ST STPS80170C handbook
Contents
1. Va V 1 E 01 av 0 10 20 30 40 50 60 70 80 90 100110 120 130 140 150 160 170 Figure 9 Forward voltage drop versus forward current per diode low level Iru A 40 T 35 l r 30 Tze Maximum values aloe 25 T 20 Tj 125 C T Tj 25 C 4 Typical values pap a Maximum values __ 15 ote A 10 y 5 4 E Vi Paar p r 0 0 0 0 1 0 2 0 3 0 4 0 5 0 6 0 7 0 8 0 9 1 0 4 6 Figure 8 Junction capacitance versus reverse voltage applied typical values per diode C pF 10000 F 1MHz LL Vosc 30mVaus T 25 C 1000 Va V 100 po 11 1 10 100 1000 Figure 10 Forward voltage drop versus forward current per diode high level Yeu A 00 Tj 125 C hac 100 Maximum values DT 4 i ct P 1 Tj 125 C Er aa Typical values ey Ti 25 C Maximum values Vie 10 uk A AT 7 E Vew V 1 0 0 0 1 0 2 0 3 0 4 0 5 0 6 0 7 0 8 0 9 1 0 1 1 1 2 1 3 1 42. q STPS80170C Figure 11 TO 247 Package Mechanical Data DIMENSIONS Max 0 203 0 102 0 031 0 055 0 094 0 133 0 620 0 793 0 169 0 582 0 118 0 143 In order to meet environmental requirements ST offers these devices in ECOPACK packages These packages have a Lead free second level interconnect The category of second level interconnect is marked on the package and on the inner box label in compliance with JEDEC Standard JESD97 The maximum ratings related to soldering conditions are also marked on the inner box label ECOPACK is an ST trademark ECOPACK specifications are available at www st com Table 6 Ordering Information m Epoxy meets UL94 VO m Cooling method by conduction C m Recommended torque value 0 8 Nm m Maximum torque value 1 0 Nm Table 7 Revision History 16 Sep 2005 ky 5 6 STPS80170C Information furnished is believed to be accurate and reliable However STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics Specifications mentioned in this publication are subject to chan
3. 0 q STPS80170C Figure 2 Average forward current versus ambient temperature 0 5 per diode lev A Tama C 0 25 50 75 100 125 150 175 Figure 4 Normalized avalanche power derating versus junction temperature PARM tp m PARM 25 C TiC 0 L 25 50 75 100 125 150 Figure 6 Relative variation of thermal impedance junction to case versus pulse duration Zool Pang Q 1 L Single pulse te s S TyT H 1 E 03 1 E 02 1 E 01 1 E 00 3 6 STPS80170C Figure 7 Reverse leakage current versus reverse voltage applied typical values per diode IR HA 1 E 06 1 E 05 1 E 04 Tries 1 E403 ToC 1 E 02 1 E 01 1 E 00
4. 3 When the diodes 1 and 2 are used simultaneously A Tj diode 1 P diode 1 x Rith j c Per diode P diode 2 x Rih c Table 5 Static Electrical Characteristics per diode Symbol Parameter Tests conditions Min Typ Max Unit Reverse leakage current Tj 125 C Tj 125 C Ve Forward voltage drop Pulse test tp 5ms lt 2 tp 380 us lt 2 To evaluate the conduction losses use the following equation P 0 62 x IF AV 0 003 IF RMS 2 6 Figure 1 Average forward power dissipation versus average forward current per diode Prav W 6 0 05 Irav A 6 t T tp oma Figure 3 Normalized avalanche power derating versus pulse duration PARM tp i PanM 1us 0 1 0 01 0 001 tp us 0 01 0 1 1 10 100 1000 Figure 5 Non repetitive surge peak forward current versus overload duration maximum values per diode WA 200 To 75 C 7 100 L A i Te 125 C 8 05 t s 1 E 03 1 E 02 1 E 01 1 E 0
5. ge without notice This publication supersedes and replaces all information previously supplied STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners 2005 STMicroelectronics All rights reserved STMicroelectronics group of companies Australia Belgium Brazil Canada China Czech Republic Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom United States of America www st com ele r
6. ky STPS80170C HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Table 1 Main Product Characteristics IF Av 2x40A VRRM 170 V Tj 175 C Vr max 0 74 V FEATURES AND BENEFITS m High junction temperature capability m Low leakage current m Good trade off between leakage current and forward voltage drop TO 247 m Low thermal resistance STPS80170CW m High frequency operation m Avalanche specification Table 2 Order Code DESCRIPTION Part Number Marking Dual center tab Schottky rectifier suited for High STPS80170CW STPS80170CW Frequency Switched Mode Power Supplies Packaged in TO 247 this device is intended for use to enhance the reliability of the application Table 3 Absolute Ratings limiting values per diode Symbol Parameter Vale Unit Varn Repetitive peak reverse voltage l ams RMS forward current er device 80 lsm Surge non repetitive forward current tp 10 ms sinusoidal Parm Repetitive peak avalanche power Tstg Storage temperature range 65 to 175 Tj Maximum operating junction temperature dV dt Critical rate of rise of reverse voltage 10000 V us dPtot 1 dTj Rth j a thermal runaway condition for a diode on its own heatsink September 2005 REV 1 1 6 STPS80170C Table 4 Thermal Parameters Symbol Parameter Value Unit Per diode 0 7 Rth j c Junction to case Total 0 5 C W Rth c Coupling 0
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ST STPS80170C handbook