ST STGP14NC60KD/STGF14NC60KD/STGB14NC60KD handbook
Contents
1. 25 50 75 100 TU C Figure 14 Total Switching Losses vs Collector Current HV26360 E u Veo 390V Vee 15V Eon 800 Re 100 Ts 125 C 600 400 Fon 200 S 3 6 9 12 IL STGP14NC60KD STGF14NC60KD STGB14NC60KD Figure 15 Thermal Impedance For TO 220 D PAK 10280F K 0 5 0 2 p t 107 0 05 7 K Ringe 002 al E e 001 i SINGLE PULSE z 8 GC h 107 105 wi wi 10 wi 100 pi Figure 16 Thermal Impedance For TO 220FP TOFPDEF j 0 2 0 1 107 0 05 0 02 0 01 Zin K Rite 107 b r SINGLE PULSE bl 2 10 105 tot 199 192 io 10 tp s Figure 17 Turn Off SOA HV26350 1c A 4 2 10 8 8 4 2 D 10 3 2 Vge 15V _ 11 150C 19 2 4 EB 2 4 68 2 4 68 169 01 02 05 Ver2. DI STGP14NC60KD STGF14NC60KD STGB14NC60KD N CHANNEL 14A 600V TO 220 TO 220FP D PAK SHORT CIRCUIT RATED PowerMESHTM IGBT Table 1 General Features Figure 1 Package TYPE Vces VcE sap Max lc 25 C 100 C STGB14NC60KD 600 V lt 25V 14A STGF14NC60KD 600 V lt 25V 7A STGP14NC60KD 600 V lt 25V 14A LOWER ON VOLTAGE DROP Vcesat OFF LOSSES INCLUDE TAIL CURRENT LOWER Cnes 1 Cies RATIO SWITCHING LOSSES INCLUDE DIODE RECOVERY ENERGY m VERY SOFT ULTRA FAST RECOVERY ANTIPARALLEL DIODE m NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRUBUTION DESCRIPTION Using the latest high voltage technology based on a patented strip layout STMicroelectronics has designed an advanced family of IGBTs the Pow erMESH_ IGBTs with outstanding performances O D PAK Figure 2 Internal Schematic Diagram c 2 The suffix K identifies a family optimized for high frequency motor control applications vvith short cir cuit vvithstand capability x G 1 0 APPLICATIONS m HIGH FREQUENCY INVERTERS SMPS and PFC IN BOTH HARD SWITCH AND H RESONANT TOPOLOGIES SC12850 E 3 MOTOR DRIVERS Table 2 Order Codes SALES TYPE MARKING PACKAGE PACKAGING STGB14NC60KDT4 GB14NC60KD D2PAK TAPE amp REEL STGF14NC60KD GF14NC60KD TO 220FP TUBE STGP14NC60KD GP14NC60KD TO 220 TUBE Rev 2 July 2005 1 1
3. Off Symbol Parameter Test Conditions Min Typ Max Unit tr Voff Off Voltage Rise Time Vcc 390 V lc 7 A 60 ns taloff Turn off Delay Time Bop 100 Ver 15V 116 ns ti Current Fall Time T 25 C 75 ns see Figure 19 tr Voff Off Voltage Rise Time Vec 390 V Ic 7 A 24 ns taloff Turn off Delay Time Rce 100 Ver 15V 196 ns ti Current Fall Time Tj 125 C 144 ns see Figure 19 Table 9 Switching Energy Symbol Parameter Test Conditions Min Typ Max Unit Eon 2 Turn on Switching Losses Vcc 390 V Ic 7A 82 HJ Eott 3 Turn off Switching Losses Re 10 Q VGE 15V Tj 25 155 uJ Ets Total Switching Losses see Figure 19 237 uJ Eon 2 Turn on Switching Losses Vcc 390 V lc 7 A 131 uJ Eoft 3 Turn off Switching Losses Re 10 9 VGE 15V Tj 125 C 370 uJ Ets Total Switching Losses see Figure 19 501 uJ 1 Pulsed Pulse duration 300 us duty cycle 1 5 2 Eon is the turn on losses when a typical diode is used in the test circuit in figure 2 If the IGBT is offered in a package with a co pack diode the co pack diode is used as external diode IGBTs amp DIODE are at the same temperature 25 C and 125 C 3 Turn off losses include also the tail of the collector current d 3 14 STGP14NC60KD STGF14NC60KD STGB14NC60KD Table 10 Collector Emitter Diode Symbol Parameter Test Condiction Min Typ Max Unit V Forward On Voltage lf 3 5 A 1 3 1 9
