ST STP20N20/STF20N20/STD20N20 handbook
Contents
1. DPAK DPAK HV24350 GC20460 Ip A Tj 150 C Tc 25 C Single 2 pulse 10 FRE R 10us 1 09 i 6 0 5 al 2 EG NE 1 L 100 19 E N N d 0 2 Zp k Rinse s d ty T seg dx 107 e ls 10 10 0 02 0 05 6 EH 0 01 f le SINGLE PULSE T 2 10 7 6 1 4 58 488 77 488 107 5 4 3 2 1 107 e o p 03 Vos 10 0 0 0 107 t s Figure 4 Safe Operating Area For TO 220FP Figure 7 Thermal Impedance For TO 220FP HV24360 K GC20940 b A Tj 150 C 0 5 4 Tcz25 C Single 0 2 2 pulse 10 0 1 107 2 30 N 0 05 7 h r 0 02 10 5 RE J MM 0 01 Zin k Rinse S s 1045 5 4 Tea N oops 0 2 SINGLE PULSE 19 7 gt N LI 1 0 L 1ms HI TT 10ms EM X 2 10 2 468 2 468 2 468 2 4 68 107 4 3 2 1 0 07 o o 03 Vos V 10 0 0 0 O t s Figure 5 Output Characteristics Figure 8 Transfer Characteristics HV24290 HV24295 b A lo A Vos 10V 60 60 45 45 30 30 15 15 0 5 10 15 20 25 Vos v 0 2 4 6 8 Ves V 4 13 SI Figure 9 Transconductance2. 1 m Pe tama EE ip m NEN LL mme ee Je e Pulse width limited by safe operating area i Isp lt 18A di dt x 400A us VDD lt V BR DSS Table 4 Thermal Data Rthj case Thermal Resistance Junction case Max eee a amb Thermal Resistance Junction ambient Max Maximum Lead Temperature For Soldering Purpose When mounted on 1inch FR 4 2 Oz copper board Table 5 Avalanche Characteristics Avalanche Current Repetitive or Not Repetitive pulse width limited by Tj max Single Pulse Avalanche Energy starting Tj 25 C Ip lar Vpp 50 V ELECTRICAL CHARACTERISTICS TcAsE 25 C UNLESS OTHERWISE SPECIFIED Table 6 On Off V BR pss Drain source test MM 1 mA Ves 0 V Breakdown Voltage Ipss Zero Gate Voltage Vps Max Rating HA Drain Current Vas 0 Max Rating Tc 125 C 10 se lass Gate body Leakage Gs 20V Current Vps 0 Gate Threshold Voltage Vos Vas Ip 250 pA gt ES ETE EI Static Drain source On Ves 10V Ip 10 A 0 10 0 125 Resistance a 2 13 STP20N20 STF20N20 STD20N20 ELECTRICAL CHARACTERISTICS CONTINUED Table 7 Dynamic gts 1 Forward Transconductance Vos 25 V I0 10A Input Capacitance Vps 25V f 1 MHz Vas 0 Output Capacitance Reverse Transfer Capacitance Turn on Delay Time Vpp 100 V Ip 10A Rise Time Rg 4 7 Q Vas 10V Turn off Delay Time see Figure 17 Fall Time Tota
3. HV24300 grs S 18 00 15 00 12 00 9 00 6 00 0 5 10 15 Isp A Figure 10 Gate Charge vs Gate source Voltage HV24280 Ves V 12 Vo 1 60V p 20A 2 0 5 10 15 20 25 30 Geint Figure 11 Normalized Gate Threshold Voltage vs Temperature Vee th HV24320 VEE VGE norm Ie 25044 1 1 1 0 0 9 0 8 0 7 a 50 0 50 100 150 T CC a STP20N20 STF20N20 STD20N20 Figure 12 Static Drain source On Resistance HV24310 Rps on a 0 104 0 100 0 096 0 092 60 05 0 15 20 X Figure 13 Capacitance Variations HV24270 0 10 20 30 40 Vos V Figure 14 Normalized On Resistance vs Tem perature HV24330 Riston norm 2 2 1 8 1 4 ov 1 0 ex 0 6 50 0 50 100 150 Tj CC 5 13 STP20N20 STF20N20 STD20N20 Figure 15 Source Drain Forward Characteris tics HV24340 VSD OV TJ S0T 1 0 0 9 25T 0 8 150 0 7 0 6 6 5 10 15 Tant AD 6 13 Figure 16 Unclamped Inductive
