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ST VND5E160ASO-E handbook

1. V Var E e DI Voc hd id Main MOSn N 41y M N a PU_CMD Overtemperature lour Kx RE Ro p 4 PUZ B d i Y OL OFF A ISENSEH SS Q Pwr_Lim Yo lotar CS_DIS Y OUTn ILorrr VSENSEH CURRENT e SENSEn GND Load Rprot i Rep To uC ADC L Rsense lt Vsense A Short to Vcc and off state open load detection Short to Vcc A short circuit between Vcc and output is indicated by the relevant current sense pin set to VsenseH during the device off state Little or no current is delivered by the current sense during the on state depending on the nature of the short circuit Off state open load with external circuitry Detection of an open load in off mode requires an external pull up resistor Rpy connecting the output to a positive supply voltage Vpy Doc ID 022480 Rev 4 ky VND5E160ASO E Application information It is preferable that Vpy is switched off during the module standby mode to avoid an increase in the overall standby current consumption in normal conditions that is when the load is connected An external pull down resistor Rpp connected between output and GND is mandatory to avoid misdetection in case of floating outputs in off state see Figure 33 Current sense and diagnostic Rpp must be selected in order to ensure Voyt lt VoLmin unless pulled up by the exter
2. GAPGCFT00650 Note Layout condition of Rth and Zth measurements PCB Double layer Thermal Vias FR4 area 77 mm x 86 mm PCB thickness 1 6 mm Cu thickness 70 um front and back side Copper areas from minimum pad lay out to 8 cm2 Figure 36 Rinj amb VS PCB copper area in open box free air condition one channel ON RTHjamb 65 60 RTHjamb 55 50 45 40 35 3 0 T T T T T eo al o al N o N al 30 GAPGRI00066 ky Doc ID 022480 Rev 4 29 37 Package and PC board thermal data VND5E160ASO E Figure 37 SO 16L thermal impedance junction ambient single pulse one channel ON ZTH C W 100 Cu 24 cm2 __ Cu 6 cm2 Cu foot print 10 1 0 01 0 1 1 F 10 100 1000 Time s Equation 1 pulse calculation formula eme By e where tp T Figure 38 Thermal fitting model of a double channel HSD in SO 16L GAPGRI00068 a The fitting model is a semplified thermal tool and is valid for transient evolutions where the embedded protections power limitation or the
3. 4 37 Block diagrams iliis aa E ede ke oa Dre ee eda RUE HA 5 Configuration diagram top view ooocoococcoc e men 6 Current and voltage conventions LL 7 Current sense delay characteristics 13 Open load off state delay timing 13 Switching characteristics e 13 Delay response time between rising edge of output current and rising edge of current sense CS enabled eoo atid wale Eu xy ROC Tees ARE See a FED aa 14 Output voltage drop limitation LL 14 lout Isense vs lout 2 eese rrr 15 Maximum current sense ratio drift vs load Current 15 Normal operation 18 Overload or short to GND 18 Intermittent overload LL 19 Off state open load with external circuitry Li 19 SBOGEFEIO ezio lee ira ie aa aa ra e e 20 T evolution in overload or short to GND ii E dd e 20 Off state output current LL 21 High level input current 21 Input clamp voltage 21 Input low level uem e mx Ri be ee Ea Es Ra 21 Input high levels 2 iia tom ice etg Rhen eoo bus eie ee ESA 21 Input hysteresis voltage RR IRI 21 Oristate resistance VS Togggi a iat wines na A DOS e bc R aa aie e OSCAR Ue aca 22 On state resistance VS V Errar A ea deg deca Pied E den dll 22 Undervoltage shutdown o o ccocccco rm 22 Turn on voltage S lOPe oooccooco m e 22 li iMH VS Toase NE RL TRIO de ky ARIE da e RC CT ANITA dan C IEEE was RITA A TI E RI RT 22 Turn off voltage slope 6 ee ete tees 22 CS DIS high level voltage 0