4. V Figure 18 Emitter Collector Diode Characteristics HV26510 15 Ir CA 7 14 STGP14NC60KD STGF14NC60KD STGB14NC60KD Figure 19 Test Circuit for Inductive Load Figure 21 Gate Charge Test Circuit Switching A ba I T 6 ef SEN E Q S 1000 N HF HF ES H NG aT C06010_IGBT g CONST Vi 20V Vemax EN 2200 aA aF ZIKO 470 Na ika 5009910 Figure 20 Switching Waveforms Figure 22 Diode Recovery Times Waveform SC20030 IGBTS 8 14 d STGP14NC60KD STGF14NC60KD STGB14NC60KD a D PAK MECHANICAL DATA mm inch DIM MIN TYP MAX MIN TYP MAX A 4 4 4 6 0 173 0 181 Al 2 49 2 69 0 098 0 106 A2 0 03 0 23 0 001 0 009 B 0 7 0 93 0 027 0 036 B2 1 14 1 7 0 044 0 067 Cc 0 45 0 6 0 017 0 023 c2 1 23 1 36 0 048 0 053 D 8 95 9 35 0 352 0 368 DI 8 0 315 E 10 10 4 0 393 E1 8 5 0 334 G 4 88 5 28 0 192 0 208 L 15 15 85 0 590 0 625 L2 1 27 1 4 0 050 0 055 L3 1 4 1 75 0 055 0 068 2 4 3 2 0 094 0 126 R 0 4 0 015 v2 09 49 9 14 STGP14NC60KD STGF14NC60KD STGB14NC60KD 10 14 TO 220FP MECHANICAL DATA mm inch DIN MIN TYP
5. V If 3 5 A Tj 125 C 1 1 V trr Reverse Recovery Time If 7 A Vr 40 V 37 ns ta Tj 25 C di dt 100 A us 22 ns Gir Reverse Recovery Charge 40 nC liim Reverse Recovery Current 2 1 A Softness factor of the diode 0 68 trr Reverse Recovery Time If 7 A Vr 40 V 61 ns ta Tj 125 C di dt 100 A us 34 ns Qrr Reverse Recovery Charge 98 nC 8 Reverse Recovery Current 3 2 A Softness factor of the diode 0 79 4 14 1972 STGP14NC60KD STGF14NC60KD STGB14NC60KD Figure 3 Output Characteristics HY26340 I Ve 15y 50 14V 13V 12V 30 s 11V HOV 10 rov 8V 7V 0 5 10 15 20 25 30 Ve V Figure 4 Transconductance HV26270 gis S Tu 50C 3 80 V 15V BEEN 3 20 2 60 425C 2 00 1 40 0 80 0 2 4 6 8 T Figure 5 Collector Emitter On Voltage vs Col lector Current VEEcSAT W i 3 00 HV26280 2 60 2 20 oE 1 80 TELESC 0 3 6 9 12 15 Ic Ad Figure 6 Transfer Characteristics HV26345 lc A 50 0 Vce 25V 30 20 0 2 4 6 8 10 12 14Ver V Figure 7 Collector Emitter On Voltage vs Tem perature Veetsat HV26500 Va 15V
6. 2 40 2 20 2 00 1 80 1 60 1 40 50 0 50 100 150 TI O Figure 8 Normalized Gate Threshold vs Tem perature HV26290 Vae th gt be VES Var norm T 250pA 1 2 1 1 1 0 0 9 0 8 Gei 50 0 50 100 150 Tu 5 14 STGP14NC60KD STGF14NC60KD STGB14NC60KD Figure 9 Normalized Breakdown Voltage vs Temperature BV ces norm HV21460 1 12 Ie mA 1 08 1 00 0 96 0 92 50 0 50 100 150 ICC Figure 10 Capacitance Variations HV26520 Se f 1MH z Ves 0V 1200 900 Ciss 600 300 Coss Crss 0 10 20 30 40 Ves V Figure 11 Total Switching Losses vs Gate Re sistance HV26370 VI Voc 390Y Ve 15V 800 7A Ti 125 C 600 400 Eoft 200 0 50 100 150 200 Re 6 14 Figure 12 Gate Charge vs Gate Emitter Volt age HV26330 Ze 10 20 50 Qg n Figure 13 Total Switching Losses vs Temper ature HV26380 Full V 390V V 15V 400 lo TA Re 100 300 200 100 0
