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ST VN5E050MJ-E handbook

1. Vesdh V Vesdcl V 4 10 9 3 5 8 lin 1 mA 7 2 5 6 2 5 4 1 5 3 1 2 0 5 1 0 0 50 25 0 25 50 75 100 125 150 175 PO des 28 90 fa HOP des 180 3 Tc C Teto Figure 28 CS_DIS low level voltage Vcsdl V 3 2 5 2 1 5 0 5 0 50 25 0 25 50 75 100 125 150 175 To C 22 35 Doc ID 16611 Rev 1 ky VN5E050MJ E Application information 3 3 1 Application information Figure 29 Application schematic 5V Barot Dia MCU 1 Barat IINPUT LA k eK i 6 123 OUTPUT E 1 ra Haat CURRENT SENSE DN f GND i i d i RsENsE Reno L i i Vann Denn i i GND protection network against reverse battery This section provides two solutions for implementing a ground protection network against reverse battery Solution 1 resistor in the ground line Rcnp only This can be used with any type of load The following show how to dimension the Renp resistor 1 Renp lt 600mV Is on max 2 Reno gt CVeo lanp where lanp is the DC reverse ground pin current and can be found in the absolute maximum rating section of the device datasheet Pow
2. Figure 2 Configuration diagram top view TAB Vcc N C 1 y RIA IN C GND 2 11 OUT IN 3 10 OUT CS 4 9 OUT CS DIS 5 8 LOUT N C s 7 IN C Table 2 Suggested connections for unused and not connected pins ics Current sense N C Output Input CS_DIS Floating Not allowed X X X X a E uu au Doc ID 16611 Rev 1 VN5E050MJ E Electrical specifications 2 Note 2 1 Electrical specifications Figure 3 Current and voltage conventions Is Vcc VF Voc lcsp lour _ 1 CS DIS OUT Vcsp Vour lin ISENSE M IN cs Vin VSENSE GND lenp Vr Vout Voc during reverse battery condition Absolute maximum ratings Stressing the device above the rating listed in the Absolute maximum ratings table may cause permanent damage to the device These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability Refer also to the STMicroelectronics SURE Program and other relevant quality document Table 3 Absolute maximum ratings Symbol Parameter Value Unit Vec DC supply voltage 41 V Vcc Reverse DC supply
3. stated Table 5 Power section Symbol Parameter Test conditions Min Typ Max Unit ce Operating supply 45 13 28 V voltage Vysp Undervoltage shutdown 3 5 4 5 V Undervoltage V 0 5 V USDhyst shutdown hysteresis loyt 2A Tj 25 C 50 mQ Row Oncstate resistance lout 2A T 150 C 100 mQ lout 2A Vcc 5V T 25 C 65 mQ Vetamp Clamp voltage Is 20 mA 41 46 52 V Off state Vcc 13V Tj 25 C ls Supply current Vin VouT Vsense Vcsp 0V 20 5 0 uA On state Vcc 1 3V Vin 5V lour 0A 1 5 3 mA Vin Vour 0V Vec 13V T 225 C 0 0 01 3 Off state output current J A Lof j Vin Vour 0V Vcc 13V T 125 C 0 5 T Output Vcc diode VW o SA RG Ve voltage lour 2A Tj 150 C 0 7 V 1 PowerMOS leakage included Table 6 Switching Vcc 13V Te 25 C Symbol Parameter Test conditions Min Typ Max Unit ta on Turn on delay time R 6 50 see Figure 5 20 us ta off Turn off delay time R 6 50 see Figure 5 40 US dVour dt on Turn on voltage slope Ry 6 52 See Figure 23 V us dVour dt or Turn off voltage slope Ry 6 52 See Figure25 Vius Switching energy _ B l Won losses during ton H lt 6 50 see Figure 5 0 20 mJ Switching energy B Worr losses during tor R 6 50 see Figure 5 0 3 mJ Doc ID 16611 Rev 1 9 35 Electrical specifications VN5E050MJ E 10 35 Table 7 Logic inputs
4. 5b Oo OI OI 00 1 The above test levels must be considered referred to Voc 13 5 V except for pulse 5b 2 Valid in case of external load dump clamp 40 V maximum referred to ground Table 13 Electrical transient requirements part 3 Class Contents C All functions of the device are performed as designed after exposure to disturbance E One or more functions of the device are not performed as designed after exposure to disturbance and cannot be returned to proper operation without replacing the device K Doc ID 16611 Rev 1 17 35 Electrical specifications VN5E050MJ E 24 18 35 Waveforms Figure 10 Normal operation Normal operation INPUT Nominal load Nominal load lour VSENSE Figure 11 Overload or Short to GND Overload or Short to GND INPUT 1 Power Limitation i i lour VSENSE Vcs pis Doc ID 16611 Rev 1 ky Electrical specifications Intermittent Overload Intermittent Overload Figure 12 i Et S feel eee A oe We zt nic CUM aer xcu cM E RES N O a E b c c zZ ct 6 D Oo Q E 2 A Sc s b o 20 8 E E 3 t Ou 5 20 o o m 5 io y g P obs L amp pu o o 5 Uo gt E S O 9 Y zl TUE 9 NN spes o a gt Ld E e Sc NN o m D i E A A l
