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MOTOROLA TIP120 TIP121 TIP122 TIP122 TIP125 TIP126 TIP127 handbook

1. 1 0 Lu 0 7 Q D 0 Z 05 3 m 03 mT o aae 02 ZH 04 SZ o1i Z9JC t Rejc z RoJc 1 92 C W MAX Eo 007 005 D CURVES APPLY FOR POWER m 0 05 PULSE TRAIN SHOWN Z oog ee READ TIME AT ti E TJ pk TC P pk ZeJC t ES 0 02 0 01 x SINGLE PULSE 001 002 0 05 0 1 0 2 0 5 1 0 2 0 5 0 10 20 50 100 200 500 10k t TIME ms Figure 4 Thermal Response 20 10 100 us There are two limitations on the power handling ability of a sa zi 500 us transistor average junction temperature and second break down Safe operating area curves indicate Ic VCE limits of 2 20 Ty 150 C de the transistor that must be observed for reliable operation 2 l H 1 o L BONDING WIRE LIMITED the transistor must not be subjected to greater dissipa o THERMALLY LIMITED 1mszi tion than the curves indicate I S 0 5 Tc 25 C SINGLE PULSE Eni The data of Figure 5 is based on TJ pk 150 C Tc is SECOND BREAKDOWN LIMITED variable depending on conditions Second breakdown pulse a u CURVES APPLY BELOW limits are valid for duty cycles to 10 provided TJ pk 01 RATED VCEO 150 C TJ pk may be calc
2. 5 0 POLICE T V Rg amp Rc VARIED TO OBTAIN DESIRED CURRENT LEVELS 4 30 ts ep HEN D4 MUST BE FAST RECOVERY TYPE eg 20 ET TTI 1N5825 USED ABOVE 100 mA R Lr a MSD6100 USED BELOW Ip 100 mA CF scope T ane TH O are pou 3 pamm an approx am d 8 0 V 05 TLI 0 03 TIL i 02 tr ji 40V Vec 30V a approx le IB 250 SEM 25 for ty and Dy is disconnected 0 1L 81 82 O tr tts 10 ns For NEN te t circuit li polariti 0 07 E V dass tg V a 0 DUTY CYCLE 1 0 or est circuit reverse all polarities 0 05 d BE off 0 1 02 03 05 07 10 20 30 50 70 10 COLLECTOR CURRENT AMP Figure 2 Switching Times Test Circuit Figure 3 Switching Times 2 Motorola Bipolar Power Transistor Device Data TIP120 TIP121 TIP122 TIP125 TIP126 TIP127
3. 10 Hz Vcc 20 V RBE 1009 TA TG TO 220AB Pp POWER DISSIPATION WATTS 4 0 80 3 0 60 2 0 40 1 0 20 0 16 100 120 T Taubes RE C Figure 1 Power Derating Preferred devices are Motorola recommended choices for future use and best overall value REV 2 Motorola Inc 1995 M MOTOROLA TIP120 TIP121 TIP122 TIP125 TIP126 TIP127 ELECTRICAL CHARACTERISTICS Tc 25 C unless otherwise noted he ee Se Perv ee OFF CHARACTERISTICS Collector Emitter Sustaining Voltage 1 Ic 100 mAdc Ig 0 TIP120 TIP125 TIP121 TIP126 TIP122 TIP127 Collector Cutoff Current VCE 30 Vac Ig 0 TIP120 TIP125 VCE 40 Vdc IB 0 TIP121 TIP126 VCE 50 Vac IB 0 TIP122 TIP127 Collector Cutoff Current VcB 60 Vac Ig 0 TIP120 TIP125 VcB 80 Vac Ig 0 TIP121 TIP126 100 Vdc IE 0 TIP122 TIP127 ON CHARACTERISTICS 1 DC Current Gain Ic 0 5 Adc VcE 3 0 Vdc Ic 3 0 Adc Vcg 3 0 Vdc Collector Emitter Saturation Voltage Ic 3 0 Adc Ig 12 mAdc lc 5 0 Ade Ig 20 mAdc Base Emitter On Voltage Ic 3 0 Adc VcE 3 0 Vdc DYNAMIC CHARACTERISTICS Small Signal Current Gain Ic 3 0 Adc Vcg 4 0 Vdc f 1 0 MHz Output Capacitance VoB 10 Vdc lg 0 f 0 1 MHz TIP125 TIP126 TIP127 TIP120 TIP121 TIP122 1 Pulse Test Pulse Width lt 300 us Duty Cycle lt 2
4. MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by TIP120 D Plastic Medium Power NPN Complementary Silicon Transistors TIP120 designed for general purpose amplifier and low speed switching applications x High DC Current Gain TIP 1 2 1 hFE 2500 Typ Ic 4 0 Adc e Collector Emitter Sustaining Voltage 100 mAdc TI P 1 22 VCEO sus 60 Vdc Min 118120 TIP125 PNP 80 Vdc Min TIP121 TIP126 100 Vdc Min TIP122 TIP127 TIP1 25 e Low Collector Emitter Saturation Voltage VCE sat 2 0 Vdc Max Ic 3 0 Adc TI P 1 26 4 0 Vdc Max Ic 5 0 Adc e Monolithic Construction with Built In Base Emitter Shunt Resistors e TO 220AB Compact Package TI P 1 27 MAXIMUM RATINGS Motorola Preferred Device TIP120 TIP121 TIP122 Symbol TIP125 TIP126 TIP127 DARLINGTON 5 AMPERE eo e COMPLEMENTARY SILICON 9 T POWER TRANSISTORS 60 80 100 VOLTS 65 WATTS Emitter Base Voltage Collector Current Continuous Peak BmeOwen f Total Power Dissipation Tc 25 C Derate above 25 C Total Power Dissipation Ta 25 C Derate above 25 C Unclamped Inductive Load Energy 1 Operating and Storage Junction TJ Tstg 65 to 150 Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol CASE 221A 06 Thermal Resistance Junction to Case Rejc Thermal Resistance Junction to Ambient RAJA 1 I 1 A L 100 mH PR F
5. 602 244 6609 HONG KONG Motorola Semiconductors H K Ltd 8B Tai Ping Industrial Park INTERNET http Design NET com 51 Ting Kok Road Tai Po Hong Kong 852 26629298 AA MOTOROLA Q TIP120 D Copyright Each Manufacturing Company All Datasheets cannot be modified without permission This datasheet has been download from www AllDataSheet com 100 Free DataSheet Search Site Free Download No Register Fast Search System www AllDataSheet com
6. DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED SEATING PLANE INCHES MILLIMETERS MIN MAX MIN MAX 0 570 0 620 14 48 15 75 0 380 0 405 9 66 10 28 0 160 0 190 4 07 4 82 0 025 0 035 0 64 0 88 0 142 0 147 3 61 3 73 0 095 0 105 242 2 66 0 110 0 155 280 3 93 0 018 0 025 0 46 0 64 0 500 0 562 12 70 14 27 0 045 0 060 115 152 0 190 0 210 4 83 5 33 0 100 0 120 254 3 04 0 080 0 110 2 04 2 79 0 045 0 055 115 1 39 0 235 0 255 597 6 47 0 000 0 050 0 00 1 27 1415 0 080 2 04 N c A o x o z ir c r o mjo jo jw gt CASE 221A 06 TO 220AB ISSUE Y Motorola Bipolar Power Transistor Device Data 5 TIP120 TIP121 TIP122 TIP125 TIP126 TIP127 Motorola reserves the right to make changes without further notice to any products herein Motorola makes no warranty representation or guarantee regarding the suitability of its products for any particular purpose nor does Motorola assume any liability arising out of the application or use of any product or circuit and specifically disclaims any and all liability including without limitation consequential or incidental damages Typical parameters can and do vary in different applications All operating parameters including Typicals must be validat
