ST L6386 HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER handbook
Contents
1. 800 Figure 15 Output Sink Current vs Tempera ture 1000 current mA 7 10 8 10 OUTLINE AND MECHANICAL DATA L6386 mm m OUTLINE AND ae a re a MECHANICAL DATA Par or ozs ooa o oo raat pre Toe e oss ass foon fors Por as Foa faoor foo 1 D and F do not include mold flash or protrusions Mold flash or potrusions shall not exceed 0 15mm 006inch ky 9 10 L6386 Information furnished is believed to be accurate and reliable However STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics Specification mentioned in this publication are subject to change without notice This publication supersedes and replaces all information previously supplied STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics The ST logois a registered trademark of STMicroelectronics 1999 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia Brazil China Finland France Germany Hong Kong India Italy Japan Malaysia Malta Morocco Singapore Spain2. Sweden Switzerland United Kingdom U S A http www st com 4 10 10
3. external power MOS Rason is the on resistance of the bootstrap DMOS and Tcharge is the charging time of the bootstrap capacitor For example using a power MOS with a total gate charge of 30nC the drop on the bootstrap DMOS is about 1V if the Tcharge is 5us In fact Via R 1250 0 8V Vdrop has to be taken into account when the volt age drop on Cgoor is calculated if this drop is too high or the circuit topology doesn t allow a sufficient charging time an external diode can be used D99IN1056 5 10 L6386 Figure 5 Turn On Time vs Temperature Figure 8 VeBoot UV Turn On Threshold vs Temperature 15 14 13 S 12 11 S 10 9 8 7 45 25 0 25 50 75 100 125 Tj C Figure 6 Turn Off Time vs Temperature Figure 9 Veoot UV Turn Off Threshold vs Temperature Vcc 15V 45 25 0 25 50 75 100 125 45 25 0 25 50 75 100 125 Tj C Tj C Figure 7 Shutdown Time vs Temperature Figure 10 Veoot UV Hysteresis 45 2 0 25 50 75 100 125 45 25 0 2 50 75 100 125 Tj C Tj C 6 10 i Figure 11 Vcc UV Turn On Threshold vs Tem perature 50 75 100 125 Tj C Figure 12 Vcc UV Turn Off Threshold vs Temperature Figure 13 Vcc UV Hysteresis vs Tempera ture 3 Typ L6386 Figure 14 Output Source Current vs Tem perature 1000 Vcc 15V
4. O 0 Lea OO hJ L6386 HIGH VOLTAGE HIGH AND LOW SIDE DRIVER a HIGH VOLTAGE RAIL UP TO 600V a dV dt IMMUNITY 50 V nseciN FULL TEM PERATURE RANGE a DRIVER CURRENT CAPABILITY 400 mA SOURCE 650 mA SINK a SWITCHING TIMES 50 30 nsec RISE FALL WITH 1nF LOAD S014 DIP14 a CMOS TTL SCHMITT TRIGGER INPUTS WITH HYSTERESIS AND PULL DOWN ORDERING NUMBERS a UNDER VOLTAGE LOCK OUT ON LOWER AND UPPER DRIVING SECTION 9860 Peeks INTEGRATED BOOTSTRAP DIODE a OUTPUTS IN PHASE WITH INPUTS pendent referenced Channel Power MOS or DESCRIPTION IGBT The Upper Floating Section is enabled to The L6386 is an high voltage device manufac Work with voltage Rail up to 600V The Logic In tured with the BCD OFF LINE technology thas puts are CMOS TTL compatible for ease of inter a Driver structure that enables to drive inde facing with controlling devices BLOCK DIAGRAM BOOTSTRAP DRIVER 14 HVG DENE en DRIVER 13 LOGIC D97IN520D July 1999 1 10 L6386 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit Total Power Dissipation Tj 85 C Junction Temperature Note ESD immunity for pins 12 13 and 14 is guaranteed up to 900V Human Body Model PIN CONNECTION D97IN521A THERMAL DATA Symbol Parameter sora P14 Unit Thermal Resistance Junction to Ambient 165 100 PIN DESCRIPTION Open Drain Diagnostic Output Comparator Input High Side Driver Output Boot
