Home

ST STP9NK60ZD/STF9NK60ZD/STB9NK60ZD handbook

1. UNCLAMPED INDUCTIVE WAVEFORMS L V BR bsS Vp 0 9 2200 3 3 AF BF lp em o Ip em za V DUT Vpp z Vop H L L 4 4 I z Py LZ CORE gt SC05970 5C65980 Fig 3 Switching Times Test Circuit For Fig 4 Gate Charge test Circuit Resistive Load t UV hago Ri 2200 53 T 160 100nF H w o 34 mu mm Ig CONST V 20V Vewax 000 amp D UT Vs M 2200 L 1 DUT I 2 7K Q V6 LI oa Py 4 t gt l i C06000 5005990 ES Fig 5 Test Circuit For Inductive Load Switching And Diode Recovery Times gt A PA ub uu FAST DIODE L 100uH 6 2002 5 OB 33 1000 B B BF pF 250 D l mum 6 0 01 Rc 0 SC06010 7 12 STP9NK60ZD STF9NK60ZD STB9NK60ZD 8 12 TO 220 MECHANICAL DATA mm inch DIM MIN TYP MAX MIN TYP MAX A 4 40 4 60 0 173 0 181 b 0 61 0 88 0 024 0 034 b1 1 15 1 70 0 045 0 066 C 0 49 0 70 0 019 0 027 D 15 25 15 75 0 60 0 620 E 10 10 40 0 393 0 409 e 2 40 2 70 0 094 0 106 el 4 95 5 15 0 194 0 202 F 1 23 1 32 0 048 0 052 H1 6 20 6 60 0 244 0 256 J1 2 40 2 72 0 094 0 107 L 13 14 0
2. 2 2650 aerating Factor lsulaton Withstand vorage 0 v e Pulse width limited by safe operating area 1 Isp lt 7 di dt lt 500 5 Vpp lt V 88 0 Tj 25 C Limited only by maximum temperature allowed THERMAL DATA Rthj pcb Thermal Resistance Junction pcb Max When mounted on minimum Footprint Rthj case Thermal Resistance Junction case Max Rthj amb Thermal Resistance Junction ambient Max C W T Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Parameter Max Value 7 Avalanche Current Repetitive or Not Repetitive A pulse width limited by Tj max Single Pulse Avalanche Energy starting Tj 25 C Ip lar Vpp 50 V GATE SOURCE ZENER DIODE Symbol Parameter Test Conditions 8V 50 Gate Source Breakdown Igs 1mA Open Drain Voltage PROTECTION FEATURES OF GATE TO SOURCE ZENER DIODES The built in back to back Zener diodes have specifically been designed to enhance not only the device s ESD capability but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce In this respectthe Zener voltage is appropriate to achieve an efficient and cost effective intervention to protect the device s integrity These integrated Zener diodes thus avoid the usage of external components 2 12 STP9NK60ZD STF9NK60ZD STB9NK60ZD ELECTRICAL CHARACTERISTICS Tc
3. 511 0 551 L1 3 50 3 93 0 137 0 154 L20 16 40 0 645 L30 28 90 1 137 P 3 75 3 85 0 147 0 151 Q 2 65 2 95 0 104 0 116 A 0015988 4 STP9NK60ZD STF9NK60ZD STB9NK60ZD TO 220FP MECHANICAL DATA 9 12 STP9NK60ZD STF9NK60ZD STB9NK60ZD D2PAK MECHANICAL DATA 10 12 D2PAK FOOTPRINT All dimensions are in millimeters 4 mm Accass hole al shot locaton yi alot inm cons for tape start SB5mm min ath TAPE MECHANICAL DATA Ful radius 0412 80 157 159 0618 0825 0 15 T 0959 0262 145 15 0088 0445 0468 R s ua _ sales type STP9NK60ZD STF9NK60ZD STB9NK60ZD TUBE SHIPMENT no suffix BASE QTY 5 QTT 1000 Tube length 532 10 5 0 75 20 1 L 9 5 0 2 32 4 0 2 All dimensions are in millimeters 0527 NEST 24 svp T e BASE BULK QTY 1000 1000 10 piers boann on tapa G measured ai hub r r N LI II 1 ERES De gt Geer kna al cavity FEED DIRECTION Esing radius 11 12 STP9NK60ZD STF9NK60ZD STB9NK60ZD 12 12 Information furnished is believed to be accurate
4. L STBONK6OZDQ 7671 STP9NK60ZD STF9NK60ZD 7 STBONK60ZD N CHANNEL 600V 0 850 TO 220 TO 220FP D PAK SuperFREDMesh MOSFET ADVANCED DATA T Dues Poson o Pe STP9NK60ZD 600V lt 0 95 0 7A 125W STF9NK60ZD 600V lt 0 950 7A 30 VV STB9NK60ZD 600V lt 0 95 0 7A 125 W TYPICAL Rps on 0 85 VERY HIGH dv dt CAPABILITY 100 AVALANCHE TESTED GATE CHARGE MINIMIZED LOW INTRINSIC CAPACITANCES FAST INTERNAL RECOVERY DIODE DESCRIPTION The SuperFREDMesh series associates all ad vantages of reduced on resistance zener gate pro tection and very high dv dt capability with a Fast body drain recovery diode Such series comple INTERNAL SCHEMATIC DIAGRAM ments the FDmesh Advanced Technology 0 2 APPLICATIONS a HID BALLAST a ZVS PHASE SHIFT FULL BRIDGE CONVERTERS 5C015010 S 3 ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STP9NK60ZD P9NK60ZD TO 220 TUBE STF9NK60ZD F9NK60ZD TO 220FP TUBE STB9NK60ZDT4 B9NK60ZD TAPE amp REEL January 2004 1 12 STP9NK60ZD STF9NK60ZD STB9NK60ZD ABSOLUTE MAXIMUM RATINGS Symbol Parameter rozma Tomy _ BrainsourcevotageWes 00 v Voor 20 Vos 7577027721000 2 f d Drain Current continuos at Tc 25 G 7 b Drain Current continuos at Tc 100 C 4 4 A _
