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MOTOROLA NPN TIP110* TIP111* TIP112* PNP TIP115* TIP116* TIP117* handbook

1. Ic COLLECTOR CURRENT AMPS E Ic COLLECTOR CURRENT AMPS z BONDING WIRE LIMITED BONDING WIRE LIMITED UE MITE THERMALLY LIMITED Tc 25 C SINGLE PULSE TC 25 C SINGLE PULSE Serene eee noon IED SECONDARY BREAKDOWN LIMITED TI rala l l CURVES APPLY BELOW Das CURVES APPLY BELOW an ne ee TIP117 RATED CEO TIP112 1 0 10 40 60 80100 4 0 10 60 80100 VCE COLLECTOR EMITTER VOLTAGE VOLTS VCE COLLECTOR EMITTER VOLTAGE VOLTS Figure 5 TIP115 116 117 Figure 6 TIP110 111 112 200 There are two limitations on the power handling ability of a transistor average junction temperature and second break Tc 25 C down Safe operating area curves indicate Ic VCE limits of 100 the transistor that must be observed for reliable operation ri 70 i e the transistor must not be subjected to greater dissipa e tion than the curves indicate E 50 The data of Figures 5 and 6 is based on T J pk 150 C Q TI Cob Tc is variable depending on conditions Second breakdown x 30 Tt LLH TH pulse limits are valid for duty cycles to 10 provided TJ pk c mR Lib T mL lt 150 C T pk may be calculated from the data in Figure 4 20 EUN At high case temperatures thermal limitations will reduce the P
2. MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by TIP110 D Plastic Medium Power NPN Complementary Silicon Transistors TIP110 designed for general purpose amplifier and low speed switching applications High DC Current Gain TIP1 1 1 hFE 2500 Typ Ic 1 0 Adc s OCollector Emitter Sustaining Voltage 30 mAdc TI P 1 1 L VCEO sus 60 Vdc Min TIP110 TIP115 PNP 80 Vdc Min TIP111 TIP116 100 Vdc Min TIP112 TIP117 TIP 1 15 s Low Collector Emitter Saturation Voltage VCE sat 2 5 Vdc Max Q Ic 2 0 Adc TIP 1 1 6 e Monolithic Construction with Built in Base Emitter Shunt Resistors e TO 220AB Compact Package MAXIMUM RATINGS TIP117 Motorola Preferred Device DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS Emitter Base Voltage 60 80 100 VOLTS Collector Current Continuous 50 WATTS Peak Base Current Total Power Dissipation Tc 25 C Derate above 25 C Total Power Dissipation TA 25 C Derate above 25 C Unclamped Inductive Load Energy Figure 13 CASE 221A 06 TO 220AB 3 0 60 2 0 40 1 0 20 Pp POWER DISSIPATION WATTS 0 20 40 60 80 100 120 140 160 T TEMPERATURE C Figure 1 Power Derating Preferred devices are Motorola recommended choices for future use and best overall value REV 1 Motorola Inc 1995 M MOTOROLA TIP110 TIP111 TIP112 TIP115