5. strapped Supply Voltage The circuit guarantees 0 3V maximum on the pin Isink 10mA with VCC gt 8V This allows to omit the bleeder resistor connected between the gate and the source of the external MOSFET normally used to hold the pin low the gate driver assures low impedance also in SD condition 2 10 iy L6386 RECOMMENDED OPERATING CONDITIONS ELECTRICAL CHARACTERISTICS AC Operation Vcc 15V Tj 25 C High Low Side Driver Turn On Vout 0V Propagation Delay High Low Side Driver Turn Off Vout OV Propagation Delay 2 vs Shut Down to High Low Side Vout OV 9 13 Propagation Delay Rise Time CL 1000pF Symbol Pin Parameter _ Test Condition _ Min Typ Max Unit Low Supply Voltage Section c 4 Supply Voltage Vccth1 Vcc UV Turn On Threshold Vccth2 Vcc UV Turn Off Threshold Vcchys Vcc UV Hysteresis Iqccu Undervoltage Quiescent Supply Current lgcc Quiescent Current Bootstrapped Supply Section Vboot 14 Vbth1 Vbth2 Vbhys Igboot Vout Vboot k Rdson Vcc gt 12 5V Vin 0V Driving Buffers Section Iso 9 13 High Low Side Driver Short Circuit Source Current Isi High Low Side Driver Short Circuit Sink Current lt Q Logic Inputs Vi 1 2 3 V Low Level Logic Input Current Vcc Vesoott Vec Vesootz R s tested in the following way R r 9 Baseni Ia l1 Vcc VcBoot1 l2 Vcc VcBoort2 where is pin 8 current when Vcgoot VceBoort1 l2 when Vcgoo
6. t VcBoot2 ky 3 10 L6386 DC OPERATION continued symbol Pin Parameter _ Test Condition Min Typ Max Unit Sense Comparator Sense Comparator S O Vio Input OffsetVoltage Jof 10 mV _ tio 6 Input Bias Current vonzos 0 2 u Vol 2 Open Drain Low Level Output Voltage lod 2 5mA vret Comparator Reference voltage 0 460 os 0 540 v Figure 1 Timing Waveforms HOUT LOUT VREF VcIN DIAG D97IN522A Note SD active condition is latched until next negative IN edge Figure 2 Typical Rise and Fall Times vs Load Capacitance time D99IN1054 0 1 2 3 4 For both high and low side buffers 25 C Tamb 5 C nF 4 10 Figure 3 Quiescent Current vs Supply Voltage Iq D99IN1057 0 2 4 6 8 10 12 14 16 Vs V LSTA BOOTSTRAP DRIVER A bootstrap circuitry is needed to supply the high voltage section This function is normally accom plished by a high voltage fast recovery diode fig 4a In the L6386 a patented integrated structure replaces the external diode It is realized by a high voltage DMOS driven synchronously with the low side driver LVG with in series a diode as shown in fig 4b An internal charge pump fig 4b provides the DMOS driving voltage The diode connected in series to the DMOS has been added to avoid undesirable turn on of it CBOOT selectionand charging To choose the proper CBoort value the ex
7. ternal MOS can be seen as an equivalent capacitor This capacitor Cext is related to the MOS total gate charge The ratio between the capacitors Cext and Cgoot is proportional to the cyclical voltage loss It has to be CsBoot gt gt gt Cext e g if Qgate is 30NC and Vgate is 10V Cext is 3nF With Cgoot 100nF the drop would be 300mV If HVG has to be supplied for a long time the Cgoor selection has to take into account also the leakage losses e g HVG steady state consumption is lower than 200A so if HVG Ton is 5ms Cgoor has to Figure 4 Bootstrap Driver L6386 supply 1uC to Cext This charge on a 1uF ca pacitor means a voltage drop of 1V The internal bootstrap driver gives great advan tages the external fast recovery diode can be avoided it usually has great leakage current This structure can work only if Vout is close to GND or lower and in the meanwhile the LVG is on The charging time Tcharge of the CBoort is the time in which both conditions are fulfilled and it has to be long enough to charge the capacitor The bootstrap driver introduces a voltage drop due to the DMOS Roson typical value 125 Ohm At low frequency this drop can be ne glected Anyway increasing the frequency it must be taken in to account The following equation is useful to compute the drop on the bootstrap DMOS Qgate Varop IchargeRason Varop Rdson Tcharge where Qgate is the gate charge of the
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