ST STP3HNK90Z/STF3HNK90Z handbook
Contents
1. HV19020 4 2 i L H 10 4 N 10us 1004s EAS NN 107 C C a 1ms 4 ES N E ms 2 XU XO 8 Tj2150 C 4 e D C OPERATION Tecno 2 Single 2 pulse 10 gt ELTE 268 4 V V Safe Operating Area For TO 220FP HV19030 4 2 i 10 NON 10045 6 SUM SEN Ims 2 gt x 10ms 10 RE 5 150 4 D C OPERATION Ter 206 2 Single 25 pulse Mer 468 2 458 2 Output Characteristics HV 7010 4 10 Thermal Impedance For TO 220 GCZU0S5U2. K 6 0 5 0 2 0 1 107 0 05 0 0 Zi k Rinse tp T SINGLE PULSE tpl T 1072 10 107 107 10 101 Thermal Impedance For TO 220FP 6C20940 K 20 5 0 2 0 1 107 0 05 0 02 0 01 Zth E SINGLE PULSE 27 e 7 10 1073 1075 107 107 0 109 t s Transfer Characteristics HV18835 6 Vos 25V 4 2 0 2 4 6 8 Ves V Transconductance HV18940 915 5 Vos 15V Ty 50 C 2 5 2 25 C 1 5 Gate Charge vs Gate source Voltage Ves V 0 5 1 1 5 2 2 51 HV18960 Vps 720V Ip 5A 0 Normalized Gate Threshold Voltage vs Temp norm 0 9 0 8 0 7 5 10 15 20 25 09 6 HV18980 Vos Vas In 50 p 50 0 50 100 150 TK STP3HNK90Z STF3HNK90Z Static Drain source On Resistance Ros on 0 HV18950 3 4 805 5 2 0 2 3 Capacitance Variations HV18970 400
3. 0 10 20 350 40 Vos V Normalized On Resistance vs Temperature HV18990 norm Ves 10V Ir 1 5A 2 5 2 1 5 1 0 5 0 50 0 50 100 1501572 5 10 STP3HNK90Z STF3HNK90Z Source drain Diode Forward Characteristics Ven V9 0 9 0 8 0 7 0 6 0 5 0 4 0 Maximum Avalanche Energy vs Temperature 50 19000 150 C 0 5 5 2 2 5 18006 HV19010 150 100 6 10 25 Normalized BVDSS vs Temperature HV18430 B Viss V2 EM norm 1 15 1 1 1 05 1 0 95 0 9 50 50 100 150 120 STP3HNK90Z STF3HNK90Z Fig 2 Unclamped Inductive Waveform Fig 1 Unclamped Inductive Load Test Circuit UNCLAMPED INDUCTIVE WAVEFORMS L V BR bsS Vp C 2200 3 3 AF Ip V DUT Vpp H po e L I y Py 4 RIPE E 5605970 SCO5980 Fig 3 Switching Times Test Circuit For Fig 4 Gate Charge test Circuit Resistive Load 4 UV R 2020 33 i
4. n 100nF BOB LI Vb o Ig CONST b V 20V Vewax 000 amp D UT Re Y DP axo rj R G q 1 DUT 4 ako V _ t 5 1 5208000 505490 55 lt Fig 5 Test Circuit For Inductive Load Switching And Diode Recovery Times EJ e S 08 33 1000 B B 3 n uF Vs 250 D m cll 6 DUT 4 Rc 5 5606010 7 10 STP3HNK90Z STF3HNK90Z TO 220 MECHANICAL DATA mm inch MIN TYP MAX MIN TYP MAX 4 40 4 60 0 173 0 181 b 0 61 0 88 0 024 0 034 b1 1 15 1 70 0 045 0 066 0 49 0 70 0 019 0 027 15 25 15 75 0 60 0 620 10 10 40 0 393 0 409 2 40 2 70 0 094 0 106 1 4 95 5 15 0 194 0 202 F 1 23 1 32 0 048 0 052 H1 6 20 6 60 0 244 0 256 J1 2 40 2 72 0 094 0 107 L 13 14 0 511 0 551 L1 3 50 3 93 0 137 0 154 L20 16 40 0 645 L30 28 90 1 137 P 3 75 3 85 0 147 0 151 Q 2 65 2 95 0 104 0 116 A 0015988 M 8 10 4 TO 220FP MECHANICAL DATA STP3HNK90Z STF3HNK90Z mm inch MIN TYP MAX A 4 4 4 6 B 2 5 2 7 D 2 5 2 75 E 0 45 0 7 F 0 75 1 F1 1 15 1 7 F2 1 15 1 7 G 4 95 5 2 G1 2 4 2 7 L 10 10 4 L2 16
5. 0 630 L3 28 6 30 6 1 126 1 204 L4 9 8 10 6 0385 0 417 L5 2 9 3 6 0 114 0 141 L6 15 9 16 4 0 626 0 645 L7 9 9 3 0 354 0 366 e 3 3 2 0 118 0 126 9 10 STP3HNK90Z STF3HNK90Z 10 10 Information furnished is believed to be accurate and reliable However STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics Specifications mentioned in this publication are subject to change without notice This publication supersedes and replaces all information previously supplied STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics The ST logo is a registered trademark of STMicroelectronics 2003 STMicroelectronics Printed in Italy Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia Brazil Canada China Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom United States http www st com
