ST STGB3NB60SD handbook
Contents
1. 7 8 STGB3NB60SD Information furnished is believed to be accurate and reliable However STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics Specifications mentioned in this publication are subject to change without notice This publication supersedes and replaces all information previously supplied STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics The ST logo is registered trademark of STMicroelectronics O 2000 STMicroelectronics All Rights Reserved All other names are the property of their respective owners STMicroelectronics GROUP OF COMPANIES Australia Brazil China Finland France Germany Hong Kong India Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom U S A http www st com 8 8 ki2. K 0 5 0 2 0 1 Zth KkRthJ c iors tp r 6 05 po ux M 0 02 0 01 gt SINGLE PULSE 10 75 1074 y o 4 1071 tp s y 3 8 STGB3NB60SD Output Characteristics Ic A GC85450 40 30 20 Transconductance GC85470 grs 3 Ver 15V 0 1 2 2 4 3 6 4 8 Ic A Collector Emiter on Voltage vs Collector Current GC85490 VeE sat V 4 25 C 125 C 0 8 0 6 4 8 Transfer Characteristics Ic A GC85460 40 30 20 0 3 6 9 12 Vg V Collector Emitter on Voltage vs Temperature VcE sat 6C85480 V 0 8 50 0 50 100 150 Ty C Gate Threshold vs Temperature GC85500 VoE th norm Ic 2504A Voce Ver 1 0 0 9 0 8 0 7 50 0 50 100 150 T C ky Normalized Breakdown Voltage vs Temperature 6C89570 BVces norm lc 250uA 14 08 02 0 96 0 90 50 0 50 100 150 T C Gate charge Gate Emitter Voltage GC85530 Vo
3. O O0 STGB3NBEOSDI 0 0 ky STGB3NB60SD N CHANNEL 3A 600V D PAK Power MESH IGBT STGB3NB60SD 600 V a HIGH INPUT IMPEDANCE VOLTAGE DRIVEN a VERY LOW ON VOLTAGE DROP Veesat a HIGH CURRENT CAPABILITY a OFF LOSSES INCLUDE TAIL CURRENT INTEGRATED FREEWHEELING DIODE D PAK SURFACE MOUNTING D PAK TO 263 TO 263 POWER PACKAGE IN TAPE amp REEL suffix T4 SUFFIX T4 DESCRIPTION Using the latest high voltage technology based on a patented strip layout STMicroelectronics has designed an advanced family of IGBTs the PowerMESH IGBTs INTERNAL SCHEMATIC DIAGRAM with outstanding perfomances The suffix S identifies a family optimized to achieve minimum on voltage drop for SA low frequency applications lt 1kHz APPLICATIONS GAS DISCHARGE LAMP a STATIC RELAYS MOTOR CONTROL 6 1 SES O C12850 E 3 ABSOLUTE MAXIMUM RATINGS Parameter Value Voss ostsee vage sn 59 Gale Eni Vaage a Collector Current continuos at T 25 C Collector nu continuos at T 100 C pagar ras e Pulse width limited safe operating area November 2000 1 8 STGB3NB60SD THERMAL DATA Rihj case Thermal Resistance Junction case Rithj amb Thermal Resistance Junction ambient Rthe sink Thermal Resistance Case sink ELECTRICAL CHARACTERISTICS Tease 25 C unless otherwise specified OFF Symbol Parameter Test TestCondit
4. c V Ver 480V le 3A 16 12 8 4 0 4 8 12 16 Qg nC Off Switching Losses vs Tj E mJ GC89590 0 40 80 120 160 T C STGB3NB60SD Capacitance Variations GC85520 0 0 20 30 40 Vce V Off Switching Losses vs Ic E mJ 6C89580 o E a X By dnd GC85560 0 120 240 360 480 Ver V 5 8 STGB3NB60SD Diode Forward vs Tj Vr V 2 6 252 IF 6A 8 3A le a sin 1 5A 0 50 0 50 100 Fig 1 Gate Charge test Circuit Pw li 1KQ 12V 47K 0 100nF LT CONST V 20V Venyax i 1KQ 2200 A Zur 2 7K0 A 47KQ Fig 3 Switching Waveforms Diode Forward Voltage GC89610 Ve V 2 2 0 6 0 1 9 2 4 3 6 4 8 Ir A Fig 2 Test Circuit For Inductive Load Switching pA da D U T A DIODE pg SC098920A 6 8 90 reve Iaross Toff SC14080 ky STGB3NB60SD D PAK MECHANICAL DATA
5. ions ome CES um i m Emitter on 250 yA VGE Breakdown Voltage ICES Collector cut off Vag Vce Max Rating Tj 25 C Vce Max Rating Tj 125 C lass Gate body Leakage Vas 20V Vce 0 Current Vps 0 Collector Emitter Saturation ver 2 y 5 M Voltage Va 15 V Ip 3AT 125 C DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitanc es Total Gate Charge VcEg 480V Ic 3A Vee 15 V Gate Emitter Charge Gate Collector Charge Latching Current Vclamp 480 V Tj 150 C SWITCHING ON DelayTime Vcc 480 V Rise Time Var 15 V di dt on Turn on Current Slope Eon Turn on Switching Losses 4 2 8 STGB3NB60SD ELECTRICAL CHARACTERISTICS continued SWITCHING OFF to 1 8 us Cross Over Time Voc 480 V Off Voltage Rise Time Ree 1kQ Delay Time Fall Time Turn off Switching Loss Cross Over Time Voc 480 V Off Voltage Rise Time Ree 1kQ Delay Time Tj 125 C Fall Time Turn off Switching Loss Forward Current Forward Current pulsed Ir fm Vi Forward On Voltage Reverse Recovery Time Reverse Recovery Charge di dt 100 A us Tj 125 C Reverse Recovery Current Pulse width limited by max junction temperature Pulsed Pulse duration 300 us duty cycle 1 5 96 Losses Include Also The Tail Jedec Standardization Thermal Impedance GC90330
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ST STGB3NB60SD handbook