4. Load Test Cir cuit SC05970 Figure 17 Switching Times Test Circuit For Resistive Load 5005990 Figure 18 Test Circuit For Inductive Load Switching and Diode Recovery Times 3 3 uF SC06010 STP20N20 STF20N20 STD20N20 Figure 19 Unclamped Inductive Wafeform V BR DsS Von 5C05980 Figure 20 Gate Charge Test Circuit I g CONST Vi 20V Veway e 2200 F SC06000 7 3 STP20N20 STF20N20 STD20N20 TO 220 MECHANICAL DATA mm inch POA0015988 M d 8 13 TO 220FP MECHANICAL DATA STP20N20 STF20N20 STD20N20 mm inch PIM MIN TYP MAX MIN TYP MAX A 4 4 4 6 0 173 0 181 B 2 5 2 7 0 098 0 106 D 2 5 2 75 0 098 0 108 E 0 45 0 7 0 017 0 027 F 0 75 1 0 030 0 039 F1 1 15 1 7 0 045 0 067 F2 1 15 1 7 0 045 0 067 G 4 95 5 2 0 195 0 204 G1 2 4 2 7 0 094 0 106 H 10 10 4 0 393 0 409 L2 16 0 630 L3 28 6 30 6 1 126 1 204 L4 9 8 10 6 0385 0 417 L5 2 9 3 6 0 114 0 141 L6 15 9 16 4 0 626 0 645 L7 9 9 3 0 354 0 366 3 3 2 0 118 0 126 a 9 13 STP20N20 STF
5. 20N20 STD20N20 TO 252 DPAK MECHANICAL DATA DIM mm inch MIN TYP MAX MIN TYP MAX A 2 20 2 40 0 087 0 094 A1 0 90 1 10 0 035 0 043 A2 0 03 0 23 0 001 0 009 B 0 64 0 90 0 025 0 035 D 6 00 6 20 0 236 0 244 6 40 6 60 0 252 0 260 4 40 4 60 0 173 0 181 H 9 35 10 10 0 368 0 398 L2 0 8 0 031 L4 0 60 1 00 0 024 0 039 V2 0 8 0 0 NEM R C AL Y gt A C2 E 41 LL V2 A H 0 60 MIN FLAT ZONE 42 E2 L4 B II 3 ia II Il od x E 2 d G 82 i I I H CL PO32P B 10 13 a x DPAK FOOTPRINT STP20N20 STF20N20 STD20N20 TUBE SHIPMENT no suffix All dimensions are in millimeters 0 8 10 1 BASE QTY 5 BULK QTY 30x 21 3 10 2 Tube length 532 40 5 All dimensions are in millimeters amp 20 1 TAPE AND REEL SHIPMENT suffix T4 A mm min AGreen Fr i P uem M sint boston DIM un ino Fa AA MIN MAX MIN MAX d jaj jw d d A 330 12 992 f TE A e Ti B 1 5 0 059 2 F R h Le C 12 8 13 2 0 504 0 520 B J H i p ZK M I 20 2 0 795 V Tann p T 6 16 4 18 4 0 645 0 724 1 ran F i mon d Full radius n sara ker A paz N 50 1 968 Li 7 tapa star cn 7 Za min T 22 4 0 881 ki m vii TAPE MECHANICAL DATA BASE DI BHO AD 2500 2
6. 500 mm inch MIN MAX MIN MAX Va Fz Pat 10 SS Curie 6 8 7 0 267 0 275 a D pr I Lennon on tape 10 4 10 6 0 409 0 417 T 12 1 0 476 b 1 5 1 6 0 059 0 063 w 1 5 0 059 i 1 65 1 85 0 065 0 073 poder K fe on 7 4 7 6 0 291 0 299 mud Fg y 2 55 2 75 0 100 0 108 3 9 4 1 10 153 0 161 7 9 8 1 0 311 0 319 Gg A min 1 9 2 1 0 075 0 082 FI Ki Ss K R 40 1 574 z W 15 7 16 3 0 618 0 641 FEED DIRECTION Boncding radar on sales type REEL MECHANICAL DATA 11 13 STP20N20 STF20N20 STD20N20 Table 9 Revision History Date Revision Description of Changes 06 Dec 2004 1 Data Brief 07 Dec 2004 2 First Revision 12 Jan 2005 3 Final