ST STP13NK60Z/FP STB13NK60Z STB13NK60Z-1 STW13NK60Z handbook
Contents
1. MAX 0 181 0 106 0 036 0 067 0 023 0 053 0 368 0 106 0 409 0 531 0 149 0 055 P011P5 E 11 14 STP13NK60Z STP13NK60ZFP STB13NK60Z STB13NK60Z 1 STW13NK60Z TO 247 MECHANICAL DATA 12 14 OL STP13NK60Z STP13NK60ZFP STB13NK60Z STB13NK60Z 1 STW13NK60Z D PAK FOOTPRINT I 5 08 wege 13 50 9 75 All dimensions are in millimeters TUBE SHIPMENT no suffix BASE QTY 50 BULK QTY 1000 Tube length 532 0 5 N A e All dimensions 9 5 0 2 are in millimeters TAPE AND REEL SHIPMENT suffix T4 40 mm min Access hole at slot location Full radius in core for tape start 25mm min 1 width TAPE MECHANICAL DATA MIN max 0413 80 157 159 05180528 15 15 6059 063 0065 0418 ZE 1 H REEL MECHANICAL DATA G measured BASE QTY BULK QTY 1000 1000 e y 10 pitches cumulative r4 tolerance on tape 0 2mm Center line of cavity User Direction of Feed NN Ly es type FEED DIRECTION Bending radius 13 14 STP13NK60Z STP13NK60ZFP STB13NK60Z STB13NK60Z 1 STW13NK60Z 14 14 Information furnished is believed to be accurate and reliable Ho2. 1 0 9 0 8 0 7 50 0 50 00 150 IK DD Source drain Diode Forward Characteristics HV07310 Ven V2 Tebsd 0 9 0 8 0 7 190 7G 0 6 0 5 0 2 4 6 8 10 IsKA Maximum Avalanche Energy vs Temperature HV07325 300 200 100 im 25 50 75 100 125 1x0 6 14 Normalized On Resistance vs Temperature HV07305 Rax on 10 249 50 0 50 100 150 xD Normalized BVDSS vs Temperature HV07315 B VpssC V 5 norm 1 15 1 1 0 95 0 9 td lt 50 0 50 100 1507140 STP13NK60Z STP13NK60ZFP STB13NK60Z STB13NK60Z 1 STW13NK60Z Fig 1 Unclamped Inductive Load Test Circuit Fig 2 Unclamped Inductive Waveform UNCLAMPED INDUCTIVE WAVEFORMS L E V BR DSS HS Y Y DUT H L Ld P d Py iu 605970 SCO5980 Fig 3 Switching Times Test Circuit For Fig 4 Gate Charge test Circuit Resistive Load 4 UV baxo Ri 200 3
3. 3 T ER 100nF BOB du lu B V 220V Vguax 000 A D U T Vos H o r O L Re 2200 dur ur 2 70 8 Ez EN ako W T l x 606000 05900 Fig 5 Test Circuit For Inductive Load Switching And Diode Recovery Times gt A FAST DIODE L 100uH 6 e H e S 08 3 3 1000 B gt uF Yop 250 D cu HL ek Dur El Re 5 06010 7 14 STP13NK60Z STP13NK60ZFP STB13NK60Z STB13NK60Z 1 STW13NK60Z TO 220 MECHANICAL DATA inch MAX MIN TYP MAX 4 60 0 173 0 181 1 32 0 048 0 051 2 72 0 094 0 107 0 050 0 70 0 019 0 027 0 88 0 024 0 034 1 70 0 044 0 067 1 70 0 044 0 067 5 15 0 194 0 203 2 7 0 094 0 106 10 40 0 393 0 409 0 645 14 0 0 511 0 551 2 95 0 104 0 116 15 75 0 600 0 620 6 6 0 244 0 260 3 93 0 137 0 154 DIA 3 75 3 85 0 147 0 151 8 14 STP13NK60Z STP13NK60ZFP STB13NK60Z STB13NK60Z 1 STW13NK60Z TO 220FP MECHANICAL DATA 573 9 14 STP13NK60Z STP13NK60ZFP STB13NK60Z STB13NK60Z 1 STW13NK60Z D PAK MECHANICAL DATA 10 14 STP13NK60Z STP13NK60ZFP STB13NK60Z STB13NK60Z 1 STW13NK60Z TO 262 2 MECHANICAL DATA
