ST 2ST3360 handbook
Contents
1. Package mechanical data 2ST3360 Table 6 Ceramic leadless chip carrier 6 mechanical data mm inch Dim Min Typ Max Min Typ Max A 1 53 1 96 060 077 C 0 78 0 89 0 99 031 035 039 D 1 52 1 65 1 78 060 065 070 E 1 24 1 40 1 55 049 055 059 F 5 77 5 84 5 92 227 230 233 G 4 19 4 31 4 45 165 170 175 6 10 6 22 6 35 240 245 250 L 0 56 0 63 0 71 022 025 028 M 3 86 3 94 4 01 152 155 158 N 1 14 1 27 1 40 045 050 055 N1 2 41 2 54 2 67 095 100 105 N2 0 64 0 89 1 14 025 035 045 r 0 23 009 D1 2 08 2 28 2 49 082 090 098 Figure 5 Dimensions for ceramic leadless chip carrier 6 A F D D1 G M N1 C N2 8 11 7098021 B Doc ID 022014 Rev 3 X 2ST3360 Order code 5 Order code Table 7 Ordering information ESCC PTS Order code part Quality Radiation Package Lea d Marking EPPL Packing level level finish number 2ST3360U1 gl ati LCC 6 Gold 2ST3360U1 Wafflepack 1 Contact an ST sales office for information regarding the specific conditions for tape and reel packing 4 Doc ID 022014 Rev 3 9 11 Revision history 2ST3360 6 10 11 Revision history Table 8 Document revision history Date Revision Changes 18 Jul 2011 1 Initial release 01 Feb 2012 2 Section 2 inserted 04 May 2012 Updated Vcg sa value and test condition in Table 4 Electrical characteristics for NPN and2. 17 2ST3360 Hi Rel NPN and PNP bipolar transistor 60 V 0 8 A Features Polarity BVcEo Ic max hee NPN 60 V 0 8A 160 PNP 60 V 0 8A 160 Hermetic package specifications Ic 1 A and Vog 2V High current gain characteristic Fast switching speed FT 130 MHz m 100 krad low dose rate Applications m Power MOSFET drivers Description Very low collector emitter saturation voltage Manufactured according to ESCC 5000 The 2ST3360 power bipolar transistor is a fast dual complementary device NPN and PNP housed in a single LCC 6 hermetic Hi Rel package specifically designed for aerospace Hi Rel applications Its radiation hardness allows key parameters such as gain and leakage current to stay at best in class post irradiation levels ST proprietary technology also results in a high degree of electrical performance for both transistors in the pair The high switching performance of each make this device particularly suitable for power MOSFET driver applications Table 1 Device summary Datasheet production data LCC 6 Figure 1 Internal schematic diagram Order code 2ST3360U1 ESCC part number Quality level Engineering model Radiation level Package LCC 6 Lead finish Gold Mass 0 20 g EPPL 1 Contact ST sales office for information about the specific conditions for
3. Table 5 Electrical characteristics for PNP lt Doc ID 022014 Rev 3 2ST3360 Please Read Carefully Information in this document is provided solely in connection with ST products STMicroelectronics NV and its subsidiaries ST reserve the right to make changes corrections modifications or improvements to this document and the products and services described herein at any time without notice All ST products are sold pursuant to ST s terms and conditions of sale Purchasers are solely responsible for the choice selection and use of the ST products and services described herein and ST assumes no liability whatsoever relating to the choice selection or use of the ST products and services described herein No license express or implied by estoppel or otherwise to any intellectual property rights is granted under this document If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCH
4. on Base emitter on voltage Vcg22V Ie 100 mA 650 MV V 2 Collector emitter lc 2 0 8A lg 40 mA 250 H CE sat saturation voltage lc 2A lg 100 mA 550 lc 100mA Vcog 2V 80 hee DC current gain S GE FE q lc 1A Vog 2V 160 400 Resistive load ta Delay time lc 2A Voc 2 10V 22 ns ti Rise time IB on IB ott 200 mA 54 ns ts Storage time VBE otf 5 V 360 ns t Fall time 42 ns fr Transition frequency lc201A Vggz 10V 130 MHz 1 For PNP type voltage and current values are negative 2 Pulse test pulse duration 300 us duty cycle 2 ky Doc ID 022014 Rev 3 5 11 Electrical characteristics 2ST3360 3 1 6 11 Test circuits Figure 3 Resistive load switching for NPN let gt Ves a DS10070 1 Fastelectronic switch 2 Non inductive resistor Figure 4 Resistive load switching for PNP let FBB 2 I DS10090 1 Fastelectronic switch 2 Non inductive resistor Doc ID 022014 Rev 3 ky 2ST3360 Package mechanical data 4 Package mechanical data In order to meet environmental requirements ST offers these devices in different grades of ECOPACK packages depending on their level of environmental compliance ECOPACK specifications grade definitions and product status are available at www st com ECOPACK is an ST trademark ky Doc ID 022014 Rev 3 7 11
