ST TS271C I M PROGRAMMABLE CMOS SINGLE OPERATIONAL AMPLIFIERS handbook
Contents
1. TS271l AI BI Symbol Parameter IUUD TS271M AM BM Unit Min Typ Max Min Typ Max Vio Input Offset Voltage mV Vo 1 4V OV TS271C I M 1 1 10 1 1 10 TS271AC AI AM 0 9 5 0 9 5 5271 0 25 2 0 25 2 Tmin lt Tamb lt Tmax TS271 12 12 TS271AC AI AM 6 5 6 5 TS271BC BI BM 3 3 5 Input Offset Voltage Drift 2 2 uV C lio Input Offset Current note 1 pA Vic DM Vo DN 1 1 Tmin lt Tamb lt Tmax 100 200 lib Input Bias Current note 1 pA Vic DM Vo DN 1 1 Tmin lt Tamb lt Tmax 150 300 VoH High Level Output Voltage V 100mV 100kQ 8 7 8 9 8 7 8 9 Tmin lt Tamb lt Tmax 8 6 8 5 Low Level Output Voltage Via 100mV 50 50 mV Large Signal Voltage Gain V mV Vo 1V to 6V RL 100kQ Vic 5V 30 50 30 50 Tmin Tamb lt Tmax 20 10 GBP Gain Bandwidth Product A 40dB MHz R 100 C 100pF fin 100kHz 0 7 0 7 CMR Common Mode Rejection Ratio dB Vo 1 4V Vic 1V to 7 4V 60 80 60 80 SVR Supply Voltage Rejection Ratio dB Vec 5V to 10V 1 4V 60 80 60 80 lcc Supply Current uA 1 no load Vo 5V 150 200 150 200 Tmin Tamb lt Tmax 250 300 Output Short Circuit Current mA 100mV Vo OV 60 60 Isink Output Sink Current mA Vig 100mV Vo Voc 45 45 SR Slew Rate at Unity Gain V us 100kQ 100pF Vi 3to 7V 0 6 0 6 Phase Margin at Unity Gain degrees Ay 404 Ri 100kQ 10pF 50 50 100pF2. mA Figure 5a Low Level Output Voltage versus Figure 5b Low Level Output Voltage versus Low Level Output Current Low Level Output Current 79 gt gt 5 gt o lt lt 9 S E E 1 T T Vic 0 5V Vig 100mV 0 4 8 12 16 20 OUTPUT CURRENT mA OUTPUT CURRENT 1 oL mA 6 15 wy SGS THOMSON MICROELECTRONICS 5271 1 TYPICAL CHARACTERISTICS FOR Ier 1 5uA continued Figure6 Open Loop Frequency Response Figure Gain Bandwidth Product versus and Phase Shift Supply voltage 5 T FIL TH TIENS i GAIN BANDW PROD GBP kHz e 0 4 8 12 16 10 102 104 105 10 FREQUENCY f Hz SUPPLY VOLTAGE V Figure8 Phase Margin versus Supply Voltage Figure9 Phase Margin versus Capacitive Load g g a S x E 6 amp 4 5 EE Ge TEE e T EE ESSE 0 4 8 12 16 0 20 40 60 80 100 SUPPLY VOLTAGE Vcc V CAPACITANCE C pF Figure 10 Slew Rates versus Supply Voltage 0 07 T amb 25 0 6 LR 1MO 100pF 0 05 CL 100 0 04 b 0 03 SLEW RATES SR V s 0 02 9 01 4 6 8 10 12 14 16 SUPPLY VOLTAGE Vcg V HA 9 G5 THOMSON BR MICROELECTRONICS TS271C 1 M ELECTRICAL CHARACTERISTICS FOR Iset 25uA Vcc 10V Vec 0 Tamb 25 C unless otherwise specified
