general semiconductor 1N5059GP THRU 1N5062GP GLASS PASSIVATED JUNCTION RECTIFIER handbook
Contents
1. 453811 5060 vv fS 1N5059 THRU 1N5062 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage 200 to 800 Volts Forward Current 1 0 Ampere o FEATURES e DO 204AP e High temperature metallurgically bonded eo construction 1 1 0 Ampere operation at 75 10054 with no thermal runaway xb Typical IR less than 0 14A Hermetically sealed package EG Glass passivated cavity free junction Capable of meeting environmental standards of MAX MIL S 19500 E High temperature soldering guaranteed 350 C 10 seconds 0 375 9 5mm lead length 0 100 2 5 1 5 Ibs 2 3kg tension 1 0 25 4 Pd MECHANICAL DATA Case JEDEC 204 solid glass body Terminals Solder plated axial leads solderable per Dimensions in inches and millimeters MIL STD 750 Method 2026 Polarity Color band denotes cathode end Brazed lead assembly is covered by Patent No 3 930 306 Weight 0 02 ounce 0 56 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified Maximum repetitive peak reverse voltage 2300 40 60 80 Volts Maximum RMS voltage Veus 140 280 420 560 Vols Maximum DC blocking voltage voc 20 40 80 Volts Maximum average forward rectified current 10 Am 0 375 9 5mm lead length at TA 75 C AV i Peak forward surge current 8 3ms single half si2. ERSE VOLTAGE VOLTS PEAK PULSE REVERSE AVALANCHE FIG 2 MAXIMUM NON REPETITIVE PEAK FORWARD SURGE CURRENT TJ TJ max 8 3ms SINGLE HALF SINE WAVE JEDEC Method PEAK FORWARD SURGE CURRENT AMPERES 10 0 1 INSTANTANEOUS REVERSE CURRENT MICROAMPERES 1 000 100 POWER WATTS 10 100 NUMBER OF CYCLES AT 60 Hz FIG 4 TYPICAL REVERSE CHARACTERISTICS 125 75 25 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE FIG 6 MAXIMUM NON REPETITIVE PEAK PULSE REVERSE AVALANCHE POWER DISSIPATION ta PULSE DURATION MICROSECONDS GENERAL SEMICONDUCTOR
3. ne wave superimposed 5 50 0 Amps on rated load JEDEC Method Maximum instantaneous forward voltage at 1 0A Volt Maximum full Load reverse current full cycle average 0 375 9 5mm 25 IR AV lead length at 75 150 100 Maximum DC reverse current 25 5 0 at rated DC blocking voltage Ta 175 C 300 200 H Operating junction and storage temperature range TJ 65 to 175 C NOTES 1 Reverse recovery test conditions IF 0 5A IR 1 0A Irr 0 25A 2 Measured at 1 0 MHz and applied reverse voltage of 4 0 Volts 3 Thermal resistance from junction to ambient at 0 375 9 5mm lead length P C B mounted JEDEC registered values GENERAL 4 98 SEMICONDUCTOR RATINGS AND CHARACTERISTIC CURVES 1 5059 THRU 1N5062 FIG 1 FORWARD CURRENT DERATING CURVE 1 0 60Hz RESISTIVE INDUCTIVE LOAD 0 375 9 5mm LEAD LENGTH 0 8 0 6 0 4 0 2 AVERAGE FORWARD RECTIFIED CURRENT AMPERES 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE FIG 3 TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS PULSE WIDTH 300us 1 DUTY CYCLE INSTANTANEOUS FORWARD CURRENT AMPERES 0 4 0 6 0 8 1 0 1 2 1 4 INSTANTANEOUS FORWARD VOLTAGE VOLTS FIG 5 TYPICAL JUNCTION CAPACITANCE 30 T T TTTTT 25 f 21 0 MHz Vsig 50mVp p JUNCTION CAPACITANCE pF REV
Download Pdf Manuals
Related Search
general semiconductor 1N5059GP THRU 1N5062GP GLASS PASSIVATED JUNCTION RECTIFIER handbook