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ST STPS15L25D/G handbook

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1. Single pulse t s 0 0 LLL 1 0E 3 1 0E 2 PT TTP 1 0E 1 1 0E 0 Fig 8 Junction capacitance versus reverse voltage applied typical values C nF 5 0 F 1MHz Tj 25 C 1 0 VR V 0 1 RD 1 2 5 10 20 30 Fig 10 Thermal resistance junction to ambient versus copper surface under tab Epoxy printed circuit board FR4 copper thickness 35 um STPS15L25G only Rth j a C W 10 S Cu cm 0 4 8 12 16 20 24 28 32 36 40 3 5 STPS15L25D G PACKAGE MECHANICAL DATA D PAK DIMENSIONS Millimeters Inches Min Max Min Max 4 40 4 60 0 173 0 181 A2 2 0 MIN FLAT ZONE R 0 40 typ 0 016 typ 8 HN V2 0 8 0 FOOT PRINT DIMENSIONS in millimeters COOLING METHOD BY CONDUCTION 5 METHOD C 10 30 __ 5 08 4 5 PACKAGE MECHANICAL DATA TO 220AC STPS15L25D G DIMENSIONS 0 49 0 70 0 019 0 61 0 88 0 024 0 044 0 194 0 393 1640tp 16 40 typ 0 511 2 65 2 95 0 104 15 25 15 75 0 600 6 20 6
2. ky STPS15L25D G LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS FEATURES VERY LOW FORWARD VOLTAGE DROP FOR LESS POWER DISSIPATION AND RE DUCED HEATSINK OPTIMIZED CONDUCTION REVERSE LOSSES TRADE OFF WHICH MEANS THE HIGHEST A EFFICIENCY IN THE APPLICATIONS TO 220AC D PAK AVALANCHE CAPABILITY SPECIFIED STPS15L25D STPS15L25G DESCRIPTION Single Schottky rectifier suited for Switched Mode Power Supplies and high frequency DC to DC converters Vrms Packaged in TO 220AC or D PAK this device is especially intended for use as a Rectifier at the secondary of 3 3V SMPS and DC DC units ABSOLUTE RATINGS limiting values Parameter Value Unit Repetitive peak reverse voltage 25 V RMS forward current 30 A Average forward current Tc2145 C 6820 5 15 A dew Surge non repetitive forward current tp 10ms Sinusoidal Repetitive peak reverse current tp 2us square F 1kHz Non repetitive peak reverse current tp 100us square PARM Repetitive peak avalanche power tp 1us Tj 25 C 9000 W Tstg Storage temperature range 65to 150 C Tj Maximum operating junction temperature 150 C dV dt Critical rate of rise of reverse voltage 10000 V us dPtot 1 i thermal runaway condition for a diode on its own heatsink dTj Rth j a July 2003 Ed 5B 1 5 STPS15L25D G THERMAL RESISTANCES Symbol Parameter Value Unit STATIC ELECTRICAL CHARACTE
3. junction temperature PARM tp PARM tp Parm 1ps PARM 25 C 1 0 1 0 8 0 6 0 01 0 4 0 2 0 001 tp us 0 Teo 0 01 0 1 1 10 100 1000 0 25 50 75 100 125 150 25 ky Fig 5 Non repetitive surge peak forward current versus overload duration maximum values IM A 0 1E 3 1E 2 1E 1 1E 0 Fig 7 Reverse leakage current versus reverse voltage applied typical values IR mA 1E 3 im Tj 150 C 1E42 Tj 125 C 1E 1 1E 0 Tj 25 C i 1E 1 VR V 1E 2 0 Fig 9 Forward voltage drop versus forward current maximum values IFM A A 100 0 Typical values aT Tj150C prod M 10 0 7 s Tj 125 C m Tj 29 C 1 0 Hi VFM V 00 02 04 06 08 10 12 14 STPS15L25D G Fig 6 Relative variation of thermal impedance junction to case versus pulse duration Zth j c Rth j c o o fo
4. 60 0 244 3 50 3 93 0 137 M 2 6 typ 0 102 typ Diam 1 375 3 85 0 147 0 151 COOLING METHOD C RECOMMENDED TORQUE VALUE 0 55 M N MAXIMUM TORQUE VALUE 0 70 M N Ordering type Marking Package Weight Base qty pois STPS15L25D STPS15L25D TO 220AC 1 86g 50 Tube STPS15L25G STPS15L25G D PAK 1 48g 50 Tube STPS15L25G TR STPS15L25G D PAK 1 489 1000 Tape amp reel EPOXY MEETS UL94 V0 Information furnished is believed to be accurate and reliable However STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics Specifications mentioned in this publication are subject to change without notice This publication supersedes and replaces all information previously supplied STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics The ST logo is a registered trademark of STMicroelectronics STMicroelectronics GROUP OF COMPANIES 2003 STMicroelectronics Printed in Italy All rights reserved Australia Brazil Canada China Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Singa
5. RISTICS Parameters Test conditions Reverse leakage current Tj 25 C VR VRRM Tj 125 C Forward voltage drop Tj 25 C lr 15A Tj 125 C 25 C Tj 125 C Pulse test tp 380 us 6 lt 2 To evaluate the maximum conduction losses use the following equation P 0 24 x Ir Av 0 0073 IF RMs Fig 1 Average forward power dissipation versus Fig 2 Average forward current versus ambient average forward current temperature 6 0 5 PF av W IF av A 9 8 01 L 5 02 7 8 905 i i 8 0 5 14 Rth j a Rth j c 6 Y X 12 5 10 A 4 8 1 B Rth j a 50 C W 3 6 2 ML 4b 1 m 2r IF av A Ser r9 el L 8ep T tip Tamb C 0 1 l 0 L i fi o no AR o 8 10 12 14 16 0 25 50 75 100 125 150 Fig 3 Normalized avalanche power derating Fig 4 Normalized avalanche power derating versus pulse duration versus
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