4. Current sense and diagnostic The current sense pin performs a double function see Figure 33 Current sense and diagnostic e Current mirror of the load current in normal operation delivering a current proportional to the load current according to a known ratio Kx The current Isense can be easily converted to a voltage Vsense by means of an external resistor Rgense Linearity between lour and Vsense is ensured up to 5 V minimum see parameter Vsenge in Table 9 Current sense 8 V lt Vcc lt 18 V The Doc ID 022480 Rev 4 25 37 Application information VND5E160ASO E 3 4 1 26 37 current sense accuracy depends on the output current refer to current sense electrical characteristics Table 9 Current sense 8 V lt Vcc lt 18 V e Diagnostic flag in fault conditions delivering a fixed voltage VsenseH up to a maximum current Iseysen in case of the following fault conditions refer to Table 11 Truth table Power limitation activation Overtemperature Short to Vec in off state Open load in off state with additional external components A logic level high on CS DIS pin simultaneously sets all the current sense pins of the device in a high impedance state thus disabling the current monitoring and diagnostic detection This feature allows multiplexing of the microcontroller analog inputs by sharing the sense resistance and ADC line among different devices Figure 33 Current sense and diagnostic
5. Vcc diode VE Voltage lour 0 6 A T 150 C 07 V 1 For each channel 2 PowerMOS leakage included Table 6 Switching Vcc 13 V Tj 25 C Symbol Parameter Test conditions Min Typ Max Unit ta on Turn on delay time Ri 13 Q see Figure 6 10 us ta off Turn off delay time RL 13 see Figure 6 15 us dVout dt on Turn on voltage slope Rp 2130 See Figure 26 V us dVoyrt dt of Turn off voltage slope R 2130 See Figure 28 V us Switching energy n sa u Wow jasses GUNNO o R 13 Q see Figure 6 0 03 mJ Switching energy i u Worr losses during ts RL 13 Q see Figure 6 0 02 mJ Doc ID 022480 Rev 4 9 37 Electrical specifications VND5E160ASO E Table 7 Logic inputs Symbol Parameter Test conditions Min Typ Max Unit Vit Input low level voltage 0 9 V li Low level input current Vin 0 9 V 1 pA Vin Input high level voltage 2 1 V ll High level input current Vin 2 1V 10 pA Vinysy Input hysteresis voltage 0 25 V lin 1 mA 5 5 7 V Vic Input clamp voltage lin 1 mA 0 7 VespL CS_DIS low level voltage 0 9 V lespL Low level CS DIS current Vcsp 0 9 V 1 pA Veson CS_DIS high level voltage 2 1 V lcspu High level C8 DIS current Vcgp 2 1 V 10 pA Vcsp hysi CS DIS hysteresis voltage 0 25 V lcsp 1 mA 5 5 7 V
6. 0 V Off state output current IN i ILDE at Van id Vsense VsenseH Vout 50 90 HA SHE falling from Voc to 2 V Delay response from output rising edge to Vout 4 V Vin 20V bod Vsense rising edgein Vgense 90 of Vsensen Sc pee open load Figure 4 Current sense delay characteristics INPUT El E i a CS DIS S Leu LOAD CURRENT EE E a e SENSE CURRENT Lo ee ipseNsEzH tDSENSE1L tbsENSE1H tDSENSE2L S Doc ID 022480 Rev 4 VND5E160ASO E Electrical specifications Figure 5 Open load off state delay timing OUTPUT STUCK TO Vec Vin J Vout gt VoL VSENSEH Ves tpsTKON 4 amp Figure 6 Switching characteristics Vour gt t ky Doc ID 022480 Rev 4 13 37 Electrical specifications VND5E160ASO E Figure 7 Delay response time between rising edge of output current and rising edge of current sense CS enabled I I AtpsENSE2H I IOUTMAX I SENSE ISENSEMAX 90 ISENSEMAX Figure 8 Output voltage drop limitation Yevon Tj 150 C Tj 25 C 40 C Von Von Ron T p gt lout 14 37 Doc ID 022480 Rev 4 ky VND5E160ASO E Note Electrical specifications Figure 9 lout Isense VS lout lout Isense 700 650 j 40 150 600 max Tj 0 C to 150 C max Tj 25 C to
7. 00 tee 23 CS DIS clamp voltage ce teens 23 CS DIS low level voltage LL 23 Application schematica 24 Current sense and diagnostici 26 Maximum turn off current versus inductance for each channel 28 SO 16L PG board load i iaia bee A ia are 29 Rthj amb vs PCB copper area in open box free air condition one channel ON 29 SO 16L thermal impedance junction ambient single pulse one channel ON 30 Thermal fitting model of a double channel HSD in SO 16L o 30 SO 16L package dimensions LL 32 SO 16L tube shipment no SU IX ooooocoocoocccce 34 SO 16L tape and reel shipment suffix TR LL 34 Doc ID 022480 Rev 4 ky VND5E160ASO E Block diagram and pin description 1 Block diagram and pin description Figure 1 Block diagram Voc Signal Clamp Bm gt e e Undervoltage Control amp Diagnostic 1 Power Clamp A INI DRIVER e E to IN2 Von CH1 Limitation 5 a o ez pm be e an OFF State i s 4 Open load ad o Chie cs ia DIS E VSENSEH 6 O esi O Current S ose oe OUT2 OUT1 OVERLOAD PROTECTION LOGI
