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FAIRCHILD MOCD213M Dual Channel Phototransistor Small Outline Surface Mount Optocouplers handbook

1. 10000 T 5 A 5 j 1000 ft P 23 o x lt amp 100 oc E m c 10 o W m Q o 1 I g L 29 0 1 0 20 40 60 80 100 T AMBIENT TEMPERATURE C 2005 Fairchild Semiconductor Corporation www fairchildsemi com MOCD213M Rev 1 0 1 4 19 dn090 doO JUNO e eying euipno j euis 403sisueJjojyoud jeuueu jend WELZGDOWN TEST CIRCUIT IN A INPUT Y oo Vcc 10V WAVEFORMS INPUT PULSE OUTPUT PULSE OUTPUT Adjust Ip to produce lc 2mA Figure 6 Switching Time Test Circuit and Waveform 2005 Fairchild Semiconductor Corporation MOCD213M Rev 1 0 1 www fairchildsemi com 19 dn090 doO JUNOW e ejung euipno JEWS 1o0jsisueJjo3oudg JaUURBYD jend WELZGDOWN Package Dimensions 8 pin SOIC Surface Mount 8 0 164 4 16 0 144 3 66 w 0 202 5 13 A 0 182 4 63 ES oa g z 0 143 3 63 E 0 010 0 25 IH 0 123 3 13 B 0 006 0 16 0 021 I 008 0 o h 0 244 6 19 J 0 011 028 0 003 0 08 0 224 5 69 0 050 1 27 Typ Lead Coplanarity 0 004 0 10 MAX Recommended Pad Layout al ES 0 61 i Des 0 060 1 52 0 275 6 99 T 0 155 3 94 Dt a ER Dimensions in inches mm Package drawings are provided as a service to customers considering Fairchild components Drawings m
2. 1 5 MIN 1 75 x 0 10 9 i 5 5 0 05 12 0 0 3 5 20 0 20 0 30 MAX 4 0 0 10 O O 0000000 0 HO 0 1 MAX 91 5 0 1 6 40 0 20 User Direction of Feed Dimensions in mm 2005 Fairchild Semiconductor Corporation www fairchildsemi com MOCD213M Rev 1 0 1 8 19 dn090 doO JUNOW e ejung euipno JEWS 1o0jsisueJjo3oug Jeuueu jend WELZGDOW Temperature C gt Reflow Profile Max Ramp up Rate 3 C S Tp Max Ramp down Rate 6 C S tp Tsmin Preheat Area 120 Time 25 C to Peak gt 240 Time seconds gt Profile Freature Pb Free Assembly Profile Temperature Min Tsmin 150 C Temperature Max Tsmax 200 C Time tg from Tsmin to Tsmax 60 120 seconds Ramp up Rate t to tp 3 C second max Liquidous Temperature T 217 C Time t_ Maintained Above T 60 150 seconds Peak Body Package Temperature 260 C 0 C 5 C Time tp within 5 C of 260 C 30 seconds Ramp down Rate Tp to T 6 C second max Time 25 C to Peak Temperature 8 minutes max 2005 Fairchild Semiconductor Corporation MOCD213M Rev 1 0 1 www fairchildsemi com 19 dn090 doO JUNOW e ejung euipno JEWS 4ojsisueJjo3oug JaUUBYD jend WELZGDOWN ena FAIRCHILD See SEMICONDU
3. alain esc FAIRCHILD i a rs i SEMICONDUCTOR April DO9 Dual Channel Phototransistor Small Outline Surface Mount Optocouplers Features Description B U L recognized File E90700 Volume 2 The MOCD213M device consists of two gallium arsenide m VDE recognized File 136616 add option V for infrared emitting diodes optically coupled to two mono VDE approval i e MOCD213VM lithic silicon phototransistor detectors in a surface mountable small outline plastic package It is ideally suited for high density applications and eliminates the need for through the board mounting B Dual channel coupler B Convenient plastic SOIC 8 surface mountable package style B Minimum current transfer ratio 100 with input current of 10mA m Minimum BVcgo of 70 Volts guaranteed m Standard SOIC 8 footprint with 0 050 lead spacing B Compatible with dual wave vapor phase and IR reflow soldering m High input output isolation of 2500 Vacirms guaranteed Applications B Feedback control circuits E Interfacing and coupling systems of different potentials and impedances B General purpose switching circuits B Monitor and detection circuits Schematic ANODE 1 8 COLLECTOR 1 CATHODE 1 7 EMITTER 1 ANODE 2 6 COLLECTOR 2 CATHODE 2 5 EMITTER 2 2005 Fairchild Semiconductor Corporation www fairchildsemi com MOCD213M Rev 1 0 1 sJo dno2ojdQ JUNOW e ejung euipno JEWS 4ojsisueJjo3oudg JaUURBYD