5. N 10 N i 10 10ps Ous H 6 1004s 4 NI 100us 2 EA N Tt d 2 EH XN f 10 LC 8 109 d DC ims 6 e E 4 l IBS M Lf 107 10 8 7 i Tj 150 c 189 D C OPERATIO 162502 D C OPERATIO 16 25 60 2 Single H 2 Single H 2 pu se 2 pu se 4 68 4 68 Vos V ip 44 BETE 4 68 4 68 V Thermal Impedance For 220 02 Thermal Impedance For TO 220FP GC20510 K 6 20921 6 0 5 6 0 5 0 2 0 1 0 2 107 0 1 0 05 107 0 02 905 0 01 Zin k Rinse 0 02 Z RinJ c SINGLE PULSE b 10 m JUL JUL SINGLE PULSE ils LL T 1072 1075 1075 0 107 10 Up 1074 107 1402 107 109 5 Output Characteristics Transfer Characteristics HV10400 Hv 10405 Vos 25V 16 12 8 4 0 2 4 6 8 Ves V 4 12 Transconductance HV10410 grs S Vos 10V 10 Ty 50 C 8 6 A ABT 0 2 3 4 5 Gate Charge vs Gate source Voltage Ves V HV10430 Vos 480V 0 10 20 30 40 5 Normalized Gate Threshold Voltage vs Temp Ves th norm 0 0 C HV10450 0 9 0 8 0 7 100 15 o TX 005 Static Drain source On Resistance HV STP9NK60ZD
6. STF9NK60ZD STB9NK60ZD 0420 Rps on Veg 10V 2 1 5 1 a 0 5 0 2 4 6 Capacitance Variations HV10440 C pF 500 0 10 20 30 40 Vos V Normalized On Resistance vs Temperature HV10470 Ves 10V 2 5 50 0 50 100 150 K C 5 12 STP9NK60ZD STF9NK60ZD STB9NK60ZD Source drain Diode Forward Characteristics HV10480 50 0 8 25 0 6 150 0 4 0 2 0 2 5 4 5 Maximum Avalanche Energy vs Temperature Eas mJ HV10620 250 200 50 25 75 100 125 TXT Normalized BVDSS vs Temperature norm 1 15 1 1 1 05 0 95 0 9 10 1 6 HV10460 50 100 150 TK 4 6 12 STP9NK60ZD STF9NK60ZD STB9NK60ZD Fig 1 Unclamped Inductive Load Test Circuit Fig 2 Unclamped Inductive Waveform
7. and reliable However STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics Specifications mentioned in this publication are subject to change without notice This publication supersedes and replaces all information previously supplied STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners 2004 STMicroelectronics All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia Belgium Brazil Canada China Czech Republic Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom United States http www st com
8. ase 25 UNLESS OTHERWISE SPECIFIED ON OFF Symbol metere Wm Mar unt V 88 05 Drain source Ip 1mA Vas 0 Breakdown Voltage Ipss Zero Gate Voltage Vps Max Rating Drain Current Vas 0 Vps Max Rating Tc 125 G lass Gate body Leakage Ves 20V 10 Current Vps 0 Gate Threshold Voltage Vps Ves Ip 10 100A 100A on Static Drain source On Ves 10V Ip 3 5 0 85 0 95 Resistance DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn on Delay Time Vpp 300 V 3 5 Rise Time Re 4 72 Vas 10V Resistive Load see Figure 3 Total Gate Charge Vpp 480V Ip 7A Gate Source Charge Ves 10V Gate Drain Charge Turn off Delay Time Vpp 300 V 3 5 Fall Time Ra 4 72 Ves 10 V Resistive Load see Figure 3 Off voltage Rise Time Vpp 480V Ip 7 A Fall Time Re 4 70 Vas 10V Cross over Time Inductive Load see Figure 5 K Parameter Source drain Current 2 Source drain Current pulsed trr Reverse Recovery Time Isp 7 A di dt 100A us Reverse Recovery Charge Vpp 30V Tj 25 C IRRM Reverse Recovery Current see test circuit Figure 5 Reverse Recovery Time Isp 7 A di dt 100A us Reverse Recovery Charge Vpp 30V Tj 150 C Reverse Recovery Current see test circuit Figure 5 Note 1 Pulsed Pulse duration 300 us duty cycle 1 5 2 Pulse wi
9. dth limited by safe operating area 3 Coss eq is defined as a constant equivalent capacitance giving the same charging time as Coss when Vps increases from 0 to 80 Voss STA 3 12 STP9NK60ZD STF9NK60ZD STB9NK60ZD Safe Operating Area For TO 220 D PAK Safe Operating Area For TO 220FP g p g HV10380 HV10390 Ip A Ip A 4 4 ul 2 a N

ST STP9NK60ZD/STF9NK60ZD/STB9NK60ZD handbook

Contents

Download Pdf Manuals

Related Search

Related Contents