5. 28 Thermal fitting model of a single channel HSD in PowerSSO 12 28 PowerSSO 12 package dimensions nennen eee 30 PowerSSO 12 tube shipment no suffix eee eeen 32 PowerSSO 12 tape and reel shipment suffix TR eeen 32 Doc ID 16611 Rev 1 ky VN5E050MJ E Block diagram and pin description Y Block diagram and pin description Figure 1 Block diagram Vee Signal Clamp LA S e 0 gt a Undervoltage Control amp Diagnostic Power Clamp F e IN DRIVER e Von Limitation Over Current lt temp Limitation ka CS DIS VSENSEH cs O Current D Sense S OUT lt OVERLOAD PROTECTION LOGIC ACTIVE POWER LIMITATION i GND Table 1 Pin function Name Function Voc Battery connection OUT Power output Ground connection Must be reverse battery protected by an external GND diode resistor network IN Voltage controlled input pin with hysteresis CMOS compatible Controls output Switch state CS Analog current sense pin delivers a current proportional to the load current CS DIS Active high CMOS compatible pin to disable the current sense pin Doc ID 16611 Rev 1 5 35 Block diagram and pin description VN5E050MJ E 6 35
6. GI VN5E050MJ E Single channel high side driver with analog current sense for automotive applications Features Max supply voltage Vee 41V Operating voltage range Vee 4 5Vto 28V Max on state resistance Ron 50 mQ Current limitation typ LIMH 27A Off state supply current Ig 2 pA 1 Typical value with all loads connected m General Inrush current active management by power limitation Very low standby current 3 0 V CMOS compatible inputs Optimized electromagnetic emissions Very low electromagnetic susceptibility In compliance with the 2002 95 EC european directive Very low current sense leakage m Diagnostic functions Proportional load current sense High current sense precision for wide currents range Current sense disable Overload and short to ground power limitation indication Thermal shutdown indication m Protections November 2009 Undervoltage shutdown Overvoltage clamp Load current limitation Self limiting of fast thermal transients Protection against loss of ground and loss of Voc Overtemperature shutdown with auto restart thermal shutdown Reverse battery protected see Figure 29 PowerSSO 12 Electrostatic discharge protection Application m All types of resistive inductive and capacitive loads m Suitable as LED driver Description The VN5E050MUJ E is a single channel high side driver manufactured in the ST
7. Symbol Parameter Test conditions Min Typ Max Unit Vi Input low level voltage 0 9 V lL Low level input current Vin 0 9V 1 pA VH Input high level voltage 2 1 V liu High level input current Vin 2 1V 10 UA Vignyst Input hysteresis voltage 0 25 V lin 1 mA 5 5 7 V V Input cl It ICL nput clamp voltage Ipy TmA 07 V Vesp CS DIS low level voltage 0 9 V lcsn Low level CS DIS current Vcsp 0 9V 1 UA Vespa CS DIS high level voltage 2 1 V lcspu High level CS DIS current Vcsp 2 1V 10 UA Vesp nyst CS DIS hysteresis voltage 0 25 V lcsp 1 mA 5 5 7 V V DIS cl It csch CS DIS clamp voltage lcsp 1mA 07 V Table8 Protections and diagnostics 1 Symbol Parameter Test conditions Min Typ Max Unit Vcc 13V 19 27 38 A lima DC short circuit current Sue Vec lt 28V 38 A Short circuit current lim during thermal cycling Meen 13V TR lt T lt Tt8D A Trsp Shutdown temperature 150 175 200 C TR Reset temperature Trast 1 Trag 5 C Trs Thermal reset of status 135 C Thermal hysteresis Tuvsr 7 C ST Trep Tg Vie Vie output voltage T Vy 0 TH Vcc 41 Vcc 46 L lour 0 1A Output voltage dro WA E Tj 40 G to 150 C 25 mV limitation see Figure 6 1 To ensure long term reliability under heavy overload or short circuit conditions protection and related diagnostic signals must be used together with a proper software strategy If the device is subjected to abnormal conditions this software mus