8. 150 C 550 0 35 0 58 0 81 1 04 1 27 1 5 lout A Figure 10 Maximum current sense ratio drift vs load current dk k 15 4 lour A Parameter guaranteed by design it is not tested Doc ID 022480 Rev 4 15 37 Electrical specifications 16 37 VND5E160ASO E Table 11 Truth table Conditions Input Output Sense Vesp 0 V Normal operation L 0 B H H Nominal Overtemperature E 3 H L VSENSEH L L 0 It Undervoltage 4 L 0 H X Nominal no power limitation Overload no p H Cycling VSENSEH power limitation Short circuit to GND L L 0 Power limitation H L VSENSEH Open load off state with L H V external pull up SENSEH Short circuit to V L H VSENSEH external pull up 4 4 Nominal disconnected lt inomna Negative output voltage L L 0 clamp 1 and external circuit Doc ID 022480 Rev 4 If the Vegp is high the SENSE output is at a high impedance its potential depends on leakage currents 2 VND5E160ASO E Electrical specifications Table 12 Electrical transient requirements part 1 Eo 1 Burst cycle pulse ISO 7637 2 Test levels Number of repetition time Delays and 2004 E pulses or I d Test pulse test times A MpecancE 111 IV Min Max 1 75V 100V 5000 pulses 0 5s 5s 2 ms 100 2a 37V 50V 5000 pulses 0 2s 5s 50us 2Q 3a 100V 150V th 90ms 100ms 0 1us 50Q 3b 75V 100V th 90ms 100ms 0 1p
9. 17 Table 18 Pin fUNCHON occ suae e ad a a ee ee 5 Suggested connections for unused and not connected pins 6 Absolute maximum ratings 7 Thermal data tea eee RU Ra Le aa aa ea 8 Power Section iii e pani ae eae ce e te a E a 9 Switching Vcc 13 V Tj 25 C iD A a ROSES 9 Logic inputs lile mese er Rea mace sa pg Rs DR UD Re ee ee RI 10 Protections and diagnostics LL 10 Current sense B V lt Vec lt 18 V corri cix e ead sede e E e ea 11 Open load detection 8 V lt Vec lt 18 Vila ose wei tee a 12 Truthitable ovio iuvene A PUR edu E GOMA Rx RR a 16 Electrical transient requirements part 1 liliis essen 17 Electrical transient requirements part 2 LL 17 Electrical transient requirements part 3 LL 17 Thermal parameters 0 0 00 cece le n 31 SO 16L mechanical data 33 Device SUMMA a crcire hr hh 35 Document revision history LL 36 Doc ID 022480 Rev 4 3 37 List of figures VND5E160ASO E List of figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Figure 11 Figure 12 Figure 13 Figure 14 Figure 15 Figure 16 Figure 17 Figure 18 Figure 19 Figure 20 Figure 21 Figure 22 Figure 23 Figure 24 Figure 25 Figure 26 Figure 27 Figure 28 Figure 29 Figure 30 Figure 31 Figure 32 Figure 33 Figure 34 Figure 35 Figure 36 Figure 37 Figure 38 Figure 39 Figure 40 Figure 41
10. 700 10 E 600 JN 8 500 L_ 6 400 300 4 200 2 100 0 0 50 25 0 25 50 75 100 125 150 175 50 25 0 25 50 75 100 125 150 175 Te C Te C Figure 27 linn VS Tease Figure 28 Turn off voltage slope limh A dVout dt JOff V ms 20 1400 1300 o Vec 13V Vec 13V is 120 Rle 13 Ohm a 1100 J 1000 P lt 10 N 900 gt 800 DI be 5 700 L 600 0 500 50 25 0 25 50 75 100 125 150 50 25 0 25 50 75 100 125 150 175 22 37 Doc ID 022480 Rev 4 VND5E160ASO E Electrical specifications Figure 29 CS DIS high level voltage Figure 30 CS DIS clamp voltage Vesdh V Vesdcl V 4 10 3 5 9 8 7 lin 14mA 1 3 7 25 se ToT 2 5 15 IM a i 3 3 1 2 0 5 1 0 0 50 25 0 25 50 75 100 125 150 175 50 25 50 75 100 125 150 175 Tc C Tc C Figure 31 CS DIS low level voltage Vcsdl V 3 2 5 2 1 5 0 5 0 50 25 0 25 50 75 100 125 150 175 Doc ID 022480 Rev 4 23 37 Application information VND5E160ASO E 3 Application information Figure 32 Application schematic 5V Rorot MCU Rprot Note Channel 2 has the same internal circuit as channel 1
11. Current sense ratio lour 0 35 A Vsense 0 5 V i a drift Vcsp 0 V Tj 40 C to 150 C p TS lout 0 5 A Vsense 4 V Vesp 0 V Ko lout ISENSE T 40 C 150 C 370 460 550 T 25 C 150 C 390 460 510 Current sense ratio lout 0 5 A Vsense 4 V KK 7 8 8 KK drift Vcsp 0 V T 40 C to 150 C lout 1 5 A Vgense 4 V Vcsp 0 V K3 lout ISENSE T 40 C 150 C 400 430 470 Tj 25 C 150 C 410 430 460 1 Current sense ratio lout 1 5 A VSENSE 4V Vcsp 20V _ HE drift Tj 40 C to 150 C M Ba lout 0 A Vsense 9V Vcsp 5 V y 1 pA Vin 0 V Tj 40 C 150 C Analog sense lout 0A VSENSE 0V Vcsp 0V ISENSEO leakage current Vin 5 V Tj 40 C 150 C 2 pA lout 7 0 6 A Vsense 0 V Veso 5V y 1 pa Vin 5 V Ti 40 C 150 C Open load on state LEN lot current detection Mu i his Ao Veo s Tai 1 5 mA threshold SENSE 9 H Max analog Vsense senseoutput lout 1 5 A Vegp 0 V 5 V voltage Analog sense VeeNsEH P output voltage in Voc 13 V RsENsE 3 9 KQ 8 V fault condition Analog sense lseNsEH output current in Voc 13 V VsENSE 5V 9 mA fault condition Delay response VSENSE lt 4 V 0 08A lout lt 1 5 A time from falling 90 of tDSENSE1H SENSE 90 of ISENSE max 40 100 us edge of CS_DIS see Figure 4 pin Delay response VSENSE lt 4 V 0 08 A lt lout lt 1 5 A t time from rising 10 of 5 20