7. 0 55 C 500 500 300 300 200 200 0 1 02 0 3 05 07 1 0 20 30 50 70 10 0 1 02 03 05 07 10 20 30 50 7 0 10 Ic COLLECTOR CURRENT AMP Ic COLLECTOR CURRENT AMP Figure 8 DC Current Gain VcE COLLECTOR EMITTER VOLTAGE VOLTS VcE COLLECTOR EMITTER VOLTAGE VOLTS 1 0 1 0 0 3 0 5 0 7 1 0 2 0 3 0 5 0 7 0 10 20 30 0 3 05 0 7 1 0 2 0 3 0 5 0 7 0 10 20 30 IB BASE CURRENT mA BASE CURRENT mA Figure 9 Collector Saturation Region 3 0 3 0 Ty 25 C Ty 25 C 2 5 2 5 a o pen S 20 S 20 LLI Lu e e o 15 VBE sat Ic lp 250 15 VBEOVCE 40V gt gt VBE O Vce 4 0 V iu 10 BE NCE 10 VBE sat Ic Ip 250 VCE sat O Ic lp 250 VCE sat 250 05 05 CE sat V C 0 1 0203 05 07 1 0 2030 50 7 0 10 0 1 0203 05 07 10 2030 50 70 10 COLLECTOR CURRENT AMP I COLLECTOR CURRENT AMP Figure 10 On Voltages 4 Motorola Bipolar Power Transistor Device Data TIP120 TIP121 TIP122 TIP125 TIP126 TIP127 PACKAGE DIMENSIONS NOTES 1 DIMENSIONING AND TOLERANCING PER ANSI Y14 5M 1982 2 CONTROLLING DIMENSION INCH 3 DIMENSION Z
8. ed for each customer application by customer s technical experts Motorola does not convey any license under its patent rights nor the rights of others Motorola products are not designed intended or authorized for use as components in systems intended for surgical implant into the body or other applications intended to support or sustain life or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur Should Buyer purchase or use Motorola products for any such unintended or unauthorized application Buyer shall indemnify and hold Motorola and its officers employees subsidiaries affiliates and distributors harmless against all claims costs damages and expenses and reasonable attorney fees arising out of directly or indirectly any claim of personal injury or death associated with such unintended or unauthorized use even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part Motorola and AA are registered trademarks of Motorola Inc Motorola Inc is an Equal Opportunity Affirmative Action Employer How to reach us USA EUROPE Motorola Literature Distribution JAPAN Nippon Motorola Ltd Tatsumi SPD JLDC Toshikatsu Otsuki P O Box 20912 Phoenix Arizona 85036 1 800 441 2447 6F Seibu Butsuryu Center 3 14 2 Tatsumi Koto Ku Tokyo 135 Japan 03 3521 8315 MFAX RMFAXOQ email sps mot com TOUCHTONE
9. ulated from the data in Figure 4 005 TET IB At high case temperatures thermal limitations will reduce the TIP122 TUS power that can be handled to values less than the limitations 0 02 imposed by second breakdown 1 0 20 30 50 70 10 20 30 50 70 100 P y Voge COLLECTOR EMITTER VOLTAGE VOLTS Figure 5 Active Region Safe Operating Area 10 000 300 5000 TJ 25 C Zz 3000 ee tt SO 200 2000 AE t T di 1000 TN e mA C gt 500 Tr 225 C N z Se ob S 300 C N 100 H 300 Vcg 4 0 Vdc N TL Ic 3 0 Adc N x 7 Mc 100 3 2 5 NENG 50 B X PNP 30 PNP NPN N Ne li 10 30 1 0 2 0 50 10 20 50 100 200 500 1000 01 02 05 1 0 20 50 10 20 50 100 f FREOUENCY kHz Vp REVERSE VOLTAGE VOLTS Figure 6 Small Signal Current Gain Figure 7 Capacitance Motorola Bipolar Power Transistor Device Data 3 TIP120 TIP121 TIP122 TIP125 TIP126 TIP127 NPN PNP TIP120 TIP121 TIP122 TIP125 TIP126 TIP127 20 000 20 000 VCE 4 0 V Vge 4 0 V 10 000 10 000 z 7000 5000 S 5000 2 Ty 150 C 2 Ty 150 C Gi 3000 3000 5 2000 25 C 2000 25 C Oo Ce oO 6 S 1000 55 C T 1000 te i 70

MOTOROLA TIP120 TIP121 TIP122 TIP122 TIP125 TIP126 TIP127 handbook

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