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ST STGP7NC60HD/STGF7NC60HD/STGB7NC60HD handbook

1. 7 0 10 20 50 Qg nC Figure 13 Total Switching Losses vs Temper ature E uJ HV21490 200 150 100 50 3 25 50 75 100 Ty C Figure 14 Total Switching Losses vs Collector Current 21510 E uJ Vee 390V Vy 15V En 400 Rez 100 T 2125 C Eon 300 200 100 0 3 6 9 12 STGP7NC60HD STGF7NC60HD STGB7NC60HD Figure 15 Thermal Impedance For TO 220 Figure 17 Turn Off SOA D PAK TO280F HV21530 K Ic A 6 0 5 4 Vgez15V 150 10 02 E 0 1 2 i07 1 6 10
2. STGB NC60HDI STGP7NC60HD Y STGF7NC60HD STGB7NC60HD KEGHANNEL 14A 600V TO 220 TO 220FP D PAK Very Fast PowerMESH IGBT Table 1 General Features Figure 1 Package TYPE VcEs Vck sat lc 25 C 100 C STGP7NC6OHD 600V 25V STGF7NC60HD 600 V lt 2 5V STGB7NC60HD 600 V lt 2 5V m LOWER ON VOLTAGE DROP Veesat OFF LOSSES INCLUDE TAIL CURRENT LOSSES INCLUDE DIODE RECOVERY ENERGY m LOWER RATIO HIGH FREQUENCY OPERATION UP 70 KHz m VERY SOFT ULTRA FAST RECOVERY ANTI PARALLEL DIODE m NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRIBUTION DESCRIPTION Using the latest high voltage technology based on a patented strip layout STMicroelectronics has designed an advanced family of IGBTs the Pow erMESH IGBTs with outstanding performances The suffix H identifies a family optimized for high frequency applications in order to achieve very high switching performances reduced tfall man taining a low voltage drop 6 1 JS P 5 8612850 3 APPLICATIONS m HIGH FREQUENCY INVERTERS SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES MOTOR DRIVERS Table 2 Order Code PART NUMBER MARKING PACKAGE PACKAGING STGP7NC60HD GP7NC60HD TO 220 TUBE STGF7NC60HD GF7NC60HD TO 220FP TUBE STGB7NC60HDT4 GB7NC60HD D PAK TAPE amp REEL Rev 9 June 2005 1 15 STGP7NC60HD STGF7NC60HD STGB7NC60HD Table
3. STGF7NC60HD STGB7NC60HD ELECTRICAL CHARACTERISTICS CONTINUED Table 6 Dynamic pemeeessam puce A p prep i Input Capacitance Voce 25 V f 1 MHz 0 Output Capacitance Reverse Transfer Capacitance Total Gate Charge Vcg 390 V Ic 7 A Gate Emitter Charge Vee 15V Gate Collector Charge see Figure 22 Q Turn Off SOA Minimum Vclamp 480 V Tj 150 C Current Rg 10 Q 15 1 Pulsed Pulse duration 300 us duty cycle 1 5 Table 7 Switching On Turn on Delay Time Vcc 390 V Ic 27 A Current Rise Time 10 15V 25 C Turn on Current Slope see Figure 19 Turn on Delay Time Vcc 390 V Ic 27A Current Rise Time 10 15V 125 C Turn on Current Slope see Figure 20 tr Voff Off Voltage Rise Time Vcc 390 V Ic 7 A 100 15V Ty 25 C tr Current Fall Time see Figure 20 Off Voltage Rise Time 390 V Ic 27 A 10 0 15V Tj 125 Current Fall Time see Figure 20 ta oft Turn off Delay Time Turn off Delay Time Table 9 Switching Energy Turn on Switching Losses Vcc 390 V 7 95 125 Turn off Switching Loss Re 10 15V Tj 25 C 115 150 Total Switching Loss see Figure 19 210 275 Turn on Switching Losses Voc 390 V IG 7A 140 Turn off Switching Loss Re 10 Vag 15V 125 C 215 Total Switching Loss see Figure 20 355 2 Eon is t
4. 05 EDAM i 7 e 10 SINGLE PULSE b 2 LT J 2 107 aes 4 68 4 4 68 2 4 68 2 2 4 68 10 165 4 03 10 1 6 10 0 0 V Figure 16 Thermal Impedance For TO 220FP Figure 18 Emitter Collector Diode Characteristics OFPDEF HV22800 VF 6 05 gt 0 2 2 0 5 0 1 107 1 6 0 05 0 02 1 2 0 01 Teles Zin K Rinse 25C 1072 0 8 SINGLE PULSE 0 4 tp B 10 1075 ot 95 62 ot 10 tp s 0 2 4 6 8 10 Ir lt S7 7 15 STGP7NC60HD STGF7NC60HD STGB7NC60HD Figure 19 Ic vs Frequency HV21520 lc A 20 0 10 eor cst Freq KHz For a fast IGBT suitable for high frequency appli cations the