3. TS271AC 0 0 SGS THOMSON JA MICROELECTRONICS 15271 1 PROGRAMMABLE CMOS SINGLE OPERATIONAL AMPLIFIERS OFFSET NULL CAPABILITY by external compensation DYNAMIC CHARACTERISTICS ADJUSTABLE BY Iser CONSUMPTION CURRENT AND DYNAMIC E p PARAMETERS ARE STABLE REGARDING THE VOLTAGE POWER SUPPLY VARIATIONS OUTPUT VOLTAGE CAN SWING TO GROUND DIP8 508 VERY LARGE Iser RANGE Plastic Package Plastic Micropackage STABLE AND LOW OFFSET VOLTAGE THREE INPUT OFFSET VOLTAGE SELECTIONS DESCRIPTION ORDER CODES The TS271 is a low cost low power single opera tional amplifier designed to operate with single or Part Number de d Package TS271C AC BC 09 70 TS271l AU BI 40 C 125 C TS271M AM BM 55 C 125 C Example 5271 dual supplies This operational amplifier uses the SGS THOMSON silicon gate CMOS process giv ing it an excellent consumption speed ratio This amplifier is ideally suited for low consumption applications PIN CONNECTIONS top view The power supply is externally programmable with a resistor connectedbetween pins 8 and 4 It allows to choose the best consumption speed ratio and supply current can be minimized according to the required speed This device is specified for the following currentvalues 1 5uA 254A 130A Offset Null 1 Inverting Input Non inverting Input This CMOS amplifier offers very high input imped ance and extremel
4. 130 continued Figure 24 Open Loop Frequency Response and Figure25 Gain Bandwidth Product versus Phase Shift Supply voltage T D e a Ke a 2 ES 100 2 2 3 7 10 10 104 10 10 10 0 4 8 12 16 FREQUENCY f Hz SUPPLY VOLTAGE Vcc V Figure 26 Phase Margin versus Supply Voltage Figure 27 Phase Margin versus Capacitive Load 50 20 PHASE MARGIN m Degrees PHASEMARGIN m Degrees 30 LLL LLLI 0 4 8 12 16 20 40 60 80 100 SUPPLY VOLTAGE Voc V CAPACITANCE pF Figure 28 Slew Rates versus Supply Voltage SLEW RATES SR 4 6 8 10 12 14 16 SUPPLY VOLTAGE V cc V 1 Gr G5 THOMSON ISAS YA TS271C M PACKAGE MECHANICAL DATA 8 PINS PLASTIC DIP Inches Typ 1 Millimeters Dimensions 3 32 1 X 0 131 1415 yg G5 THOMSON MICROELECTRONICS PM DIP8 EPS 271 07 TBL 5271 1 PACKAGE MECHANICAL DATA 8 PINS PLASTIC MICROPACKAGE SO Inches Dimensions Typ Max A 0 069 0 010 a2 hi _ 0465 a3 0 033 b 0 019 b1 0 010 0 020 D 48 LL 50 0489 og 5 8 6 2 0 228 0 244 1 27 0 050 38 40 0157 E e L 0 4 1 27 0 016 0 050 Y ns S 8 max Information furnished is believed to be accurate and reliable However SGS THOMSON Microelectronics assumes no res
5. 10 15 Tmin Tamb lt Tmax 17 18 Output Short Circuit Current mA 100mV Vo OV 60 60 Isink Output Sink Current mA Vig 100mV Vo Voc 45 45 SR Slew Rate at Unity Gain V us 1MQ 100pF Vi to 7V 0 04 0 04 Phase Margin at Unity Gain Degrees Ay 40dB Ri 1MQ 10pF 35 35 100pF 10 10 Kov Overshoot Factor 10pF 40 40 100pF 70 70 Equivalent Input Noise Voltage nV f 1kHz Rs 1000 68 68 Note 1 Maximum values including unavoidable inaccuracies of the industrial test 1 sp 5 55 YA TICROELECTRONIGS TS271C M TYPICAL CHARACTERISTICS FOR 1 5 Figure2 Supply Current versus Supply Figure3 Input Bias Current versus Free Air Voltage Temperature m 9 