ST STPS15H100C handbook
Contents
1. Package Information Epoxy meets UL94 VO Table 4 DPAK Package mechanical data Dimensions Ref Millimeters Inches H F Min Max Min Max A A 2 20 2 40 0 086 0 094 A1 0 90 1 10 0 035 0 043 Ep C2 e P A2 0 03 0 28 0 001 0 009 H B 0 64 0 90 0 025 0 035 pue i e9 2 B2 5 20 5 40 0 204 0 212 L C 0 45 0 60 0 017 0 023 AE C2 048 060 0 018 0 023 doi m A1 e TENE 6 00 6 20 0 236 0 244 C a xot po 6 40 6 60 0 251 0 259 m 4 40 4 60 0 173 0 181 880MN H 9 35 10 40 0 368 0 397 z L2 0 80 typ 0 031 typ L4 0 60 1 00 0 023 0 039 V2 0 8 0 8 Figure 11 DPAK Footprint dimensions in mm 6 7 6 7 la Ut 1 6 _ gt _ 1 6 2 3 23 5 8 Package Information STPS15H100C Table 5 IPAK Package mechanical data Dimensions Ref Millimeters Inches Min Typ Max Min Typ Max A 2 20 2 40 0 086 0 094 A1 0 90 1 10 0 035 0 043 LA A3 0 70 1 80 0 027 0 051 B 0 64 0 90 0 025 0 035 E T 7 B2 5 20 5 40 0 204 0 212 2 a T B3 0 95 0 037 i er B5 0 30 0 035 5 C 0 45 0 60 0 017 0 023 C2 0 48 0 60 0 019 0 023 ff2. ky STPS15H100C High voltage power Schottky rectifier Main product characteristics a gt IF Av 2x7 5A K A2 p Tj max 175 C Ve max 0 67 V Features and Benefits m Negligible switching losses m Low leakage current m Good trade off between leakage current and forward voltage drop m Low thermal resistance m Avalanche capability specified STPS15H100CB STPS15H100CH DPAK IPAK Description Dual center tab Schottky rectifier suited for switched mode power supply and high frequency DC to DC converters Packaged in DPAK and IPAK this device is intended for use in high frequency inverters Table 1 Absolute Ratings limiting values per diode Symbol Parameter Value Unit VnnM Repetitive peak reverse voltage 100 V IF RMS RMS forward current 10 A To 2135 C Per diode 7 5 IF Aav Average forward current A 620 5 Per device 15 lesm Surge non repetitive forward current tp 10 ms sinusoidal 75 A IRRM Peak repetitive reverse current tp 2 ps square F 1 kHz 1 A PARM Repetitive peak avalanche power tp 1ys Tj 25 C 6600 W Tstg Storage temperature range 65 to 175 C Tj Maximum operating junction temperature 1 175 C dV dt Critical rate of rise of reverse voltage 10000 V us 1 S lt Ri condition to avoid thermal runaway for a diode on its own heatsink June 2006 Rev 4 1 8 www st com Characteristics STPS15H100C 1 Charact
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5. 1 E 01 3 3 8 Characteristics STPS15H100C Figure 7 Reverse leakage current versus Figure 8 Junction capacitance versus reverse voltage applied typical reverse voltage applied typical values values IR mA C nF 1 E 01 0 Tj 150 C F 1MHz Vosc 30mV Tj 25 C 1 E 00 Tj 125 C 1 E 01 kalea eere 0 1 Tj 75 C 1 E 02 Tj 50 C 1 E 03 Tj 25 C t VR V VR 1 E 04 L 3 0 0 0 10 20 30 40 50 60 70 80 90 100 1 10 100 Figure 9 Forward voltage drop versus Figure 10 Thermal resistance junction to forward current ambient versus copper surface under tab epoxy printed board FR4 Cu 35um IFM A Rth j a C W 00 00 T 90 Maid an velis 80 70 Tj 125 C 60 40 Typical values vi i 85 dli ur dud 40 30 20 10 S cm 1 0 0 0 0 2 0 4 0 6 0 8 1 0 1 2 1 4 1 6 0 2 4 6 8 10 12 14 16 18 20 4 8 ky STPS15H100C Package Information 2 x