4. is equivalent to a rating of 3 000 Vacs for t 1 sec 4 Current Transfer Ratio CTR I lp x 100 2005 Fairchild Semiconductor Corporation MOCD213M Rev 1 0 1 www fairchildsemi com sJo dnooojdQ JUNOW e ejung euipno JEWS 4ojsisueJjo3oug Jeuueu Jeng WELZGDOWN Typical Performance Curves Fig 1 LED Forward Voltage vs Forward Current Fig 2 Output Curent vs Input Current 18 10 a Lu 17 N j 16 EC 9 d 15 E 1 tt 9 rs 2 14 i 5 Q o E Ta 55 C c O ia E T O Q ma o 42 Ty 25 C s Q gt of E 14 Ta 100 C 2 E gt 1 0 9 1 10 100 T Ip LED FORWARD CURRENT mA 0 01 0 1 1 10 100 Fig 3 Output Current vs Ambient Temperature lc LED INPUT CURRENT mA 10 Fig 4 Output Current vs Collector Emitter Voltage lg OUTPUT COLLECTOR CURRENT NORMALIZED lc OUTPUT COLLECTOR CURRENT NORMALIZED NORMALIZED TO TA 1 10mA NORMALIZED TO Vce 5V 0 1 0 1 2 3 4 5 6 7 8 9 10 T4 AMBIENT TEMPERATURE C Vcg COLLECTOR EMITTER VOLTAGE V Fig 5 Dark Current vs Ambient Temperature
5. jend WELZGDOWN Absolute Maximum Ratings T 25 C Unless otherwise specified Stresses exceeding the absolute maximum ratings may damage the device The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended In addition extended exposure to stresses above the recommended operating conditions may affect device reliability The absolute maximum ratings are stress ratings only Symbol Rating Value Unit EMITTER lE Forward Current Continuous 60 mA lp pk Forward Current Peak PW 100us 120 pps 1 0 A Vn Reverse Voltage 6 0 V Pp LED Power Dissipation T4 25 C 90 mW Derate above 25 C 0 8 mWw C DETECTOR VcEo Collector Emitter Voltage 70 V Veco Emitter Base Voltage 7 0 V lc Collector Current Continuous 150 mA Pp Detector Power Dissipation T4 25 C 150 mW Derate above 25 C 1 76 mWw C TOTAL DEVICE Viso Input Output Isolation Voltage f 60Hz t 1 min 2500 Vac rms Pp Total Device Power Dissipation T4 25 C 250 mW Derate above 25 C 2 94 mWw C TA Ambient Operating Temperature Range 40 to 100 IC Tstg Storage Temperature Range 40 to 150 C 2005 Fairchild Semiconductor Corporation MOCD213M Rev 1 0 1 www fairchildsemi com sJo dno2ojdQ JUNOW e ejung euipno JEWS 4o0jsisueJjo3oudg JaUURBYD jend WELZGDOW Electrical Characteristics T 25
6. C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Unit EMITTER Ve Input Forward Voltage lp 30mA 1 25 1 55 V IR Reverse Leakage Current VR 6 0V 0 001 100 pA C Capacitance 18 pF DETECTOR lcgo1 Collector Emitter Dark Current Vcg 10 V Ta 25 C 1 0 50 nA IcEo2 Vcg 10 V TA 100 C 1 0 HA BVcEQ Collector Emitter Breakdown lc 100pA 70 120 V Voltage BVggo Emitter Collector Breakdown lg 1000A 7 0 7 8 V Voltage CcE Collector Emitter Capacitance f 1 0MHz Vcg OV 7 0 pF COUPLED CTR Current Transfer Ratio lp 10mA Vcg 10V 100 VcE sat Collector Emitter Saturation lc 2 0mA Ip 10mA 0 15 0 4 V Voltage ton Turn On Time lc 2 0mA Vcc 10V Ry 1002 3 0 Us Fig 6 tort Turn Off Time lc 2 0mA Voc 10V Ry 1000 2 8 Hs Fig 6 ti Rise Time lc 2 0mA Vec 10V R 1000 1 6 Us Fig 6 tr Fall Time lc 2 0mA Voc 10V RL 1009 2 2 us Fig 6 Vigo Isolation Surge Voltage 2G f 60Hz t 1 min 2500 Vac rms Riso Isolation Resistance Vio 500V 10 Q Ciso _ Isolation Capacitance Vi o OV f 1MHz 0 2 pF Notes Typical values at T4 25 C 1 Input Output Isolation Voltage Viso is an internal device dielectric breakdown rating 2 For this test Pins 1 2 3 and 4 are common and Pins 5 6 7 and 8 are common 3 Viso rating of 2500 Vac rms for t 1 min
