SemiWell Semiconductor STP16A60 handbook
Contents
1. W 0 1 L 50 0 50 100 150 Junction Temperature C Time sec Fig 9 Gate Trigger Characteristics Test Circuit 102 V sv Ra Test Procedure I Test Procedure II Test Procedure III 4 5 STP16A60 TO 220 Package Dimension Dim mm Inch Min Typ Max Min Typ Max A 9 7 10 1 0 382 0 398 B 6 3 6 7 0 248 0 264 C 9 0 9 47 0 354 0 373 D 12 8 13 3 0 504 0 524 E 1 2 1 4 0 047 0 055 F 1 7 0 067 G 2 5 0 098 H 3 0 3 4 0 118 0 134 1 25 1 4 0 049 0 055 J 2 4 2 7 0 094 0 106 K 5 0 5 15 0 197 0 203 L 2 2 2 6 0 087 0 102 M 1 25 1 55 0 049 0 061 N 0 45 0 6 0 018 0 024 O 0 6 1 0 0 024 0 039 3 6 0 142 3 Gate 5 52. OO STP16AGQT O SemiWell semiconductor STP16A60 Bi Directional Triode Thyristor Features e Repetitive Peak Off State Voltage 600V R M S On State Current Ir gusy 16 A High Commutation dv dt e Non isolated Type General Description This device is suitable for AC switching application phase control application such as fan speed and temperature mod ulation control lighting control and static switching relay Absolute Maximum Ratings T 25 unless otherwise specified Symbol Parameter Condition Ratings Units VDRM Repetitive Peak Off State Voltage 600 V Ir RMS R M S On State Current Tc 98 C 16 A ITsm Surge On State Current ne Peak 155 170 A P It 120 A s Pam Peak Gate Power Dissipation 5 0 Ww Paav Average Gate Power Dissipation 0 5 WwW lem Peak Gate Current 2 0 A Vem Peak Gate Voltage 10 V Ty Operating Junction Temperature 40 125 C Tstg Storage Temperature 40 150 C Mass 2 0 g Feb 2003 Rev 2 1 5 copyright SemiWell Semiconductor Co Ltd All rights reserved STP16A60 Electrical Characteristics Ratings Symbol Items Conditions Unit Min Typ Max igen Repetitive Peak Off State Vp Vpnw Single Phase Half Wave m s 50 Er Current T 125 C Vim Peak On State Voltage Iz 25 A Inst Measurement 1 4 V Mont I 30 er II Gate Trigger Current V
3. p 6 V RL 10 Q 30 mA lara m 30 Vart I 1 5 Ver II Gate Trigger Voltage Vp 6 V R 10Q 1 5 V Vara m a 1 5 Vep Non Trigger Gate Voltage Ty 125 C Vp 1 2 VDRM 0 2 V NE w vis lu Holding Current 25 mA Rth j c Thermal Impedance Junction to case 1 4 C W 2 5 Fig 1 Gate Characteristics 0 D S o gt 0 o 10 3 6 Vo 0 2V 10 at i iii 10 10 10 Gate Current mA Fig 3 On State Current vs Maximum Power Dissipation 20 i e 180 18 e 150 z 16H 0 120 8 120 5 14 6 90 g 12 8 60 B 10 Q u 8 o 8 6 n 200 RMS On State Current A Fig 5 Surge On State Current Rating Non Repetitive a eo Surge On State Current A Time cvcles Var t C Var 25 On State Current A Allowable Case Temperature C STP16A60 Fig 2 On State Voltage i i i i i i 05 1 0 15 20 25 3 0 35 On State Voltage V Fig 4 On State Current vs Allowable Case Temperature RMS On State Current A Fig 6 Gate Trigger Voltage vs Junction Temperature 0 1 50 0 50 100 150 Junction Temperature C 3 5 STP16A60 Fig 7 Gate Trigger Current vs Fig 8 Transient Thermal Impedance Junction Temperature Transient Thermal Impedance C
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SemiWell Semiconductor STP16A60 handbook