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ST 74V1GU04 handbook(1)

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1. 0 0 74V1GU049 O O 47 74V1GU04 SINGLE INVERTER SINGLE STAGE HIGH SPEED tro 3 5 ns TYP at Vcc 5V LOW POWER DISSIPATION lcc 1 uA MAX at Ta 25 C HIGH NOISE IMMUNITY VNIH VniL 10 Vcc MIN a POWER DOWN PROTECTION ON INPUT a SYMMETRICAL OUTPUT IMPEDANCE loH lo 8 mA MIN s BALANCED PROPAGATION DELAYS tPLH tPHL OPERATING VOLTAGE RANGE Vcc OPR 2V to 5 5V a IMPROVED LATCH UP IMMUNITY DESCRIPTION The 74V1GU04 is an advanced high speed CMOS SINGLE INVERTER fabricated with sub micron silicon gate and double layer metal wiring C MOS technology PIN CONNECTION AND IEC LOGIC SYMBOLS NC 1A GND 5212260 October 1999 Cc SOT23 5L ORDER CODE 74V1GU04S 74V1GU04C SC 70 As the internal circuit is composed of a single stage inverter it can be used in analog application such a crystal oscillator Power down protection is provided on input and 0 to 7V can be accepted on input with no regard to the supply voltage This device can be used to interface 5V to 3V tS ay LC13630 1 7 74V1GU04 INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION Voc ESD Veco Positive Supply Voltage PROTEC SC113940 ABSOLUTE MAXIMUM RATINGS V Absolute Maximum Ratings are those values beyond which damage to the device may occur Functional operation under these condition is not implied RECOMMENDED OPERATING CONDITIONS Symbol ___ Parameter Vawe Uni
2. V1GU04 SOT23 5L MECHANICAL DATA 74V1GU04 SC 70 MECHANICAL DATA 6 7 74V1GU04 Information furnished is believed to be accurate and reliable However STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics Specification mentioned in this publication are subject to change without notice This publication supersedes and replaces all information previously supplied STMicroelectronics products are not authorized for use as critical components in life support devices or systems withoutexpress written approval of STMicroelectronics The ST logo is a registered trademark of STMicroelectronics 1999 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia Brazil China Finland France Germany Hong Kong India Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom U S A http www st com 7 7 WWW ALLDATASHEET COM Copyright O Each Manufacturing Company All Datasheets cannot be modified without permission This datasheet has been download from www AllDataSheet com 100 Free DataSheet Search Site Free Download No Register Fast Se
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4. t Supply Voltage 2 0 10 5 5 Input Voltage 0 to 5 5 Vo output Voltage Operating Temperature 40 to 85 2 7 74V1GU04 DC SPECIFICATIONS Parameter Test Conditions Value Hi T T High Level Input 2 0 Voltage 3 0 to 5 5 V IH Vi Low Level Input 20 Voltage 3 0 to 5 5 High Level Output lo 50 uA yan ge 30 l s5opa 2 45 to S04A_ 4 30 loama 25 45 l 8ma f3 Low Level Output 20 lo S04A we ao lo50pa 45 lopa 30 lo 4ma 45 to 8ma Input Leakage Current loc Quiescent Supply 5 Vi Vcc or GND Current 2 4 V 0 2 0 2 0 3 0 4 5 3 0 4 5 2 0 3 0 5 3 0 4 5 5 Propagation Delay Time Voltage range is 3 3V 0 3V Voltage range is 5V 0 5V CAPACITIVE CHARACTERISTICS Parameter Test Conditions BE Al 7 A i 7 E r Input Capacitance Cpp Power Dissipation Capacitance note 1 1 Cro isdefined as the value of the IC sinternal equivalent capacitance which is calculated fromthe operating current consumption without load Referto Test Circuit Average operating current can be obtained by the following equation Icc opr Cro Voc e fin loc 3 7 74V1GU04 TEST CIRCUIT PULSE GENERATOR 5012220 C 15 50 pF or equivalent includes jig and probe capacitance Rr Zour of pulse generator typically 50Q WAVEFORM PROPAGATION DELAYS f 1MHz 50 duty cycle 35012620 4 7 74

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