typical collector current vs maximum operating frequency curve is reported That fre quency is defined as follows fmax Pp Pc Eon 1 The maximum power dissipation is limited by maximum junction to case thermal resistance Pp AT considering AT Ty Tc 125 C 75 C 50 C 2 The conduction losses are Pc with 50 of duty cycle Vcesat typical value 125 C 3 Power dissipation during ON amp OFF commuta tions is due to the switching frequency Psw Eon Eorr freq 4 Typical values 125 C for switching losses are used test conditions Vcg 390 Vee 15V 3 3 Ohm Furthermore diode recovery en ergy is
5. 3 Absolute Maximum ratings Ves V Wem EmiterCoteciorvotage CC steer J Collector Current continuous at Tc 25 C as p o EM Collector Current LM at 100 C 4 4 a Collector Current pulsed Lr or es Veg Insulation Wistand VotageACit teeciTe 25 0 _ _ Pulse width limited by max junction temperature Table 4 Thermal Data Rthj case Thermal Resistance Junction case m 56 D PAK ae SUE a amb Thermal Resistance Junction ambient 625 5 C W Maximum Lead Temperature for Soldering si 1 6 mm from case for 10 sec ELECTRICAL CHARACTERISTICS Tcase 25 C UNLESS OTHERWISE SPECIFIED Table 5 Main Parameters Collector Emitter Breakdown lc 1 mA 0 5 Collector cut off Current Max Rating Tc 25 C 0 Max Rating Tc 125 C 5 Gate Emitter Leakage Vece 20V Vcg 0 100 Current 0 Gate Threshold Gate Threshold Voltage Vce Vcg Ic 250 250 vem sat ND Emitter Saturation eS 15V Ic 7A m 85 EL 5 Voltage Vag 15V lc 7 A Tc 125 C 1 7 Calculated according to the iterative formula IcT xV THJ C 10 3 215 STGP7NC60HD
6. Characteristics 21415 15 10 1 0 1 0 3 6 9 12 Figure 7 Collector Emitter On Voltage vs perature HV21430 2 2 2 0 Ic 3 5A 50 0 50 100 1501440 Figure 8 Normalized Gate Threshold vs Tem perature 21450 Vac Cth 2 VEE norm Ic 25015 1 2 1 1 1 0 0 9 0 8 d 50 0 50 100 150 T 6C 5 15 STGP7NC60HD STGF7NC60HD STGB7NC60HD Figure 9 Normalized Breakdown Voltage vs Temperature BV ces 21460 08 04 00 9 92 50 0 50 100 150 T1005 Figure 10 Capacitance Variations C pF 900 Ciss 600 Crss 300 Coss 1 10 Figure 11 Total Switching Losses vs Gate Re sistance 21500 E uJ Voc 390V Ve 15V 300 Ip 7A T 125 C 250 Eott 200 Eon 150 tog 20 40 60 80 Re 6 15 Figure 12 Gate Charge vs Gate Emitter Volt age HV21470 Va V 390
7. OTPRINT S08 _ 4 1 60 1 3 50 t 9 75 1 All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA 3H rrum min Messe hon M opt DIM mm inch nd x Mn MIN MAX MIN F NN 627 330 12 992 5 1 5 0 059 mn C 128 13 2 0 504 0 520 A pl 6 N D 20 2 0795 T n 244 264 10 960 1 039 Ful 1 a N 100 3 937 T 30 4 1 197 t 7 TAPE MECHANICAL DATA PASE QTY 1000 1000 mm inch DIM MIN MAX MIN MAX 0 10 5 10 7 0 413 0 421 _ i P Bo 15 7 159 0 618 0 626 D 1 5 1 6 0 059 0 063 ENEKEN 1 159 1 61 0 062 0 063 E 165 1 85 0 065 0 073 F 114 11 6 0 449 0 456 1 NS KO 4 8 5 0 0 189 0 197 a al cavity 3 9 41 0 153 0 161 Direction of Feed P1 11 9 12 1 0 468 0 476 2 5 Ir P2 19 24 0 075 0 082 zs Rin R 50 1 574 s EE 025 0 35 0 0098 0 0137 a i Ww 23 7 24 3 0 933 0 956 quiam sales type 13 15 STGP7NC60HD STGF7NC60HD STGB7NC60HD Table 11 Revision History 9 Date Revision Description of Changes 07 Jun 2004 4 Stylesheet update No conte
