ST STTH3003CW handbook
Contents
1. 6 4 2 1 11 diF dt A us 0 il l ll 1 0 50 100 150 200 250 300 350 400 450 500 Fig 6 Softness factor versus dlr dt typical values per diode S factor 0 60 VR 200V 0 50 Tj 125 C 7 0 40 0 30 0 20 0 10 dIF dt A ps 0 00 0 50 100 150 200 250 300 350 400 450 500 3 5 STTH3003CW Fig 7 Relative variation of dynamic parameters versus junction temperature reference Tj 125 C TCC 5 50 75 100 125 9 CO COO OF Se e ce IO wo NARWONMAHHO m Fig 9 Forward recovery time versus dlr dt 90 confidence per diode tfr ns 500 450 VFR 1 1 VF max 400 Tas 350 300 250 200 150 100 50 diF dt A us 0 1 1 1 1 1 0 50 100 150 200 250 300 350 400 450 500 4 5 Fig 8 Transient peak forward voltage versus dlE dt 90 confidence per diode VFP V O NM WH TDN CD dIF dt A ps ji ll 1 0 50 100 150 200 250 300 350 400 450 500 STTH3003CW PACKAGE2. GROUP OF COMPANIES Australia Brazil China Finland France Germany Hong Kong India Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom U S A http www st com 5 5
3. MECHANICAL DATA TO 247 Milmeters Inches P uu A S88 BEER ee D 220 260 0086 0 102 E 040 0 80 0015 0 081 F 100 140 0 039 0 055 mo F4 Dia Co m Bl Jellal Jol a e m ef ds elo ow al IZIS o o of glo la to eo eo eo w w aI allal lel e e c9 Ol milo oO Ordering code Marking Package Weight Baseqty _ Delivery mode STTH3008CW STTH3008CW TO 247 4 36g Tube m Cooling method by conduction C m Recommended torque value 0 8 N m a Maximum torque value 1 0 N m m Epoxy meets UL 94 VO Information furnished is believed to be accurate and reliable However STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics Specifications mentioned in this publication are subject to change without notice This publication supersedes and replaces all information previously supplied STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap proval of STMicroelectronics The ST logo is a registered trademark of STMicroelectronics 1999 STMicroelectronics Printed in Italy All rights reserved STMicroelectronics
4. ky STTH3003CW HIGH FREQUENCY SECONDARY RECTIFIER MAJOR PRODUCT CHARACTERISTICS d x tA 300 V Tj max 175 C wma Am FEATURES AND BENEFITS a COMBINES HIGHEST RECOVERY AND REVERSE VOLTAGE PERFORMANCE a ULTRA FAST SOFT AND NOISE FREE RECOVERY DESCRIPTION Dual center tap Fast Recovery Epitaxial Diodes suited for Switch Mode Power Supply and high frequency DC to DC converters Packaged in TO 247 this device is intended for secondary rectification ABSOLUTE RATINGS limiting values per diode IF AV Average forward current Tc 135 C Per diode 15 A c Storage temperature range 65 175 Maximum operating junction temperature October 1999 Ed 5A 1 5 STTH3003CW THERMAL RESISTANCES STATIC ELECTRICAL CHARACTERISTICS per diode fe eee Reverse leakage Vr 300 V mec pA iii Tise 40 400 Forward voltage drop Ir 2 15A mec 12 me 08 Pulse test tp 5 ms 6 296 tp 380 us 6 lt 2 To evaluate the maximum conduction losses use the following equation P 0 75 x lr av 0 017 IE RMs RECOVERY CHARACTERISTICS ERE Tests conditions me Irr 0 25 A IR 2 1A Tj lIF2 1A dlr dt 50 IF 1A diridt 50 Alus Va 30V VR 30V lF 15A dlrE dt 100 A us Tj 25 C EX cde 1x VF max Stactor_ Vcc2200V p 15A Tj 125 C ow dlr dt 200A us Pes ya 2 5 STTH3003CW Fig 1 Conduction losses versus average cur
5. rent per diode P1 W 8 0148 021 5 05 s IF av A tp T fi 0 2 4 6 8 10 12 14 16 18 20 Fig 3 Relative variation of thermal impedance junction to case versus pulse duration Zth j c Rth j c 1 0 0 8 M 0 158 0 2 Single pulse E f tp s B tp T tp ii if 0985 1E 2 1E 1 1E 0 Fig 5 Reverse recovery time versus dlr dt 90 confidence per diode trr ns 100 80 60 40 F 0 5 IF av diF dt A us 20 0 0 50 100 150 200 250 300 350 400 450 500 ky Fig 2 Forward voltage drop versus forward current maximum values per diode IFM A 200 100 D a a Tj 125 C ae e TD Re 25 C 10 da Tj 75 C zz va FIN ry VEMO 1 P 0 50 0 75 1 00 1 25 1 50 1 75 2 00 2 25 2 50 Fig 4 Peak reverse recovery current versus dlE dt 9096 confidence per diode IRM A IF 2 IF av MEER 12 IF IF av 10 M 8 IF 0 5 IF av
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ST STTH3003CW handbook