8. User Direction of Feed User direction of feed 32 35 Doc ID 16611 Rev 1 yy VN5E050MJ E Order codes 6 Order codes Table 16 Device summary Package PowerSSO 12 Order codes Tube VN5E050MJ E Tape and reel VN5E050MJTR E Doc ID 16611 Rev 1 33 35 Revision history VN5E050MJ E 7 34 35 Revision history Table 17 Document revision history Date 03 Nov 2009 Revision 1 Initial release Changes Doc ID 16611 Rev 1 VN5E050MJ E Please Read Carefully Information in this document is provided solely in connection with ST products STMicroelectronics NV and its subsidiaries ST reserve the right to make changes corrections modifications or improvements to this document and the products and services described herein at any time without notice All ST products are sold pursuant to ST s terms and conditions of sale Purchasers are solely responsible for the choice selection and use of the ST products and services described herein and ST assumes no liability whatsoever relating to the choice selection or use of the ST products and services described herein No license express or implied by estoppel or otherwise to any intellectual property rights is granted under this document If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such thi
9. if the load dump peak voltage exceeds the Vcc max DC rating The same applies if the device is subject to transients on the Vcc line that are greater than the ones shown in the ISO 7637 2 2004 E table 3 3 MCU I O protection If a ground protection network is used and negative transients are present on the Voo line the control pins is pulled negative ST suggests to insert a resistor Rprot in line to prevent the MCU 1 O pins from latching up The value of these resistors is a compromise between the leakage current of MCU and the current required by the HSD l Os Input levels compatibility with the latch up limit of MCU l Os VoCpeak llatchup ES RprotS VoHuc ViH Vanp liHmax Calculation example For Vccpeak 100V and liatchup 2 20mA Vouuc 2 4 5V 5KQ Rprot S 180kQ Recommended values Rprot 10kQ Cexr 1OnF 24 35 Doc ID 16611 Rev 1 ky VN5E050MJ E Application information 3 4 Current sense and diagnostic The current sense pin performs a double function see Figure 30 Current sense and diagnostic e Current mirror of the load current in normal operation delivering a current proportional to the load one according to a know ratio Kx The current Isense can be easily converted to a voltage Vsenge by means of an external resistor Rsense Linearity between lour and Vsense is ensured up to 5V minimum see parameter Vsense in Table 9 Current sense 8V VCC 18V The current sense accuracy depends on the output
10. 35 Electrical specifications VN5E050MJ E 16 35 Table 10 Truth table Conditions Input Output Sense Vcsp ov Normal operation E E 2 H H Nominal Overtemperature R g H L VSENSEH L L 0 It Undervoltage H L 0 H X Nominal no power limitation Overload oR H Cycling VsENSEH power limitation Short circuit to GND L L 0 power limitation H L VSENSEH Negative output voltage L L 0 clamp 1 If the Vesp is high the SENSE output is at a high impedance its potential depends on leakage currents and external circuit Doc ID 16611 Rev 1 x VN5E050MJ E Electrical specifications Table 11 Electrical transient requirements part 