TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K17FU Manual
Contents
1. 578 SSM 3K17FU LT RS SSM3K17FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Unit mm Analog Switch Applications e Suitable for high density mounting due to compact package e High drain source voltage e High speed switching Maximum Ratings Ta 25 C Characteristics Symbol Rating Unit Drain current GATE SOURCE DRAIN Drain power dissipation Ta 25 C Channel temperature JEDEC JEITA SC 70 Note Mounted on FR4 board 25 4 mm x 25 4 mm x 1 6 t Cu Pad 0 6 mm x 3 TOSHIBA 2 2E1E Weight 6 mg typ 0 6 mm lt 1 0 mm Marking Equivalent Circuit 3 3 DM Sx 1 2 1 2 This transistor is a electrostatic sensitive device Please handle with caution 1 2002 04 09 TOSHIBA SSM3K17FU Electrical Characteristics Ta 25 C Characteristics Symbol Test Condition S H EHH PP a H THH v panniers parave e PP Mosravosnma HER ee a ee Ip 10 mA Veg 4 V Drain Source ON resistance Rps O Ip 10mA Vos 25V Ves Ip 10mA Vos 25V Input capacitance Vps 3 V Ves 0 f 1 MHz 7 Reverse transfer capacitance Vps 3 V Ves 0 f 1 MHz 3 Output capacitance Vps 3 V Ves 0 f 1 MHz 7 20 40 ass ten fyon av Ip 20mA Vos 0 3 v Switching Time Test2. the entire system and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life bodily injury or damage to property In developing your designs please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications Also please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices or TOSHIBA Semiconductor Reliability Handbook etc The TOSHIBA products listed in this document are intended for usage in general electronics applications computer personal equipment office equipment measuring equipment industrial robotics domestic appliances etc These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and or reliability or a malfunction or failure of which may cause loss of human life or bodily injury Unintended Usage Unintended Usage include atomic energy control instruments airplane or spaceship instruments transportation instruments traffic signal instruments combustion control instruments medical instruments all types of safety devices etc Unintended Usage of TOSHIBA products listed in this document shall be made at the customer s own risk The information contained herein is presented only as a guide for the applications of our products No responsibility is assumed by TOSHIB
3. A CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others e The information contained herein is subject to change without notice 5 2002 04 09
4. Circuit Switching time 40 a Test circuit b Vin 3V IN 10 0 KS Gq kl ive we TD Voo c VouT OUT Vpp 3V Duty lt 1 VIN tr tf lt 5 ns Zout 50 Q Common source Ta 25 C 2 2002 04 09 TOSHIBA Drain Source on resistance Drain Source on resistance mA ID Drain current RDS ON 9 RDS ON 9 Common source Drain Source voltage Vps V 100 Common source 50 30 10 Drain current ID mA Rps ON Ves Common source Ta 25 C 0 2 4 6 8 10 Gate Source voltage YGS V Drain Source on resistance Forward transfer admittance SSM3K17FU T E Oo j L 5 LS E g Q Gate Source voltage YGS V Rps ON Ta Common source ID 10 mA S Z Q n Q a Ambient temperature Ta C YR Ip 500 Common source 300 VDS 3 V Ta 25 C T E 100 2 50 30 10 1 3 5 10 30 50 100 Drain current ID mA 2002 04 09 TOSHIBA v Gate threshold voltage Vth ns Switching time t mW P
5. D Drain power dissipation Common source VDS 3V Ambient temperature Ta C t Ip 1000 Common source 500 VDD gt 3 VY 300 VGs 0 3 V ton RG 10Q Ta 25 C 100 tr 50 toff 30 f 10 5 3 1 3 5 10 30 50 100 300 500 1000 Drain current ID mA 250 Mounted on FR4 board 25 4 mm x 25 4 mm x 1 6 t Cu Pad 0 6 mm x 3 200 150 100 50 Ambient temperature Ta C pF Capacitance C mA IDR Drain reverse current SSM3K17FU C Vps 50 Common source 30 Ves 0V f 1 MHz Ta 25 C 10 5 Ciss 3 Coss Crss 1 1 3 5 10 30 50 100 Drain Source voltage Vps V Common source V6Gs 0V Ta 25 C Drain Source vo tage Vps V 2002 04 09 TOSHIBA SSM3K17FU RESTRICTIONS ON PRODUCT USE 000707EAA e TOSHIBA is continually working to improve the quality and reliability of its products Nevertheless semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress It is the responsibility of the buyer when utilizing TOSHIBA products to comply with the standards of safety in making a safe design for
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K17FU Manual