12. L 0 40 1 27 k 0 8 ddd 0 10 Doc ID 022480 Rev 4 33 37 Package and packing information VND5E160ASO E 5 3 34 37 Packing information Figure 40 SO 16L tube shipment no suffix Base Q ty 50 Bulk Q ty 1000 Tube length 0 5 532 A 3 5 B 13 8 C 0 1 0 6 All dimensions are in mm GAPGCFT00498 Figure 41 SO 16L tape and reel shipment suffix TR T sale Reel dimensions 40mm min i Access hole x i at slot location poo i w Base Q ty 1000 ra x Bulk Q ty 1000 f Y A max 330 B min 15 C 0 2 13 DC ro ON 0 E F 20 2 G 2 0 16 4 N Y G measured N min 60 ff Tape slat athub T max 22 4 f in core for tape start 25mm min width Tape dimensions Pa According to Electronic Industries Association EIA Standard 481 rev A Feb 1986 Tape width w 16 TOP i Tape Hole Spacing PO 0 1 4 c P O gl Component Spacing P 12 Hole Diameter D 0 1 0 1 5 w F b i Held dell Hole Diameter D1 min 1 5 Hole Position F 0 05 7 5 Compartment Depth K max 6 5 user Direction of Feed Hole Spacing P1 0 1 2 All dimensions are in mm End polo Gao cdo O74 6 0000000 S Top No components Components No components cover la tape 500mm mi
13. Vout SENSE INPUT Vcs pis Figure 14 Off state open load with external circuitry VND5E160ASO E Short to Vec Figure 15 Short to Voc a n 3 ENE p A c I 5 Q aL e Siles Ao SA gt Z N O t 2 n mec EOS een as PORRO O SEO bare a crt c c s o O E 2 zc 20 E o E Ou c B x9 1 J 4 B 3 F BE AEE SEERE A A PA o FO JE o 2 O c E S ol rrr OG X T B d E t o gt a ak ia ac pg i as ES T ae A ii sa e ess MM NM o 2 o o E E E gt E gt gt 5 E o o E 9 A j i Z To r A 3 o9 iL Doc ID 022480 Rev 4 Electrical specifications 20 37 VND5E160ASO E Electrical specifications 2 5 Electrical characteristics curves Figure 17 Off state output current Figure 18 High level input current lloff nA lih uA 300 5 45 250 off State n MEIN Vec 13V Vin Vout 0V 3 5 T 200 j j i j COSE uL 150 2 5 100 H 1 5 Pi 1 50 0 5 0 0 50 25 0 25 50 75 100 125 150 175 50 25 0 25 50 7
14. 3 1 GND protection network against reverse battery This section provides two solutions to implement a ground protection network against reverse battery 3 1 1 Solution 1 resistor in the ground line Rgnp only This can be used with any type of load The following descriptions give an indication on how to size the Renp resistor 1 Renp lt 600mV Is on max 2 Reno 2 CVoo Clap where lanp is the DC reverse ground pin current and can be found in the absolute maximum rating section of the device datasheet Power dissipation in Renp when Vcc lt O during reverse battery situations is Pp Vco Rawp This resistor can be shared amongst several different HSDs Please note that the value of this resistor should be calculated with formula 1 where Is on max becomes the sum of the maximum on state currents of the different devices Please note that if the microprocessor ground is not shared by the device ground then the Renp Will produce a shift Is on max Ranp in the input thresholds and the status output values This shift will vary depending on how many devices are On in case of several high side drivers sharing the same Renp 24 37 Doc ID 022480 Rev 4 ky VND5E160ASO E Application information 3 2 3 3 3 4 If the calculated power dissipation leads to a large resistor or several devices have to share the same resistor then ST suggests to utilize Section 3 1 2 Solution 2 diode DGND in the ground line So
15. 4000 V OUTPUT 5000 V Vcc 5000 V Vesp Charge device model CDM AEC Q100 01 1 750 V Ti Junction operating temperature 40 to 150 C Tag Storage temperature 55 to 150 C 2 2 Thermal data Table 4 Thermal data Symbol Parameter Typical value Unit Rihj peb Thermal resistance junction pcb with one channel ON 21 C W Rihj amb Thermal resistance junction ambient See Figure 36 C W 1 The measure is done in accordance with the JESD 51 8 2 8 37 Doc ID 022480 Rev 4 VND5E160ASO E 2 3 Electrical characteristics Values specified in this section are for 8 V lt Voc lt 28 V 40 C lt T lt 150 C unless otherwise Electrical specifications stated Table 5 Power section Symbol Parameter Test conditions Min Typ Max Unit Vcc Operating supply voltage 4 5 13 28 V Vusp Undervoltage shutdown 3 5 45 V Undervoltage shutdown Vusbhyst hysteresis 0 5 V lout 1 A Tj 25 C 160 ma Ron On state resistance loyr 1 A Tj 150 C 320 ma lout 1 A Voc 5 V Tj 25 C 210 mQ Velamp Clamp voltage lg 20 mA 41 46 52 V Off state Vcc 13V Tj 25 C 2 2 5 2 yA Vin Vout Vsense Vcsp 0 V Is Supply current On state Voc 13V Vin 5V 3 6 mA lout 0A Vin Vou 0 V Vcc 13 V 0 001 3 pA Off state output Tj 25 C L off1 1 f current Vin Vout 0 V Vcc 13 V 0 5 yA Tj 125 C j Output
