ST STRH40P10 handbook
Contents
1. Electrical characteristics curves STRH40P10 4 Electrical characteristics curves Figure 4 Safe operating area Figure 5 Thermal impedance ID HV32530v1 K ZTH_HPOJ A Tj 150 C 6 0 Tc 25 C 1 Sinlge 0 2 en Operation in this area is pulse 1 Limited by max Ros on 100us 407 07 05 10 Lis 0 02 Zw K Rinse s tp t 10ms 1872 FA 0 0 1 L_ SINGLE PULSE jl DC operation T 0 1 1073 0 1 1 10 100 Vps V 103 g ome 1072 14071 tP s Figure 6 Output characteristics Figure 7 Transfer characteristics HV32500v1 HV32505v1 ID ID A A 149 Vas 12V 100 120 100 5V 80 80 60 69 40 40 4V 20 20 0 0 0 5 10 15 Vos V 0 2 4 6 8 10 Ves V Figure 8 Gate charge vs gate source voltage Figure 9 Capacitance variations VGs HV32510v1 C HV32520v1 V pF 1 10 6100 S 5100 Ciss 4100 6 3100 S 2100 Ip 34 A Crss 2 p2. The accept reject criteria are e SEB test drain voltage checked trigger level is set to Vgs 5 V Stop condition as soon as a SEB occurs or if the fluence reaches 3e 5 ions cm e SEGR test the gate current is monitored every 200 ms A gate stress is performed before and after irradiation Stop condition as soon as the gate current reaches 100 nA during irradiation or during PIGS test or if the fluence reaches 3e 5 ions cm The results are noSEB SEGR test produces the following SOA see Table 12 Single event effect SEE safe operating area SOA and Figure 2 Single event effect SOA Table 12 Single event effect SEE safe operating area SOA lon Vps V Energy Range ps V Let Mev mg cm MeV pm Vgg 0 Ves 2V Ves 5V GVgg 10V Vgg 15V 768 94 S 60 756 92 7 S 20 32 8 18 Doc ID 18354 Rev 6 ky STRH40P10 Radiation characteristics Figure 2 Single event effect SOA 100 90 e Kr 32 MeV cm mg L 15 eo on eo Vgs V Figure 3 Single event effect bias circuit Vgs R4 R3 270 270 C4 a Bias condition during radiation refer to Table 12 Single event effect SEE safe operating area SOA ky Doc ID 18354 Rev 6 9 18
3. GI STRH40P10 Rad Hard P channel 100 V 34 A Power MOSFET Features Vepss Ip Rps on Qy A m Fast switching N A m 100 avalanche tested AS S NS 3 m Hermetic package 2 m 100 krad TID TO 254AA m SEE radiation hardened Applications m Satellite Figure 1 Internal schematic diagram m High reliability D 1 Description This P channel Power MOSFET is developed with STMicroelectronics unique STripFET process It has specifically been designed to sustain high G 3 TID and provide immunity to heavy ion effects O iii O s 2 Table 1 Device summary ESCC part Guality Lead Part number number level Package finish Mass g Temp range EPPL STRH40P10HY1 Engineering I model TO 254AA Gold 10 55 to 150 C STRH40P10HYG TBD ESCC flight Target Note Contact ST sales office for information about the specific conditions for product in die form and for other packages November 2011 Doc ID 18354 Rev 6 1 18 www st com Contents STRH40P10 Contents 1 Electrical ratings i iia i i a 8 Z8 3 2 Electrical characteristics eeeeeeeeeeeeeeeeeeeeeeeeeee 5 3 Radiation characteristics eeeeeeeeeeeeeeeeeeeeeeeeeeee 7 4 Electrical characteristics curves eee 10 5 Test CWUCUNG usa goce dc donee NR N RR RERO EC e eee 12 6 Package mechanical data suss esses 13 7 9g qe MIC edF 16 8 REVISION