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8. ILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS NOR THE RIGHTS OF OTHERS THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS SPECIFICALLY THE WARRANTY THEREIN WHICH COVERS THESE PRODUCTS LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or systems which a are intended for surgical implant into the body or b support or sustain life and c whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in a significant injury of the user ANTI COUNTERFEITING POLICY safety or effectiveness 2 A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system or to affect its Fairchild Semiconductor Corporation s Anti Counterfeiting Policy Fairchild s Anti Counterfeiting Policy is also stated on our external website www fairchildsemi com under Sales Support Counterfeiting of semiconductor parts is a growing problem in the industry All manufacturers o
9. ay change in any manner without notice Please note the revision andlor date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision Package specifications do not expand the terms of Fairchild s worldwide terms and conditions specifically the warranty therein which covers Fairchild products Always visit Fairchild Semiconductor s online packaging area for the most recent package drawings http www fairchildsemi com packaging 2005 Fairchild Semiconductor Corporation www fairchildsemi com MOCD213M Rev 1 0 1 6 sJo dno2ojdQ JUNOW e ejung euipno JEWS 4o0jsisueJjo3oug JaBUURBYD Jeng WELZGDOWN Ordering Information Option Order Entry Identifier Description V V VDE 0884 R2 R2 Tape and reel 2500 units per reel R2V R2V VDE 0884 Tape and reel 2500 units per reel Marking Information Definitions Fairchild logo Device number VDE mark Note Only appears on parts ordered with VDE option See order entry table One digit year code e g 8 Two digit work week ranging from 01 to 53 Assembly package code 2005 Fairchild Semiconductor Corporation MOCD213M Rev 1 0 1 www fairchildsemi com 19 dn090 doO JUNOW e ejung euipno JEWS 40jsisueJjo3oudg JaBUURBYD jend WELZGDOW Carrier Tape Specifications 8 0 0 10 2 3 50 0 20 2 0 0 05
10. f semiconductor products are experiencing counterfeiting of their parts Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation substandard performance failed applications and increased cost of production and manufacturing delays Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts have full traceability meet Fairchild s quality standards for handling and storage and provide access to Fairchild s full range of up to date technical and product information Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Datasheet contains the design specifications f
11. or product development Specifications may change in Advance Information any manner without notice Formative In Design Datasheet contains preliminary data supplementary data will be published at a later date Fairchild First Production Semiconductor reserves the right to make changes at any time without notice to improve design Preliminary Datasheet contains final specifications Fairchild Semiconductor reserves the right to make changes pe Identification Needed Full Production at any time without notice to improve the design Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor Obsolete Notin Production The datasheet is for reference information only Rev 140 2005 Fairchild Semiconductor Corporation www fairchildsemi com MOCD213M Rev 1 0 1 10 s1 jdno 0 dO juno y e5ejangs euipno JEWS J0jsIsUEJ3j0jOUg joUUeYD enq NELZAJON

FAIRCHILD MOCD213M Dual Channel Phototransistor Small Outline Surface Mount Optocouplers handbook

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