datasheet 12 13 STP20N20 STF20N20 STD20N20 Information furnished is believed to be accurate and reliable However STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics Specifications mentioned in this publication are subject to change without notice This publication supersedes and replaces all information previously supplied STMicroelectronics products are not authorized for use as critical components in life support
7. LI 0 STD20N20 0 Avr STP20N20 YA STF20N20 STD20N20 N CHANNEL 200V 0 102 18A TO 220 TO 220FP DPAK LOW GATE CHARGE STripFET II MOSFET Table 1 General Features Figure 1 Package TYPE Voss le Prox STD20N20 200 V 0 1250 18A 90W STF20N20 200 V 0 1250 18A 25 W STP20N20 200 V 0 1250 18A 90W m TYPICAL Rps on 0 10 Q m EXCEPTIONAL dv dt CAPABILITY m LOW GATE CHARGE z TO 220FP m 100 AVALANCHE TESTED 10 220 DESCRIPTION This MOSFET series realized with STMicroelec 3 tronics unique STripFET process has specifically 1 been designed to minimize input capacitance and DPAK gate charge It is therefore suitable as primary switch in advanced high efficiency isolated DC DC converters Figure 2 Internal Schematic Diagram APPLICATIONS D 2 m HIGH CURRENT SWITCHING Q APPLICATIONS m HIGH EFFICIENCY DC DC CONVERTERS m PRIMARY SIDE SWITCH G 1 O S 3 SCO6140 Table 2 Order Codes SALES TYPE MARKING PACKAGE PACKAGING STD20N20T4 D20N20 DPAK TAPE amp REEL STF20N20 F20N20 TO 220FP TUBE STP20N20 P20N20 TO 220 TUBE Rev 3 January 2005 1 13 STP20N20 STF20N20 STD20N20 Table 3 Absolute Maximum ratings Syme Parametr ve um ozomear Tome Vps Drain source Voltage Ves 0 00 200 y om Fe A VV e emo e HE Drain Current continuous at Tc 25 a Drain Current IU at Tc 100 C _
8. devices or systems without express written approval of STMicroelectronics The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners O 2005 STMicroelectronics All Rights Reserved STMicroelectronics group of companies Australia Belgium Brazil Canada China Czech Republic Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom United States of America OL 13 13
9. l Gate Charge Vpp 160V Ip 20A Gate Source Charge Vas 10V Gate Drain Charge see Figure 20 Source drain Current Source drain Current pulsed Forward On Voltage Isp 20 A Vas 0 Reverse Recovery Time Isp 20 A di dt 100A us Reverse Recovery Charge Vpp 50V Tj 25 C Reverse Recovery Current see Figure 18 Reverse Recovery Time Isp 20 A di dt 100A us Reverse Recovery Charge Vpp 50V Tj 150 C Reverse Recovery Current see Figure 18 1 Pulsed Pulse duration 300 us duty cycle 1 5 Yo 2 Pulse width limited by safe operating area a 3 13 STP20N20 STF20N20 STD20N20 Figure 3 Safe Operating Area For TO 220 Figure 6 Thermal Impedance For TO 220
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ST STP20N20/STF20N20/STD20N20 handbook