4. 0 Veg 12 V 1 5 BVpss ue un breakdown Ves 0 lp 1 mA 4596 V Vas th Gate threshold voltage Vps Vas lp 1 mA 150 th DS VGS D RDS on Static drain source on resistance Ves 10 V ln 2 20A 4 35 Q on GS D Table 10 Dynamic post irradiation T 25 C Co60 y rays 100 K Rad Si 1 Symbol Parameter Test conditions Drift values A Unit Og Total gate charge 15 5 Ig 1mMA Veg 12 V Ro o Qgs Gate source charge Vee sU si 5 200 nC Qoa Gate drain charge 10 100 1 Parameter not measured after irradiation but guaranteed by the results obtained during the evaluation phase that proves this parameter is directly correlated to the Vas tn shift ky Doc ID 18354 Rev 6 7 18 Radiation characteristics STRH40P10 Table 11 Source drain diode post irradiation T jz 25 C Co60 y rays 100 K Rad Si Symbol Parameter Test conditions Drift values A Unit Van Forward on voltage Isp 40 A Vas 0 5 V 1 Referto Figure 16 2 Pulsed pulse duration 300 us duty cycle 1 5 Single event effect SOA The technology of the STMicroelectronics rad hard Power MOSFETs is extremely resistant to heavy ion environment for single event effect irradiation per MIL STD 750E method 1080 bias circuit in Figure 3 Single event effect bias circuit SEB and SEGR tests have been performed with a fluence of 3e 5 ions cm
5. E 1133 mJ starting T 225 C Ip 17 A Vpp 50 V Single pulse avalanche ener Eas SEE d 332 mJ starting Tj 110 C Ip 17 A Vpp 50 V 4 Doc ID 18354 Rev 6 3 18 Electrical ratings STRH40P10 4 18 Table 4 Avalanche characteristics continued Symbol Parameter Value Unit Repetitive avalanche Vag 50 V lan 24 A f 100 KHz Ty 25 C 25 duty cycle 10 Ear mJ Repetitive avalanche Vaa 50 V lar 17 A f 100 KHz Ty 110 8 C duty cycle 10 1 Maximum rating value Doc ID 18354 Rev 6 ky STRH40P10 Electrical characteristics 2 Note 4 Electrical characteristics Tc 25 C unless otherwise specified For the P channel MOSFET actual polarity of voltages and current has to be reversed Pre irradiation Table 5 Pre irradiation on off states Symbol Parameter Test conditions Min Typ Max Unit Zero gate voltage drain I DSS current Ves 0 80 EN Dss BA I Gate body leakage current Vess 20 V 100 nA GSS Vpg 0 Ves 20 V 100 nA Drain to source breakdown 1 BVpss voltage Vas 0 Ip 1 mA 100 V Vasith Gate threshold voltage Vps Vas lp 1 mA 2 4 5 V Static drain source on R Ip k DS on resistance Ves 12 V Ip 17A 0 060 0 075 Q 1 This rating is guaranteed T 25 C see Figure 10 Norma
6. history cg S cece N N RR toes he Rcs a R eee 17 2 18 Doc ID 18354 Rev 6 r STRH40P10 Electrical ratings Note Electrical ratings Tc 25 C unless otherwise specified For the P channel MOSFET actual polarity of voltages and current has to be reversed Table 2 Absolute maximum ratings pre irradiation Symbol Parameter Value Unit Vps Drain source voltage Vas 0 100 V Vas Gate source voltage 20 V Ip 3 Drain current continuous 34 A Ip 9 Drain current continuous at To 100 C 21 A IDM 4 Drain current pulsed 136 A Prot Total dissipation 176 W dv dt 9 Peak diode recovery voltage slope 2 5 V ns Tag Storage temperature C 55 to 150 Ty Operating junction temperature C 1 This rating is guaranteed T 25 C see Figure 10 Normalized BVpss vs temperature 2 This value is guaranteed over the full range of temperature 3 Rated according to the Rthj case Rthc s 4 Pulse width limited by safe operating area 5 Isp 40 A di dt 100 A us Vpp 80 V BR DSS Table 3 Thermal data Symbol Parameter Value Unit Rihj case Thermal resistance junction case max 0 71 C W Rthe s Case to sink typ 0 21 C W Table 4 Avalanche characteristics Symbol Parameter Value Unit Avalanche current repetitive or not repetitive lan NAE TBD A pulse width limited by Tj max Single pulse avalanche ener East aa
7. 17A 1100 lp 85A Coss 0 100 0 20 60 100 140 Og nC 0 20 40 60 80 Vps V 10 18 Doc ID 18354 Rev 6 ky STRH40P10 Electrical characteristics curves Figure 10 Normalized BVpss vs temperature Figure 11 Static drain source on resistance HV32540 DSS norm 1 3 0 9 08 T50 0 50 100 150 T CC HV32570 R pston mo 80 70 60 50 40 ILA Figure 12 Normalized gate threshold voltage Figure 13 Normalized on resistance vs vs temperature temperature HV32550 HV32560 Ves th Ros on norm Ipz 1 mA norm Vesz 12V Ip 20A 1 1 2 40 1 0 2 00 0 9 1 60 0 8 1 20 0 7 0 80 si eno ee Pe 0 40 oe 50 0 50 100 150 TJCC 50 0 150 TC Figure 14 Source drain diode forward characteristics HV32580 0 10 20 30 40 Iso A ky Doc ID 18354 Rev 6 11 18 Test circuits STRH40P10 5 Test circuits Figure 15 Switching times test circuit for resistive load 1 Ld Ry 2200 3 3 pr p Vpp EE Vp 0 9 EN Ves R G E ds A D U T Ex h Pw e e e C059
