l C A C N Ref Millimeters Inches Min Max Min Max Y A 6 05 6 75 0 238 0 266 Ip B 2 95 3 53 0 116 0 139 LB C 26 31 1 024 1 220 D 0
7. 71 0 88 0 028 0 035 Table 8 SMB dimensions Dimensions Ref Millimeters Inches E1 Min Max Min Max D A1 1 90 2 45 0 075 0 096 A2 0 05 0 20 0 002 0 008 b 1 95 2 20 0 077 0 087 mu c 0 15 0 40 0 006 0 016 D 3 30 3 95 0 130 0 156 2 6 2 E 5 10 5 60 0 201 0 220 2 E1 4 05 4 60 0 159 0 181 L 0 75 1 50 0 030 0 059 Figure 18 Footprint dimensions in mm inches 1 62 7 2 60 1 1 82 c4 0 102 0 064 2 18 0 086 5 84 0 300 ki 7 10 Package information STTH3R04 Table 9 SMC dimensions Dimensions Ref Millimeters Inches at Min Max Min Max A1 190 245 0 075 0 096 A2 0 05 0 20 0 002 0 008 b 290 320 0 114 0 126 c 015 040 0 006 0 016 D 5 55 6 25 0 218 0 246 A1 j E 7 7 4 321 C E 5 8 15 0 305 0 3 cf A2 E1 6 60 7 15 0 260 0 281 E2 4 40 4 70 0 173 0 185 L 0 75 1 50 0 030 0 059 Figure 19 Footprint dimensions in mm inches 1 54 5 11 1 54 posi 0 201 6 06 8 19 0 322 x 8 10 Ordering information STTH3R04 3 Ordering information Table 10 Ordering information Order code Marking Package Weight Base qty Delivery mode STTH3R04 STTH3R04 DO 201AD 1 169 600 Ammopack STTH3RO4RL STTH3R04 DO 201AD 1 16g 1900 Tape and reel STTH3R04Q S
8. of their respective owners 2008 STMicroelectronics All rights reserved STMicroelectronics group of companies Australia Belgium Brazil Canada China Czech Republic Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom United States of America www st com q 10 10
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10. TTH3R04Q DO 15 0 4g 1000 Ammopack STTHSRO4QRL STTH3R04Q DO 15 0 4g 6000 Tape and reel STTH3R04S R4S SMC 0 243 g 2500 Tape and reel STTHSRO4U 3R4U SMB 0 12 g 2500 Tape and reel 4 Revision history Table 11 Document revision history Date Revision Description of changes 30 May 2008 1 First issue 9 10 STTH3R04 Please Read Carefully Information in this document is provided solely in connection with ST products STMicroelectronics NV and its subsidiaries ST reserve the right to make changes corrections modifications or improvements to this document and the products and services described herein at any time without notice All ST products are sold pursuant to ST s terms and conditions of sale Purchasers are solely responsible for the choice selection and use of the ST products and services described herein and ST assumes no liability whatsoever relating to the choice selection or use of the ST products and services described herein No license express or implied by estoppel or otherwise to any intellectual property rights is granted under this document If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual
11. se stated Symbol Parameter Test conditions Min Typ Max Unit lE 1 A dlp dt 50 A us 35 Vg 30 V T 25 C trr Reverse recovery time ns lp 1 A dlp dt 100 A us 18 25 Vg 30 V T 25 C lp 3 0 A dlp dt 200 A us Inu Reverse recovery current Vg 320 V Tj 125 C 4 5 5 A IF 3 0A dlg dt 100 A us tfr Forward recovery time Ven 1 1 Vegas Tj 25 C 75 ns Vep Forward recovery voltage lEF23 0A dlp dt 100 A us 2 5 V Figure 1 Conduction losses versus Figure 2 Forward voltage drop versus average forward current forward current 43 1d 0 05 8 0 1 8 02 8 0 5 8 1 Pa m d 4 0 45 lt ni 3 5 i Tj 150C Da 3 0 35 Maximum values i 30 FT 2 5 25 2 0 T 150 C 7 20 Typical values 7 vs 15 7t na N 1 0 7 p 1 10 7 IMs um eo i lef ESTE 5 Ps gt ae Veu V 0 0 0 AF 0 0 0 5 1 0 1 5 2 0 2 5 3 0 3 5 4 0 0 0 0 4 0 8 1 2 1 6 2 0 2 4 2 8 3 2 Figure 3 Relative variation of thermal Figure 4 Relative variation of thermal impedance junction to lead versus impedance junction to ambient pulse duration DO 15 epoxy FR4 versus pulse duration DO 201AD copper thickness 35 pm epoxy FR4 copper thickness 35 um io Zna Poin i Y oie Pa DO 15 DO 201AD 0 9 Lieads 10mm 0 9 Lieads 10mm 0 8 0 8 0 7 0 7 0 6 0 6 0 5 0 5 0 4 0 4 0 3 0 3 0 2 0 2 03 Single pulse ie 01 f Singls piles tp s 0 0 0 0 LIE 1 E 01 1 E 00 1 E 01 1 E 02 1 E 03 1 E 01 1 E 00 1 E 01 1 E 02 1 E 03 ky 3 10

ST STTH3R04 Ultrafast recovery diode handbook

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