FAIRCHILD H11F1M handbook
Contents
1. Figure 1 Resistance vs Input Current Figure 2 Output Characteristics 8907 IF 18mA 600 HIF 14mA Z 104 HAH IF 10mA lt H oh D I LL EITT I CL 5 D l _ 200 IF 6mA u LM F r 5 IF 2mA rri D 0 IF 2mA N R lt x IF 6mA z 4 L E 200 P 5 SR 3 Iz 10m 1 a E a a l a E L 400 rT st IF 14mA 5 _ L HH 600 Normalized to aoe L 190 IF 18mA IF 16mA 146 5uA RMS po 1 1 0 100 0 2 0 1 0 0 0 1 0 2 IF INPUT CURRENT mA V46 OUTPUT VOLTAGE V Figure 3 LED Forward Voltage vs Forward Current Figure 4 Off state Current vs Ambient Temperature 2 0 10000 es GN Lylli LL NORMALIZED TO V46 15V 1 8 it HEY fy IF 0MA 5 TA 25 C ii 1000 i g 1 6 3 L x S Ra 100 A P poe le M LA T Ta 40 C Q gp TIT N T TA 25 C 1 2 n x 2 10 1 0 j Ta 100 C i 0 8 1 0 1 1 10 100 0 20 40 60 80 100 IF LED FOR WARD CURRENT mA TA AMBIENT TEMPERATURE C Figure 5 Resistive Non Linearity vs D C Bias Ww O lt x H 2 W oc g wW O I 14 6 10uA RMS Q r on2. gt 6 4 6 10 6 60 a 25 0 25 0 36 7 62 A 0 38 Min 2 54 3 81 _ Na 0 20 0 30 0 86 gt a 2 54 Bsc z 0 86 ll Bsc 15 Typ 0 41 0 51 1 02 1 78 lk 0 76 1 14 Surface Mount 8 13 8 89 6 10 6 60 8 43 9 90 Pop T V 1 1 3 Pin 1 lt 0 25 0 36 3 28 3 53 5 08 Max 0 38 Min 0 86 gt I e 0 41 0 51 1 02 1 78 ee ke 0 76 1 14 Note All dimensions in mm 0 4 Lead Spacing 8 13 8 89 E A 6 10 6 60 0 25 0 36 0 38 Min 2 54 A ee 2 54 Bsc 0 86 Lea Sie 1 02 1 78 l be 0 76 1 14 1 78 El 1 52 REN 1 2 54 7 49 10 54 LI I R la 0 76 Rcommended Pad Layout 0 20 0 30 A owes J N p 8 13 0 20 0 30 a 10 16 10 80 2007 Fairchild Semiconductor Corporation H11F1M H11F2M H11F3M Rev 1 0 5 7 www fairchildsemi com s1 jdno 20 dO 134 0 04Ud WESLLH NZALLH NLALLH Ordering Information Order Entry Identifier Option Example Description No option H11FiM Standard Through Hole Device S H11F1SM Surface Mount Lead Bend SR2 H11F1SR2M Surface Mount Tape and Reel V H11F1VM IEC60747 5 2 approval TV H11F1TVM IEC60747 5 2 approval 0 4 Lead Spacing SV H11
3. ee FAIRCHILD a era SEMICONDUCTOR May 2012 H11F1M H11F2M H11F3M Photo FET Optocouplers Features General Description As a remote variable resistor The H11FXM series consists of a Gallium Aluminum H lt 1002 to gt 300MQ Arsenide IRED emitting diode coupled to a symmetrical H lt 15pF shunt capacitance bilateral silicon photo detector The detector is electri H gt 100GQ I O isolation resistance cally isolated from the input and performs like an ideal isolated FET designed for distortion free control of low As an analog switch level AC and DC analog signals The H11FXM series m Extremely low offset voltage devices are mounted in dual in line packages H 60 Vpk pk Signal capability E No charge injection or latch up H UL recognized File E90700 Applications As a remote variable resistor H Isolated variable attenuator H Automatic gain control H Active filter fine tuning band switching As an analog switch H Isolated sample and hold circuit H Multiplexed optically isolated A D conversion Schematic Package Outlines OUTPUT TERM OUTPUT TERM 2007 Fairchild Semiconductor Corporation www fairchildsemi com H11F1M H11F2M H11F3M Rev 1 0 5 19 dn090 dO 134 0 0Ud WESALLH NZALLH NLALLH Absolute Maximum Ratings T4 25 C unless otherwise specified Stresses exceeding the absolute maximum ratings may damage the device The device may not function or be op