T E m 5 cc 2 N E lt z a z 2 2 0 4 8 12 16 25 50 75 100 125 SUPPLY VOLTAGE Vcc V TEMPERATURE T amb C Figure 4a High Level Output Voltage versus Figure 4b High Level Output Voltage versus High Level Output Current High Level Output Current zB _ 20 gt o gt 5 re 5 16 Via 100mV B E 4 Vig 100mV 5 16 FVia 2 E EEN lt ga LE devi be a ee ERE BEE SC 5 aa ne giu SS S et Mes 310 8 6 4 2 0 50 40 30 20 10 0 OUTPUT CURRENT mA OUTPUT CURRENT
6. 30 30 Kov Overshoot Factor 10pF 30 30 100pF 50 50 Equivalent Input Noise Voltage nV f 1kHz Rs 1000 38 38 Note 1 Maximum values including unavoidable inaccuracies of the industrial test zd Sr SGS THOMSON JA MICROELECTRONICS 5271 1 TYPICAL CHARACTERISTICS FOR Iset 254A Figure 11 Supply Current versus Supply Figure 12 Input Bias Current versus Free Air Voltage Temperature 2 m T 2 oc 2 N lt a He D 2 0 4 8 12 16 25 50 75 100 125 SUPPLY VOLTAGE Voc TEMPERATURE T amp C Figure 13a High Level Output Voltage versus Figure 13b High Level Output Voltage versus High Level Output Current High Level Output Current _ B _ 20 T amb 25 C 4 Vig 100 C E P g 3 12 ar lt lt e 9 3 a RR EE RT ME SC 5 Se 7 aa Ae S a giu SS pp et Me 310 8 6 4 2 0 50 40 30 20 10 0 OUTPUT CURRENT mA OUTPUT CURRENT ou mA Figure 14a Low Level Output Voltage versus Figure 14b Low Level Output Voltage versus Low Level Output Current Low Level Output Current E d gt gt j 9 lt 9 gt 5 5 D D E E 2 2 0 4 8 12 16 20 OUTPUT CURRENT mA OUTPUT CURRENT 1 oL mA Gyr 55 0 1 1 70 YA MICROELE
7. CTRONICS TS271C M TYPICAL CHARACTERISTICS FOR ker 254A continued Figure 15 OpenLoop Frequency Response Figure 16 Gain Bandwidth Product versus and Phase Shift Supply voltage 50 T og p 25 E 08 Ry 100k2 o T 30 100 4 8 07 Z 20 DW Phase 0 E g Se ST pos 10 o 100kQ lt 2 j L 100pF INS CR EE Aver 100 BendwidtnbMTN NI z 40 Product LK TUN 5 04 10 10 104 105 108 107 0 4 8 12 16 FREQUENCY f Hz SUPPLY VOLTAGE Vcc V Figure 17 Phase Margin versus Supply Voltage Figure 18 Phase Margin versus Capacitive Load 9 5 g 50 4 amb 25 C SITTI E E S Tamb 25 e TT i 100 0 g m C 100 EE S LLLLLLLLLI 0 4 8 12 16 0 20 40 60 80 100 SUPPLY VOLTAGE Vcc V CAPACITANCE pF Figure 19 Slew Rates versus Supply Voltage SLEW RATES SR V Ls C 100pF 4 6 8 10 12 14 16 SUPPLY VOLTAGE Vcc V TASS Tj SGS THOMSON 2 MICROELECTRONICS ELECTRICAL CHARACTERISTICS FOR Iset 1304A Vcc 10V Vec 0 Tamb 25 C unless otherwise specified TS271C l M TS271l AI BI Parameter 15271 TS271M AM BM Unit Min Typ Max Min Typ Max Input Offset Voltage mV Vo 1 4V OV TS271C I M 1 1 10 1 1 10