16. 5 100 125 150 175 Tc C Tc C Figure 19 Input clamp voltage Figure 20 Input low level Vicl V Vil V v 2 6 8 18 lin 1mA me 6 6 F 1 6 6 4 a 14 62 12 6 1 5 8 0 8 5 6 0 6 5 4 0 4 5 2 0 2 5 0 50 25 0 25 50 75 100 125 150 175 50 25 0 25 50 75 100 125 150 175 Tc C Tc C Figure 21 Input high level Figure 22 Input hysteresis voltage Vih V Vihyst V 4 1 3 5 09 0 8 3 0 7 25 0 6 2 0 5 is Peer 0 4 0 3 1 0 2 0 5 0 1 0 0 50 25 0 25 50 75 100 125 150 175 50 25 0 25 50 75 100 125 150 175 Tc C Tc C ky Doc ID 022480 Rev 4 21 37 Electrical specifications Figure 23 On state resistance vs Tease VND5E160ASO E Figure 24 On state resistance vs Vcc Ron mOhm Ron mOhm 300 300 lout 1A Tc 150 C 250 Vee 13V vai 250 si ML LL Te 125 7 200 A 200 Pd 150 oH 150 A To 25 C A T 100 100 SSS SS Se Tc 40 C 50 50 50 25 0 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 40 Tc C Vcc V Figure 25 Undervoltage shutdown Figure 26 Turn on voltage slope Vusd V dVout dt On V ms 16 1000 14 900 800 Vee 13V m RI 13 Ohm
17. ATI VND5E160ASO E Double channel high side driver with analog current sense for automotive applications Datasheet production data Features Max transient supply voltage Voc 41V SO 16L Operating voltage range Voc 4 5 to 28V Max on state resistance per ch Roy 160 mQ GAPGCFT00300 Current limitation typ ILIMH 10A Overtemperature shutdown with Off state supply current ls 2 pal autorestart thermal shutdown 1 Typical value with all loads connected m General Inrush current active management by power limitation Very low standby current 8 0 V CMOS compatible inputs Optimized electromagnetic emissions Very low electromagnetic susceptibility Compliance with European directive 2002 95 EC Very low current sense leakage AEC Q100 qualified m Diagnostic functions Proportional load current sense High current sense precision for wide currents range Current sense disable Off state open load detection Output short to Vcc detection Overload and short to ground power limitation indication Thermal shutdown indication m Protections Undervoltage shutdown Overvoltage clamp Load current limitation Self limiting of fast thermal transients Protection against loss of ground and loss Reverse battery protected Electrostatic discharge protection Application m Alltypes
18. C ACTIVE POWER LIMITATION ES GND Table 1 Pin function Name Function Voc Battery connection OUTPUT Power output Ground connection Must be reverse battery protected by an external GND diode resistor network Voltage controlled input pin with hysteresis CMOS compatible it controls INPUT output switch state CURRENT SENSE Analog current sense pin delivers a current proportional to the load current CS DIS Active high CMOS compatible pin to disable the current sense pin ky Doc ID 022480 Rev 4 5 37 Block diagram and pin description 6 37 VND5E160ASO E Figure 2 Configuration diagram top view Vcc 16 Vcc GND OUTPUT2 INPUT2 OUTPUT2 INPUT1 OUTPUT2 C SENSE1 OUTPUT1 C SENSE2 OUTPUT1 CS DIS OUTPUT1 Vcc 9 Vcc GAPGCFT00527 Table 2 Suggested connections for unused and not connected pins Connection pin Current sense N C Output Input CS_DIS Floating Not allowed X X X X Toground Messor X resistor 10K resistor resistor Doc ID 022480 Rev 4 77 VND5E160ASO E 2 Electrical specifications Electrical specificat ions Figure 3 Current and voltage conventions Ig Voc i Voc Ven lesp louri OUTPUT1 Veco CS_DIS Wound lint CURRENT sensei SENSE1 TUR INPUT1 VSENSE1 4 lout2 IN2 OUTPUT2 INPUT2 Vour2 IN2 CURRENT lsEN