6. 9 0 25 50 75 100 125 150 175 Figure 3 Normalized avalanche power derating versus pulse duration Figure 4 Normalized avalanche power derating versus junction temperature PARM tp Panw 1us PARM tp T Parm 25 C 0 1 0 01 0 4 0 2 vim 0 1 1 10 0 001 0 01 100 1000 iii 50 75 100 125 150 Figure 5 Non repetitive surge peak forward current versus overload duration maximum values IM A ea t s N o L L tcr z pi SSK 1 E 02 1 E 01 1 E 00 Relative variation of thermal impedance junction to case versus pulse duration Zth j c Rth j c Figure 6 1 0 0 9 0 8 0 7 0 6 0 5 0 4 0 3 s 0 1 3 H 0 2 H 01 Single pulse tp s H prr ot 0 0 1 E 03 1 E 02
7. D 6 6 20 0 236 0 244 ML E 6 40 6 60 0 252 0 260 e 2 28 0 090 c G 440 4 60 0 173 0 181 _ Tas H 16 10 0 634 L 9 9 40 0 354 0 370 L1 0 8 1 20 0 031 0 047 L2 0 80 1 0 031 0 039 V1 10 10 3 6 8 STPS15H100C Ordering Information 3 Ordering Information Ordering type Marking Package Weight Base qty Delivery mode STPS15H100CB 15H100 DPAK 0 30 g 75 Tube STPS15H100CB TR 15H100 DPAK 0 30 g 2500 Tape andreel STPS15H100CH S15H100CH IPAK 0 35 g 75 Tube Revision History Date Revision Changes Mar 2004 3 Last issue 08 Jun 2006 4 Reformatted to current standard Added IPAK 7 8 STPS15H100C Please Read Carefully Information in this document is provided solely in connection with ST products STMicroelectronics NV and its subsidiaries ST reserve the right to make changes corrections modifications or improvements to this document and the products and services described herein at any time without notice All ST products are sold pursuant to ST s terms and conditions of sale Purchasers are solely responsible for the choice selection and use of the ST products and services described herein and ST assumes no liability whatsoever relating to the choice selection or use of the ST products and services described herein No license express or implied by estoppel or otherwise to any intellectual property
8. eristics Table 2 Thermal resistance Symbol Parameter Value Unit Per diode Haec Junction to case Total 2 4 C W Rayo Coupling 0 7 When the diodes 1 and 2 are used simultaneously A Tj diode 1 P diode1 x Rinj c Per diode P diode 2 x Rino Table 3 Static electrical characteristics per diode Symbol Parameter Test Conditions Min Typ Max Unit T 25 C 3 HA Ig Reverse leakage current Vn VRRM Tj 125 C 1 3 4 mA Tj 25 C I 7 5 A 0 8 Tj 125 C lp27 5A 0 62 0 67 Tj 25 C Ip 12A 0 85 Ve 1 Forward voltage drop V Tj 125 C Ip 12A 0 68 0 73 Tj 25 C lpz 15A 0 89 Tj 125 C lp2 15A 0 71 0 76 1 Pulse test tp 380 us lt 2 To evaluate the conduction losses use the following equation P 0 58 x IF AV 0 012 IF aus 2 8 ky STPS15H100C Characteristics Figure 1 Conduction losses versus average Figure 2 Average forward current versus current ambient temperature 6 0 5 PF av W IF av A 7 9 6 0 5 8 Rth j a Rth j c 6 7 5 6 0 2 8 0 1 8 1 B 4 5 0 05 3 4 3 Rth j a 70 C W 2 T 4 2r L i FU 1 AR Tamb C 4 amb IF av A pu al Sep Hip 0 1 2 3 4 5 6 7 8
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ST STPS15H100C handbook