8. ED FOR GROU Voc Su SET VALUE SEE TS271BCX gt 254A TS271ACX gt 901A Fig Figure 1 Heer Connected to Vcc 0 1 1uA 1 0uA 100uA G5 THOMSON A MICROELECTRONICS 5271 ELECTRICAL CHARACTERISTICS FOR ler 1 5uA Vcc 10V Vec 0 Tamb 25 C unless otherwise specified TS271l AI BI Symbol Parameter e TS271M AM BM Unit Min Typ Max Min Typ Max Vio Input Offset Voltage mV Vo 1 4V Vic OV TS271C I M 1 1 10 1 1 10 TS271AC AI AM 0 9 5 0 9 5 TS271BC BI BM 0 25 2 0 25 2 Tmin lt Tamb lt Tmax TS271 12 12 TS271AC AI AM 6 5 6 5 TS271BC BI BM 3 3 5 Input Offset Voltage Drift 0 7 0 7 uV C lio Input Offset Current note 1 pA Vic DM Vo DN 1 1 Tmin lt Tamb lt Tmax 100 200 lib Input Bias Current note 1 pA Vic DM Vo DN 1 1 Tmin lt Tamb lt Tmax 150 300 VoH High Level Output Voltage V Vig 100mV 1 8 8 9 8 8 9 Tmin lt Tamb lt Tmax 8 7 8 6 Low Level Output Voltage Via 100mV 50 50 mV Avd Large Signal Voltage Gain V mV Vo 1V to 6V RL 1MQ Vic DN 30 100 30 100 Tmin lt Tamb lt Tmax 20 20 GBP Gain Bandwidth Product Ay 400 MHz R 1MQ C 100pF fin 10kHz 0 1 0 1 CMR Common Mode Rejection Ratio dB Vo 1 4V Vic 1V to 7 4V 60 80 60 80 SVR Supply Voltage Rejection Ratio dB Vec 5V to 10V 1 4V 60 80 60 80 lcc Supply Current uA 1 no load Vo 5V 10 15
9. TS271AC AI AM 0 9 5 0 9 5 5271 0 25 2 0 25 2 Tmin lt Tamb lt Tmax TS271 12 12 TS271AC AI AM 6 5 6 5 TS271BC BI BM 3 3 5 Input Offset Voltage Drift 2 2 uV C i Input Offset Current note 1 pA Vic DM Vo DN 1 1 Tmin lt Tamb lt Tmax 100 200 Input Bias Current note 1 pA Vic DM Vo DN 1 1 Trains lt 150 300 High Level Output Voltage V 100mV 10 8 2 8 4 8 2 8 4 Tmin lt Tamb lt Tmax 8 1 8 Low Level Output Voltage Via 100mV 50 50 mV d Large Signal Voltage Gain V mV Vo 1V to 6V RL 10kQ Vic DN 10 15 10 15 Tmin lt Tamb Tmax 7 6 Gain Bandwidth Product A 400 MHz R 10 C 100pF fin 100kHz 2 3 2 3 Common Mode Rejection Ratio dB Vo 1 4V Vic 1V to 7 4V 60 80 60 80 Supply Voltage Rejection Ratio dB Vec 5V to 10V 1 4V 60 70 60 70 cc Supply Current Av 1 no load Vo DN 800 1300 800 1300 Tmin Tamb Tmax 1400 1500 Output Short Circuit Current mA 100mV Vo OV 60 60 Output Sink Current mA Vig 100mV Vo Voc 45 45 Slew Rate at Unity Gain V us 10 Ci 100pF Vi to7V 4 5 4 5 Phase Margin at Unity Gain degrees Ay 400 Ri 10kQ 10pF 65 65 100pF 50 50 Overshoot Factor 10pF 30 30 100pF 30 30 Equivalent Input Noise Voltage f 1kHz Rs 1000 30 30 ZC Maximum values including unavoidable inaccuraci
10. es of the industrial test GS THOMSON MICROELECTRONICS 11 15 TS271C 1 M TYPICAL CHARACTERISTICS FOR 1304A Figure 20 Supply Current each amplifier ver Figure 21 Input Bias Current versus Free Air sus Supply Voltage Temperature die 9 5 2 H Z 0 6 Ke oc 25 5 5 0 4 2 lt gt m a 0 2 D 2 D 2 0 4 8 12 16 25 50 75 100 125 SUPPLY VOLTAGE Voc V TEMPERATURE T amb C Figure 22a High Level Output Voltage versus Figure 22b High Level Output Voltage versus High Level Output Current High Level Output Current zB _ 20 