19. E DSENSEIL edge of CS DIS SENSE SENSE max H see Figure 4 pin ky Doc ID 022480 Rev 4 11 37 Electrical specifications VND5E160ASO E 12 37 Table 9 Current sense 8 V lt Vcc lt 18 V continued Symbol Parameter Test conditions Min Typ Max Unit Delay response Vsense lt 4 V 0 08 A lt lout lt 1 5 A tosensezH time from rising Isense 90 Of ISENSE max 30 150 us edge of INPUT pin see Figure 4 Delay response time between rising Vsense lt 4 V edge of output ISENSE 90 of ISENSEMAX A DSENSE H current and rising lout 90 of loutmax ree E edge of current loutmax 1 5 A see Figure 7 sense Delay response Vsense lt 4 V 0 08 A lt lout lt 1 5 A tosensezL time from falling Isense 10 Of ISENSE max 80 250 us edge of INPUT pin see Figure 4 1 Parameter guaranteed by design it is not tested 2 Fault condition includes power limitation overtemperature and open load off state detection Table 10 Open load detection 8 V lt Vcc lt 18 V Symbol Parameter Test conditions Min Typ Max Unit Open load off state See VoL voltage detection Vin OV 2 Fiqure 5 4 V threshold d Output short circuit to tpsrkoN Vcc detection delay at See Figure 5 180 1200 us turn Off Off state output current Vin 0 V Vsense 0 V _ Ioft2 r lat Vout 4V Vout rising from 0 V to 4 V 120 0 HA Vin
20. Vesc CS DIS clamp voltage lcsp 1 mA 0 7 Table 8 Protections and diagnostics 1 Symbol Parameter Test conditions Min Typ Max Unit Voc 13 V 7 10 14 A limg DC short circuit current 5V lt Voc lt 28 V 14 A Short circuit current liim during thermal cycling Voc 13 V TR lt Tj lt iso 2 5 A Ttsp Shutdown temperature 150 175 200 C Tg Reset temperature Trs 1 Trs 5 C Trs Thermal reset of STATUS 135 C Thermal hysteresis T 7 C HYST Trsp Tg Turn off output voltage I 1A Viy 0 VDEMAG clamp oo Vcc 41 Vcc 46 Vec 52 V louT 0 03 A Vos Ou or drop T 40 C 150 C 25 mV limitation see Figure 8 1 To ensure long term reliability under heavy overload or short circuit conditions protection and related diagnostic signals must be used together with a proper software strategy If the device is subjected to abnormal conditions this software must limit the duration and number of activation cycles S 10 37 Doc ID 022480 Rev 4 VND5E160ASO E Electrical specifications Table 9 Current sense 8 V lt Vcc lt 18 V Symbol Parameter Test conditions Min Typ Max Unit lout 0 025 A VsENSE 0 5 V Ko lour lsense Vesp 0 V Tj 40 C 150 C 270 520 730 lout 0 35 A VsENSE 0 5 V Vesp 0 V K lour Isense Tj 40 C 150 C i Tj 25 C 150 C a
21. al data sassari ea Brela la ETE ST ed 8 2 3 Electrical characteristics ee 9 2 4 WOVGIONNS siii rre re 18 2 5 Electrical characteristics curves eee 21 3 Application information eee 24 3 1 GND protection network against reverse battery 24 3 1 1 Solution 1 resistor in the ground line RGND only 24 3 1 2 Solution 2 diode DGND in the ground line 25 3 2 Load dump protection suus usada e ses AA 25 3 3 MCU I Os protection escri arras 25 3 4 Current sense and diagnostic 0 00 c eee eee 25 3 4 1 Short to VCC and off state open load detection 26 3 5 Maximum demagnetization energy VCC 13 5 V 28 4 Package and PC board thermal data 29 4 1 SO 16L thermal data amp sso a RA RE RARE aiar as eee 29 5 Package and packing information 32 5 1 ECOPAOK packages nenita Rie pr a hada she 32 5 2 Package mechanical data eee 32 5 3 Packing information igor rie bhe eee qe adque 34 6 Order codes iniciara nares bien a haere eh ene eR 35 7 Revision history iii iii eee 36 2 37 Doc ID 022480 Rev 4 ky VND5E160ASO E List of tables List of tables Table 1 Table 2 Table 3 Table 4 Table 5 Table 6 Table 7 Table 8 Table 9 Table 10 Table 11 Table 12 Table 13 Table 14 Table 15 Table 16 Table
22. d by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever any liability of ST ST and the ST logo are trademarks or registered trademarks of ST in various countries Information in this document supersedes and replaces all information previously supplied The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners 2012 STMicroelectronics All rights reserved STMicroelectronics group of companies Australia Belgium Brazil Canada China Czech Republic Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Philippines Singapore Spain Sweden Switzerland United Kingdom United States of America www st com ky Doc ID 022480 Rev 4 37 37