7. 4 STGP14NC60KD STGF14NC60KD STGB14NC60KD Table 3 Absolute Maximum ratings Symbol Parameter Value Unit STGPI4NCeokp_ STGF14NC60KD Vces Collector Emitter Voltage Vas 0 600 V VECR Emitter Collector Voltage 20 V VGE Gate Emitter Voltage 20 V IC Collector Current continuous at IC 25 25 11 A IC Collector Current continuous at IC 100 C 14 7 A Icm Collector Current pulsed 50 A lr Diode RMS Forward Current at Tc 25 C 20 A PToT Total Dissipation at Tc 25 C 80 25 Ww Derating Factor 0 64 0 20 wc Viso Insulation Withstand Voltage A C t 1 sec Tc 25 C 2500 V Tstg Storage 150058119 266313360 SE Tj Operating Junction Temperature m Pulse width limited by Max Junction Temperature Table 4 Thermal Data Min Typ Max Rthj case Thermal Resistance Junction case DEIR 1 56 C W TO 220FP 5 0 C W Rthj amb Thermal Resistance Junction ambient 62 5 C W TL Maximum Lead Temperature for Soldering 300 C Purpose 1 6 mm from case for 10 sec ELECTRICAL CHARACTERISTICS TcAsE 25 C UNLESS OTHERWISE SPECIFIED Table 5 Main Parameters Symbol Parameter Test Conditions Min Typ Max Unit VBR CES Collector Emitter lc 1 mA V 0 600 V Breakdown Voltage lGES Collector cut off Current Vcez Max Rating Tc 25 C 10 LA Ve 0 VcE Max Rating Tc 125
8. ANICAL DATA Access hole ng i mm inch A a at slot location DIM MIN MAX MIN MAX e A 330 12 992 B 115 0 059 14 S c T28 132 0 504 0 520 A D N D 202 0795 TR I G 24 4 26 4 0 960 1 039 Full radius Tape slot ei G measured N 100 3 937 N fin core tor at hub Asoo T 30 4 1 197 TAPE MECHANICAL DATA BASE QTY BULK QIN 1000 1000 DIM mm inch MIN MAX MIN MAX Ao 10 5 10 7 0 413 0 421 _ e tolerance on tape o BO 15 7 15 9 0 618 0 626 H L o Ve D 15 1 6 0 059 0 063 se 39 DI 159 1 61 0 062 0 063 a I C 1 65 1 85 0 065 0 073 a F 11 4 11 6 0 449 0 456 Ko 48 5 0 0 189 0 197 es of cavity PO 39 41 0 153 0 161 PT 11 9 12 1 0 468 0 476 P2 1 9 21 0 075 0 082 CF gt E SS E R 50 1 574 CIE SS T 0 25 0 35 0 0098 0 0137 W 23 7 24 3 0 933 0 956 FEED DIRECTION Bending radius on sales type d STGP14NC60KD STGF14NC60KD STGB14NC60KD Table 11 Revision History Date Revision Description of Changes 14 Jun 2005 1 New release 22 Jul 2005 2 Complete version d 13 14 STGP14NC60KD STGF14NC60KD STGB14NC60KD Information furnished is believed to be accurate and reliable However STMicroelectronics assumes no responsibi
9. C 1 mA IGES Gate Emitter Leakage Vgez 20V Vce 0 100 nA Current Vce 0 VGE th Gate Threshold Voltage VcE Nep lc 250 HA 5 7 v VcE sat Collector Emitter Saturation VGE 15V lc 7A 2 0 2 5 V Voltage Vgez 15V lc 7A Tc 125 C 1 8 V Calculated according to the iterative formula SE ae TH C CESAT MAX C 2 14 ST STGP14NC60KD STGF14NC60KD STGB14NC60KD ELECTRICAL CHARACTERISTICS CONTINUED Table 6 Dynamic Symbol Parameter Test Conditions Min Typ Max Unit gfs 1 Forward