4. 2002 E 2 1 50 100 150 200 250 300 350 V4 6 D C BIAS VOLTAGE mV 2007 Fairchild Semiconductor Corporation www fairchildsemi com H11F1M H11F2M H11F3M Rev 1 0 5 5 19 dn090 dO 134 0 04Ud WESLLH INZALLH NLALLH Typical Applications As a Variable Resistor ISOLATED VARIABLE ATTENUATORS 500K LOW FREQUENCY DYNAMIC RANGE 70db FOR 0 lt IF lt 30mA HIGH FREQUENCY DYNAMIC RANGE 50db FOR 0 IF lt 30mA 10KHz 1MHz Distortion free attenuation of low level A C signals is accom plished by varying the IRED current IF Note the wide dynamic range and absence of coupling capacitors D C level shifting or parasitic feedback to the controlling function AUTOMATIC GAIN CONTROL O O Vin Vout o H11F1M 500K lef AGC SIGNAL This simple circuit provides over 70db of stable gain control for an AGC signal range of from 0 to 30mA This basic circuit can be used to provide programmable fade and attack for electronic music ACTIVE FILTER FINE TUNING BAND SWITCHING Ip ADJUSTS f4 Ipo ADJUSTS fa The linearity of resistance and the low offset voltage of the H11FXM allows the remote tuning or band switching of active filters without switching glitches or distortion This schematic illustrates the concept with current to the H11F1M IRED s controlling the filter s transfer characteristic As an Analog Signal Switch ISOLATED SAMPLE AND HOLD CIRCU
5. F1SVM IEC60747 5 2 approval Surface Mount SR2V H11F1SR2VM IEC60747 5 2 approval Surface Mount Tape and Reel Marking Information Fairchild logo Device number VDE mark Note Only appears on parts ordered with VDE option See order entry table One digit year code e g 7 Two digit work week ranging from 01 to 53 Assembly package code 2007 Fairchild Semiconductor Corporation www fairchildsemi com H11F1M H11F2M H11F3M Rev 1 0 5 8 19 dn090 dO 134 0 04Ud WESALLH INZALLH NLALLH Carrier Tape Specification 4 5 0 20 0 30 0 05 12 0 0 1 2 0 0 05 4 0 0 1 o O O O 0 0 0 0 0 0 0 1 MAX User Direction of Feed 10 1 0 20 ICL I j 1 5 MIN 1 75 0 10 r O O o 11 5 1 0 24 0 0 3 9 1 0 20 1 5 0 1 0 2007 Fairchild Semiconductor Corporation H11F1M H11F2M H11F3M Rev 1 0 5 www fairchildsemi com 19 dn090 dO9 134 0 04Ud WESALLH NZALLH NLALLH Reflow Profile Temperature C gt Max Ramp up Rate 3 C S Tp Max Ramp down Rate 6 C S tp Tsmin Preheat Area 120 Time 25 C to Peak gt 240 Time seconds gt Profile Freature Pb Free Assembly Profile Temperature Min Tsmin 150 C Temperature Max Tsmax 200 C Ti
6. HE RIGHTS OF OTHERS THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS SPECIFICALLY THE WARRANTY THEREIN WHICH COVERS THESE PRODUCTS FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION 2 A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system or to affect its Fairchild Semiconductor Corporation s Anti Counterfeiting Policy Fairchild s Anti Counterfeiting Policy is also stated on our extemal website www fairchildsemi com under Sales Support Counterfeiting of semiconductor parts is a growing problem in the industry All manufacturers of semiconductor products are experiencing counterfeiting of their parts Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation substandard performance failed applications and increased cost of production and manufacturing delays Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above Products custom
7. IT Accuracy and range are improved over conventional FET switches because the H11FXM has no charge injection from the control signal The H11FXM also provides switching of either polarity input signal up to 30V magnitude MULTIPLEXED OPTICALLY ISOLATED A D CONVERSION CALL V1 H11F1M CALL Va DATA ACQUISITION A D CONVERTER PROCESS CONTROL LOGIC SYSTEM H11F1M The optical isolation linearity and low offset voltage of the H11FXM allows the remote multiplexing of low level analog signals from such transducers as thermocouplers Hall effect devices strain gauges etc to a single A D converter TEST EQUIPMENT KELVIN CONTACT POLARITY H11F1M H11F1M le p A Cc lest Ip TO DEVICE PARAMETER RI UNDER SENSING TEST BOARD C amp DFOR POLARITY 2 B D lp Ie H11F1M H11F1M In many test equipment designs the auto polarity function uses reed relay contacts to switch the Kelvin Contact polarity These reeds are normally one of the highest maintenance cost items due to sticking contacts and mechanical problems The totally solid State H11FXM eliminates these troubles while providing faster switching 2007 Fairchild Semiconductor Corporation H11F1M H11F2M H11F3M Rev 1 0 5 www fairchildsemi com s1 jdno 90 dO 134 0 04Ud WESALLH NZALLH NLALLH Package Dimensions Through Hole lt 8 13 8 89