1 5 1 Burst cycle pulse ISO 7637 2 Test levels Number of repetition time Delays and 2004 E pulses or Test pul test times Impedance ai dic II IV Min Max 1 75V 100V 5000 pulses 0 5s 5s 2 ms 100 2a 37V 50V 5000 pulses 0 25 5s 50us 22 3a 100V 150V 1h 90ms 100ms 0 1us 502 3b 75V 100V 1h 90ms 100ms 0 1us 502 4 6V 7V 1 pulse 100ms 0 012 5b 65V 87V 1 pulse 400ms 20 1 The above test levels must be considered referred to Voc 13 5 V except for pulse 5b 2 Valid in case of external load dump clamp 40 V maximum referred to ground Table 12 Electrical transient requirements part 2 ISO 7637 2 2004 E Test pulse 1 Test level results 1 2a
11. Figure 4 Current sense delay characteristics INPUT AA AAA a4 cs pis en een od ON LOAD CURRENT E EU EE n I A E L3 4 SENSE CURRENT lt q DSENSE2H tDSENSE1L tDSENSE1H DSENSE2L Figure 5 Switching characteristics Vour twon twoff dvouT dt on t INPUT td on la off de gt t Figure 6 Output voltage drop limitation oou Tj 1500C Tj 250C Von p gt lout Von Ron T Doc ID 16611 Rev 1 13 35 Electrical specifications VN5E050MJ E Figure 7 Delay response time between rising edge of output current and rising edge of current sense CS enabled Vin AfDSENSE2H k gt louTMAX 90 lour ISENSEMAX 90 ISENSEMAX 14 35 Doc ID 16611 Rev 1 ky VN5E050MJ E Electrical specifications Figure 8 lour isense vs lout lout l Isense 3000 2800 max Tj 40 C to 150 C 2600 amp 2400 2200 nn w n ma m vn n ee 2000 typical value min Tj 25 C to 150 C min Tj 40 C to 150 C lour A Figure 9 Maximum current sense ratio drift vs load current dk k E CEE dG eeo cecer l l TI III N 20 T T 1 1 4 lour A Note Parameter guaranteed by design it is not tested K Doc ID 16611 Rev 1 15
12. H R4 ES R5 RO MA MA MY My AA MBA d P a The fitting model is a simplified thermal tool and is valid for transient evolutions where the embedded protections power limitation or thermal cycling during thermal shutdown are not triggered Doc ID 16611 Rev 1 ky VN5E050MJ E Package and PCB thermal data Table 14 Thermal parameter Arealisland cm Footprint 2 8 R1 C W 0 7 R2 C W 2 8 R3 C W 3 R4 C W 8 8 7 R5 C W 22 15 10 R6 C W 26 20 15 C1 W s C 0 001 C2 W s C 0 0025 C3 W s C 0 0166 C4 W s C 0 2 0 1 0 1 C5 W s C 0 27 0 8 1 C6 W s C 3 6 9 Doc ID 16611 Rev 1 29 35 Package information VN5E050MJ E 5 5 1 5 2 30 85 Package information ECOPACK In order to meet environmental requirements ST offers these devices in different grades of ECOPACK packages depending on their level of environmental compliance ECOPACK specifications grade definitions and product status are available at www st com ECOPACK is an ST trademark Package mechanical data Figure 36 PowerSSO 12 package dimensions Doc ID 16611 Rev 1 ky VN5E050MJ E Package information 3 Table 15 PowerSSO 12 mechanical data Millimeters Symbol Min Typ Max A 1 250 1 620 A1 0 000 0 100 A2 1 100 1 650 B 0 230 0 410 C 0 1
13. current refer to current sense electrical characteristics Table 9 Current sense BV VCC 18V e Diagnostic flag in fault conditions delivering a fixed voltage Vsensen up to a maximum current Isensen in case of the following fault conditions refer to Truth table Power limitation activation Overtemperature A logic level high on CS DIS pin sets at the same time all the current sense pins of the device in a high impedance state thus disabling the current monitoring and diagnostic detection This feature allows multiplexing of the microcontroller analog inputs by sharing of sense resistance and ADC line among different devices Figure 30 Current sense and diagnostic VBAT e Vee o o Main MOSn MY e lout Kx m ll ja lt ISENSEH Pwr Li l gt OUTn Mn e o CS DIS VSENSEH A CURRENT SENSEn GND Load Rprot 4 kd To uC ADC Y Rsense VsENSE NN Doc ID 16611 Rev 1 25 35 Application information VN5E050MJ E 3 5 26 35 Maximum demagnetization energy Vcc 13 5V Figure 31 Maximum turn off current versus inductance 100 eee A C 10 x 1 E 4 L mH 10 100 A Tjstart 150 C single pulse B Tjstart 100 C repetitive pulse C Tjstart 125 C repetitive pulse Vine IL A Demagnetization Demagnetization Demagnetization P i K