5. tape and reel packing May 2012 Doc ID 022014 Rev 3 1 11 This is information on a product in full production www st com Contents 2ST3360 Contents 1 Absolute maximum ratings 00 eee ee 3 2 Pin configuration Lunar Sie aes aw A a Rea i 4 3 Electrical characteristics oossoo sn nahan eee 5 3 1 Test CIRCUITS lt osi sessi eR Rosa sin ee dead dda de dda ae Ea AUR S 6 4 Package mechanical data 2 000 c eee 7 5 Order code 9 6 REVISION HISIOPV ue x as sos s aci s n RCRCR ED D e a eae ees 10 2 11 Doc ID 022014 Rev 3 ky 2ST3360 Absolute maximum ratings Note 1 Absolute maximum ratings Table 2 Absolute maximum ratings Value Symbol Parameter Unit NPN PNP VcBo Collector base voltage lg O 60 60 V VcEo Collector emitter voltage lg 0 60 60 V VEBO Emitter base voltage Ic 0 6 6 V lc Collector current 0 8 0 8 A lom Collector peak current tp lt 5 ms 4 4 A lp Base current 0 2 0 2 A IBM Base peak current tp lt 5 ms 0 4 0 4 A Prot Total dissipation at Tamp 25 C 1 4 W Tatg Storage temperature 65 to 200 C Ty Max operating junction temperature 200 C Table 3 Thermal data Symbol Parameter Value Unit RihJA Thermal resistance junction ambient max 125 C W Mounted on a 15 x 15 x 0 6 mm ceramic substrate Doc ID 022014 Rev 3 3 11 Pin configu
6. ANTABILITY FITNESS FOR A PARTICULAR PURPOSE AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION OR INFRINGEMENT OF ANY PATENT COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES ST PRODUCTS ARE NOT RECOMMENDED AUTHORIZED OR WARRANTED FOR USE IN MILITARY AIR CRAFT SPACE LIFE SAVING OR LIFE SUSTAINING APPLICATIONS NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY DEATH OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE ST PRODUCTS WHICH ARE NOT SPECIFIED AS AUTOMOTIVE GRADE MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER S OWN RISK Resale of ST products with provisions different from the statements and or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever any liability of ST ST and the ST logo are trademarks or registered trademarks of ST in various countries Information in this document supersedes and replaces all information previously supplied The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners O 2012 STMicroelectronics All rights reserved STMicroelectronics group of companies Australia Belgium Brazil Canada China Czech Republic Finland France Germany Hong Kong India Israel Italy J
7. apan Malaysia Malta Morocco Philippines Singapore Spain Sweden Switzerland United Kingdom United States of America www st com ky Doc ID 022014 Rev 3 11 11
8. ration 2ST3360 2 Pin configuration Figure 2 Pin connections Metallized corner NPN Emitter PNP Emitter NPN Collectror NPN Base Bottom view pad side PNP Collector PNP Base AM09301v1 4 11 Doc ID 022014 Rev 3 2ST3360 Electrical characteristics 3 Electrical characteristics Tcase 25 C unless otherwise specified Table 4 Electrical characteristics for NPN Symbol Parameter Test conditions Min Typ Max Unit i Collector cut off current Vcp 60 V 100 nA CBO Ig 0 Vcg 60 V Ta 110 C 10 pA Emitter cut off current IEBO VEB 6V 100 nA Ic 0 VBE on Base emitter on voltage Voce 2V lc 100 mA 650 mV V 1 Collector emitter lc 2 0 8A lg 40 mA 250 mu CE sat saturation voltage lc 2A lg 100 mA 550 lc 100mA Vcog 2V 80 hee DC current gain g SE FE q Io 1A Vcp 2V 160 400 Resistive load ta Delay time lc22A Voc 2 10V 20 ns ti Rise time IB on IB ott 200 mA 70 ns ts Storage time VBE otf 5 V 830 ns t Fall time 67 ns fr Transition frequency lc201A Vggz 10V 130 MHz 1 Pulse test pulse duration lt 300 us duty cycle 2 Table5 Electrical characteristics for PNP Symbol Parameter Test conditions Min Typ Max Unit Collector cut off current Vcp 60V 100 nA CBO Ig 0 Vcg 60 V Ta 110 C 10 pA Emitter cut off current IEBO VEB 6V 100 nA lc 0 VBE
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ST 2ST3360 handbook