Tamb 25 C 2 4 Vig 100mV 2216 pe E EEN S 3 d att tt wet 4 a E MEA MEN SC 5 aa ne giu SS S et Mes 310 8 6 4 2 0 50 40 30 20 10 0 OUTPUT CURRENT mA OUTPUT CURRENT MA Figure 23a Low Level Output Voltage versus Figure 23b Low Level Output Voltage versus Low Level Output Current Low Level Output Current im gt gt E d gt gt 8 8 lt lt O 9 gt E E 1 T T Vic 0 5V E Vig 100mV 0 4 8 12 16 20 OUTPUT CURRENT mA OUTPUT CURRENT 1 oL mA 12 15 SGS THOMSON MICROELECTRONICS 5271 TYPICAL CHARACTERISTICS FOR Jeer
11. ponsibility for the consequences of use of suchinformation nor for any infringement of patents or other rights of third parties which may result from its use No license is granted by implication or otherwise under any patent or patent rights of SGS THOMSON Microelectronics Specification mentioned in this publication are subject to change without notice This publication supersedes and replaces all information previously supplied SGS THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS THOMSON Microelectronics 1997 SGS THOMSON Microelectronics Printed in Italy All Rights Reserved SGS THOMSON Microelectronics GROUP OF COMPANIES Australia Brazil Canada China France Germany Hong Kong Italy Japan Korea Malaysia Malta Morocco The Netherlands Singapore Spain Sweden Switzerland Taiwan Thailand United Kingdom U S A G5 THOMSON Hos MICROELECTRONICS PM SO8 EPS SO8 TBL ORDER CODE
12. y low input currents The major advantage versus JFET devices is the very low CC input currents drift with temperature see figure 3 Output 1 2 3 4 5 6 7 8 October 1997 1 15 TS271C 1 M BLOCK DIAGRAM Second Iset Input MAXIMUM RATINGS Symbol Parameter Value Unit Vcc Supply Voltage note 1 18 V Differential Input Voltage note 2 18 V Input Voltage note 3 0 3 to 18 V ERE Current for Vcc gt 15V 330 mA 2 Input Current 5 Operating Free Air Temperature Range TS271C AC BC 0 to 70 52711 40 to 125 TS271M AM BM 55 to 125 Storage Temperature Range 65 to 150 Notes 1 All voltage values except differential voltage are with respect to network ground terminal 2 Differential voltages are thenon inverting input terminal with respect to the inverting input terminal 3 The magnitude of the input and the output voltages must never exceed the magnitude of the positive supply voltage OPERATING CONDITIONS Supply Voltage 3 to 16 Common Mode Input Voltage Range 0 Voc 1 5 S68 THOMSON 2 MICROELECTRONICS 75271 SCHEMATIC DIAGRAM SHO 5 O O jueun 195 3 15 MICROELECTRONICS Zar G5 THOMSON TS271C 1 M OFFSET VOLTAGE NULL CIRCUIT RESISTOR BIASING Rset CONNECTED Rser CONNECTED OFFSET COMPENSATION GUARANTE
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ST TS271C I M PROGRAMMABLE CMOS SINGLE OPERATIONAL AMPLIFIERS handbook