6. Current Vps 0 Gate Threshold Voltage Vos Vas lp 50 pA 3 375 4 45 Rem Static Drain source On Vas 10V 1 5 3 5 E 2 Resistance DYNAMIC gfs 1 Forward Transconductance Vps 15 V ID 1 5 Input Capacitance Output Capacitance Reverse Transfer Turn on Delay Time Vpp 450 V 1 5 Rise Time Re 4 70 Vas 10V Turn off Delay Time Resistive Load see Figure 3 Fall Time Total Gate Charge 720 Ip Gate Source Charge Vas 10V Gate Drain Charge Source drain Current Source drain Current pulsed Reverse Recovery Time Isp 3 ny di dt 100A us Reverse Recovery Charge 50 V Tj 25 IRRM Reverse Recovery Current see test circuit Figure 5 trr Reverse Recovery Time Isp 3 A di dt 100A us Qr Reverse Recovery Charge 50 V Tj 150 C IRRM Reverse Recovery Current see test circuit Figure 5 Note 1 Pulsed Pulse duration 300 us duty cycle 1 5 2 Pulse width limited by safe operating area Coss eq is defined as a constant equivalent capacitance giving the same charging time as Coss when Vps increases from 0 to 80 Voss 3 10 STP3HNK90Z STF3HNK90Z Safe Operating Area For TO 220
7. L 0 STF3HNK90Z ISZ STP3HNK90Z STF3HNK90Z N CHANNEL 900V 3 5Q 3A TO 220 TO 220FP Zener Protected SuperMESH MPower MOSFET Voss Rosen 6 STF3HNK90Z 900 V lt 4 20 25 VV TYPICAL Rps on 3 5 Q EXTREMELY HIGH dv dt CAPABILITY 100 AVALANCHE TESTED CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING TO 220FP REPEATIBILITY DESCRIPTION The SuperMESH series is obtained through an extreme optimization of ST s well established strip based PowerMESH layout In addition to pushing on resistance significantly down special care is tak INTERNAL SCHEMATIC DIAGRAM en to ensure a very good dv dt capability for the most demanding applications Such series comple 002 ments ST full range of high voltage 5 cluding revolutionary MDmesh products APPLICATIONS HIGH CURRENT HIGH SPEED SWITCHING b IDEAL FOR OFF LINE POWER SUPPLIES ADAPTORS AND PFC LIGHTING SC15010 ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STP3HNK90Z P3HNK90Z TO 220 TUBE 902 F3HNK90Z TO 220FP TUBE August 2003 1 10 This is preliminary information on a new product now in development or undergoing evaluation Details are subject to change without notice STP3HNK90Z STF3HNK90Z ABSOLUTE MAXIMUM RATINGS Drain source Voltage Vas 0 Drain gate Voltage Ras 20 Tj Operating Junct
8. ion Temperature 55 to 150 Tstg Storage Temperature e Pulse width limited by safe operating area 1 Isp lt di dt x200A us Vpp lt 55 Tj lt Limited only by maximum temperature allowed THERMAL DATA Rthj case Thermal Resistance Junction case Max Parameter Max Value Avalanche Current Repetitive or Not Repetitive pulse width limited by max 3 Single Pulse Avalanche Energy 200 starting 25 Ip lan 50 V Parameter Test Conditions Gate Source Breakdown Igs 1mA Open Drain Voltage PROTECTION FEATURES OF GATE TO SOURCE ZENER DIODES The built in back to back Zener diodes have specifically been designed to enhance not only the device s ESD capability but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source In this respect the Zener voltage is appropriate to achieve an efficient and cost effective intervention to protect the device s integrity These integrated Zener diodes thus avoid the usage of external components 2 10 STP3HNK90Z STF3HNK90Z ELECTRICAL CHARACTERISTICS Tcase 25 UNLESS OTHERWISE SPECIFIED ON OFF L Sm 406 V BR DSS Drain source Ip 1 Ves 0 Breakdown Voltage Ipss Zero Gate Voltage Vps Max Rating Drain Current Vas 0 Vps Rating Tc 12596 lass Gate body Leakage Ves 30 V 10
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ST STP3HNK90Z/STF3HNK90Z handbook