14. proprietary ViPower MO 5 technology and housed in the tiny PowerSSO 12 package The VN5EO50MJ E is designed to drive 12 V automotive grounded loads delivering protection diagnostics and easy 3 V and 5 V CMOS compatible interface with any microcontroller The device integrates advanced protective functions such as load current limitation inrush and overload active management by power limitation overtemperature shut off with auto restart and overvoltage active clamp A dedicated analog current sense pin is associated with every output channel in order to provide Enhanced diagnostic functions including fast detection of overload and short circuit to ground through power limitation and overtemperature indication The current sensing and diagnostic feedback of the whole device can be disabled by pulling the CS DIS pin high to allow sharing of the external sense resistor with other similar devices Doc ID 16611 Rev 1 1 35 www st com Contents VN5E050MJ E Contents 1 Block diagram and pin description ess s s e e e e na 5 2 Electrical specifications s x e e e e a 7 2 1 Absolute maximum ratings eneen 7 2 2 Thermal data sees 8 2 3 Electrical characteristics llle 9 2 4 Waveftorms uias RR d SC aan aa ma kar SCR A ROCA i AG eS 18 2 5 Electrical characteristics curves laka akka 20 3 Application information ssssssssnannnannannnn a 23 3 1 GND protection network against reverse batt
15. rising edge of output current and rising edge of current sense CS enabled eee 14 lout IsENSE vs lout EEE cas NRT tn gap TE ieee capes TE defe tp wap R giae doti cance RE 15 Maximum current sense ratio drift vs load current 15 Normal operation neee 18 Overload or Short to GND eee 18 Intermittent Overload rrr 19 T evolution in Overload or Short to GND eee 19 Off state output current onee 20 High level input current neee 20 Input clamp level cick ree oe vann ee dE are Rad gk cs er ee kur 20 Input low level 2 esse a eee det eked a Hed a a ae an RU RO a 20 Input high level as usa we a ate asks ska Shwe k eod a a de a k 20 Input hysteresis voltage ene 20 On state resistance vs Tcase venen enen eneen 21 On state resistance vs VCC neee eee 21 Undervoltage shutdown eee 21 Turn on voltage slope 1 1 2134 saka eee 21 IBLl BID 21 Turn off voltage Slope x eh 21 CS DIS high level voltage sanak saak aaa sasa aaa aa aaa 22 CS DIS clamp voltage sasa kakak 22 CS DIS low level voltage sasa aaa akka aa aka aaa 22 Application schematic s s ee K x e R e K R R R RRR RII eh 23 Current sense and diagnostic eee 25 Maximum turn off current versus inductance kakak aa aaa 26 PowerSSO 12 PC board onee eee eee 27 Rthj amb Vs PCB copper area in open box free air condition 27 PowerSSO 12 thermal impedance junction ambient single pulse
16. voltage 0 3 V lanp DC reverse ground pin current 200 mA lour DC output current Internally limited A lour Reverse DC output current 20 A lin DC input current 1 to 10 mA lcsp DC current sense disable input current 1to 10 mA lcsense DC reverse CS pin current 200 mA Vosense Current sense maximum voltage pa i V Bus Maximum switching energy single pulse 104 mJ L 3mH R 02 Vp44213 5V Tistart 150 C lout liim Typ Doc ID 16611 Rev 1 7 35 Electrical specifications VN5E050MJ E Table 3 Absolute maximum ratings continued Symbol Parameter Value Unit Electrostatic discharge Human Body Model R 1 5KQ C 100pF INPUT 4000 V Vesp CURRENT SENSE 2000 V CS DIS 4000 V OUTPUT 5000 V Vcc 5000 V Vesp Charge device model CDM AEC Q100 01 1 750 V Ti Junction operating temperature 40 to 150 C Tag Storage temperature 55 to 150 C 2 2 Thermal data Table 4 Thermal data Symbol Parameter Max value Unit Rinj case Thermal resistance junction case with one channel ON 2 7 C W Rinj amb Thermal resistance junction ambient See Figure 33 C W x 8 35 Doc ID 16611 Rev 1 VN5E050MJ E Electrical specifications 2 3 d Electrical characteristics Values specified in this section are for 8V Vcc 28V 40 C lt T lt 150 C unless otherwise