4. 5 0 2 Zw K Ric i T pco 0 02 0 05 ES 0 01 fsb GLE PULSE T 107 5 4 3 2 1 10 0 0 10 107 t s STP13NK60Z STP13NK60ZFP STB13NK60Z STB13NK60Z 1 STW13NK60Z Output Characteristics Transfer Characteristics HVO 240 HV07230 Ves 10V Vos 25V BV 20 20 7V 15 15 6V 10 10 5 5v 5 0 5 10 15 20 0 2 4 6 8 Vos V Transconductance Static Drain source On Resistance HV07250 Ros on 7260 g s S Vos 8V T 500 Ohm Vos 15 25 0 52 12 0 50 9 150 0 48 6 5 0 46 0 2 4 6 8 0 4 6 8 10 1 Gate Charge vs Gate source Voltage Capacitance Variations HV07280 HV07290 Ves V C pF f 1MHz Ves 0V 12 4000 9 3000 Ciss 6 2000 3 1000 Coss 0 20 40 60 Qg nC 0 10 20 30 40 Vos V 573 5 14 STP13NK60Z STP13NK60ZFP STB13NK60Z STB13NK60Z 1 STW13NK60Z Normalized Gate Threshold Voltage vs Temp HV07300 Ves th norm Vo Vas b 250 LA 1 1
5. NK60ZFP STW13NK60Z Loc eerie ee en Wem DraivgateVoteoe 0 89 ie a mm RN EN b Drain Current continuous at 25 130 b Drain Current continuous at 100 C 82 820 ww u A ME MAE E RU o ene ne Operating Junction 55 to 150 Storage Temperature e as Ls A AVALANCHE CHARACTERISTICS Avalanche Current Repetitive or Not Repetitive 10 A pulse width limited by Tj max Single Pulse Avalanche Energy 400 mJ starting Tj 25 Ip lar Vpp 50 V GATE SOURCE ZENER DIODE _Parameler Testes Min e DW uni e Pulse width limited by safe operating area 1 Isp 13 A di dt lt 200A us Tj TJMAX Limited only by maximum temperature allowed THERMAL DATA BVaso Gate Source Breakdown Igs 1mA Open Drain Voltage When mounted on minimum Footprint PROTECTION FEATURES OF GATE TO SOURCE ZENER DIODES The built in back to back Zener diodes have specifically been designed to enhance not only the device s ESD capability but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source In this respect the Zener voltage is appropriate to achieve an efficient and cost effective intervention to protect the device s integrity These integrated Zener diodes thus avoid the usage of
6. O O STBI3NK60 Ti STP13NK60Z FP STB13NK60Z 1 STB13NK60Z 1 STW13NK60Z N CHANNEL 600V 0 480 13A TO 220 FP D PAK I PAK TO 247 Zener Protected SuperMESH MPower MOSFET STP13NK60Z STP13NK60ZFP STB13NK60Z STB13NK60Z 1 STW13NK60Z TYPICAL Rps on 0 48 EXTREMELY HIGH dv dt CAPABILITY 100 AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY DESCRIPTION The SuperMESH series is obtained through an INTERNAL SCHEMATIC DIAGRAM extreme optimization of ST s well established strip based PowerMESH layout In addition to pushing 002 on resistance significantly down special care is tak en to ensure a very good dv dt capability for the most demanding applications Such series comple ments ST full range of high voltage MOSFETs in cluding revolutionary MDmesh products 615010 5 3 APPLICATIONS HIGH CURRENT HIGH SPEED SWITCHING IDEAL FOR OFF LINE POWER SUPPLIES ADAPTORS AND PFC LIGHTING ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STP13NK60Z P13NK60Z TO 220 TUBE STP13NK60ZFP P13NK60ZFP TO 220FP TUBE STB13NK60ZT4 B13NK60Z D PAK amp REEL STB13NK60Z B13NK60Z D PAK TUBE ONLY UNDER REQUEST STB13NK60Z 1 B13NK60Z 2 TUBE STW13NK60Z W13NK60Z TO 247 TUBE February 2003 1 14 STP13NK60Z STP13NK60ZFP STB13NK60Z STB13NK60Z 1 STW13NK60Z ABSOLUTE MAXIMUM RATINGS STB13NK60Z 1 STP13
