ST STP15N06L/STP15N06LFI handbook
Contents
1. K 6 0 5 0 2 1071 0 05 0 02 0 01 Zin Rinse SINGLE PULSE B tp T gus 1073 107 10 10 10 1 10 amp s Derating Curve For ISOWATT220 Prot W Cacao pa 0 50 100 1507 C 0 1 2 3 4 5 Ves VW SGS THOMSON MICROELECTRONICS STP15NO6L FI Transconductance Static Drain source On Resistance 6550850 Ros on GC51380 aeu Eq esr 0 10 1 y VALE 24 0 10 2 1 GC5ZU10 Vos 40V u NE can EI 0 4 8 12 Qg nc Normalized Gate Threshold Voltage vs Normalized On Resistance vs Temperature Temperature Vest 6052650 Ros on GC52870 norm 50 0 50 100 T CC sy SGS THOMSON V iuchosuscTRORICS STP15NO6L FI Turn on Current Slope Turn off Drain source Voltage Slope di Jat 6253280 dv dt GC53430 Aus v ns 0 5 0 40 80 120 9 Accidental Overload Area Source drain Diode Forward Characteristics 9555960 6655080 0 10 20 30 40 50 Vos v 6 10 SGS THOMSON WM isuckosuscTRORICS STP15NO6L FI F2. STPISNOAL O O ST SGS THOMSON STP15NO6L V STP15NO6LFI CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR mee Rees STP15N06L 60 V lt 0 15 Q 15 STP15NO6LFI 60 V lt 0 15 Q 10 TYPICAL Roson 0 115 AVALANCHE RUGGED TECHNOLOGY 100 AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100 C LOW GATE CHARGE LOGIC LEVEL COMPATIBLE INPUT 175 C OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION TO 220 ISOWATT220 APPLICATIONS HIGH CURRENT HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS REGULATORS DC DC 8 DC AC CONVERTERS MOTOR CONTROL AUDIO AMPLIFIERS AUTOMOTIVE ENVIRONMENT INJECTION ABS AIR BAG LAMPDRIVERS Etc INTERNAL SCHEMATIC DIAGRAM D 2 6 1 5 3 ABSOLUTE MAXIMUM RATINGS Parameter Value STP15NO6L STP15NO6LFI Drain source Voltage Vas 0 Drain gate Voltage Ras 20 Gate source Voltage Drain Current continuous at T 25 C Drain Current continuous at 100 C Drain Current pulsed Total Dissipation at To 25 C Derating Factor Insulation Withstand Voltage DC Storage Temperature 65 to 175 Max Operating Junction Temperature 175 Pulse width limited by safe operating area July 1993 1 10 STP15NO6L FI THERMAL DATA TO 220 ISOWATT220 Rthj amb Thermal Resistance Junction ambient Max Rthe sink Thermal Resistance Case sink Typ T Maximum Lead Temperature For S
3. Morocco The Netherlands Singapore Spain Sweden Switzerland Taiwan Thailand United Kingdom U S A 10 10
4. test circuit figure 3 Turn on Current Slope pp 40V Ip 15A A us 500 Vas 5V see test circuit figure 5 Total Gate Charge 40 Ip 15A Ves 5V nC Gate Source Charge nC Gate Drain Charge nC Off voltage Rise Time Vpp2 40V p2 15A Fall Time Ra2500 Vas 5V Cross over Time see test circuit figure 5 SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min Typ Max Unit Source drain Current Source drain Current pulsed Forward On Voltage Isp 15 Vas 0 trr Reverse Recovery Isp 15 A di dt 100 A us 80 ns Time Vpp225V 150 C Orr Reverse Recovery see test circuit figure 5 0 18 uC Charge IRRM Reverse Recovery 4 5 A Current Pulsed Pulse duration 300 us duty cycle 1 5 96 Pulse width limited by safe operating area Safe Operating Areas For TO 220 Safe Operating Areas For ISOWATT220 6634446 6654450 2 468 Vos V SCS THOMSON MICROELECTRONICS STP15NO6L FI Thermal Impedance For TO 220 1071 Zim BE 1 2 1075 072 10 5 GC2332D 0 50 100 150 Tense C 0 4 8 12 16 Vos V ky 4 10 Thermal Impedance For ISOWATT220 CCZ0340
5. ig 1 Unclamped Inductive Load Test Circuits Fig 2 Unclamped Inductive Waveforms VtER DSS ELE SUD5370 Fig 3 Switching Times Test Circuits For Fig 4 Gate Charge Test Circuit Resistive Load 55054 Fig 5 Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time El 7 10 SGS THOMSON V imcrocvecTRomes STP15NO6L FI TO 220 MECHANICAL DATA 8 10 STP15NO6L FI ISOWATT220 MECHANICAL DATA 9 10 STP15NO6L FI Information furnished is believed to be accurate and reliable However SGS THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use No license is granted by implication or otherwise under any patent or patent rights of SGS THOMSON Microelectronics Specifications mentioned in this publication are subject to change without notice This publication supersedes and replaces all information previously supplied SGS THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS THOMSON Microelectonics O 1994 SGS THOMSON Microelectronics All Rights Reserved SGS THOMSON Microelectronics GROUP OF COMPANIES Australia Brazil France Germany Hong Kong Italy Japan Korea Malaysia Malta
6. oldering Purpose AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit Avalanche Current Repetitive or Not Repetitive A pulse width limited by T max 5 lt 1 Single Pulse Avalanche Energy mJ starting T 25 C Ip lar 25 V Repetitive Avalanche Energy mJ pulse width limited by T max 5 lt 1 Avalanche Current Repetitive or Not Repetitive A Tc 100 C pulse width limited by T max 8 1 ELECTRICAL CHARACTERISTICS Tcase 25 C unless otherwise specified OFF Parameter Test Conditions Drain source Ip 250 uA Vas 0 Breakdown Voltage Zero Gate Voltage Vos Max Rating Drain Current Vas 0 Vos Max Rating x 0 8 Tc 125 C Gate body Leakage Ves 15V Current Vps 0 Vasith Gate Threshold Voltage Vos Vas Io 250 uA Static Drain source On Vas 5 V Ip 7 5A Resistance Ves 5 V Ip 7 5A T 100 On State Drain Current Vos gt ID on x RDs on max 15 Ves 10 V Parameter Test Conditions Min Typ Max Unit Forward Vos gt lp on X Rbs onmax 1 7 5 5 9 S Transconductance DYNAMIC Input Capacitance Vos 25VW f 1MHz Vas 0 Output Capacitance Reverse Transfer Capacitance 2 10 SGS THOMSON V imcrocectromes STP15NO6L FI ELECTRICAL CHARACTERISTICS continued SWITCHING ON Parameter Test Conditions Turn on Time Voo 25VW lp 7 5A mo me unir Rise Time Re 502 Vas 5V 190 270 see
Download Pdf Manuals
Related Search
ST STP15N06L/STP15N06LFI handbook