8. 90 1 Max driver Vas slope 1V ns no DUT Figure 16 Source drain diode lem Body Diode Forward Curent di dt Ly 10 of IRM Body Diode Reverse Current IRM RE U XL K 12 18 Doc ID 18354 Rev 6 ky STRH40P10 Test circuits Figure 17 Unclamped inductive load test circuit single pulse and repetitive C05970 Doc ID 18354 Rev 6 13 18 Package mechanical data STRH40P10 6 14 18 Package mechanical data In order to meet environmental requirements ST offers these devices in different grades of ECOPACK packages depending on their level of environmental compliance ECOPACK specifications grade definitions and product status are available at www st com ECOPACK is an ST trademark Table 13 TO 254AA mechanical data mm Inch Dim Min Typ Max Min Typ Max A 13 59 13 84 0 535 0 545 B 13 59 13 84 0 535 0 545 C 20 07 20 32 0 790 0 800 D 6 32 6 60 0 249 0 260 E 1 02 1 27 0 040 0 050 F 3 56 3 81 0 140 0 150 G 16 89 17 40 0 665 0 685 H 6 86 0 270 I 0 89 1 02 1 14 0 035 0 040 0 045 J 3 81 0 150 K 3 81 0 150 L 12 95 14 50 0 510 0 571 M 2 92 3 18 N 0 71 R1 1 00 0 039 R2 1 52 1 65 1 78 0 060 0 065 0 070 Doc ID 18354 Rev 6 Si STRH40P10 Package mechanical data Figure 18 TO 254AA drawing D
9. T IN PERSONAL INJURY DEATH OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE ST PRODUCTS WHICH ARE NOT SPECIFIED AS AUTOMOTIVE GRADE MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER S OWN RISK Resale of ST products with provisions different from the statements and or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever any liability of ST ST and the ST logo are trademarks or registered trademarks of ST in various countries Information in this document supersedes and replaces all information previously supplied The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners 2011 STMicroelectronics All rights reserved STMicroelectronics group of companies Australia Belgium Brazil Canada China Czech Republic Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Philippines Singapore Spain Sweden Switzerland United Kingdom United States of America www st com 18 18 Doc ID 18354 Rev 6 ky
10. ent Vpp 12 V Ty 150 C 133 A 1 Refer to the Figure 16 2 Pulse width limited by safe operating area 3 Pulsed pulse duration 300 us duty cycle 1 5 4 Not tested in production guaranteed by process 6 18 Doc ID 18354 Rev 6 SI STRH40P10 Radiation characteristics 3 Radiation characteristics The technology of the STMicroelectronics rad hard Power MOSFETs is extremely resistant to radiative environments Every manufacturing lot is tested for total ionizing dose irradiation done according to the ESCC 22900 specification window 1 using the TO 3 package Both pre irradiation and post irradiation performances are tested and specified using the same circuitry and test conditions in order to provide a direct comparison Tamb 22 3 C unless otherwise specified Total dose radiation TID testing One bias conditions using the TO 3 package Veg bias 20 V applied and Vps 100 V during irradiation The following parameters are measured see Table 9 Table 10 and Table 11 e before irradiation e after irradiation e after 24 hrs room temperature e after 168 hrs 100 C anneal Table 9 Post irradiation on off states Tj 25 C Co60 y rays 100 K Rad Si Symbol Parameter Test conditions Drift values A Unit Zero gate voltage drain current Ipss V 9 0 9 8096 BVpss 1 yA Gs Gate body leakage current Veg 12V 1 5 lass un UA Vps
