ST STTH302S handbook
Contents
1. Zth j a Rth j a IFw A 1 0 100 0 reme 0 9 Tj 125 C EP zi Maximum values V uet 0 8 kc 0 7 dum zT 0 6 5 04 10 0 LE E im Tj 25 C id 7 Fa Maximum values 0 4 Fi H8 0 2 1 0 0 3 7 L 0 1 I H i F 0 2 H 0 1 Fade psc i AR i Hi Vrw V p s il if 0 0 tp T j iy p 0 1 if 1 E 01 1 E 00 1 E 01 1 E 02 1 E 03 00 0 2 04 06 08 10 12 14 16 18 20 22 24 Fig 5 Junction capacitance versus reverse Fig 6 Reverse recovery time versus dlr dt 90 voltage applied typical values confidence C pF trr ns 100 ie RT 100 a ea a EI F 1MHz lp 3A C 90 Vg 100V 80 70 60 T 125 C 50 40 ___ dite T 25 C 30 L H H41 r 20 VR V M dir dt A ps 10 0 i pon ong 1 10 100 1000 1 10 100 1000 4 3 5 STTH302S Fig 7 Peak reverse recovery current versus dlr dt 90 confidence IRM A 0 l 3A V_ 100V 5 0 4 0 Tj 125 C T 25 C a dir dt A us 0 0 UD LLLI i 10 100 1000 Fig 9 Relative variations of dynamic parameters versus junction temperature IRM tRR QnR Tj IRM tRR QnR Tj 25 C 3 5 l 3A dl dt 200A us Vg 100V 3 0 Qs 2 5 2 0 15 m em Tj C2. rud 1 0 25 50 75 100 125 150 175 4 5 Fig 8 Reverse recovery charges versus dlr dt 9096 confidence QnR nC 10 le 3A 90 v 100v ede CLE dir dt A us 1 10 100 1000 Fig 10 Thermal resistance junction to ambient versus copper surface under each lead epoxy FRA e 35yum Rth j a C W S cm ll ll l STTH302S PACKAGE MECHANICAL DATA SMC DIMENSIONS E1 REF Millimeters Inches Min Max A1 0 075 0 096 A2 0 002 0 008 b 0 114 0 126 c 0 006 0 016 0 305 0 321 E1 0 260 0 281 Es E2 0 173 0 185 A i D 0 218 0 246 L 0 030 0 063 FOOTPRINT 3 3 2 0 4 2 2 0 Ordering code Marking STTH302S U32 a Epoxy meets UL 94 V0 Package Weight Base qty Delivery mode SMC 0 245 g 2500 Tape amp reel Information furnished is believed to be accurate and reliable However STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use No license is granted by implication or otherw
3. HARACTERISTICS Symbol Tests conditions Min Max Unit trr Reverse recovery Tj 25 C IE 21A Irr 2 50 A us 35 ns Vn230V tfr Forward recovery Tj 25 C IF 3A dle dt 50 A us ns Ver 1 1 x Vemax VFP Forward recovery Tj 25 C IrF 3A dle dt 50 A us 1 6 V voltage 215 ky STTH302S Fig 1 Average forward power dissipation versus Fig 2 Average forward current versus ambient average forward current temperature 5 0 5 PF AV W IF AV A i 3 5 25 2 0 IF AV A 4 4 Kar id 0 0 0 5 1 0 1 5 2 0 2 5 3 0 3 5 0 25 50 75 100 125 150 175 Fig 3 Relative variation of thermal impedance Fig 4 Forward voltage drop versus forward junction ambient versus pulse duration Printed current circuit board epoxy FR4
4. ise under any patent or patent rights of STMicroelectronics Specifications mentioned in this publication are subject to change without notice This publication supersedes and replaces all information previously supplied STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap proval of STMicroelectronics The ST logo is a registered trademark of STMicroelectronics 2002 STMicroelectronics Printed in Italy All rights reserved STMicroelectronics GROUP OF COMPANIES Australia Brazil Canada China Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom United States http www st com ky T
5. ky STTH302S HIGH EFFICIENCY ULTRAFAST DIODE MAIN PRODUCT CHARACTERISTICS IF AV 3A VRRM 200 V Tj max 175 C Vr max 0 75 V trr max 35 ns FEATURES AND BENEFITS a Very low conduction losses SMC Negligible switching losses Low forward and reverse recovery times a High junction temperature DESCRIPTION The STTH302S which is using ST s new 200V planar technology is specially suited for switching mode base drive amp transistor circuits The device is also intended for use as a free wheeling diode in power supplies and other power switching applications ABSOLUTE RATINGS limiting values Symbol Parameter Vrru Repetitive peak reverse voltage lFav Average forward current Tl 107 C 620 5 FSM Surge non repetitive forward current tp 10 ms Sinusoidal Tstg Storage temperature range 65 175 Tj Maximum operating junction temperature 175 C THERMAL PARAMETERS Symbol Parameter Maximum Unit Rih qj Junction to lead 20 C W April 2002 Ed 1A 1 5 STTH302S STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Tests conditions Min Typ Max Unit Reverse leakage Tj 25 C Vr VRRM Tj 125 C current Forward voltage drop Tj 25 C lF 3A Pulse test tp 5ms 6 lt 2 tp 380us 6 lt 2 To evaluate the maximum conduction losses use the following equation P 0 60 x IF av 0 05 IF RMs DYNAMIC ELECTRICAL C
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ST STTH302S handbook