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24. lution 2 diode Dgnp in the ground line A resistor Ranp 1 KQ should be inserted in parallel to Denp if the device drives an inductive load This small signal diode can be safely shared amongst several different HSDs Also in this case the presence of the ground network will produce a shift 600mV in the input threshold and in the status output values if the microprocessor ground is not common to the device ground This shift will not vary if more than one HSD shares the same diode resistor network Load dump protection Dig is necessary Voltage Transient Suppressor if the load dump peak voltage exceeds the Vcc maximum DC rating The same applies if the device is subject to transients on the Voc line which are greater than the ones shown in the ISO 7637 2 2004 E table MCU I Os protection If a ground protection network is used and negative transient are present on the Vcc line the control pins are pulled negative ST suggests to insert a resistor Rorot in line to prevent the microcontoller I O pins from latching up The value of these resistors is a compromise between the leakage current of microcontoller and the current required by the HSD I Os Input levels compatibility with the latch up limit of microcontoller I Os Vecpeak llatchup s Rorot s VoHuc ViH Venp IIHmax Calculation example For Vecpeak 100V and liatehup 2 20mA Voyyc 2 4 5V 5kQ lt Rprot 180kQ Recommended values Rprot 10kQ Cgyr 10nF
25. n Empty components pockets 500mmmin _ BW saled with cover tape N User Direction of Feed User direction of feed GAPGCFT00499 Doc ID 022480 Rev 4 ky VND5E160ASO E 6 Order codes Order codes Table 17 Device summary Order codes Package Tube Tape and reel SO 16L VND5E160ASO E VND5E160ASOTR E Doc ID 022480 Rev 4 35 37 Revision history 7 36 37 Revision history Table 18 Document revision history VND5E160ASO E Date Revision Changes 06 Dec 2011 1 Initial release 19 Dec 2011 2 Updated Figure 2 45 Mar 2012 3 ni 5 Package and packing information and update 26 June 2012 4 Update Table 4 Doc ID 022480 Rev 4 VND5E160ASO E Please Read Carefully Information in this document is provided solely in connection with ST products STMicroelectronics NV and its subsidiaries ST reserve the right to make changes corrections modifications or improvements to this document and the products and services described herein at any time without notice All ST products are sold pursuant to ST s terms and conditions of sale Purchasers are solely responsible for the choice selection and use of the ST products and services described herein and ST assumes no liability whatsoever relating to the choice selection or use of the ST products and services described herein No license express or implied by estoppel or otherwise to any intell
26. nal circuitry Vour Pull up _OFF Rpp Drogo lt VoLmin 2V Rpp lt 22 KQ is recommended For proper open load detection in off state the external pull up resistor must be selected according to the following formula Rpp Voy Roy Rpp Io V E OUT Pull up ON Rag Rpp gt Tana 4V For the values of Voi min VoL max L off2 r ANA l orto See Table 10 Open load detection 8 V lt Voc lt 18 V ky Doc ID 022480 Rev 4 27 37 Application information VND5E160ASO E 3 5 Maximum demagnetization energy Vcc 13 5 V Figure 34 Maximum turn off current versus inductance for each channel 100 10 A C 1 0 1 UU N 0 1 1 L mH 10 100 A Tistart 150 C single pulse B Tistart 100 C repetitive pulse C Tistart 125 C repetitive pulse Vine IL A Demagnetization Demagnetization Demagnetization t Note Values are generated with R 09 In case of repetitive pulses Tis at the beginning of each demagnetization of every pulse must not exceed the temperature specified above for curves A and B 28 37 Doc ID 022480 Rev 4 ky VND5E160ASO E Package and PC board thermal data 4 Package and PC board thermal data 4 1 SO 16L thermal data Figure 35 SO 16L PC board S0 16 16 Lar Footprint IST presta ST
27. of resistive inductive and capacitive loads m Suitable as LED driver Description The VND5E160ASO E is a single channel high side driver manufactured using ST proprietary VIPower MO 5 technology and housed in SO 16L package The device is designed to drive 12 V automotive grounded loads and to provide protection and diagnostics It also implements a 3 V and 5 V CMOS compatible interface for use with any microcontroller The device integrates advanced protective functions such as load current limitation inrush and overload active management by power limitation overtemperature shut off with auto restart and overvoltage active clamp A dedicated analog current