8. ch MIN TYP MAX MIN TYP MAX A 4 4 4 6 0 173 0 181 B 2 5 2 7 0 098 0 106 D 2 5 2 75 0 098 0 108 E 0 45 0 7 0 017 0 027 F 0 75 1 0 030 0 039 F1 1 15 1 7 0 045 0 067 F2 1 15 1 7 0 045 0 067 G 4 95 5 2 0 195 0 204 G1 2 4 2 7 0 094 0 106 H 10 10 4 0 393 0 409 L2 16 0 630 L3 28 6 30 6 1 126 1 204 L4 9 8 10 6 0385 0 417 L5 2 9 3 6 0 114 0 141 L6 15 9 16 4 0 626 0 645 L7 9 9 3 0 354 0 366 3 3 2 0 118 0 126 11 15 STGP7NC60HD STGF7NC60HD STGB7NC60HD 263 02 MECHANICAL DATA mm inch DIM MIN TYP MAX MIN TYP MAX A 4 32 4 57 0 178 0 180 Al 0 00 0 25 0 00 0 009 b 0 71 0 91 0 028 0 350 b2 1 15 1 40 0 045 0 055 6 0 46 0 61 0 018 0 024 c2 1 22 1 40 0 048 0 055 D 8 89 9 02 9 40 0 350 0 355 0 370 D1 8 01 0 315 E 10 04 10 28 0 395 0 404 2 54 0 010 H 13 10 13 70 0 515 0 540 1 30 1 70 0 051 0 067 L1 1 15 1 39 0 045 0 054 L2 1 27 1 77 0 050 0 069 L4 2 70 3 10 0 106 0 122 2 0 8 0 8 L 1 Ld T H 2 ALN 12 __ 41 b2 SEATING PLANE Al i L4 i GAUGE PLANE v2 l 0 25 D2PAK CHIPP 12 15 5 STGP7NC60HD STGF7NC60HD STGB7NC60HD D PAK FO
9. he turn on losses when a typical diode is used in the test circuit in figure 2 If the IGBT is offered in a package with a co pack diode the co pack diode is used as external diode IGBTs 8 DIODE are at the same temperature 25 and 125 C 3 Turn off losses include also the tail of the collector current 3 15 STGP7NC60HD STGF7NC60HD STGB7NC60HD Table 10 Collector Emitter Diode Symbol Parameter Test Condiction Vi Forward On Voltage If 23 5A If 2 3 5 A Tj 125 trr Reverse Recovery Time If 7 A 40 V Tj 25 C di dt 100 A us Reverse Recovery Charge Reverse Recovery Current Softness factor of the diode Reverse Recovery Time If 2 7 A VR 40 V Tj 125 C di dt 100 A us Reverse Recovery Charge Reverse Recovery Current Softness factor of the diode 4 15 STGP7NC60HD STGF7NC60HD STGB7NC60HD Figure 3 Output Characteristics 21410 Ic A Vor 15V 80 14 60 13 12V 40 117 10V 20 9V 8v 0 2 4 6 8 Vce V Figure 4 Transconductance HV21420 9 5 5 0 3 6 9 12 15 42 Figure 5 Collector Emitter On Voltage vs Col lector Current HV21440 VCECSAT gt 2 6 2 3 5 0 3 6 9 12 15 4 Figure 6 Transfer
10. included in the Eon see note 2 while the tail of the collector current is included in the Eorr measurements see note 3 8 15 STGP7NC60HD STGF7NC60HD STGB7NC60HD Figure 20 Test Circuit for Inductive Load Figure 22 Gate Charge Test Circuit Switching g CONST 2200 2 7Kn 5 09910 Figure 23 Diode Recovery Time Waveforms V 20V Vemax 5 09920 SC20030 IGBTs 9 15 STGP7NC60HD STGF7NC60HD STGB7NC60HD TO 220 MECHANICAL DATA mm inch 4 40 4 60 0 173 0 181 b 0 61 0 88 0 024 0 034 b1 1 15 1 70 0 045 0 066 0 49 0 70 0 019 0 027 D 15 25 15 75 0 60 0 620 E 10 10 40 0 393 0 409 e 2 40 2 70 0 094 0 106 1 4 95 5 15 0 194 0 202 F 1 23 1 32 0 048 0 052 H1 6 20 6 60 0 244 0 256 J1 2 40 2 72 0 094 0 107 L 13 14 0 511 0 551 L1 3 50 3 93 0 137 0 154 L20 16 40 0 645 L30 28 90 1 137 oP 3 75 3 85 0 147 0 151 Q 2 65 2 95 0 104 0 116 A 0015988 10 15 3 STGP7NC60HD STGF7NC60HD STGB7NC60HD TO 220FP MECHANICAL DATA DIM mm in
11. nt change 19 Aug 2004 5 Complete Version 17 Sep 2004 6 Figure 18 has been added 09 Nov 2004 7 Final datasheet 19 Jan 2005 8 Datasheet updated 09 Jun 2005 9 Modified title 14 15 3 STGP7NC60HD STGF7NC60HD STGB7NC60HD Information furnished is believed to be accurate and reliable However STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics Specifications mentioned in this publication are subject to change without notice This publication supersedes and replaces all information previously supplied STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners 2005 STMicroelectronics All Rights Reserved STMicroelectronics group of companies Australia Belgium Brazil Canada China Czech Republic Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom United States of America 15 15

ST STGP7NC60HD/STGF7NC60HD/STGB7NC60HD handbook

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