17. 16611 Rev 1 VN5E050MJ E Electrical specifications Figure 20 On state resistance vs Tease Figure 21 On state resistance vs Vcc Ron mOhm 300 250 lout 2A Vec 13V 200 150 100 50 50 25 0 25 50 75 100 125 150 175 Tc C Ron mOhm 100 80 Tc 150 C Tc 125 C 60 40 Tc 25 C Tc 40 C 20 0 0 5 10 15 20 25 30 35 40 Vcc V Figure 22 Undervoltage shutdown Figure 23 Turn on voltage slope Vusd V 50 25 0 25 50 75 100 125 150 175 Tc C dVout dt On V ms 1000 900 Vee 13V soe RI 6 5 Ohm 700 600 500 400 50 25 0 2 50 75 100 125 150 175 Tc C Figure 24 ig VS Tease Figure 25 Turn off voltage slope llimh A dVout dt Off V ms 40 600 550 35 Vec 13V 0 Veel TT iso Rl 6 5 Ohm 30 400 350 25 300 250 20 200 150 15 100 50 10 0 50 25 0 25 50 75 100 125 150 175 50 25 0 25 50 75 100 125 150 175 Tc C Tc C ky Doc ID 16611 Rev 1 21 35 Electrical specifications VN5E050MJ E Figure 26 CS DIS high level voltage Figure 27 CS DIS clamp voltage
18. 90 0 250 D 4 800 5 000 E 3 800 4 000 e 0 800 H 5 800 6 200 h 0 250 0 500 L 0 400 1 270 k 0 8 X 2 200 2 800 Y 2 900 3 500 ddd 0 100 Doc ID 16611 Rev 1 31 35 Package information VN5E050MJ E 5 3 Packing information Figure 37 PowerSSO 12 tube shipment no suffix e Base Q ty 100 Bulk Q ty 2000 Tube length x 0 5 532 i A 1 85 B 6 75 C x 0 1 0 6 All dimensions are in mm Figure 38 PowerSSO 12 tape and reel shipment suffix TR T t REEL DIMENSIONS Pelli Base Qty 2500 at slot location Bulk Q ty 2500 S A max 330 B min 1 5 C x 0 2 13 c F 20 2 G 2 0 12 4 CERE DUE FLA N N min 60 PON T max 18 4 G measured Tape slot SHE in core for tape start 2 5mm min width r TAPE DIMENSIONS According to Electronic Industries Association m EIA Standard 481 rev A Feb 1986 Tape width W 12 Tape Hole Spacing PO 0 1 4 Component Spacing P 8 Hole Diameter D 0 05 1 5 Hole Diameter D1 min 1 5 Hole Position F x 0 1 5 5 Compartment Depth K max 4 5 Hole Spacing P1 x 0 1 2 All dimensions are in mm Top No components Components No components cover L le le 4 tape 500mm min e Empty components pockets 500mm min 7 a saled with cover tape
19. e oer ORE Shed duxi a pA E Eun Yee pee el Ber uds 9 Switching Vec 13V Toe 259C 221222 anak esit da x Ro dur abt 9 Esse T 10 Protections and diagnostics se e re 10 Current sense aV VCC 18V eas 11 Mic 16 Electrical transient requirements part 1 llli 17 Electrical transient requirements part 2 liliis 17 Electrical transient requirements part 3 lille elles 17 Thermal parameter e e e R e e K e e R RRR m mre 29 PowerSSO 12 mechanical data res 31 Device summary x R a rakia R R X R a RR R RRR hh rr 33 Document revision history 1 eee 34 Doc ID 16611 Rev 1 3 35 List of figures VN5E050MJ E List of figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Figure 11 Figure 12 Figure 13 Figure 14 Figure 15 Figure 16 Figure 17 Figure 18 Figure 19 Figure 20 Figure 21 Figure 22 Figure 23 Figure 24 Figure 25 Figure 26 Figure 27 Figure 28 Figure 29 Figure 30 Figure 31 Figure 32 Figure 33 Figure 34 Figure 35 Figure 36 Figure 37 Figure 38 4 35 Block diagram 20 5 ocios edle yee Fx ree Radon ade Ya E RE arr Adag 5 Configuration diagram top view IIR n 6 Current and voltage conventions rn 7 Current sense delay characteristics aen 13 Switching characteristics aen ett 13 Output voltage drop limitation eenen eee 13 Delay response time between