8. airchild Semiconductor MotionMax p FACT Quiet Series Motion SPM SuperSOT 8 FACT SupreMOS mWSaver FAST S SyncFET FastvCore ET OLocic Sync Lock FETBench SYSTEM i RE OPTOPLANAR GENERAL FlashWriter FPS Trademarks of System General Corporation used under license by Fairchild Semiconductor 1 Life support devices or systems are intended for surgical implant into the body or b support or sustain life and c whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in a ANTI COUNTERFEITING POLICY are devices or systems which a safety or effectiveness significant injury of the user The following includes registered and unregistered trademarks and service marks owned by Fairchild Semiconductor and or its global subsidiaries and is not The Power Franchise nchisa TinyBoost TinyBuck TinyCalc TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TriFault Detect TRUECURRENT ywSerDes Ultra FRFET VisualMax VoltagePlus FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY FUNCTION OR DESIGN FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS NOR T
9. airchildsemi com H11F1M H11F2M H11F3M Rev 1 0 5 3 Safety and Insulation Ratings As per IEC 60747 5 2 this optocoupler is suitable for safe electrical insulation only within the safety limit data Compliance with the safety ratings shall be ensured by means of protective circuits Symbol Parameter Min Typ Max Unit Installation Classifications per DIN VDE 0110 1 89 Table 1 For Rated Main Voltage lt 150Vrms I IV For Rated Main voltage lt 300Vrms I IV Climatic Classification 55 100 21 Pollution Degree DIN VDE 0110 1 89 2 CTI Comparative Tracking Index 175 Vpr Input to Output Test Voltage Method b Viorm x 1 875 1594 Vpeak Vpr 100 Production Test with tm 1 sec Partial Discharge lt 5pC Input to Output Test Voltage Method a Vjorm x 1 5 1275 Vpeak Vpr Type and Sample Test with tm 60 sec Partial Discharge lt 5pC Viorm Max Working Insulation Voltage 850 Vpeak VioT Highest Allowable Over Voltage 6000 Vpeak External Creepage 7 mm External Clearance 7 mm Insulation Thickness 0 5 mm RIO Insulation Resistance at Ts Vig 500V 109 Q 2007 Fairchild Semiconductor Corporation H11F1M H11F2M H11F3M Rev 1 0 5 4 www fairchildsemi com sla dno20 dQO 134 0 04Ud NEALLH NZALLH NLALLH Typical Performance Curves
10. erable above the recommended operating conditions and stressing the parts to these levels is not recommended In addition extended exposure to stresses above the recommended operating conditions may affect device reliability The absolute maximum ratings are stress ratings only Symbol Parameter Device Value Units TOTAL DEVICE Tstg Storage Temperature All 40 to 150 C Topr Operating Temperature All 40 to 100 C Tsoi Lead Solder Temperature All 260 for 10 sec C EMITTER IF Continuous Forward Current All 60 mA VR Reverse Voltage All 5 V lE pk Forward Current Peak 10us pulse 1 duty cycle All 1 A Pp LED Power Dissipation 25 C Ambient All 100 mW Derate Linearly from 25 C 1 33 mW C DETECTOR Pp Detector Power Dissipation 25 C All 300 mW Derate linearly from 25 C 4 0 mW C BV4 6 Breakdown Voltage either polarity H11F1M 30 V H11F2M H11F3M 15 V l4 6 Continuous Detector Current either polarity All 100 mA 2007 Fairchild Semiconductor Corporation H11F1M H11F2M H11F3M Rev 1 0 5 2 www fairchildsemi com sla dno20 dQO 134 0 04Ud NEALLH NZALLH NLALLH Individual Component Characteristics Electrical Characteristics T 25 C unless otherwise specified Symbol Parameter Te