sense pin is associated with every output channel providing enhanced diagnostic functions including fast detection of overload and short circuit to ground through power limitation indication overtemperature indication short circuit to Vcc diagnosis and on state and off state open load detection The current sensing and diagnostic feedback of the whole device can be disabled by pulling the CS DIS pin high to share of Voc the external sense resistor with similar devices June 2012 Doc ID 022480 Rev 4 1 35 This is information on a product in full production www st com Contents VND5E160ASO E Contents 1 Block diagram and pin description 5 2 Electrical specifications iii 7 2 1 Absolute maximum ratings 7 2 2 Therm
28. rmal cycling during thermal shutdown are not triggered ky Doc ID 022480 Rev 4 30 37 VND5E160ASO E Package and PC board thermal data Table 15 Thermal parameters Area island cm Footprint 2 8 R1 C W 1 2 R2 C W 3 5 R3 C W 5 R4 C W 8 6 6 R5 C W 14 13 13 R6 C W 28 20 14 5 R7 C W 1 2 R8 C W 3 5 C1 W s C 0 0008 C2 W s C 0 003 C3 W s C 0 1 C4 W s C 0 5 C5 W s C 1 1 5 1 5 C6 W s C 3 9 12 C7 W s C 0 0008 C8 W s C 0 003 Doc ID 022480 Rev 4 31 37 Package and packing information VND5E160ASO E 5 5 1 5 2 32 37 Package and packing information ECOPACK packages In order to meet environmental requirements ST offers these devices in different grades of ECOPACK packages depending on their level of environmental compliance ECOPACK specifications grade definitions and product status are available at www st com ECOPACK is an ST trademark Package mechanical data Figure 39 SO 16L package dimensions C hx45 SEATING PIN IDENTIFICATION GAPGCFT00497 Doc ID 022480 Rev 4 ky VND5E160ASO E Package and packing information Table 16 SO 16L mechanical data Millimeters Symbol Min Typ Max A 2 35 2 65 Al 0 10 0 30 B 0 33 0 51 C 0 23 0 32 D 10 10 10 50 E 7 40 7 60 e 1 27 H 10 00 10 65 h 0 25 0 75
29. s 500 4 6V 7V 1 pulse 100ms 0 010 5b 65V 87V 1 pulse 400ms 20 1 The above test levels must be considered referred to Voc 13 5 V except for pulse 5b 2 Valid in case of external load dump clamp 40 V maximum referred to ground Table 13 Electrical transient requirements part 2 2004E Test pulse 1 ISO 7637 2 Test level results 2a 5p 1 Valid in case of external load dump clamp 40 V maximum referred to ground O Oj O O O O Table 14 Electrical transient requirements part 3 Class Contents E One or more functions of the device did not perform as designed after exposure to disturbance and cannot be returned to proper operation without replacing the device Doc ID 022480 Rev 4 17 37 VND5E160ASO E Electrical specifications Waveforms 2 4 Normal operation Figure 11 Normal operation INPUT Nominal load Nominal load lout VSENSE Figure 12 Overload or short to GND Overload or Short to GND Power Limitation INPUT Thermal cycling VSENSE Doc ID 022480 Rev 4 18 37 Electrical specifications Intermittent Overload Intermittent overload Figure 13 INPUT ILimL gt VSENSE VND5E160ASO E 19 37 OFF State Open Load with external circuitry Doc ID 022480 Rev 4
30. sE2 SENSE GND VsENSE2 4 1 lGND Note 2 1 Ven Vourn Vcc during reverse battery condition Absolute maximum ratings Stressing the device above the rating listed in Table 3 Absolute maximum ratings may cause permanent damage to the device These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied Exposure to the conditions in table below for extended periods may affect device reliability Table 3 Absolute maximum ratings Symbol Parameter Value Unit Vcc DC supply voltage 41 V Vcc Reverse DC supply voltage 0 3 V lanp DC reverse ground pin current 200 mA lour DC output current Internally limited A lour Reverse DC output current 6 A lin DC input current 1 to 10 mA lcsp DC current sense disable input current 1to 10 mA lesense DC reverse CS pin current 200 mA Vosense Current sense maximum voltage bow Maximum switching energy single pulse Emax L 12 mH Ry 0 Q Vpat 13 5 V Tjstan 150 C 34 mJ lout llimL TYP ky Doc ID 022480 Rev 4 7 37 Electrical specifications VND5E160ASO E Table 3 Absolute maximum ratings continued Symbol Parameter Value Unit Electrostatic discharge Human Body Model R 1 5 KQ C 100 pF INPUT 4000 V Vesp CURRENT SENSE 2000 V CS DIS

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