20. er dissipation in Ranp when Voc lt 0 during reverse battery situations is Pp Vcc Renp This resistor can be shared amongst several different HSDs Please note that the value of this resistor should be calculated with formula 1 where Is onymax becomes the sum of the maximum on state currents of the different devices Please note that if the microprocessor ground is not shared by the device ground then the Reno Produces a shift Is on max Reno in the input thresholds and the status output Doc ID 16611 Rev 1 23 35 Application information VN5E050MJ E values This shift varies depending on how many devices are ON in the case of several high side drivers sharing the same Ranp If the calculated power dissipation requires the use of a large resistor or several devices have to share the same resistor then ST suggests using solution 2 below 3 1 2 Solution 2 diode Dgnp in the ground line Note that a resistor Ranp 1k should be inserted in parallel to Denp if the device drives an inductive load This small signal diode can be safely shared amongst several different HSDs Also in this case the presence of the ground network produces a shift jo00mV in the input threshold and in the status output values if the microprocessor ground is not common to the device ground This shift not varies if more than one HSD shares the same diode resistor network 3 2 Load dump protection Dig is necessary Voltage Transient Suppressor
21. ery 23 3 1 1 Solution 1 resistor in the ground line RGND only 23 3 1 2 Solution 2 diode Danp in the ground line 24 3 2 Load dump protection xke Ra REOR RE RE ER YO dk dake 24 3 3 MCU VO protection 2222assr sarana akak aa bae dE 24 3 4 Current sense and diagnostic sansar arna 25 3 5 Maximum demagnetization energy VCC 13 5V 26 4 Package and PCB thermal data s 27 4 1 PowerSSO 12 thermal data 22ss22s sansa aaa 27 5 Package information xs x x 6665s cesar 30 5d ECOPACKO 22 xentoktchud Erebe tavit toto UR dr eatis 30 5 2 Package mechanical data illis 30 5 8 Packing information rr reerde Reb RR WEE aaa kakak 32 6 Order codes ccce eus aR RR uc uas R NR R RR N R NR NH s 33 7 Revision history sss ss s s ee c e pui RRR RRR VETE RE RE 34 2 35 Doc ID 16611 Rev 1 ki VN5E050MJ E List of tables List of tables Table 1 Table 2 Table 3 Table 4 Table 5 Table 6 Table 7 Table 8 Table 9 Table 10 Table 11 Table 12 Table 13 Table 14 Table 15 Table 16 Table 17 Pin fUnctioni eee euren pae avn XH ebd ados ease e enia eka 5 Suggested connections for unused and not connected pins nn 6 Absolute maximum ratings 0 0 0 ce nn 7 Thermal data ese eender RR ala nx M ceram x RU Rau aid s RR o a RR REOR N 8 Power Section 2443 oom eeen er b
22. p Se EE E RO id ce O ses 5 3 O 7 E gt E E 5 u 2 FE 2 2 3 2 A E e 2 a D z z gt gt vd 2 3 9 iL 19 35 Doc ID 16611 Rev 1 VN5E050MJ E Electrical specifications VN5E050MJ E 2 5 Figure 14 Off state output current Electrical characteristics curves Figure 15 High level input current Tc C Tc C lloff nA lih HA 700 5 4 5 600 t Vin 2 1V Off State 4 Vec 13V 500 Vin Vout 0V 3 5 3 400 2 5 300 2 200 1 5 F 100 0 5 0 0 50 25 0 25 50 75 100 125 150 175 50 25 0 25 50 75 100 125 150 175 Te C Te C Figure 16 Input clamp level Figure 17 Input low level Vicl V Vil V 7 2 6 8 18 lin 1mA 6 6 1 6 6 4 1 4 6 2 1 2 6 1 5 8 0 8 5 6 0 6 5 4 0 4 5 2 0 2 5 0 50 25 0 25 50 75 100 125 150 175 50 25 0 25 50 75 100 125 150 175 Tc C Te C Figure 18 Input high level Figure 19 Input hysteresis voltage Vih V Vihyst V 4 1 3 5 0 9 0 8 3 0 7 2 5 0 6 2 0 5 1 5 0 4 0 3 p 0 2 0 5 0 1 0 0 50 25 0 25 50 75 100 125 150 175 50 25 0 25 50 75 100 125 150 175 20 35 Doc ID
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24. rious countries Information in this document supersedes and replaces all information previously supplied The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners 2009 STMicroelectronics All rights reserved STMicroelectronics group of companies Australia Belgium Brazil Canada China Czech Republic Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Philippines Singapore Spain Sweden Switzerland United Kingdom United States of America www st com ky Doc ID 16611 Rev 1 35 35