11. ers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts have full traceability meet Fairchild s quality standards for handling and storage and provide access to Fairchild s full range of up to date technical and product information Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary Formative In Design First Production in any manner without notice Datasheet contains the design specifications for product development Specifications may change Datasheet contains preliminary data supplementary data will be published at a later date Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design No Identification Needed Full Production changes at any time without notice to improve the design Datasheet contains final specifications Fairchild Semiconductor reserves the right to make Obsolete Not In Production The datas
12. heet is for reference information only Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor Rev 161 2007 Fairchild Semiconductor Corporation H11F1M H11F2M H11F3M Rev 1 0 5 11 www fairchildsemi com 191dn090 dO 134 0 04Ud WESALLH INZALLH NLALLH
13. me tg from Tsmin to Tsmax 60 120 seconds Ramp up Rate tj to tp 3 C second max Liquidous Temperature T 217 C Time ty Maintained Above T 60 150 seconds Peak Body Package Temperature 260 C 0 C 5 C Time tp within 5 C of 260 C 30 seconds Ramp down Rate Tp to Tj 6 C second max Time 25 C to Peak Temperature 8 minutes max 2007 Fairchild Semiconductor Corporation H11F1M H11F2M H11F3M Rev 1 0 5 10 www fairchildsemi com 191 dn090 dO 134 0 04Ud WESALLH NZALLH NLALLH E FAIRCHILD SEMICONDUCTOR TRADEMARKS intended to be an exhaustive list of all DISCLAIMER LIFE SUPPORT POLICY As used herein such trademarks 2Cool F PFS PowerTrench AccuPower FRFET PowerxS AX CAP Global Power Resource Programmable Active Droop Bitsic GreenBridge QFET Build it Now Green FPS QS CorePLUS Green FPS e Series Quiet Series CorePOWER Gmax RapidConfigure CROSSVOLT GTO Oj CTL IntelliMAX i r Current Transfer Logic ISOPLANAR o TOVA ata time DEUXPEED Making Small Speakers Sound Louder SmartMax Dual Cool and Better 3 EcoSPARK MegaBuck SMART START M EfficientMax MICROCOUPLER Solutions for Your Success ESBC MicroFET 2 MicroPak es MicroPak2 Fairchild MillerDrive SuperSOT 3 irchi i SuperSOT 6 F
14. st Conditions Device Min Typ Max Unit EMITTER Ve Input Forward Voltage lp 16mA All 1 3 1 75 V IR Reverse Leakage Current Vp 5V All 10 pA Cj Capacitance V 0V f 1 0MHz All 50 pF OUTPUT DETECTOR BV4 6 Breakdown Voltage l4 10pA Ir 0 H11F1M H11F2M 30 V Either Polarity H11F3M 15 l4 6 Off State Dark Current V4 6 15 V IF 0 All 50 nA V4 6 15V IF 0 All 50 pA Ta 100 C R4 Off State Resistance V4 6 15V Ip 0 All 300 MQ C46 Capacitance V4 6 15 V Ip 0 All 15 pF f 1MHz Transfer Characteristics Symbol Characteristics Test Conditions Device Min Typ Max Units DC CHARACTERISTICS R4 6 On State Resistance IF 16mA H11F1M 200 Q la 100HA H11F2M 330 H11F3M 470 Re 4 On State Resistance IF 16mA H11F1M 200 Q lea 100 H11F2M 330 H11F3M 470 Resistance non linearity IF 16mA All 2 and assymetry 14 6 25uA RMS f 1kHz AC CHARACTERISTICS tan Turn On Time RL 502 IF 16mA All 45 us V4 6 5V toft Turn Off Time RL 502 IF 16mA All 45 us V4 6 5V Isolation Characteristics Symbol Characteristic Test Conditions Device Min Typ Max Units Viso Isolation Voltage f 60Hz t 1 sec All 7500 VacPEAK Riso Isolation Resistance Vi o 500 VDC All 107 Q Ciso Isolation Capacitance f 1MHz All 0 2 pF s1 jdno20 dO 134 0 04Ud WESALLH NZALLH NLALLH All Typical values at T4 25 C 2007 Fairchild Semiconductor Corporation www f
Download Pdf Manuals
Related Search