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ST STPS130 handbook

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1. IR HA 5E 3 1E43 Ti 125 C 1E 2 T 70 C 1E 1 1E 0 Tj 25 C VR V 1E 1 0 5 10 15 20 25 30 Figure 6 Non repetitive surge peak forward current versus overload duration maximum values SMB IM A 8 4 i a 2 2 4 1 4 a Ta 100 C N IIT z FE SSS SS NEI t s 1 0E 3 1 0E 2 1 0E 1 1 0E 0 Figure 8 Relative variation of thermal impedance junction to ambient versus pulse duration epoxy printed circuit board e Cu 35um recommended pad layout SMB Zth j c Rth j c 1 0 0 8 0 6 0 4 5 0 2 T 0 2 8 0 1 Single pulse i tels une TT 1 0E 2 1 0E 1 1 0E 0 1 0E 1 1 0E 2 1 0E 3 Figure 10 Junction capacitance versus reverse voltage applied typical values C pF 500 F 1MHz Tj 25 C 200 100 50 20 VR V 3 7 STPS130 Figure 11 Forward voltage drop versus forward current maximum values IFmM A 0
2. Tj 125 C Figure 13 Thermal resistance junction to ambient versus copper surface under each lead Epoxy printed circuit board FR4 copper thickness 35um SMB Rth j a C W 0 S Cu cm 0 1 2 3 4 5 4 7 Figure 12 Thermal resistance junction to ambient versus copper surface under each lead Epoxy printed circuit board FR4 copper thickness 35m SMA Rth j a C W 20 P 1 5W 100 S Cu cm 0 1 2 3 4 5 STPS130 Figure 14 SMA Package Mechanical Data DIMENSIONS REF Millimeters Inches Max 0 080 0 008 1 65 0 049 0 065 0 41 0 016 0 189 0 220 0 156 0 181 0 089 0 116 0 063 Figure 15 SMA Foot Print Dimensions in millimeters 4 1 45 2 40 1 45 5 7 STPS130 Figure 16 SMB Package Mechanical Data El o DIMENSIONS REF Millimeters Inches Min Max Min Max A1 1 90 2 45 0 075 0 096 A2 0 05 0 20 0 002 0 008 b 1 95 2 20 0 077 0 087 C 0 15 0 41 0 006 0 016 E 5 10 5 60 0 201 0 220 E1 4 05 4 60 0 159 0 181 D 3 30 3 95 0 130 0 156 L 0 75 1 60 0 030 0 063 Figure 17 SMB Foot Print Dimensions in millimeters 2
3. STPS130 POWER SCHOTTKY RECTIFIER Table 1 Main Product Characteristics F AV 1A Vann 30 V Ti max 150 C Ve max 0 46 V FEATURES AND BENEFITS m Very low forward voltage drop for less power dissipation m Optimized conduction reverse losses trade off which means the highest yield in the applications m Surface mount miniature packages m Avalanche capability specified DESCRIPTION Single Schottky rectifier suited to Switched Mode Power Supplies and high frequency DC to DC converters Packaged in SMA and SMB this device is especially intended for use in parallel with MOSFETs in synchronous rectification and low voltage secondary rectification Table 3 Absolute Ratings limiting values Symbol Parameter SMA JEDEC DO 214AC STPS130A SMB JEDEC DO 214AA STPS130U Table 2 Order Codes Part Number Marking STPS130A 130 STPS130U G12 Varm Repetitive peak reverse voltage lerms RMS forward voltage IF av Average forward current TL 130 C 0 5 lsm Surge non repetitive forward current tp 10ms sinusoidal IRRm Repetitive peak reverse current tp 2us F 1kHz square Irsm Non repetitive peak reverse current tp 100us square Parm Repetitive peak avalanche power tp 1us Tj 250 1200 Tstg Storage temperature range 65 to 150 Tj Maximum operating junction temperature 150 dV
4. 3 1 52 2 75 1 52 6 7 STPS130 Table 6 Ordering Information Ordering type Marking Package Weight Base qty Delivery mode STPS130A 130 SMA 0 068 g 5000 Tape amp reel STPS130U G12 SMB 0 107 g 2500 Tape amp reel m Band indicates cathode m Epoxy meets UL94 VO Table 7 Revision History Date Revision Description of Changes Jul 2003 4A Last update SMA package dimensions update Reference A1 max Aug 2004 5 changed from 2 70mm 0 106inc to 2 03mm 0 080 Information furnished is believed to be accurate and reliable However STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics Specifications mentioned in this publication are subject to change without notice This publication supersedes and replaces all information previously supplied STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners 2004 STMicroelectronics All rights reserved STMicroelectronics group of companies Aus
5. forward current versus ambient temperature 0 5 IF Av A 1 2 Rith a Rin t Ring a 100 C W T 0 2 KE Tamb C 0 0 i 0 25 50 75 100 125 150 Figure 4 Normalized avalanche power derating versus junction temperature PARM tp R Parm 25 C TIC STPS130 Figure 5 Non repetitive surge peak forward current versus overload duration maximum values SMA Im A z0 5 t s 1 0E 3 1 0E 2 1 0E 1 1 0E 0 Figure 7 Relative variation of thermal impedance junction to ambient versus pulse duration epoxy printed circuit board e Cu 35um recommended pad layout SMA Zth j c Rth j c 0 0 8 0 6 0 4 5 0 2 0 2 5 0 1 i single pulse tp s SripT tp 0 0 Liri 1E 2 1E 1 1E 0 1E 1 1E 2 1E 3 Figure 9 Reverse leakage current versus reverse voltage applied typical values
6. dt Critical rate of rise of reverse voltage dPtot _ 1 aTj RthG a August 2004 thermal runaway condition for a diode on its own heatsink REV 5 10000 1 7 STPS130 Table 4 Thermal Resistance Symbol Parameter Value Unit SMA 30 R i H o th j l Junction to lead SMB 23 C W Table 5 Static Electrical Characteristics Symbol Parameter Tests conditions Min Typ Max Unit In R leak pl R everse leakage Curren 1 125 C Tj 25 C Forward voltage drop tp 380 us 6 lt 2 tp 5 ms 6 lt 2 Pulse test IF 1A Tj 125 C T 25 C Tj 125 C To evaluate the conduction losses use the following equation P 0 37 x IF AV 0 090 IF RMS Figure 1 Average forward power dissipation versus average forward current PF Av W 0 6 T 5 0 05 43501 0 2 3 05 0 5 Y 0 4 5 1 0 3 0 2 0 1 4 IF AVX A tp T tp 7 0 0 L I L 0 0 0 2 0 4 0 6 0 8 1 0 1 2 Figure 3 Normalized avalanche power derating versus pulse duration PaRM tp Parm 1ps i 0 1 0 001 tp us 0 01 0 1 1 10 100 1000 2 7 Figure 2 Average
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