TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16FU Manual
Contents
1. Ta 250 Mounted on FR4 board 25 4 mm x 25 4 mm x 1 6 Cu Pad 0 6 mm x 3 mW 200 100 Pp 150 100 50 Drain power dissipation 0 40 80 120 Ambient temperature Ta C 160 mA IDR Drain reverse current ns Switching time t SSM3K16FU Common source Ves 0V Ta 25 C Drain Source voltage Vps V t Ip 5000 Common source 3000 Vpp 3V VGS 0 2 5 V off Ta 25 C 1000 500 f 300 100 ton 50 30 tr 10 0 1 1 10 100 Drain current Ip mA 2001 12 18 TOSHIBA SSM3K16FU RESTRICTIONS ON PRODUCT USE 000707EAA e TOSHIBA is continually working to improve the quality and reliability of its products Nevertheless semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress It is the responsibility of the buyer when utilizing TOSHIBA products to comply with the standards of safety in making a safe design for the entire system and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life bodily injury or damage to property In developing your designs please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products2. specifications Also please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices or TOSHIBA Semiconductor Reliability Handbook etc The TOSHIBA products listed in this document are intended for usage in general electronics applications computer personal equipment office equipment measuring equipment industrial robotics domestic appliances etc These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and or reliability or a malfunction or failure of which may cause loss of human life or bodily injury Unintended Usage Unintended Usage include atomic energy control instruments airplane or spaceship instruments transportation instruments traffic signal instruments combustion control instruments medical instruments all types of safety devices etc Unintended Usage of TOSHIBA products listed in this document shall be made at the customer s own risk The information contained herein is presented only as a guide for the applications of our products No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others e The information contained herein is subject to change withou
3. 20Vives 0 1 ok a f vn vescovo ee e af Fomara versre el vsom fef e e bomen efe Drain Source ON resistance RDS ON Ip 10mA Ves 25V 22 40 2 ID 1 MA Veg 1 5V 52 15 inpacapecince G Vog 8VVes otetwne 08 oF Reverse arse coaer ome vescovi vesca rime 8 oF eC A Turn on time Vpp 3 V Ip 10 mA Switching time Ves 0 2 5 V Turn off time Switching Time Test Circuit a Test circuit b Vin 2 5 V IN IL 0 mT VDD c VouT OUT 10 us Vpp 3V Duty lt 1 VIN tr tf lt 5 ns Zout 50 2 Common Source Ta 25 C Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID 100 pA for this product For normal switching operation VGS on requires higher voltage than Vth and VGS off requires lower voltage than Vth Relationship can be established as follows VGS off lt Vth lt VGS on Please take this into consideration for using the device VGS recommended voltage of 1 5 V or higher to turn on this product 2 2001 12 18 TOSHIBA Drain Source on resistance Drain Source on resistance mA ID Drain current RDS ON 9 RDS ON 9 Ip Vps 250 Common source 2 5 Ta 25 C FES 43 200 2 3 10 2 1 1 9 150 100 i 1 5 50 VGS 1 3V 0 0 0 5 1 1 5 2 Drain Source voltage Vps V Common source T
4. TOSHIBA SSM3K16FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16FU High Speed Switching Applications ie nit mm Analog Switching Applications Suitable for high density mounting due to compact package e Low on resistance Ron 3 0 Q max Vas 4 V Ron 4 0 Q max VGs 2 5 V Ron 15 Q max VGs 1 5 V Maximum Ratings Ta 25 C Characteristics Symbol Drain Source voltage Mos Gate Source voltage ee eee a 0 1 0 15 0 05 i Drain current Drain power dissipation Ta 25 C Channel temperature JEDEC JEITA SC 70 25 4 mm x 25 4 mm x 1 6 t Cu Pad 0 6 mm x 3 TOSHIBA 2 2E1E 0 6 mm gt lt 1 0 mm Marking Equivalent Circuit 3 3 eo DS KS py 1 2 1 2 Handling Precaution When handling individual devices which are not yet mounting on a circuit board be sure that the environment is protected against electrostatic electricity Operators should wear anti static clothing and containers and other objects that come into direct contact with devices should be made of anti static materials 1 2001 12 18 TOSHIBA SSM3K16FU Electrical Characteristics Ta 25 C Characteristics Symbol Test Condition aeee tess ves stovvos 0 O Dra Souce bearn vore vemoss ozor vsz a V Dranwofeuren wss os
5. a 25 C Drain current Ip mA Rps ON Ta 8 Common source 6 VGs 1 5 V ID 1 mA 4 2 5 V 10 mA 2 4V 10 mA 0 25 0 25 50 75 100 125 150 Ambient temperature Ta C Drain Source on resistance SSM3K16FU Ip Ves 1000 Common source Vps 3V _ 100 lt x E Ta 100 C Q 10 T o S 25 C _25 C 5 1 0 amp g Q 0 1 0 01 0 1 2 3 RDS ON 9 v Gate threshold voltage Vth Gate Source voltage Ves V Rps ON Ves Common source ID 10 mA 2 4 8 10 Gate Source voltage VGs V Common source ID 0 1 mA Ambient temperature Ta C 2001 12 18 TOSHIBA 500 300 Common source Vps 3V Ta 25 C 100 mS lYfsl Forward transfer admittance 1 10 100 Drain current ID mA 100 1000 pF Common source 1 Ves 0V Capacitance C f 1MHz Ta 25 C 0 1 0 3 0 5 1 3 5 10 30 50 Drain Source voltage Vps V Pp
6. t notice 5 2001 12 18
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16FU Manual