3. ALLOWED INCHES MILLIMETERS MIN MAX MIN MAX 0 570 0 620 1448 15 75 0 380 0 405 9 66 10 28 0 160 0 190 4 07 4 82 0 025 0 035 0 64 0 88 0 142 0 147 3 61 3 73 0 095 0 105 242 2 66 0 110 0 155 2 80 3 93 0 018 0 025 046 0 64 0 500 0 562 12 70 14 27 0 045 0 060 1 15 1 52 0 190 0 210 4 83 5 93 0 100 0 120 254 3 04 0 080 0 110 2 04 2 79 0 045 0 055 1 15 1 39 0 235 0 255 5 97 6 47 0 000 0 050 0 00 1 27 0 045 115 0 080 204 e N c A o o z r c r o no jo jw gt STYLE 1 PIN1 BASE 2 COLLECTOR 3 EMITTER 4 COLLECTOR CASE 221A 06 TO 220AB ISSUE Y Motorola reserves the right to make changes without further notice to any products herein Motorola makes no warranty representation or guarantee regarding the suitability of its products for any particular purpose nor does Motorola assume any liability arising out of the application or use of any product or circuit and specifically disclaims any and all liability including without limitation consequential or incidental damages Typical parameters can and do vary in different applications All operating parameters including Typicals must be validated for each customer application by customer s technical experts Motorola does not convey any licen
4. NP power that can be handled to values less than the limitations NPN imposed by second breakdown 10 0 040 060 1 02 040610 20 4060 10 20 40 VR REVERSE VOLTAGE VOLTS Figure 7 Capacitance Motorola Bipolar Power Transistor Device Data 3 TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 VcE COLLECTOR EMITTER VOLTAGE VOLTS hee DC CURRENT GAIN V VOLTAGE VOLTS NPN PNP TIP110 111 112 TIP115 116 117 6 0k T T T Voge 3 0V 4 0k Ty 125 C z 30k 3 25 C E 20k lu tc E a 55 C 10k ea ui 800 Lu 600 400 300 300 004 006 01 02 04 06 10 20 40 0 04 0 06 0 1 02 O04 06 10 20 40 Ic COLLECTOR CURRENT AMP Ic COLLECTOR CURRENT AMP Figure 8 DC Current Gain VCE COLLECTOR EMITTER VOLTAGE VOLTS Q1 02 05 10 20 50 10 20 50 100 01 02 05 10 20 50 10 2 50 100 p BASE CURRENT mA Ip BASE CURRENT mA Figure 9 Collecto
5. TIP116 TIP117 ELECTRICAL CHARACTERISTICS Tc 25 C unless otherwise noted iy ee Se rb IE OFF CHARACTERISTICS Collector Emitter Sustaining Voltage 1 Ic 30 mAdc Ip 0 TIP110 TIP115 TIP111 TIP116 TIP112 TIP117 Collector Cutoff Current VCE 30 Vac Ip 0 VCE 40 Vdc IB 0 VCE 50 Vac Ip 0 TIP110 TIP115 TIP 111 TIP116 TIP112 TIP117 Collector Cutoff Current VcB 60 Vac Ig 0 TIP110 TIP115 VcB 80 Vac Ig 0 TIP111 TIP116 VcB 100 Vdc IE 0 TIP112 TIP117 ON CHARACTERISTICS 1 DC Current Gain Ic 1 0 Adc Vcg 4 0 Vdc Ic 2 0 Adc Vcg 4 0 Vdc Collector Emitter Saturation Voltage Ic 2 0 Adc Ig 8 0 mAdc Base Emitter On Voltage Ic 2 0 Adc VcE 4 0 Vdc DYNAMIC CHARACTERISTICS Small Signal Current Gain Ic 0 75 Adc VCE 10 Vdc f 1 0 MHz Output Capacitance VcB 10 Vac IE 0 f 0 1 MHz TIP115 TIP116 TIP117 TIP110 TIP111 TIP112 1 Pulse Test Pulse Width lt 300 us Duty Cycle lt 2 4 0 f T TTTT T T V N E Rp amp Rc VARIED TO OBTAIN DESIRED CURRENT LEVELS 4 N tg Vo A PIER D41 MUST BE FAST RECOVERY TYPE eg MN CB J 1N5825 USED ABOVE Ip 100 mA Rc 2 0 azp MSD6100 USED BELOW Ip 100 mA SCOPE Ne LA A Vo E N LT tf approx u 10 8 0V 0 8 Pd tr 0 06 XL V4 Sat