Transconductance VoE 15V lc 7A 3 Ss Cies Input Capacitance Vce 25 V f 1 MHz Vee 0 760 pF Coes Output Capacitance 86 pF Cres Reverse Transfer 15 5 pF Capacitance Qg Total Gate Charge Vce 390 V Ic 7 A 34 4 nc Qge Gate Emitter Charge VGE 15 V 8 1 nc Qge Gate Collector Charge see Figure 21 16 4 nG tscw Short Circuit Withstand Time Vor 0 5 Ver cEs Tj 125 C 10 hs Re 10 Q Ver 12 V Table 7 Switching On Symbol Parameter Test Conditions Min Typ Max Unit d on Turn on Delay Time Vec 390 V lc 7 A 22 5 ns tr Current Rise Time Re 10 Q Vgez 15V Tj 25 C 8 5 ns di dt on Turn on Current Slope see Figure 19 700 Aus d on Turn on Delay Time Vec 390 V Ic 7 A 22 ns tr Current Rise Time Re 10 Q Vgez 15V Tje 125 C 9 5 ns di dt on Turn on Current Slope see Figure 19 680 Alus Table 8 Switching
10. MAX MIN TYP MAX A 4 4 4 6 0 173 0 181 B 2 5 2 7 0 098 0 106 D 2 5 2 75 0 098 0 108 E 0 45 0 7 0 017 0 027 F 0 75 1 0 030 0 039 F1 1 15 1 7 0 045 0 067 F2 1 15 1 7 0 045 0 067 G 4 95 5 2 0 195 0 204 G1 2 4 2 7 0 094 0 106 H 10 10 4 0 393 0 409 L2 16 0 630 L3 28 6 30 6 1 126 1 204 L4 9 8 10 6 0385 0 417 L5 2 9 3 6 0 114 0 141 L6 15 9 16 4 0 626 0 645 L7 9 9 3 0 354 0 366 3 3 2 0 118 0 126 3 STGP14NC60KD STGF14NC60KD STGB14NC60KD 4 TO 220 MECHANICAL DATA mm inch PIM MIN TYP MAX MIN TYP MAX A 4 40 4 60 0 173 0 181 b 0 61 0 88 0 024 0 034 b1 1 15 1 70 0 045 0 066 0 49 0 70 0 019 0 027 D 15 25 15 75 0 60 0 620 E 10 10 40 0 393 0 409 e 2 40 2 70 0 094 0 106 e1 4 95 5 15 0 194 0 202 E 1 23 1 32 0 048 0 052 H1 6 20 6 60 0 244 0 256 JI 2 40 2 72 0 094 0 107 L 13 14 0 511 0 551 L1 3 50 3 93 0 137 0 154 L20 16 40 0 645 L30 28 90 1 137 P 3 75 3 85 0 147 0 151 Q 2 65 2 95 0 104 0 116 I b x3 POADO15988 M 11 14 STGP14NC60KD STGF14NC60KD STGB14NC60KD 12 14 D PAK FOOTPRINT FC 12 20 5 08 im 43 50 All dimensions are in millimeters TAPE AND REEL SHIPMENT 40 mm min REEL MECH
11. lity for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics Specifications mentioned in this publication are subject to change without notice This publication supersedes and replaces all information previously supplied STMicroelectronics products are not authorized for use as critical components in life support devices or systems vvithout express vyritten approval of STMicroelectronics The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective ovvners C 2005 STMicroelectronics All Rights Reserved STMicroelectronics group of companies Australia Belgium Brazil Canada China Czech Republic Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom United States of America SI 14114 WWW ALLDATASHEET COM Copyright Each Manufacturing Company All Datasheets cannot be modified without permission This datasheet has been download from www AllDataSheet com 100 Free DataSheet Search Site Free Download No Register Fast Search System www AllDataSheet com
Download Pdf Manuals
Related Search
ST STGP14NC60KD/STGF14NC60KD/STGB14NC60KD handbook