11. lized BVpss vs temperature Table 6 Pre irradiation dynamic Symbol Parameter Test conditions Min Typ Max Unit ER Te 3710 4640 5570 pF 1 Output capacitance Vas 0 Vps 25 V Coss R Cais f 1 MHz 510 635 760 pF Ceg ee S 204 255 306 pF capacitance Q Total gate charge 130 162 194 nC Q Gate to source charge Vpp 50 V Ip 34A 14 18 22 nte gs es ip SN Vac 12 V On Gate to drain Miller GS 32 40 48 nC 9 charge f 1MHz gate DC bias 0 Rg Gate input resistance test signal level 20mV 1 5 Q open drain 1 Not tested guaranteed by process Table 7 Pre irradiation switching times Symbol Parameter Test conditions Min Typ Max Unit lion Turn on delay time 15 24 33 ns ty Rise time Vpp 50 V Ip 17 A 19 31 43 ns tof Turn off delay time Rg 247 Q Veg 12V 68 129 190 ns tr Fall time 34 46 58 ns Doc ID 18354 Rev 6 5 18 Electrical characteristics STRH40P10 Table 8 Pre irradiation source drain diode 1 Symbol Parameter Test conditions Min Typ Max Unit iss Source drain current 34 n I 2 Source drain current 136 A SDM pulsed Van Forward on voltage Isp 30 A Vas 0 1 1 V 1 09 Reverse recovery time Isp 34 A 276 845 414 ns Q 9 Reverse recovery charge di dt 40 A us 4 1 HC lag Reverse recovery current Vpp 12V Tj 25 C 316 A t Reverse recovery time Isp 34 A 473 ns Q 9 Reverse recovery charge di dt 40 A us 7 1 HC IRrm Reverse recovery curr
12. oc ID 18354 Rev 6 15 18 Order codes STRH40P10 7 Order codes Table 14 Ordering information ESCC part Quality Lead 3 Order code number level EPPL Package finish Marking Packing STRH40P10HY1 elea al Strip model TO 254AA Gold TBD min STRH40P10HYG TBD ESCC flight Target Contact ST sales office for information about the specific conditions for products in die form and for other packages 16 18 Doc ID 18354 Rev 6 STRH40P10 Revision history 8 Revision history Table 15 Document revision history Date Revision Changes 23 Dec 2010 1 First release 02 Feb 2011 2 Updated Figure 1 03 May 2011 3 Updated Figure 1 22 Jun 2011 4 Updated features on coverpage Updated order codes in Table 1 Device summary and Table 14 25 Jul 2011 5 Ordering information Minor text changes Updated dynamic values on Table 6 Pre irradiation dynamic 09 Nov 2011 6 Table 7 Pre irradiation switching times and Table 8 Pre irradiation source drain diode 4 Doc ID 18354 Rev 6 17 18 STRH40P10 Please Read Carefully Information in this document is provided solely in connection with ST products STMicroelectronics NV and its subsidiaries ST reserve the right to make changes corrections modifications or improvements to this document and the products and services described herein at any time without notice All ST products are sold pursuant
13. to ST s terms and conditions of sale Purchasers are solely responsible for the choice selection and use of the ST products and services described herein and ST assumes no liability whatsoever relating to the choice selection or use of the ST products and services described herein No license express or implied by estoppel or otherwise to any intellectual property rights is granted under this document If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY FITNESS FOR A PARTICULAR PURPOSE AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION OR INFRINGEMENT OF ANY PATENT COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES ST PRODUCTS ARE NOT RECOMMENDED AUTHORIZED OR WARRANTED FOR USE IN MILITARY AIR CRAFT SPACE LIFE SAVING OR LIFE SUSTAINING APPLICATIONS NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESUL
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ST STRH40P10 handbook