7. ating Area For TO 247 HV0722 Ip A 4 10 pa on 100s Sw NON 5 Le PS 1ms 0 s 10 10ms Eee TRE 2 Tj 150 C 1 o Z Te 25 C ingle D C OPERATION pelse 2 i 4 68 02 4 68 Vos V 4 14 Thermal Impedance For 220 02 2 6620540 6 0 5 0 2 0 1 107 0 05 0 02 Zi tp T SINGLE PULSE Es T 107 1075 107 t s Thermal Impedance For TO 220FP K 6 20521 0 5 0 2 0 1 107 0 05 0 02 0 01 Zth Rinse 10 2 SINGLE PULSE tp 7 tp E 107 4 3 0 107 10 107 07 10 5 Thermal Impedance For TO 247 K GC20530 10 0
8. external components 2 14 STP13NK60Z STP13NK60ZFP STB13NK60Z STB13NK60Z 1 STW13NK60Z ELECTRICAL CHARACTERISTICS Tcase 25 C UNLESS OTHERWISE SPECIFIED ON OFF Symbol Test Conditions V er pss Drain source 1 mA Ves 0 V Breakdown Voltage Ipss Zero Gate Voltage Vps Max Rating Drain Current Vas 0 Vps Max Rating Tc 125 lass Gate body Leakage Current Vps 0 Input Capacitance Output Capacitance Reverse Transfer a Turn on Delay Time Vpp2300V lp2 5A Rise Time 4 70 Ves 10V Resistive Load see Figure 3 Total Gate Charge Vpp 480 V Ip 10A Gate Source Charge Vas 10V Gate Drain Charge Symbol TestGondions Win I ys umi Turn off Delay Time Vpp 300 V 6 5 61 Fall Time Ra 4 70 Vas 10 V 12 Resistive Load see Figure 3 Off voltage Rise Time Vpp 480V 10 A 10 Fall Time Ra 4 70 Vas 10V 9 Cross over Time Inductive Load see Figure 5 20 SOURCE DRAIN DIODE Symbol Parameter Test TestConditions Isp NEL __ Current EL u 2 Source drain Current pulsed 40 trr Reverse Recovery Time Isp 10 A di dt 100 A us gt ns Reverse Recovery Charge Vpp 35 V Tj 150 E IRRM Reverse Recovery Current see test circuit Figure 5 Note 1 Pulsed Pulse duration 300 us duty cycle 1 5 2 Pulse width limited by safe operating area 3 Coss eq is defined as a constant equivalent capacitance giving the same chargi
9. ng time as Coss when Vps increases from 0 to 80 Voss II 3 14 STP13NK60Z STP13NK60ZFP STB13NK60Z STB13NK60Z 1 STW13NK60Z Safe Operating Area For 220 02 2 HV07210 Ip A 4 vi N 10 P E N 10us 1004s a WA X ims 2 Su e Sp d 10 a rau 10ms E eg 4 HA Tj 150 C 107 To 25 C ingle D C OPERATION 130 2 10 2 4 68 2 4 68 2 468 2 4 68 V V 107 0 0 DS Safe Operating Area For TO 220FP HV07220 Ip A AN i WIN N 10 10 45 QoS 100us ws 2 A NN Y 1 10 EE ay 6 10ms SES 2 4 7 150 j 1 Tc 25 C ingle D C OPERATION 2 2 4 Im TAGE A 4 B m 4 68 m V Safe Oper
10. wever STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics Specifications mentioned in this publication are subject to change without notice This publication supersedes and replaces all information previously supplied STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics The ST logo is a registered trademark of STMicroelectronics 2003 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia Brazil Canada China Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom United States http www st com
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ST STP13NK60Z/FP STB13NK60Z STB13NK60Z 1 STW13NK60Z handbook