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LINFINITY SG6100/SG6511/SG6101/SG6510 handbook

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1. CONNECTION DIAGRAMS amp ORDERING INFORMATION continued Pack Part N Ambient i ackage art No Temperature Range Connection Diagram 14 PIN CERAMIC DIP G6511J 55 C to 150 C J PACKAGE 1N6511 l n n 2 OG 13 3 i4 12 4 ie 11 5 ke 10 6 0a 9 7 K 8 16 PIN CERAMIC DIP SG6101J 55 C to 150 C 4 J PACKAGE 1N6101 6 2 5 30 4 4 3 5 2 6 1 7 0 8 9 14 PIN CERAMIC FLATPACK SG6100F 55 C to 150 C 1 14 F PACKAGE 1N6100 3 i3 3 ri it 12 4 K 11 5 f K 10 6 K 9 ES 16 PIN CERAMIC FLATPACK SG6510F 55 C to 150 C 14 F PACKAGE 1N6510 ae 2 _ __ q _ 15 3 S o 14 4 K 13 5 n gt a 12 6 N 11 7 qf 10 8 M e 9 Note 1 Consult factory for other packages available 2 All packages are viewed from the top 3 Consult factory for JAN JANTX JANTXV product availability 6 91 Rev 1 1 2 94 LINFINITY Microelectronics Inc Copyright 1994 11861 Western Avenue Garden Grove CA 92841 3 714 898 8121 FAX 714 893 2570
2. gt LINFINITY MICROELECTRONICS SG6100 SG6511 SG6101 SG6510 DIODE ARRAY CIRCUITS DESCRIPTION 8 straight through diodes diode electrical parameters are very closely matched The SG6100 SG6511 and SG6101 SG6510 diode arrays are monolithic high breakdown fast switching speed diode arrays The SG6100 SG6511 is configured with 7 straight through diodes while the SG6101 SG6510 has These two diode array configurations allow the designer maximum flexibility for circuit design and board layout Since each diode within the array has individual anode and cathode connections the device may be used in a variety of applications Also due to the array s monolithic construction the Both devices are available in ceramic DIP and flatpack and can be processed to Linfinity s S level JANTXV JANTX or JAN equivalent flows FEATURES 75V minimum breakdown voltage 100mA current capability per diode Switching speeds less than 5ns Low leakage current lt 25nA HIGH RELIABILITY FEATURES MIL S 19500 474 QPL 1N6100 1N6101 1N6510 1N6511 Equivalent JANS JANTXV JANTX JAN screening available CIRCUIT DIAGRAMS A Az O O 7 STRAIGHT TH Q A O SG6100 SG6511 A O 8 STRAIGHT THROUGH DIODES ROUGH DIODES A O G6101 SG6510 6 91 Rev1 1 2 94 LINFINITY Microelectronics Inc Copyright 1994 11861 Western Avenue Garden Grove CA 92841 1 714 898 8121 FAX 714 893 25
3. 50 C SOGI T ia 55 C to 150 C SOGI ariari cdeeseeesant deanna 55 C to 150 C SG6510 A E E E E 55 C to 150 C Note 3 Range over which the device is functional ELECTRICAL CHARACTERISTICS Unless otherwise specified these specifications apply for the operating ambient temperature of T 25 C for each diode Low duty cycle pulse testing techniques are used which maintains junction and case temperatures equal to the ambient temperature SG6100 SG6511 Parameter Test Conditions G6010 SG6510 Units Min Typ Max Breakdown Voltage Vpr 54A Duty Cycle lt 20 75 V Forward Voltage V Duty Cycle lt 2 300 us pulse l 100mA 1 0 V I 10mA T 55 C 1 0 V Reverse Current l5 Vp 20V 25 nA Vp 40V 100 nA V 40V T 150 C 50 uA Capacitance C Note 4 V OV f 1MHZz Pin to pin 4 pf Forward Recovery Time t Note 4 500mA t lt 15ns V 1 8V R 502 15 ns Reverse Recovery Time t Note 4 l 1 200mA i 20mA R 100Q 5 ns Note 4 The parameters although guaranteed are not 100 tested in production 6 91 Rev1 1 2 94 LINFINITY Microelectronics Inc Copyright 1994 11861 Western Avenue Garden Grove CA 92841 2 714 898 8121 FAX 714 893 2570 DIODE ARRAY SERIES
4. 70 DIODE ARRAY SERIES ABSOLUTE MAXIMUM RATINGS Note 1 amp 2 Breakdown Voltage Vos sscscscscetscescssecetsetesstsnecscenesens 75V Operating Junction Temperature Output Current I T 25 C Hermetic J F Packages ecceceeseseeeseeeeteeeeeeeeteees 150 C GOMUNUOUS isiin serment E rasa e natenane atheos cece 300mA Storage Temperature Range cceeeeeeeee 65 C to 200 C Note 1 Exceeding these ratings could cause damage to the device Lead Temperature Soldering 10 seconds 0 300 C Note 2 Applicable for each diode THERMAL DATA J Package 14 amp 16 Pin Thermal Resistance Junction to Case 0 30 C w Note A Junction Temperature Calculation T T Px Thermal Resistance Junction to Ambient O p 06 80 C W Note B The above numbers for 8 are maximums for the limiting F Package 14 Pin thermal resistance of the package in a standard mount Thermal Resistance Junction to Case Og 80 C W Ing configuration The numbers are meant to be Thermal Resistance Junction to Ambient 0 e 140 C W guidelines for the thermal performance of the device pc F Package 16 Pin board system All of the above assume no ambient Thermal Resistance Junction to Case 0 jg 70 C W airflow Thermal Resistance Junction to Ambient 0 115 C W RECOMMENDED OPERATING CONDITIONS Note 3 Operating Ambient Temperature Range BGG 100 sienna ee eee 55 C to 1

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