25. t U In case of repetitive pulses T start at beginning of each demagnetization of every pulse must not exceed the temperature specified above for curves A and B Doc ID 16611 Rev 1 ky VN5E050MJ E Package and PCB thermal data 4 Package and PCB thermal data 4 1 PowerSSO 12 thermal data Figure 32 PowerSSO 12 PC board PSS012L PSSOL2L PSS012L 8cm 2 Note Layout condition of Ri and Zij measurements PCB Double layer Thermal Vias FR4 area 77 mm x 86 mm PCB thickness 1 6 mm Cu thickness 70 um front and back side Copper areas from minimum pad lay out to 8 cm Figure 33 Rini amp Vs PCB copper area in open box free air condition RTHj_amb C W 65 60 55 50 4 45 40 35 0 4 PCB Cu heatsink area cm 2 10 Doc ID 16611 Rev 1 27 35 Package and PCB thermal data VN5E050MJ E 28 35 Figure 34 PowerSSO 12 thermal impedance junction ambient single pulse ZTH C W 100 Footprint 2 cm S 8 cm 10 1 0 1 0 001 0 01 0 1 1 10 100 1000 Time s Equation 1 pulse calculation formula Z Bru Z THS THtp 9 where tp T Figure 35 Thermal fitting model of a single channel HSD in PowerSSO 12 a Tj C1 c2 C3 c4 C5 CB Jk i i i R1 H R2 R3
26. t limit the duration and number of activation cycles Doc ID 16611 Rev 1 3 VN5E050MJ E Electrical specifications Table 9 Current sense 8V Vcc 18V Symbol Parameter Test conditions Min Typ Max Unit K lour 0 05A Vsense 0 5V Vosp 0V QUT SENSE Te 40 C to 150 C 1170 2000 3090 lout 1A Vsense 4 V Vosp 0V K lour lsense Te 40 C to 150 C 1575 2000 2750 Tj 25 C to 150 C 1575 2000 2465 1 Current sense lout 1A Vsense 4 V Vcgp 0V 5 duh ratio drift Ty 40 C to 150 C 10 10 lout 2A Vsense 4V Vosp 0V Ko lout IsENSE T 40 C to 150 C 1765 2000 2315 Tj 25 C to 150 C 1765 2000 2155 1 Current sense lout 2A Vsense 4V Vosp 0V Kala ratio drift Ty 40 C to 150 C f N lout 4A Vsense 4V Vesp 0V Kg lour lsENsE Tj 40 C to 150 C 1840 2000 2135 T 25 C to 150 C 1840 2000 2080 1 _ Current sense lout 4A Vsense 4 V Vosp 0V 5 diss ratio drift Ty 40 C to 150 C 2 4 lour 0A Vsense 0V Vcsp 5V Vin 0V Tj 40 C to 150 C 0 1 UA Analog sense Vcsp 0V Vin 5V Tj 40 C to 150 C 0 2 UA SENSEO leakage current lour 2A Vsense 0V Vesp 5V Vin 5V Tj 40 C to 150 C 0 1 UA Open load on Vin BV 8V lt V 18V la state current IN 5V 8V lt Voc lt 18 4 sa mA detection IsENSE 5 UA threshold Max analog sense DAT E VSENSE output voltage lout 4A Vesp OV 5 V Analog sense Vsensen Ou
27. tput voltage in Voc 13V Rgense 3 9 KQ 8 V fault condition Analog sense ISENSEH output current in Voc 13V Veense 5V 9 mA fault condition a ha es Vsense lt 4V 0 5A lt lout lt 4A Ime trom tallin IDSENSETH edge of br Isense 90 of ISENSE max 50 100 ps pin see Figure 4 Delay response Vsense lt 4V O 5A lout 4A i time from rising I 10 of 5 20 US DSENSEIL edge of CS DIS SENSE PEE pin see Figure 4 Y Doc ID 16611 Rev 1 11 35 Electrical specifications VN5E050MJ E 12 35 Table 9 Current sense 8V lt V lt 18V continued Symbol Parameter Test conditions Min Typ Max Unit Delay response VSENSE 4V 0 5A lt lout lt 4A tosensezn time from rising Isense 90 of ISENSE max 80 250 us edge of INPUT pin see Figure 4 Delay response time between Vsense lt 4V rising edge of Isense 90 of SENSEMAX 4 AtpsENSE2H t n5 O ps output current and lour 90 of loytmax rising edge of loUTMAX 2A see Figure 7 current sense Delay response VSENSE 4V 0 5A lt lout lt 4A DSENSE2L time from falling ISENSE 10 of ISENSE max 100 250 US edge of INPUT pin see Figure 4 1 Parameter guaranteed by design it is not tested 2 Fault condition includes power limitation and overtemperature Doc ID 16611 Rev 1 x VN5E050MJ E Electrical specifications d

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