6. ee a oe oe ee oni 4 0V oaa LE l za L i sey 25 us for tg and ty D4 is disconnected LC K td VBE off 0 lt 10 and V 0 Rg and R are varied PNP Bb EY ever 1 0 to obtain desired test currents 02 NP F For NPN test circuit reverse diode 0 04 0 06 0 1 0 2 0 4 0 6 1 0 2 0 4 0 polarities and input pulses Figure 2 Switching Times Test Circuit Ic COLLECTOR CURRENT AMP Figure 3 Switching Times Motorola Bipolar Power Transistor Device Data TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 1 0 Lu 0 7 D 0 S 05 2 to 8 0 3 ue meg 02 lt LU E 0 1 wW lt K P IZ ZoJC t r t ReJC pk E amp 0 07 0 05 Rouc 2 5 C W MAX A m 0 05 E D CURVES APPLY FOR POWER Z xL PULSE TRAIN SHOWN n cs E READ TIME AT ty gn zz 00 TJ pk TC P pk ZeJC t S A SINGLE PULSE pk pk t DUTY CYCLE D ty to 0 01 0 01 0 02 005 01 02 05 10 20 50 10 20 50 100 200 500 10k t TIME ms Figure 4 Thermal Response ACTIVE REGION SAFE OPERATING AREA 10 10 4 0 2 0 TJ 150 C Ty 150 C
7. p Design NET com 51 Ting Kok Road Tai Po N T Hong Kong 852 26629298 AA MOTOROLA o TIP110 D
8. r Saturation Region 22 22 r1 L TJ 25 C Ty 29 C 1 8 1 8 S VBE sat Ic lp 250 1 4L VBE sat Ic lp 250 VBE Vcg 30 V S 14 VBE VcE 3 0 V lu 2 1 0 10 VCE sat Ic lp 250 VCE sat lc lg 250 0 6 0 6 0 2 0 2 0 04 0 06 0 1 02 04 06 10 2 0 4 0 0 04 0 06 0 1 0 2 04 06 41 0 2 0 4 0 Ic COLLECTOR CURRENT AMP Ic COLLECTOR CURRENT AMP Figure 10 On Voltages Motorola Bipolar Power Transistor Device Data TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 Motorola Bipolar Power Transistor Device Data NPN PNP TIP110 111 112 TIP115 116 117 _ 08 TTTTT T T T T _ 08 Iaith ot veto T T T o L APPLIES FOR lc lg lt hrg 3 o APPLIES FOR lo lg lt hpg 3 gt p 0 E E 2 E G 0 8 a 0 8 25 C to 150 C o o E 48 25 C to 150 C S 1 8 evc fo
9. r VCE sat tu 24 9vc for VCE sat D 24 55 C to 25 C 5 55 C to 25 C E 32 25 C to 150 C d 32 25 C to 150 C o C VC for VBE E T REO o Ri 40 55 C to 25 C E 4 0 evc for vee 55 C to 25 C E H E 48 48 0 04 0 06 0 1 0 2 0 4 0 6 1 0 2 0 4 0 0 04 0 00 0 1 0 2 0 4 0 6 1 0 2 0 4 0 Ic COLLECTOR CURRENT AMP Ic COLLECTOR CURRENT AMP Figure 11 Temperature Coefficients 105 105 REVERSE FORWARD REVERSE FORWARD 10 404 ci CE E 3 E 3 g 10 EE vepes0v 10 E Vog 30V oc cc d d c 10 2 102 E Ty 150 C E MTS T 40 qoi E Q Q o o 100 C 100 L 100 C 100 25 C 25 C 1071 1071 0 6 04 0 2 0 02 04 406 08 10 12 14 0 6 04 0 2 0 02 04 06 08 10 12 14 Var BASE EMITTER VOLTAGE VOLTS Var BASE EMITTER VOLTAGE VOLTS Figure 12 Collector Cut Off Region TEST CIRCUIT VOLTAGE AND CURRENT WAVEFORMS gt tw 3 5 ms SEE NOTE A 9 Vcg MONITOR OV INPUT VOLTAGE 5V e 100 ms s COLLECTOR WA CURRENT VCER COLLECTOR VOLTAGE 20V Mp VCE sat Note A Input pulse width is increased until ICM 0 71 A NPN test shown for PNP test reverse all polarity and use MJE224 driver Figure 13 Inductive Load Switching 5 TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 PACKAGE DIMENSIONS SEATING NOTES PLANE 1 DIMENSIONING AND TOLERANCING PER ANSI Y14 5M 1982 2 CONTROLLING DIMENSION INCH 3 DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE
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MOTOROLA NPN TIP110* TIP111* TIP112* PNP TIP115* TIP116* TIP117* handbook

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